Patents Assigned to OTI Lumionics Inc.
  • Publication number: 20240065082
    Abstract: A semiconductor device that facilitates absorption of EM radiation thereon and a method manufacturing same. The device extends in at least one lateral aspect. An EM radiation-absorbing layer comprising a discontinuous layer of at least one particle structure comprising a deposited material is deposited on a first layer surface. The particle structures facilitate absorption of EM radiation incident thereon and may comprise a seed about which the deposited material may tend to coalesce, and/or comprise the deposited material co-deposited with a co-deposited dielectric material. The EM radiation-absorbing layer may be disposed on a supporting dielectric layer and/or be covered by a covering dielectric layer. A patterning coating having an initial sticking probability against deposition of the deposited and/or a seed material, on a surface of the patterning coating is less than the initial sticking probability against deposition of the deposited and/or seed material on the second layer surface.
    Type: Application
    Filed: September 15, 2023
    Publication date: February 22, 2024
    Applicant: OTI Lumionics, Inc.
    Inventors: Zhibin WANG, Qi WANG, Yi-Lu CHANG, Michael HELANDER
  • Publication number: 20240054374
    Abstract: A method of solving a problem can include providing a fermionic Hamiltonian, transformation of the fermionic Hamiltonian to qubit operators, transformation of the fermionic Hamiltonian in qubit operators to a mean-field Hamiltonian, and embedding the Hamiltonian onto a quantum computer. Such systems and methods may improve upon existing methods for solving electronic structure problems on a computer by adapting the problem to available hardware, reducing computational cost, and reducing the number of required qubits to solve electronic structure problems for larger number of atoms.
    Type: Application
    Filed: October 13, 2023
    Publication date: February 15, 2024
    Applicant: OTI Lumionics Inc.
    Inventors: Scott N. GENIN, Artur IZMAYLOV, IIya RYABINKIN
  • Publication number: 20240008353
    Abstract: A layered semiconductor device comprising a compound, the compound comprising a silicon-oxygen backbone and at least one fluorine-containing moiety attached to the silicon-oxygen backbone. The compound may comprise a unit represented by: formula (I) wherein R and R? each independently represents at least one of: substituted or unsubstituted alkyl, substituted or unsubstituted fluoroalkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted fluoroalkoxy, substituted or unsubstituted siloxy, or substituted or unsubstituted fluoroalkylsiloxy, substituted or unsubstituted cycloalkyl, substituted or unsubstituted fluorocycloalkyl, substituted or unsubstituted aryl, substituted or unsubstituted fluoroaryl, or substituted or unsubstituted heteroaryl; and wherein at least one of R and R? is the fluorine-containing moiety.
    Type: Application
    Filed: May 2, 2023
    Publication date: January 4, 2024
    Applicant: OTI LUMIONICS INC.
    Inventors: Michael HELANDER, Scott Nicholas GENIN
  • Publication number: 20230413649
    Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one low(er)-index coating disposed on a first layer surface and at least one EM radiation-modifying layer embedded within the at least one low(er)-index coating and comprising at least one particle structure comprising a deposited material. Embedding the at least one particle structure of the at least one EM radiation-modifying layer within the at least one low(er)-index coating modifies the absorption spectrum of the at least one EM radiation-modifying layer for EM radiation passing at least partially therethrough at a non-zero angle relative to the lateral aspect therein in at least a part of the EM spectrum.
    Type: Application
    Filed: October 11, 2021
    Publication date: December 21, 2023
    Applicant: OTI LUMIONICS INC.
    Inventors: Michael HELANDER, Zhibin WANG, Yi-Lu CHANG, Qi WANG, Yingjie Zhang
  • Publication number: 20230413603
    Abstract: A layered semiconductor device comprises at least one particle structure disposed on an underlying layer that comprises a particle material in contact with a contact material selected from: a seed material, a co-deposited dielectric material and/or at least one patterning material. A method for controllably selecting formation of the at least one particle structure on an underlying layer during manufacture of the device comprises depositing at least one layer, including the underlying layer, and exposing its surface to a flux of a particle material such that it comes into contact with the contact material, and coalesces to dispose the at least one particle structure on the underlying layer.
    Type: Application
    Filed: September 29, 2021
    Publication date: December 21, 2023
    Applicant: OTI LUMIONICS INC.
    Inventors: Michael HELANDER, Zhibin WANG, Yi-Lu CHANG, Qi WANG
  • Patent number: 11829843
    Abstract: A method of solving a problem can include providing a fermionic Hamiltonian, transformation of the fermionic Hamiltonian to qubit operators, transformation of the fermionic Hamiltonian in qubit operators to a mean-field Hamiltonian, and embedding the Hamiltonian onto a quantum computer. Such systems and methods may improve upon existing methods for solving electronic structure problems on a computer by adapting the problem to available hardware, reducing computational cost, and reducing the number of required qubits to solve electronic structure problems for larger number of atoms.
