Abstract: A micro LED display panel includes a driving substrate and a plurality of micro light emitting diodes (LEDs). The driving substrate has a plurality of pixel regions. Each of the pixel regions includes a plurality of sub-pixel regions. The micro LEDs are located on the driving substrate. At least one of the sub-pixel regions is provided with two micro LEDs of the micro LEDs electrically connected in series, and a dominant wavelength of the two micro LEDs is within a wavelength range of a specific color light. In a repaired sub-pixel region of the sub-pixel regions, only one of the two micro LEDs emits light. In a normal sub-pixel region of the sub-pixel regions, both of the two micro LEDs emit light.

Abstract: A micro light-emitting diode chip includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer, and the epitaxial structure further includes a first surface, a side surface and a second surface opposite to the first surface. The side surface of the epitaxial structure connects to an outer edge of the first surface and an outer edge of the second surface. The first electrode is disposed on the first surface, and is electrically connected to the first type doped semiconductor layer and contacts the first type doped semiconductor layer on a portion of the first surface. The second electrode is disposed on and surrounds the side surface, and electrically connected to the second type doped semiconductor layer, and directly contacts the second type doped semiconductor layer on a portion of the side surface.

Abstract: A method of manufacturing display device is disclosed. a substrate includes a basal layer and metal contacts on the top surface. An insulation layer is disposed on the top surface and includes a first mounting surface and a bottom surface. Multiple grooves are formed on the insulation layer and each extends from the first mounting surface to the bottom surface. The grooves respectively correspond to the metal contacts and expose respective metal contacts. An electromagnetic force is provided with a direction from the basal layer toward the insulation layer. A droplet containing multiple micro components is provided on the first mounting surface. A configuration of an electrode of the micro component corresponds to a configuration of one of the grooves. The electrode is attracted to the corresponding groove by the electromagnetic force so as to electrically contact the metal contact.

Abstract: A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.

Abstract: A transfer carrier is adapted to be connected to an electrode of a micro light-emitting element and transfer the micro light-emitting element. A transfer carrier includes a transfer substrate and a plurality of metal bonding pads. The metal bonding pads are disposed on the transfer substrate, and every two metal bonding pads that are adjacent to each other are spaced apart from each other through a gap.

Abstract: A structure with micro devices includes a substrate, at least one micro device, and at least one holding structure. The micro device is disposed on the substrate. The micro device has a top surface and a bottom surface opposite to each other, a peripheral surface connected with the top surface and the bottom surface, a first-type electrode, and a second-type electrode. The holding structure is disposed on the substrate and is away from the first-type electrode and the second-type electrode. The holding structure includes at least one connecting portion and at least one holding portion. The connecting portion is disposed on an edge of the top surface of the micro device. The holding portion is connected to the connecting portion and extends onto the substrate.

Abstract: A method of manufacturing micro light-emitting element array is disclosed. A transfer substrate and at least one metal bonding pad are provided, and the metal bonding pad is disposed on the transfer substrate. A growth substrate and a plurality of micro light-emitting elements are provided. The micro light-emitting elements are disposed on the growth substrate, and a surface of each of the micro light-emitting elements away from the growth substrate having at least one electrode. The metal bonding pad is molten at a heating temperature, and the electrode is connected to the metal bonding pad. Then, the growth substrate is removed.

Abstract: A method of manufacturing display device is disclosed. a substrate includes a basal layer and metal contacts on the top surface. An insulation layer is disposed on the top surface and includes a first mounting surface and a bottom surface. Multiple grooves are formed on the insulation layer and each extends from the first mounting surface to the bottom surface. The grooves respectively correspond to the metal contacts and expose respective metal contacts. An electromagnetic force is provided with a direction from the basal layer toward the insulation layer. A droplet containing multiple micro components is provided on the first mounting surface. A configuration of an electrode of the micro component corresponds to a configuration of one of the grooves. The electrode is attracted to the corresponding groove by the electromagnetic force so as to electrically contact the metal contact.

Abstract: A micro light emitting diode display panel including a plurality of pixels and a control element is provided. One of the pixels include a first sub-pixel. The first sub-pixel includes two micro light emitting diodes having different light wavelengths and controlled independently. The control element controls driving currents to the two micro light emitting diodes according to a gray level of the first sub-pixel, wherein a ratio of the driving current of the micro light emitting diode with larger light wavelength to the driving current of the micro light emitting diode with smaller light wavelength increases as the gray level of the first sub-pixel increases. A driving method of the micro light emitting diode display panel is also provided.

Abstract: A micro light emitting device includes an epitaxial structure and a first type electrode. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first type semiconductor layer has a first accommodating cavity. The first type electrode is disposed on the first accommodating cavity. A maximum width of the first type electrode is greater than or equal to a maximum width of an upper surface of the first type semiconductor layer.

