Abstract: A method for image processing is disclosed. A non-normalized cross correlation is used to produce a cross correlation matrix between a recorded image, which contains at least one captured object, and a reference image, which contains a reference object. A comparison between a plurality of regions of the correlation matrix is carried out for a respectively captured object. A decision as to whether the respectively captured object and the reference object correspond is made on the basis of a result of the comparison. The non-normalized cross correlation is carried out by means of the equation CC ri , rj = ? x = 0 NTx ? ? ? y = 0 NTy ? ? T x , y · Img ( x - ri ) , ( y - rj ) .

Abstract: A light-emitting semiconductor chip, a light-emitting component and a method for producing a light-emitting component are disclosed. In an embodiment a light-emitting semiconductor chip includes a substrate having a top surface, a bottom surface opposite the top surface and a first side surface extending transversely or perpendicularly to the bottom surface, a semiconductor body arranged on the top surface of the substrate, the semiconductor body comprising an active region configured to generate light and a contacting comprising a first current distribution structure and a second current distribution structure, which is formed to supply current to the active region, wherein the semiconductor chip is free of any connection point on a side of the semiconductor body facing away from the substrate and on the bottom surface of the substrate, and wherein the connection point is a connection point for electrically contacting the first and second current distribution structures.

Abstract: An infrared heat lamp (200) includes a heating element (214) wound about and supported by an inner tubular member (224) and an outer tubular member (202) enclosing the inner tubular member (224) and heating element (214). The outer tubular member (202) includes an open first end (204) having a flange member (212) defined along an outer periphery thereof and a dome-like second end (206). The infrared heat lamp (200) further includes a base member (230) having first and second discrete portions (232, 234) secured to one another by a fastener (238) and retaining the flange member (212) of the open first end (204) of the outer tubular member (202) therebetween.

Abstract: Light control films, and lighting devices including the same, are disclosed. The light control films include a single layer of light transmitting material having a first side and a second side. A plurality of first microstructures are formed in the first side. The first microstructures are configured to receive incident light from a light source and produce an off axis (e.g. batwing) light distribution in a field downstream of the second side of the light control film. In some embodiments, a plurality of second microstructures is formed on the second side of the light control films and are configured to reduce the glare produced by light emitted from the light source passing through the film.

Abstract: In various embodiments, an optoelectronic component is provided. The optoelectronic component includes an optically active layer structure on a surface of a planar substrate. The surface in a predefined region is free of optically active layer structure. The optoelectronic component further includes an encapsulation structure having an inorganic encapsulation layer. The inorganic encapsulation layer is formed on or above the optically active layer structure and the surface of the substrate in the predefined region. The inorganic encapsulation layer at least in the predefined region is formed in direct contact with the surface of the substrate. The surface of the substrate at least in the predefined region includes a structuring. The structuring is configured to increase the roughness of the surface. The substrate at least in the predefined region at the surface thereof includes or is formed from an inorganic material.

Abstract: A semiconductor chip (20) is described comprising a semiconductor layer sequence (10) based on a phosphide compound semiconductor material or arsenide compound semiconductor material wherein the semiconductor layer sequence (10) contains a p-type semiconductor region (4) and an n-type semiconductor region (2). The n-type semiconductor region (2) comprises a superlattice structure (20) for improving current spreading, wherein the superlattice structure (20) has a periodic array of semiconductor layers (21, 22, 23, 24). A period of the superlattice structure (20) has at least one undoped first semiconductor layer (21) and a doped second semiconductor layer (22), wherein an electronic band gap E2 of the doped second semiconductor layer (22) is larger than an electronic band gap E1 of the undoped first semiconductor layer (21).

Abstract: In an embodiment the optical component includes an optoelectronic semiconductor chip including a radiation emission face, a deflection element configured to deflect electromagnetic radiation emitted by the optoelectronic semiconductor chip in a main emission direction which forms an angle deviating from 90° with the radiation emission face, wherein the deflection element is configured as a prism structure and an optical lens having an optical axis, wherein the optical axis forms an angle deviating from 90° with the radiation emission face.