    Type: Grant
    Filed: April 6, 2022
    Date of Patent: November 28, 2023
    Assignee: OTI Lumionics Inc.
    Inventors: Scott N. Genin, Artur Izmaylov, Ilya Ryabinkin
  • Patent number: 11832473
    Abstract: An opto-electronic device comprises light transmissive regions extending through it along a first axis to allow passage of light therethrough. The transmissive regions may be arranged along a plurality of transverse configuration axes. Emissive regions may lie between adjacent transmissive regions along a plurality of configuration axes to emit light from the device. Each transmissive region has a lateral closed boundary having a shape to alter at least one characteristic of a diffraction pattern exhibited when light is transmitted through the device to mitigate interference by such pattern. An opaque coating may comprise at least one aperture defining a corresponding transmissive region to preclude transmission of light therethrough other than through the transmissive region(s). The device can form a face of a user device having a body and housing a transceiver positioned to receive light along at least one light transmissive region.
    Type: Grant
    Filed: November 14, 2022
    Date of Patent: November 28, 2023
    Assignee: OTI Lumionics Inc.
    Inventors: Michael Helander, Zhibin Wang
  • Publication number: 20230371348
    Abstract: A semiconductor device that facilitates absorption of EM radiation thereon and a method manufacturing same. The device extends in at least one lateral aspect. An EM radiation-absorbing layer comprising a discontinuous layer of at least one particle structure comprising a deposited material is deposited on a first layer surface. The particle structures facilitate absorption of EM radiation incident thereon and may comprise a seed about which the deposited material may tend to coalesce, and/or comprise the deposited material co-deposited with a co-deposited dielectric material. The EM radiation-absorbing layer may be disposed on a supporting dielectric layer and/or be covered by a covering dielectric layer. A patterning coating having an initial sticking probability against deposition of the deposited and/or a seed material, on a surface of the patterning coating is less than the initial sticking probability against deposition of the deposited and/or seed material on the second layer surface.
    Type: Application
    Filed: September 13, 2021
    Publication date: November 16, 2023
    Applicant: OTI Lumionics Inc.
    Inventors: Zhibin WANG, Qi Wang, Yi-Lu CHANG, Michael HELANDER
  • Publication number: 20230363196
    Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I)
    Type: Application
    Filed: July 6, 2023
    Publication date: November 9, 2023
    Applicant: OTI LUMIONICS INC.
    Inventors: Yi-Lu CHANG, Qi WANG, Scott Nicholas GENIN, Michael HELANDER, Jacky QIU, Zhibin WANG, Benoit LESSARD
  • Publication number: 20230354688
    Abstract: A device includes: (1) a substrate; (2) a patterning coating covering at least a portion of the substrate, the patterning coating including a first region and a second region; and (3) a conductive coating covering the second region of the patterning coating, wherein the first region has a first initial sticking probability for a material of the conductive coating, the second region has a second initial sticking probability for the material of the conductive coating, and the second initial sticking probability is different from the first initial sticking probability.
    Type: Application
    Filed: July 6, 2023
    Publication date: November 2, 2023
    Applicant: OTI LUMIONICS INC.
    Inventors: Michael HELANDER, Zhibin WANG, Jacky QUI
  • Publication number: 20230354677
    Abstract: A device having a plurality of layers comprises a nucleation-inhibiting coating (NIC) disposed on a first layer surface in a first portion of a lateral aspect thereof; and a deposited layer comprised of a deposited material, disposed on a second layer surface, wherein an initial sticking probability against deposition of the deposited layer onto a surface of the NIC in the first portion is substantially less than the initial sticking probability against deposition of the deposited layer onto the second layer surface, such that the NIC is substantially devoid of a closed coating of the deposited material and wherein the NIC comprises a compound containing a rare earth element. The deposited layer can comprise a closed coating on the second layer surface in a second portion of the lateral aspect, and/or a discontinuous layer of at least one particle structure on a surface of the NIC.
    Type: Application
    Filed: May 17, 2021
    Publication date: November 2, 2023
    Applicant: OTI LUMIONICS, INC.
    Inventors: Yi-Lu CHANG, Qi WANG, Zhibin WANG, Michael HELANDER
  • Publication number: 20230345757
    Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in a first portion and a second portion of at least one lateral aspect defined by a lateral axis thereof, comprises an orientation layer comprising an orientation material, disposed on a first exposed layer surface of the device in at least the first portion; at least one patterning layer comprising a patterning material, disposed on a first exposed layer surface of the orientation layer; and at least one deposited layer comprising a deposited material, disposed on a second exposed layer surface of the device in the second portion; wherein the first portion is substantially devoid of a closed coating of the deposited material.
    Type: Application
    Filed: December 7, 2021
    Publication date: October 26, 2023
    Applicant: OTI Lumionics, Inc.
    Inventors: Michael HELANDER, Zhibin WANG
  • Patent number: 11785831
    Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.
