Abstract: An industrially hardened terahertz electromagnetic transmitter and receiver module (29) is disclosed. The electromagnetic wave module has an optic (30) which relays an optical pulse from the delivery fiber (32) to the terahertz device. The relay optic (30) allows for a greatly reduced optical spot size as compared to the output of the optical fiber. Thus, the sensitivity of the overall system is enhanced by improving the efficiency of the terahertz device. The relay optic (30) allows the small spot of light to be aligned to the electromagnetic transmitter or receiver with sub-micron precision.
Type:
Grant
Filed:
September 4, 2002
Date of Patent:
November 9, 2004
Assignee:
Picometrix, Inc.
Inventors:
James V. Rudd, Matthew W. Warmuth, Steven L. Williamson, David A. Zimdars
Abstract: The present invention includes a semiconductor epitaxial structure optimized for photoconductive free space terahertz generation and detection; and amplifier circuits for photoconductively sampled terahertz detection which may employ the optimized epitaxial structures.
Type:
Application
Filed:
November 29, 2002
Publication date:
July 10, 2003
Applicant:
Picometrix, Inc.
Inventors:
Steven L. Williamson, James V. Rudd, David Zimdars, Matthew Warmuth, Artur Chernovsky
Abstract: An electromagnetic radiation emitter which utilizes a precompensator, pulsed light signal, optical fiber cable, and a terahertz radiation generator. The present invention incorporates an optical precompensator to correct for the stretching of an optical signal as it travels through an optical fiber cable. The dispersion characteristics of the precompensator will be equal and opposite to the dispersion characteristics of the optical fiber cable, maintaining the fidelity of optical pulses as they travel through and exit the optical fiber cable striking a device that generates terahertz electromagnetic radiation.
Abstract: A semiconductor p-i-n photodiode having a substrate, an n layer coupled to the surface of said substrate, an i layer coupled to the surface of said n layer, and a carbon doped p layer coupled to the surface of said i layer.
Type:
Grant
Filed:
September 25, 1998
Date of Patent:
July 17, 2001
Assignee:
Picometrix, Inc.
Inventors:
Steven L. Williamson, Robert N. Sacks, Janis A. Valdmanis, Kadhair Al Hemyari