Abstract: A display panel comprises a first substrate and a shading layer. The first substrate comprises a plurality of pixel zones arranging in an array form. Each of the pixel zones comprises a first color LED and a second color LED. The first color LED comprise a first light-emitting surface in a display direction. The second color LED comprise a second light-emitting surface in the display direction. An area of the first light-emitting surface is larger than an area of the second light-emitting surface. The shading layer is disposed in the plurality of pixel zones, and the shading layer overlaps some of the first light-emitting surfaces at the display direction.

Abstract: A method for manufacturing a micro light emitting diode device is provided. A connection layer and a plurality of epitaxial structures are formed on a substrate, wherein the epitaxial structures are separated from each other and relative positions therebetween are fixed via the connection layer. A first pad is formed on each of the epitaxial structures. A plurality of light blocking layers are formed between the epitaxial structures, wherein the light blocking layers and the epitaxial structures are alternately arranged. Each of the epitaxial structures is bonded to a destination substrate after forming the light blocking layers. The substrate is removed to expose the connection layer. A light conversion layer is formed corresponding to each of the epitaxial structures, wherein a width of the light conversion layer is greater than or equal to a distance between any two of the light blocking layers.

Abstract: Disclosed are an epitaxial wafer and a display device that includes a display substrate, a first sub pixel unit and a second sub pixel unit. The first sub pixel unit has a first luminous area, and the second sub pixel unit has a second luminous area different from the first luminous area. The first sub pixel unit and the second sub pixel unit belong to the same color type and are located in different pixel units. The first sub pixel unit is a sub epitaxial structure emitting light within a first photoluminescent wavelength, the second sub pixel unit is a sub epitaxial structure emitting light within a second photoluminescent wavelength, and the first photoluminescent wavelength is different from the second photoluminescent wavelength. The difference between electroluminescent wavelengths of the first sub pixel unit and the second sub pixel unit is less than or equal to 2 nm.

Abstract: A micro light emitting diode display panel including a plurality of pixels and a control element is provided. One of the pixels include a first sub-pixel. The first sub-pixel includes two micro light emitting diodes having different light wavelengths and controlled independently. The control element controls driving currents to the two micro light emitting diodes according to a gray level of the first sub-pixel, wherein a ratio of the driving current of the micro light emitting diode with larger light wavelength to the driving current of the micro light emitting diode with smaller light wavelength increases as the gray level of the first sub-pixel increases. A driving method of the micro light emitting diode display panel is also provided.

Abstract: A micro-LED display panel including a substrate, an anisotropic conductive film, and a plurality of micro-LEDs is provided. The anisotropic conductive film is disposed on the substrate. The micro-LEDs and the anisotropic conductive film are disposed at the same side of the substrate, and the micro-LEDs are electrically connected to the substrate through the anisotropic conductive film. Each of the micro-LEDs includes an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layers comprises a first electrode and a second electrode which are located between the substrate and the corresponding epitaxial layer. A ratio of a thickness of each of the electrode layers to a thickness of the corresponding epitaxial layer ranges from 0.1 to 0.5, and a gap between the first electrode and the second electrode of each of the micro-LEDs is in a range of 1 ?m to 30 ?m.

Abstract: A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.

Abstract: A display panel and a repairing method thereof. The display panel includes micro LEDs and a circuit substrate. The circuit substrate includes first wires, second wires and connecting circuits. Respective one of the connecting circuits is configured to be electrically connected to respective one of the micro LEDs. Each of the connecting circuits includes a first pad, a second pad, a third pad and a connecting wire. The first pad is configured to be electrically connected to the corresponding micro LED and one of the first wires. The first and second pads are separated by a first gap. The second pad is configured to be electrically connected to one of the second wires. The second and third pads are separated by a second gap. The connecting wire is connected to the second pad and the third pad.

Abstract: A structure with micro device including a substrate, at least one micro device and at least one holding structure is provided. The micro device is disposed on the substrate and has a top surface away from the substrate, a bottom surface opposite to the top surface, and a circumferential surface connecting the top surface and the bottom surface. The holding structure is disposed on the substrate. From the cross-sectional view, a thickness of the holding structure is not fixed from the boundary of the top surface and the circumferential surface to the substrate. The micro device is connected to the substrate through the holding structure.

Abstract: A micro LED display panel comprises a substrate, a plurality of light emitting components, an insulating layer and a plurality of electrical components. The substrate comprises a first surface. The light emitting components are disposed on the first surface. The insulating layer is on the plurality of light emitting components and has a second surface and a third surface opposite to each other. The second surface faces the first surface. The electrical components are disposed on the third surface and electrically connect to the light emitting components. The number of the electrical components is less than the number of the light emitting components. The roughness of the third surface is greater than the roughness of the first surface.

Abstract: A method for manufacturing a wavelength converting film is provided. A release film is provided. At a least one coating process is performed to form at least one wavelength converting layer on the release film, wherein a first contact surface of the at least one wavelength converting layer and the release film has a first roughness. An adhesive layer is formed on a surface of the wavelength converting layer farthest from the release film, wherein a second contact surface of the adhesive layer and the wavelength converting layer has a second roughness. The second roughness is greater than the first roughness.

