Patents Assigned to Ovonyx, Inc.
  • Method and apparatus for driving an electronic load
    Patent number: 7466584
    Abstract: An electronic system includes a control device in combination with an ovonic threshold switch (OTS). The control device, which may be a field effect transistor, a bipolar junction transistor, or a three-terminal ovonic threshold switch, for example, is configured to trigger the OTS. The OTS, a high current-density device, may be configured to drive greater loads than the control device itself would be capable of driving.
    Type: Grant
    Filed: January 2, 2008
    Date of Patent: December 16, 2008
    Assignee: Ovonyx, Inc.
    Inventors: Ward Parkinson, John Peters
  • Programmable resistance memory element with threshold switching material
    Patent number: 7459762
    Abstract: A programmable resistance memory element comprising a dielectric material between a programmable resistance memory material and a threshold switching material.
    Type: Grant
    Filed: January 26, 2006
    Date of Patent: December 2, 2008
    Assignee: Ovonyx, Inc.
    Inventors: Sergey A. Kostylev, Wolodymyr Czubatyj
  • Reading a phase change memory
    Patent number: 7453715
    Abstract: A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals.
    Type: Grant
    Filed: March 30, 2005
    Date of Patent: November 18, 2008
    Assignee: Ovonyx, Inc.
    Inventor: Ward D. Parkinson
  • Static random access memory cell using chalcogenide
    Patent number: 7426135
    Abstract: A static random access memory may be formed using a bitline and a bitline bar coupled to ovonic threshold switches. The ovonic threshold switches may, in turn, be coupled to cross coupled NMOS transistors. In some embodiments, a very compact static random access memory may result.
    Type: Grant
    Filed: June 22, 2005
    Date of Patent: September 16, 2008
    Assignee: Ovonyx, Inc.
    Inventors: Tyler A Lowrey, Ward D. Parkinson
  • Forming tapered lower electrode phase-change memories
    Patent number: 7422917
    Abstract: A phase-change memory may have a tapered lower electrode coated with an insulator. The coated, tapered electrode acts as a mask for a self-aligned trench etch to electrically separate adjacent wordlines. In some embodiments, the tapered lower electrode may be formed over a plurality of doped regions, and isotropic etching may be used to taper the electrode as well as part of the underlying doped regions.
    Type: Grant
    Filed: April 11, 2005
    Date of Patent: September 9, 2008
    Assignee: Ovonyx, Inc.
    Inventor: Daniel Xu
  • Method of operating a programmable resistance memory array
    Patent number: 7423897
    Abstract: A method of operating a programmable resistance memory array. The method comprises writing to all of the programmable resistance elements within the same row of the memory array at substantially the same time. The programmable resistance elements preferably include phase-change materials such as chalcogenides.
    Type: Grant
    Filed: October 1, 2004
    Date of Patent: September 9, 2008
    Assignee: Ovonyx, Inc.
    Inventor: Guy C. Wicker
  • Damascene phase change memory
    Patent number: 7420200
    Abstract: A phase change material may include a pore formed of a relatively smaller phase change material and a relatively larger resistance heater. As a result, the relatively smaller portion of phase change material may have improved properties.
    Type: Grant
    Filed: January 4, 2007
    Date of Patent: September 2, 2008
    Assignee: Ovonyx, Inc.
    Inventor: Ilya V. Karpov
  • Electrically programmable memory element with improved contacts
    Patent number: 7407829
    Abstract: A method of making an electrically programmable memory element, comprising: providing a first dielectric layer; forming a conductive material over the first dielectric layer; forming a second dielectric layer over the conductive material; and forming a programmable resistance material in electrical contact with a peripheral surface of the conductive material.
    Type: Grant
    Filed: March 12, 2004
    Date of Patent: August 5, 2008
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Stanford R. Ovshinsky, Guy C. Wicker, Patrick J. Klersy, Boil Pashmakov, Wolodymyr Czubatyj, Sergey A. Kostylev
  • Manufacturing method of a contact structure and phase change memory cell with elimination of double contacts
    Patent number: 7402455
    Abstract: The method forms a phase change memory cell with a resistive element and a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction which is transverse to said first direction. The first and second thin portions are in direct electrical contact and define a contact area having sublithographic extent. The second thin portion is formed in a slit of sublithographic dimensions. According to a first solution, oxide spacer portions are formed in a lithographic opening, delimited by a mold layer. According to a different solution, a sacrificial region is formed on top of a mold layer and is used for forming the sublithographic slit in the mold layer.
    Type: Grant
    Filed: June 20, 2005
    Date of Patent: July 22, 2008
    Assignees: STMicroelectronics S.r.l., Ovonyx Inc.
    Inventors: Fabio Pellizzer, Agostino Pirovano
  • Damascene conductive line for contacting an underlying memory element
    Patent number: 7399655
    Abstract: A damascene approach may be utilized to form an electrode to a lower conductive line in a phase change memory. The phase change memory may be formed of a plurality of isolated memory cells, each including a phase change memory threshold switch and a phase change memory storage element.
    Type: Grant
    Filed: August 4, 2003
    Date of Patent: July 15, 2008
    Assignee: Ovonyx, Inc.
