Abstract: Angle dispersive X-ray diffraction is used to test pharmaceutical products including a dosage form inside packaging, for example a tablet inside a blister pack, without removing the dosage form from the packaging. The dosage form is aligned with a measurement system having an X-ray source for generating X-rays, X-ray optics, and an X-ray detector for detection of X-rays. Then, at least one X-ray signature is measured on a predetermined location on the dosage form. The measured X-ray signature is compared with reference X-ray signatures in a data library.

Abstract: An X-ray fluorescence (XRF) apparatus uses both an analyzer crystal (6) and a silicon drift detector (34). By using this combination problems of background and overlapping peaks can be mitigated.

Abstract: A hybrid imaging detector is for detecting ionizing radiation such as X-rays or electron radiation, or other ionizing radiation. The detector has a sensor (10) on a read-out chip (20). The sensor (10) includes a plurality of sensor material layers (12,14) of different materials stacked on top of one another, having differing radiation absorbing properties. The materials may be Si and SiGe, Si and Ge, or Si and amorphous Se, for example.

Abstract: An X-ray scattering chamber 12 includes a housing 14 that may be mounted in X-ray diffraction equipment between an X-ray source 2 and an X-ray detector 4, for example on goniometer arm 6. The housing 14 includes sample holder 16 and beam conditioning optics 22,24, but the system also makes use of primary optics 10 outside the housing. The equipment is suitable for SAXS and/or SAXS-WAXS.

Abstract: A sensor for detecting ionizing radiation such as X-rays or electrons in an imaging detector, with a germanium substrate 12 and top and bottom silicon layers 14,16. The silicon layers may be passivated. The bulk of absorption takes place in the germanium. Anode and cathode electrodes 44, 46 may be provided alternately to laterally bias the substrate. Alternatively, the silicon layers may be doped to vertically bias the substrate.

Abstract: A method of correcting for aberrations in scattering data is described which does not require prior knowledge about the sample microstructure properties or calculations based on the modelling of peak locations. In an example, X-ray scattering apparatus integrates a correction device arranged to automatically calculate and output aberration corrected output X-ray pattern using the aberration Fourier presentation Finst(H,2?) dependent from the scattering angle 2? and the Fourier transform of the measured X-ray scattering pattern Fexp(H).

Abstract: X-ray apparatus 10 includes an X-ray source (22), an X-ray detector (28) facing the X-ray source. Inlet (6) accepts a stream of particles and a guide system (18) guides the stream of particles (16) in free space between the X-ray source (22) and detector (28) so that X-ray analysis can be carried out on the particles in the stream (16) in a sample region (21) between the source (22) and the detector (28).

Abstract: An X-ray scattering chamber 12 includes a housing 14 that may be mounted in X-ray diffraction equipment between an X-ray source 2 and an X-ray detector 4, for example on goniometer arm 6. The housing 14 includes sample holder 16 and beam conditioning optics 22,24, but the system also makes use of primary optics 10 outside the housing. The equipment is suitable for SAXS and/or SAXS-WAXS.

Abstract: A high resolution X-ray diffraction apparatus includes a source 4 of X-rays and a slit 6 to direct a collimated beam of X-rays 11 onto a sample 16 on a sample stage 8. Detector 10 records the intensity of diffracted X-rays as a function of position along its length. The geometry allows high resolution without the use of a monochromator.

Abstract: An X-ray optical diaphragm (3; 4) which is provided with at least one passage opening (3a; 4a) for rays is constructed in such a manner that the edge zone (9; 10) of the X-ray optical diaphragm (3; 4) which faces the passage opening (3a; 4a) is angulated at least partly relative to the direction of propagation (7) of the rays.

Abstract: A monochromator 4 is used to direct X-rays from X-ray source 2 onto a sample 14 as a convergent beam. The sample 14 is in a growth chamber. The sample is rotated, and diffraction measurements are made in parallel with multichannel detector 22. A specific reflection is used so that the intensity against angle graph measured in the multichannel detector gives information about the vertical lattice parameter. To compensate for wobble inevitably introduced by the rotation of the sample, short time measurements are made and summed.

Abstract: A device (1; 1a) for the examination of at least one material sample (3; 3a, 3b, 3c) which can be inserted into the device (1; 1a) and is irradiated by means of electromagnetic waves (4), notably X-rays; in the measuring position the material sample (3; 3a, 3b, 3c) can be subjected to irradiation by means of the electromagnetic waves (4) and during a change of sample the beam path (4) can be interrupted by means of a closure element (8) which can be moved into the beam path. The device is constructed in such a manner that the closure element (8) is provided with a reference sample (9) on its side which faces the rays (4) in a manner such that a reference measurement can be performed thereon during a change of sample.

Abstract: A method for determining parameters of a material includes comparing a range of an actual x-ray scattering profile with a range of an expected x-ray scattering profile for a material sample. The expected profile is modified to match the actual profile and this is then repeated with an ever-larger range of the profiles until two profiles match across the whole of their profile. From the last modified expected profile the parameters of the material are determined.

Abstract: Each detector element 44 in a solid state position sensitive detector (PSD) could provide a low charge efficiency per X-ray quantum; moreover, a comparatively high stray capacitance 104 could exist between the take-off electrode 90 and the semiconductor material 86, 88, 92 whereto it is connected. These effects will give rise to a low signal-to-noise ratio, thus degrading the signal. According to the invention, the analog charge amplifiers 58 are constructed in integrated bipolar technology and their read-out circuitry 48 is embodied in digital technology, preferably in a BICMOS process in the form of the Current Mode Logic (CML) technique. Moreover, the digital signal processing circuitry may be accommodated on the same substrate as the charge amplifiers.

Abstract: The invention provides a crystal structure analysis method so as to analyze crystal structures in detail. The inventive method comprises incrementing the tilting angle &psgr; of the SBT thin film 1 by one degree in a range of 0 degree ≦y≦90 degrees, for each of the increments of the tilting angle &psgr; irradiating the X-ray onto the SBT thin film with the incident angle &thgr; being incremented by 0.025 degrees in a range of 0 degree ≦&thgr;≦90 degrees and detecting the X-rays diffracted from the SBT thin film 1 by the detector 3.

Abstract: An X-ray diffractometer has an X-ray source (10), a double pinhole collimator (14), a sample (22) mounted on a rotatable sample stage (20), an analyser crystal (30) and a detector (34). The analyser crystal and detector are arranged to rotate together about an axis (21) that is coaxial with the axis of rotation of the sample stage. Very few scattered X-rays (26) reach the detector (34). The diffractometer has particular use for routine quality control measurements.