Abstract: A method for producing an optoelectronic component is disclosed. In an embodiment the method includes a metallization with first mask structures is deposited directionally, and then a first passivation material is deposited non-directionally onto the metallization. Further, cutouts are introduced into the semiconductor body, such that the cutouts extend right into an n-type semiconductor region, and a second passivation material is applied on side faces of the cutouts. Furthermore, an n-type contact material is applied, structured and passivated. Moreover, contact structures are arranged on the semiconductor body and electrically connected to the n-type contact material and the metallization, wherein the contact structures and the semiconductor body are covered with a potting.

Abstract: The present invention relates to an optoelectronic component comprising a semiconductor (1) and a polyorganosiloxane. The polyorganosiloxane is obtainable by crosslinking a composition comprising a first organosiloxane having at least one terminal vinyl group, a second organosiloxane having at least one silicon-hydrogen bond and an alkoxysilane having at least one epoxy group. Additionally specified is a method of producing an optoelectronic component.

Abstract: A radiation-emitting component is disclosed. Embodiments of the invention relate to a radiation-emitting component with an organic layer stack which is arranged on a substrate. An outcoupling structure is arranged on a substrate face facing the organic layer stack, an additional optical layer is arranged between the substrate and the outcoupling structure, and the additional optical structure has a refractive index which is lower than the refractive index of the substrate, or the additional optical layer forms a mirror which has a selective angle and which only allows light that can be coupled out of the substrate at a substrate boundary surface facing away from the organic layer sequence to pass, the light being generated in the organic layer stack during operation.

Abstract: According to the present disclosure, lighting sources, having operating parameter(s) which is controllable in lighting sequence(s) as a function of a time code data set coupled with the sequence, are controlled: by providing a repository of operating data files for the lighting sources coupled with lighting sources, with each data file including time code data set(s) for lighting sequence(s) for one of the lighting sources, by detecting ambient lighting level signal(s) at the ambient where the lighting sources are located, by retrieving in the data repository operating data file(s) coupled with a selected one of the lighting sources, and by operating the selected lighting source by controlling the operating parameter(s) as a function of the operating data included in the operating data file retrieved and as a function of the ambient lighting level signal.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes at least one metallic surface, a contacted optoelectronic semiconductor chip configured to emit radiation and a protective layer arranged on the at least one metallic surface, wherein the protective layer comprises a protective material of at least one N-heterocyclic carbene, and wherein a covalent bond is formed between the protective material and the at least one metallic surface.

Abstract: Techniques are disclosed for programming a luminaire with location information, referred to herein as commissioning. Location information may include relative location information (e.g., the position of the luminaire relative to a reference point) and/or absolute location information (e.g., global coordinates for the luminaire). A commissioned luminaire can be configured to emit its location information via light-based communication (LCom). In some cases, the luminaire can be commissioned manually, by hard coding the luminaire with its location either at the luminaire itself or using a device (e.g., a smartphone, tablet, or a dedicated luminaire commissioning device) to program the luminaire with location information. In some cases, the luminaire can be commissioned automatically. In some cases, the luminaire may be configured to provide visual, aural, or tactile feedback to indicate that the luminaire has not received location data or that the luminaire has been moved.

Abstract: An optical sensor that captures a heart rate and/or a blood oxygen content includes a light source including a light emitter that emits electromagnetic radiation with a first wavelength range including green light, a second wavelength range including red light and a third wavelength range including infrared radiation, and three light detectors, each including a filter for electromagnetic radiation, wherein a first filter is transmissive for light of the first wavelength range and non-transmissive for light of the second wavelength range and the infrared radiation of the third wavelength range, a second filter is transmissive for light of the second wavelength range and non-transmissive for light of the first wavelength range and the infrared radiation of the third wavelength range and a third filter is transmissive for the infrared radiation of the third wavelength range and non-transmissive for light of the first and the second wavelength range.