    Inventor: Charles H. Dennison
  • Three-dimensional phase-change memory
    Patent number: 7391045
    Abstract: A three-dimensional phase-change memory array. In one embodiment of the invention, the memory array includes a first plurality of diodes, a second plurality of diodes disposed above the first plurality of diodes, a first plurality phase-change memory elements disposed above the first and second plurality of diodes and a second plurality of memory elements disposed above the first plurality of memory elements.
    Type: Grant
    Filed: September 18, 2006
    Date of Patent: June 24, 2008
    Assignee: Ovonyx, Inc.
    Inventor: Tyler Lowrey
  • Page mode access for non-volatile memory arrays
    Patent number: 7391664
    Abstract: An array of non-volatiel memory cells arranged in logical columns and logical rows, and associated circuitry to enable reading or writing one or more memory cells on a row in parallel. In some embodiments, the array of memory cells may include a phase change material. In some embodiments, the circuitry may include a write driver, a read driver, a sense amplifier, and circuitry to isolate the memory cells from the sense amplifier with extended refresh.
    Type: Grant
    Filed: April 27, 2006
    Date of Patent: June 24, 2008
    Assignee: Ovonyx, Inc.
    Inventors: Ward Parkinson, Yukio Fuji
  • Detecting switching of access elements of phase change memory cells
    Patent number: 7388775
    Abstract: A memory includes a storage element (OUM) made of a phase-change material for storing a logic value and an access element (OTS) switching from a higher resistance condition to a lower resistance condition in response to a selection of the memory cell, the access element in the higher resistance condition decoupling the storage element from a read circuit and in the lower resistance condition coupling the storage element to the read circuit. The read circuit includes a sense amplifier to determine the logic value stored in the memory cell according to an electrical quantity associated with the memory cell. The read circuit further includes a detector that detects the switching of the access element by comparison to a delayed waveform or sensing a change in the column rate of change, and a circuit to enable the sense amplifier in response to the detection of the switching of the access element.
    Type: Grant
    Filed: September 26, 2006
    Date of Patent: June 17, 2008
    Assignee: Ovonyx, Inc.
    Inventors: Ferdinando Bedeschi, Claudio Resta, Ward D. Parkinson, Roberto Gastaldi
  • Programmable matrix array with phase-change material
    Patent number: 7365355
    Abstract: A phase-change material is proposed for coupling interconnect lines an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer between the phase change material and at least one of the lines. The matrix array may be used in a programmable logic device. The logic portions of the programmable logic device may be tri-stated.
    Type: Grant
    Filed: December 15, 2004
    Date of Patent: April 29, 2008
    Assignee: Ovonyx, Inc.
    Inventor: Ward Parkinson
  • Vertical elevated pore phase change memory
    Patent number: 7364937
    Abstract: A vertical elevated pore structure for a phase change memory may include a pore with a lower electrode beneath the pore contacting the phase change material in the pore. The lower electrode may be made up of a higher resistivity lower electrode and a lower resistivity lower electrode underneath the higher resistivity lower electrode. As a result, more uniform heating of the phase change material may be achieved in some embodiments and better contact may be made in some cases.
    Type: Grant
    Filed: November 10, 2005
    Date of Patent: April 29, 2008
    Assignee: Ovonyx, Inc.
    Inventor: Tyler Lowrey
  • Programmable resistance memory element and method for making same
    Patent number: 7365354
    Abstract: A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.
    Type: Grant
    Filed: December 2, 2002
    Date of Patent: April 29, 2008
    Assignee: Ovonyx, Inc.
    Inventor: Jon Maimon
  • Forming phase change memories
    Patent number: 7348620
    Abstract: Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the phase changes. The heater may be coupled to an appropriate conductor.
    Type: Grant
    Filed: February 13, 2007
    Date of Patent: March 25, 2008
    Assignee: Ovonyx, Inc.
    Inventors: Chien Chiang, Charles Dennison, Tyler Lowrey
  • Method of operating a programmable resistance memory array
    Patent number: 7339815
    Abstract: A method of operating a programmable resistance memory array. The method comprises writing to all of the programmable resistance elements within the same row of the memory array at substantially the same time. The programmable resistance elements preferably include phase-change materials such as chalcogenides.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: March 4, 2008
    Assignee: Ovonyx, Inc.
    Inventor: Guy C. Wicker
  • Increasing adherence of dielectrics to phase change materials
    Patent number: 7338857
    Abstract: A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material.
    Type: Grant
    Filed: October 14, 2004
    Date of Patent: March 4, 2008
    Assignee: Ovonyx, Inc.
    Inventors: Paola Besana, Tina Marangon, Amos Galbiati
  • Composite Chalcogenide Materials and Devices
    Publication number: 20080035907
    Abstract: An electrical device includes a composite switching material. The composite switching material includes an electrically switchable component and a non-switchable component. In one embodiment, the composite switching material includes a heterogeneous mixture of at least one chalcogenide material and at least one dielectric material. The composite switching material is disposed between two electrodes and the switchable component is transformable from a resistive state to a conductive state upon application of a voltage between the two electrodes, without changing phase.
    Type: Application
    Filed: October 18, 2007
    Publication date: February 14, 2008
    Applicant: Ovonyx, Inc.
    Inventors: Wolodymyr Czubatyj, Sergey Kostylev, Tyler Lowrey