    Type: Grant
    Filed: April 13, 2022
    Date of Patent: October 10, 2023
    Assignee: OTI Lumionics Inc.
    Inventors: Yi-Lu Chang, Qi Wang, Michael Helander, Jacky Qiu, Zhibin Wang, Thomas Lever
  • Publication number: 20230301160
    Abstract: A semiconductor device having a plurality of layers that extend in an interface portion and a non-interface portion of at least one lateral aspect defined by a lateral axis of the device. A low(er)-index layer, that may comprise a low-index material, that has a first refractive index at a wavelength, is disposed on a first layer surface in at least the interface portion. A higher-index layer, that may comprise a high-index material, that has a second refractive index at a wavelength, is disposed on an exposed layer surface of the device, to define an index interface with the low(er)-index layer in the interface portion. The second refractive index exceeds the first refractive index. A quantity of deposited material may be disposed on a second layer surface in the non-interface portion. The higher-index layer may cover the deposited material in the non-interface portion.
    Type: Application
    Filed: July 24, 2021
    Publication date: September 21, 2023
    Applicant: OTI Lumionics Inc.
    Inventors: Qi WANG, Yi-Lu CHANG, Yingjie ZHANG, Zhibin WANG, Michael HELANDER
  • Patent number: 11764320
    Abstract: A method for depositing a conductive coating on a surface is provided, the method including treating the surface by depositing fullerene on the surface to produce a treated surface and depositing the conductive coating on the treated surface. The conductive coating generally includes magnesium. A product and an organic optoelectronic device produced according to the method are also provided.
    Type: Grant
    Filed: November 3, 2022
    Date of Patent: September 19, 2023
    Assignee: OTI Lumionics Inc.
    Inventors: Michael Helander, Jacky Qiu, Zhibin Wang, Zheng-hong Lu
  • Patent number: 11751415
    Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I).
    Type: Grant
    Filed: January 2, 2019
    Date of Patent: September 5, 2023
    Assignee: OTI Lumionics Inc.
    Inventors: Yi-Lu Chang, Qi Wang, Scott Nicholas Genin, Michael Helander, Jacky Qiu, Zhibin Wang, Benoit Lessard
  • Patent number: 11744101
    Abstract: An opto-electronic device having a plurality of layers, comprising a nucleation-inhibiting coating (NIC) disposed on a first layer surface in a first portion of a lateral aspect thereof. In the first portion, the device comprises a first electrode, a second electrode and a semiconducting layer between them. The second electrode lies between the NIC and the semiconducting layer in the first portion. In the second portion, a conductive coating is disposed on a second layer surface. The first portion is substantially devoid of the conductive coating. The conductive coating is electrically coupled to the second electrode and to a third electrode in a sheltered region of a partition in the device.
    Type: Grant
    Filed: September 20, 2022
    Date of Patent: August 29, 2023
    Assignee: OTI Lumionics Inc.
    Inventors: Zhibin Wang, Yi-Lu Chang, Qi Wang
  • Patent number: 11737298
    Abstract: An opto-electronic device having a plurality of layers, comprising a first capping layer (CPL) comprising a first CPL material and disposed in a first emissive region configured to emit photons having a first wavelength spectrum that is characterized by a first onset wavelength; and a second CPL comprising a second CPL material and disposed in a second emissive region configured to emit photons having a second wavelength spectrum that is characterized by a second onset wavelength; wherein at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first onset wavelength; and at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second onset wavelength.
    Type: Grant
    Filed: December 24, 2020
    Date of Patent: August 22, 2023
    Assignee: OTI Lumionics Inc.
    Inventors: Michael Helander, Zhibin Wang
  • Patent number: 11730012
    Abstract: An opto-electronic device comprising a nucleation inhibiting coating (NIC) disposed on a surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability of the conductive coating is substantially less for the NIC than for the surface in the first portion, such that the first portion is substantially devoid of the conductive coating; and wherein the NIC comprises a compound having a formula such as that illustrated by the following formula (I).
    Type: Grant
    Filed: March 7, 2020
    Date of Patent: August 15, 2023
    Assignee: OTI Lumionics Inc.
    Inventors: Michael Helander, Scott Nicholas Genin, Zhibin Wang
  • Patent number: 11730048
    Abstract: A device includes: (1) a substrate; (2) a patterning coating covering at least a portion of the substrate, the patterning coating including a first region and a second region; and (3) a conductive coating covering the second region of the patterning coating, wherein the first region has a first initial sticking probability for a material of the conductive coating, the second region has a second initial sticking probability for the material of the conductive coating, and the second initial sticking probability is different from the first initial sticking probability.
    Type: Grant
    Filed: May 12, 2021
    Date of Patent: August 15, 2023
    Assignee: OTI Lumionic Inc.
    Inventors: Michael Helander, Zhibin Wang, Jacky Qiu