Abstract: A lighting device, which may be employed e.g. as a retrofit bulb for vehicle lamps, includes a light radiation source, e.g. a LED source, and a beam-narrowing optical system facing the light radiation source, for propagating a narrowed light radiation beam of the source along a longitudinal axis of the device. Arranged distally of the beam-narrowing optical system along the longitudinal axis, there is provided: a light reflector, a light-driving lens, a filament-like body including annular reflective surfaces extending around the longitudinal axis and exposed to light radiation from the light radiation source propagated through the light reflector and the light-driving lens, a distal mirror member having a reflective surface facing towards the filament-like body, to reflect light radiation towards annular reflective surfaces in the plurality of annular reflective surfaces. The light radiation reflected by the annular reflective surfaces of the filament-like body is spread radially from the longitudinal axis.

Abstract: An organic electronic component and a method for making an organic electronic component with a p-dopant are disclosed. In an embodiment, the component includes a matrix containing a zinc complex as a p-dopant, the zinc complex containing at least one ligand L of the following structure: formula (I) wherein R1 and R2 can be oxygen, sulphur, selenium, NH or NR4 independently selected from one another, wherein R3 may comprise alkyl, long-chain alkyl, cycloalkyl, halogen-alkyl, aryl, arylene, halogen-aryl, heteroaryl, heteroarylene, heterocyclic-alkylene, heterocycloalkyl, halogen-heteroaryl, alkenyl, halogen-alkenyl, alkynyl, halogen-alkynyl, ketoaryl, halogen-ketoaryl, ketoheteroaryl, ketoalkyl, halogen-ketoalkyl, ketoalkenyl, halogen-ketoalkenyl, halogen-alkyl-aryl or halogen-alkyl-heteroaryl, and wherein R4 is selected from the group consisting of alkyl and aryl which can be bonded to R3.

Abstract: A method for producing a multifunctional layer, a method for producing an electrophoresis substrate, and a method for producing a converter plate and an optoelectronic component are disclosed. In an embodiment the method includes providing an electrophoresis substrate comprising a carrier having a front side and a back side, wherein a first electrically conductive layer and a second electrically conductive layer are located on the front side, electrophoretically depositing a first material onto the first electrically conductive layer, electrophoretically depositing a second material onto the second electrically conductive layer and arranging a filler material between the first material and the second material, wherein the filler material forms a common boundary surface with the first material and the second material.

Abstract: A method for reducing conductor track spacings in a printed circuit board, wherein the printed circuit board has an input part, wherein the input part is fed by a supply voltage, and has an output part, comprising the following steps: inserting an intermediate conductor track which has an intermediate potential derived from the input part, maintaining a functional insulation gap between the intermediate conductor track and adjacent conductor tracks of the input part, maintaining a safety-relevant insulation gap between the intermediate conductor track and the adjacent conductor tracks of the output part. The intermediate potential has, with respect to adjacent conductor tracks of the output part, a voltage which corresponds at most to the supply voltage of the input part.

Abstract: A method of producing an optoelectronic component includes embedding an optoelectronic component part into a molded body such that an upper side of the optoelectronic component part is at least partially exposed on an upper side of the molded body; arranging and structuring a sacrificial layer above the upper side of the optoelectronic component part and the upper side of the molded body; arranging and structuring a layer of an optical material above the sacrificial layer; and removing the sacrificial layer.

Abstract: A system and method for determining vehicle position uses light based communication (LBC) signals and a received signal strength indicator (RSSI) to determine the vehicle position. Each vehicle includes a LBC system having an array of transmitting light emitting diodes (LEDs) and an array of receiver photodiodes for transmitting and receiving pulsed light binary messages. Each LBC system has a controller coupled to the transmitter diodes and receiver diodes. The controller includes a vehicle communication module that may be executed by a processor to determine the distance. The processor models a first distance between a first transmitting LBC system and a first receiving LBC system, then models a second distance between a second transmitting LBC system and the first receiving LBC system, and then determines the distance between the first vehicle and the second vehicle using trilateration of the first distance and the second distance.