Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I)

Abstract: An electroluminescent device includes: (1) a first region, a second region, and an intermediate region arranged between the first region and the second region; (2) a conductive coating disposed in the second region; and (3) a nucleation inhibiting coating disposed in the first region, the nucleation inhibiting coating extending to cover at least a portion of the intermediate region, wherein a thickness of the nucleation inhibiting coating in the intermediate region is less than a thickness of the nucleation inhibiting coating in the first region, and wherein a surface of the nucleation inhibiting coating in the first region is substantially free of the conductive coating.

Abstract: A compound, and a layered semiconductor device comprising a patterning coating provided in a first portion of a lateral aspect of the device, the patterning coating comprising the compound. The patterning coating is adapted to impact a propensity of a vapor flux of a deposited material to be condensed thereon. The compound comprises a plurality of silsesquioxane groups, including without limitation, first and second silsesquioxane groups and a linker group bonded to the first silsesquioxane group and the second silsesquioxane group, wherein at least one of the first and second silsesquioxane groups comprises a fluorine-containing moiety. The device comprises a deposited layer provided in a second portion of the lateral aspect of the device, the deposited layer comprising the deposited material.

Abstract: A formulation and a layered semiconductor device comprising a patterning coating and a deposited layer. The formulation and the patterning coating may comprise a plurality of materials. In the formulation, each material may be a patterning material. The patterning coating may be provided in a first portion and the deposited layer may be provided in a second portion of a lateral aspect of the device. The patterning coating may be adapted to impact a propensity of a vapor flux of a deposited material to be condensed thereon. The deposited layer may comprise the deposited material.

Abstract: A layered semiconductor device comprises a compound. The compound comprises a heterocyclic moiety and at least one fluorine (F)-containing moiety each bonded thereto. The heterocyclic moiety comprises nitrogen (N). The device may comprise first and second electrodes, and an active region comprising at least one semiconducting layer, where the active region is bounded, in a longitudinal aspect of the device by the electrodes and confined, in a lateral aspect of the device, to an emissive region defined by the electrodes. The active region may be substantially devoid of the compound. The device may comprise a patterning coating comprising the compound and disposed on a first layer surface of an underlying layer, in a first portion of the lateral aspect and a deposited layer comprising a deposited material and disposed on a second layer surface, where the first portion is substantially devoid of a closed coating of the deposited material.

Abstract: An opto-electronic device includes a nucleation-inhibiting coating (NIC) disposed on a surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability of the conductive coating is substantially less for the NIC than for the surface in the first portion, such that the first portion is substantially devoid of the conductive coating.

Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one EM radiation-absorbing layer deposited on a first layer surface and comprising a discontinuous layer of at least one particle structure comprising a deposited material. The at least one particle structure of the at least one EM radiation-absorbing layer facilitates absorption of EM radiation therein in at least a part of at least one of a visible spectrum and a UV spectrum while substantially allowing transmission of EM radiation therein in at least a part of at least one of an IR and an NIR spectrum.

Abstract: A method for encoding quantum information comprising at least one Kronecker product of Pauli X, Y, Z matrices, an identity matrix e and a phase term comprises providing binary indices for each term and using them in a binary representation of the Kronecker product, including first and second arrays corresponding to respective digits of a two-digit binary code. The encoding method provides computational and storage advantages. A set of ILC entanglers can be generated using the encoding method. Entanglers encoded in a binary representation can be conveniently prioritized and selected for a provided Hamiltonian, including in a multiple loop iterative fashion, to provide a set of quantum logic gates in a quantum circuit of a quantum computer.

Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I)

Abstract: An opto-electronic device having a plurality of layers, comprises first electrode(s), layered stacks, both extending in a lateral aspect, and a deposited material. A first electrode has an associated emissive region. Each stack comprises a second electrode between a semiconducting layer and a patterning coating, a first one on a first electrode surface, and a second one on a structure surface adjacent thereto, separated by a first gap, that has a lateral component parallel to, and/or a longitudinal component transverse to, the lateral aspect. The material is disposed thereon for electrically coupling corresponding layer(s) of the first and second stacks, including the second electrode.

Abstract: An opto-electronic device includes a nucleating inhibiting coating (NIC) disposed on a first layer surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a second layer surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability for forming the conductive coating onto a surface of the NIC in the first portion, is substantially less than the initial sticking probability for forming the conductive coating onto the surface in the second portion, such that the surface of the NIC in the first portion is substantially devoid of the conductive coating.

Abstract: An electroluminescent device includes: (1) a first region, a second region, and an intermediate region arranged between the first region and the second region; (2) a conductive coating disposed in the second region; and (3) a nucleation inhibiting coating disposed in the first region, the nucleation inhibiting coating extending to cover at least a portion of the intermediate region, wherein a thickness of the nucleation inhibiting coating in the intermediate region is less than a thickness of the nucleation inhibiting coating in the first region, and wherein a surface of the nucleation inhibiting coating in the first region is substantially free of the conductive coating.

Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in a first portion and a second portion of at least one lateral aspect defined by a lateral axis thereof, comprises an orientation layer comprising an orientation material, disposed on a first exposed layer surface of the device in at least the first portion; at least one patterning layer comprising a patterning material, disposed on a first exposed layer surface of the orientation layer; and at least one deposited layer comprising a deposited material, disposed on a second exposed layer surface of the device in the second portion; wherein the first portion is substantially devoid of a closed coating of the deposited material.

Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

Abstract: An opto-electronic device includes: (1) a substrate including a first region and a second region; and (2) a conductive coating covering the second region of the substrate. The first region of the substrate is exposed from the conductive coating, and an edge the conductive coating adjacent to the first region of the substrate has a contact angle that is greater than about 20 degrees.

Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one EM radiation-absorbing layer deposited on a first layer surface and comprising a discontinuous layer of at least one particle structure comprising a deposited material. The at least one particle structure of the at least one EM radiation-absorbing layer facilitates absorption of EM radiation therein in at least a part of at least one of a visible spectrum and a UV spectrum while substantially allowing transmission of EM radiation therein in at least a part of at least one of an IR and an NIR spectrum.

Abstract: An opto-electronic device comprises light transmissive regions extending through it along a first axis to allow passage of light therethrough. The transmissive regions may be arranged along a plurality of transverse configuration axes. Emissive regions may lie between adjacent transmissive regions along a plurality of configuration axes to emit light from the device. Each transmissive region has a lateral closed boundary having a shape to alter at least one characteristic of a diffraction pattern exhibited when light is transmitted through the device to mitigate interference by such pattern. An opaque coating may comprise at least one aperture defining a corresponding transmissive region to preclude transmission of light therethrough other than through the transmissive region(s). The device can form a face of a user device having a body and housing a transceiver positioned to receive light along at least one light transmissive region.

Abstract: An opto-electronic device includes a nucleation-inhibiting coating (NIC) disposed on a surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability of the conductive coating is substantially less for the NIC than for the surface in the first portion, such that the first portion is substantially devoid of the conductive coating.

Abstract: An opto-electronic device includes: (1) a subpixel region including: an electrode; an organic layer disposed over the electrode; and a conductive coating disposed over the organic layer; and (2) a light transmissive region including a nucleation inhibiting coating, wherein a surface of the nucleation inhibiting coating in the light transmissive region is substantially free of the conductive coating.

Abstract: An opto-electronic device includes: (1) a substrate including a first region and a second region; and (2) a conductive coating covering the second region of the substrate. The first region of the substrate is exposed from the conductive coating, and an edge the conductive coating adjacent to the first region of the substrate has a contact angle that is greater than about 20 degrees.