Abstract: A micro light-emitting device includes an epitaxial structure, a first type pad, a current commanding structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer. The first type pad is disposed on the epitaxial structure and electrically connected to the first type semiconductor layer. The current commanding structure is disposed on the epitaxial structure and electrically connected to the second type semiconductor layer. An orthogonal projection area of the current commanding structure on the second type semiconductor layer is smaller than a surface area of a surface of the second type semiconductor layer. The insulating layer contacts a portion of the current commanding structure and a portion of the surface of the second type semiconductor layer. The insulating layer has an opening exposing at least a portion of the portion of the current commanding structure.

Abstract: A micro device includes an epitaxial structure and a light guide structure. The epitaxial structure has a top surface. The light guide structure is disposed on the top surface, and the light guide structure includes a connecting portion and a covering portion. The connecting portion is disposed on an edge of the epitaxial structure and extends along a sidewall of the epitaxial structure. The covering portion is disposed on the top surface and connected to the connecting portion. A width of the connecting portion at the edge of the epitaxial structure is smaller than a width away from the top surface.

Abstract: A display panel includes a first substrate, a plurality of first color micro light emitting diodes (LEDs), a plurality of second color LEDs and a shading layer. The first substrate has a plurality of pixel zones arranged in an array form. Each of the first color LEDs has a first light emitting surface facing to a display direction. Each of the second color LEDs has a second light emitting surface facing to the display direction. Each of the pixel zones is provided with one of the first color micro LEDs and one of the second color LEDs. The shading layer is disposed in the pixel zones. The shading layer overlaps part of the first light emitting surface and part of the second light emitting surface in the display direction.

Abstract: A micro-LED display panel including a substrate, an anisotropic conductive film, and a plurality of micro-LEDs is provided. The anisotropic conductive film is disposed on the substrate. The micro-LEDs and the anisotropic conductive film are disposed at the same side of the substrate, and the micro-LEDs are electrically connected to the substrate through the anisotropic conductive film. Each of the micro-LEDs includes an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layers comprises a first electrode and a second electrode which are located between the substrate and the corresponding epitaxial layer. A ratio of a thickness of each of the electrode layers to a thickness of the corresponding epitaxial layer ranges from 0.1 to 0.5, and a gap between the first electrode and the second electrode of each of the micro-LEDs is in a range of 1 ?m to 30 ?m.

Abstract: A display substrate comprises a base board and a first bonding pad. The base board comprises a first surface having a first bonding district. The first bonding pad is disposed on the first surface. The first bonding pad is configured to electrically connect to a first electrode of a light emitting component in the first bonding district. The first bonding pad comprises a main bonding portion and an auxiliary bonding portion, wherein at least a part of an orthogonal projection of the main bonding portion on the base board is in the first bonding district. The auxiliary bonding portion electrically connects to the main bonding portion, wherein at least a part of an orthogonal projection of the auxiliary bonding portion on the base board is outside the first bonding district. There is a gap between the main bonding portion and the auxiliary bonding portion.

Abstract: A method for manufacturing a micro light emitting diode device is provided. A connection layer and epitaxial structures are formed on a substrate. A first pad is formed on each of the epitaxial structures. A first adhesive layer is formed on the connection layer, and the first adhesive layer encapsulates the epitaxial structures and the first pads. A first substrate is connected to the first adhesive layer. The substrate is removed, and a second substrate is connected to the connection layer through a second adhesive layer. The first substrate and the first adhesive layer are removed. The connection layer located between any two adjacent epitaxial structures are partially removed to form a plurality of connection portions. Each of the connection portions is connected to the corresponding epitaxial structure, and a side edge of each of the connection portions protrudes from a side wall surface of the corresponding epitaxial structure.

Abstract: A display panel of micro light emitting diode comprises a substrate, a plurality of micro light emitting diodes, a plurality of driving chips and a shading layer. The substrate having a first surface and a display area. The plurality of micro light emitting diodes is disposed on the first surface of the substrate and is located in the display area, with each of the micro light emitting diodes having a light emitting surface while the light emitting surface is away from the first surface of the substrate. The plurality of driving chips is disposed on the first surface of the substrate and is located in the display area, with each driving chip electrically connecting to at least one of the micro light emitting diodes. The shading layer is disposed on the first surface of the substrate and covering the driving chips while exposing the light emitting surfaces.

Abstract: A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.

Abstract: A structure with micro device including a substrate, at least one micro device, and at least one holding structure is provided. The micro device having a top surface is disposed on the substrate, and the top surface is away from the substrate. The holding structure including at least one connecting portion and at least one holding portion is disposed on the substrate. The connecting portion is disposed on at least one edge of the micro device. The holding portion connects the connecting portion and extends to the substrate. From a top view direction, a width of the connecting portion gradually increases from the edge of the micro device to the holding portion.

Abstract: A structure with micro device includes a substrate, a plurality of micro devices, and a plurality of holding structures. The micro devices are disposed on the substrate and arranged in multiple rows. Each of the micro devices has a top surface. The holding structures are respectively disposed on the top surface of each of the micro devices and extend to the substrate. Distances between the holding structure on the micro devices on any one of the rows and the holding structures on the micro devices on two adjacent rows are different.