Abstract: A micro light emitting device includes an epitaxial structure and a first type electrode. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first type semiconductor layer has a first accommodating cavity. The first type electrode is disposed on the first accommodating cavity. A maximum width of the first type electrode is greater than or equal to a maximum width of an upper surface of the first type semiconductor layer.

Abstract: A display panel includes a substrate, a plurality of first light emitting diodes (LEDs), a plurality of second LEDs, a plurality of first common electrodes, and a plurality of second common electrodes. Each pixel unit of the substrate includes a first sub-pixel region and a second sub-pixel region. The first LEDs are disposed on the substrate and located in the first sub-pixel regions, and the second LEDs are disposed on the substrate and located in the second sub-pixel regions. A dominant wavelength of each of the first LEDs is different from that of each of the second LEDs. The first common electrodes are connected to and form an ohmic contact with the first LEDs. The second common electrodes are connected to and form an ohmic contact with the second LEDs. A material of the first common electrodes is different from that of the second common electrodes.

Abstract: A method of transferring micro devices is provided. A carrier substrate including a buffer layer and a plurality of micro devices is provided. The buffer layer is located between the carrier substrate and the micro devices. The micro devices are separated from one another and positioned on the carrier substrate through the buffer layer. A receiving substrate contacts the micro devices disposed on the carrier substrate. A temperature of at least one of the carrier substrate and the receiving substrate is changed after the micro devices contact the receiving substrate. At least a portion of the micro devices are transferred from the carrier substrate onto the receiving substrate after changing the temperature of at least one of the carrier substrate and the receiving substrate.

Abstract: A display device includes a display panel and at least one light modulation panel. The display panel includes a substrate and a plurality of micro light emitting semiconductors disposed on the substrate. The light modulation panel is disposed on a light emitting surface of the display panel and includes a light modulation unit. The light modulation panel is configured to change a transmittance of the light modulation unit according to a light modulation control signal.

Abstract: A display device including a backplane, a plurality of light-emitting devices, a first distributed Bragg reflector layer and a second distributed Bragg reflector layer is provided. The light-emitting devices are disposed on the backplane. The first distributed Bragg reflector layer is disposed between the backplane and the light-emitting devices. The light-emitting devices are disposed between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer. A projected area of the first distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane or a projected area of the second distributed Bragg reflector layer on the backplane is larger than a projected area of one light-emitting device on the backplane.

Abstract: A method of manufacturing display device is disclosed. a substrate includes a basal layer and metal contacts on the top surface. An insulation layer is disposed on the top surface and includes a first mounting surface and a bottom surface. Multiple grooves are formed on the insulation layer and each extends from the first mounting surface to the bottom surface. The grooves respectively correspond to the metal contacts and expose respective metal contacts. An electromagnetic force is provided with a direction from the basal layer toward the insulation layer. A droplet containing multiple micro components is provided on the first mounting surface. A configuration of an electrode of the micro component corresponds to a configuration of one of the grooves. The electrode is attracted to the corresponding groove by the electromagnetic force so as to electrically contact the metal contact.

Abstract: A method of forming a light emitting device is provided. A carrier with a plurality of buffer pads and a plurality of light emitting diode chips is provided, wherein the buffer pads are disposed between the carrier and the light emitting diode chips and are with Young's modulus of 2˜10 GPa. The carrier is positioned over a receiving substrate. A thermal bonding process is performed to electrically connect the light emitting diode chips to the receiving substrate, and wherein the buffer pads and the receiving substrate are located at opposite sides of each light emitting diode chip.

Abstract: A micro light emitting device includes an epitaxial structure, a first type electrode, and a second type electrode. The epitaxial structure has a first accommodating cavity. The first type electrode is disposed on the first accommodating cavity of the epitaxial structure and has a second accommodating cavity. The second type electrode is disposed on the epitaxial structure, wherein the epitaxial structure is located between the first type electrode and the second type electrode.

Abstract: A light emitting unit has a first electrode, a second electrode and an epitaxial structure disposed between the first electrode and the second electrode. The epitaxial structure has a light emission layer, a first type semiconductor layer disposed between the light emission layer and the first electrode, and a second type semiconductor layer disposed between the light emission layer and the second electrode. A first surface of the second type semiconductor layer is facing the light emission layer. The second type semiconductor layer has a second surface opposite to the first surface and the second surface has at least one recess. At least portion of the second electrode is disposed within the at least one recess. A display device has a substrate, a first electrode connection layer, a second electrode connection layer, and a plurality of aforementioned light emitting units.

Abstract: A micro light-emitting diode chip includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer, and the epitaxial structure further includes a first surface, a side surface and a second surface opposite to the first surface. The side surface of the epitaxial structure connects to an outer edge of the first surface and an outer edge of the second surface. The first electrode is disposed on the first surface, and is electrically connected to the first type doped semiconductor layer and contacts the first type doped semiconductor layer on a portion of the first surface. The second electrode is disposed on and surrounds the side surface, and electrically connected to the second type doped semiconductor layer, and directly contacts the second type doped semiconductor layer on a portion of the side surface.