Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one low(er)-index coating disposed on a first layer surface and at least one EM radiation-modifying layer embedded within the at least one low(er)-index coating and comprising at least one particle structure comprising a deposited material. Embedding the at least one particle structure of the at least one EM radiation-modifying layer within the at least one low(er)-index coating modifies the absorption spectrum of the at least one EM radiation-modifying layer for EM radiation passing at least partially therethrough at a non-zero angle relative to the lateral aspect therein in at least a part of the EM spectrum.

Abstract: A method of solving a problem can include providing a fermionic Hamiltonian, transformation of the fermionic Hamiltonian to qubit operators, transformation of the fermionic Hamiltonian in qubit operators to a mean-field Hamiltonian, and embedding the Hamiltonian onto a quantum computer. Such systems and methods may improve upon existing methods for solving electronic structure problems on a computer by adapting the problem to available hardware, reducing computational cost, and reducing the number of required qubits to solve electronic structure problems for larger number of atoms.

Abstract: An opto-electronic device comprises light transmissive regions extending through it along a first axis to allow passage of light therethrough. The transmissive regions may be arranged along a plurality of transverse configuration axes. Emissive regions may lie between adjacent transmissive regions along a plurality of configuration axes to emit light from the device. Each transmissive region has a lateral closed boundary having a shape to alter at least one characteristic of a diffraction pattern exhibited when light is transmitted through the device to mitigate interference by such pattern. An opaque coating may comprise at least one aperture defining a corresponding transmissive region to preclude transmission of light therethrough other than through the transmissive region(s). The device can form a face of a user device having a body and housing a transceiver positioned to receive light along at least one light transmissive region.

Abstract: A semiconductor device that facilitates absorption of EM radiation thereon and a method manufacturing same. The device extends in at least one lateral aspect. An EM radiation-absorbing layer comprising a discontinuous layer of at least one particle structure comprising a deposited material is deposited on a first layer surface. The particle structures facilitate absorption of EM radiation incident thereon and may comprise a seed about which the deposited material may tend to coalesce, and/or comprise the deposited material co-deposited with a co-deposited dielectric material. The EM radiation-absorbing layer may be disposed on a supporting dielectric layer and/or be covered by a covering dielectric layer. A patterning coating having an initial sticking probability against deposition of the deposited and/or a seed material, on a surface of the patterning coating is less than the initial sticking probability against deposition of the deposited and/or seed material on the second layer surface.

Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I)

Abstract: A device having a plurality of layers comprises a nucleation-inhibiting coating (NIC) disposed on a first layer surface in a first portion of a lateral aspect thereof; and a deposited layer comprised of a deposited material, disposed on a second layer surface, wherein an initial sticking probability against deposition of the deposited layer onto a surface of the NIC in the first portion is substantially less than the initial sticking probability against deposition of the deposited layer onto the second layer surface, such that the NIC is substantially devoid of a closed coating of the deposited material and wherein the NIC comprises a compound containing a rare earth element. The deposited layer can comprise a closed coating on the second layer surface in a second portion of the lateral aspect, and/or a discontinuous layer of at least one particle structure on a surface of the NIC.

Abstract: A device includes: (1) a substrate; (2) a patterning coating covering at least a portion of the substrate, the patterning coating including a first region and a second region; and (3) a conductive coating covering the second region of the patterning coating, wherein the first region has a first initial sticking probability for a material of the conductive coating, the second region has a second initial sticking probability for the material of the conductive coating, and the second initial sticking probability is different from the first initial sticking probability.

Abstract: A semiconductor device having a plurality of layers deposited on a substrate and extending in a first portion and a second portion of at least one lateral aspect defined by a lateral axis thereof, comprises an orientation layer comprising an orientation material, disposed on a first exposed layer surface of the device in at least the first portion; at least one patterning layer comprising a patterning material, disposed on a first exposed layer surface of the orientation layer; and at least one deposited layer comprising a deposited material, disposed on a second exposed layer surface of the device in the second portion; wherein the first portion is substantially devoid of a closed coating of the deposited material.

Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

Abstract: A semiconductor device having a plurality of layers that extend in an interface portion and a non-interface portion of at least one lateral aspect defined by a lateral axis of the device. A low(er)-index layer, that may comprise a low-index material, that has a first refractive index at a wavelength, is disposed on a first layer surface in at least the interface portion. A higher-index layer, that may comprise a high-index material, that has a second refractive index at a wavelength, is disposed on an exposed layer surface of the device, to define an index interface with the low(er)-index layer in the interface portion. The second refractive index exceeds the first refractive index. A quantity of deposited material may be disposed on a second layer surface in the non-interface portion. The higher-index layer may cover the deposited material in the non-interface portion.

Abstract: A method for depositing a conductive coating on a surface is provided, the method including treating the surface by depositing fullerene on the surface to produce a treated surface and depositing the conductive coating on the treated surface. The conductive coating generally includes magnesium. A product and an organic optoelectronic device produced according to the method are also provided.

Abstract: An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I).

Abstract: An opto-electronic device having a plurality of layers, comprising a nucleation-inhibiting coating (NIC) disposed on a first layer surface in a first portion of a lateral aspect thereof. In the first portion, the device comprises a first electrode, a second electrode and a semiconducting layer between them. The second electrode lies between the NIC and the semiconducting layer in the first portion. In the second portion, a conductive coating is disposed on a second layer surface. The first portion is substantially devoid of the conductive coating. The conductive coating is electrically coupled to the second electrode and to a third electrode in a sheltered region of a partition in the device.

Abstract: An opto-electronic device having a plurality of layers, comprising a first capping layer (CPL) comprising a first CPL material and disposed in a first emissive region configured to emit photons having a first wavelength spectrum that is characterized by a first onset wavelength; and a second CPL comprising a second CPL material and disposed in a second emissive region configured to emit photons having a second wavelength spectrum that is characterized by a second onset wavelength; wherein at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first onset wavelength; and at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second onset wavelength.

Abstract: An opto-electronic device comprising a nucleation inhibiting coating (NIC) disposed on a surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability of the conductive coating is substantially less for the NIC than for the surface in the first portion, such that the first portion is substantially devoid of the conductive coating; and wherein the NIC comprises a compound having a formula such as that illustrated by the following formula (I).

Abstract: A device includes: (1) a substrate; (2) a patterning coating covering at least a portion of the substrate, the patterning coating including a first region and a second region; and (3) a conductive coating covering the second region of the patterning coating, wherein the first region has a first initial sticking probability for a material of the conductive coating, the second region has a second initial sticking probability for the material of the conductive coating, and the second initial sticking probability is different from the first initial sticking probability.

Abstract: A phosphazene derivative compound including a chain moiety including a backbone and an attached fluorine atom and an opto-electronic device including such compound. The chain moiety includes an intermediate moiety, a terminal moiety arranged at a terminal portion of thereof bonded to the intermediate moiety, and/or a core moiety comprising a phosphazene unit attached to the chain moiety, including by a linker moiety of the chain moiety. The chain moiety attaches to the phosphorous atom of the unit and/r comprises a cyclophosphazene comprising a plurality of units. The device has two electrodes and an active region comprising a semiconducting layer bounded longitudinally by the electrodes and laterally confined to an emissive region defined thereby that lacks the compound. A device patterning coating includes the compound in a first lateral portion. The device has a deposited layer of deposited material, but the first portion lacks a closed coating of deposited material.

Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

Abstract: An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

Abstract: An opto-electronic device comprises light transmissive regions extending through it along a first axis to allow passage of light therethrough. The transmissive regions may be arranged along a plurality of transverse configuration axes. Emissive regions may lie between adjacent transmissive regions along a plurality of configuration axes to emit light from the device. Each transmissive region has a lateral closed boundary having a shape to alter at least one characteristic of a diffraction pattern exhibited when light is transmitted through the device to mitigate interference by such pattern. An opaque coating may comprise at least one aperture defining a corresponding transmissive region to preclude transmission of light therethrough other than through the transmissive region(s). The device can form a face of a user device having a body and housing a transceiver positioned to receive light along at least one light transmissive region.