Patents Assigned to Pohang University of Science & Technology
  • Publication number: 20030209953
    Abstract: A novel multi-mode vibration damper is invented by using a pair of piezoelectric patches connected with negative capacitance shunt circuit units. A piezoelectric material connected with a series resistor-negative capacitor branch circuit is capable of suppressing the vibration and/or noise amplitudes in the low frequency range. The other piezoelectric material connected with a parallel resistor-negative capacitor circuit is for suppressing the vibration and/or noise amplitudes in the high frequency range. By combining two negative capacitance shunt circuit units, a multi-mode vibration damper is capable of suppressing the whole structure modes simultaneously. In order to describe the characteristic behaviors of a multi-mode vibration damper, the stiffness ratio and loss factor with respect to the non-dimensional frequency are considered. The mechanism of a shunt damper is also described as considering a shunt voltage generated by the shunt impedance.
    Type: Application
    Filed: May 5, 2003
    Publication date: November 13, 2003
    Applicant: Pohang University of Science and Technology Foundation
    Inventor: Chul-Hue Park
  • Patent number: 6645558
    Abstract: Provided is a method for forming solid substrates having high density of primary amine group on its surface, in which the primary amine groups on the surface of an aminosilylated substrate are treated with aziridine or an aziridine derivative. The surface density of the primary amine functional groups (—NH2) on the very top surface of a substrate can be drastically increased.
    Type: Grant
    Filed: November 18, 2002
    Date of Patent: November 11, 2003
    Assignee: Pohang University of Science and Technology Foundation
    Inventors: Joon-Won Park, Hong-Jin Kim
  • Patent number: 6644389
    Abstract: A fin tube heat exchanger includes plate-shaped elongated fin members spaced at regular intervals, in parallel with one another. Each fin member has a fin base, through-holes in two rows in a longitudinal direction of the fin member, and raised portions with legs. Heat exchanger tubes are inserted into the through-holes. Each fin member has flat areas at a front and middle regions of a front half and a middle region of a rear half. The raised portion disposed at a rear region of the front half and a front region of the rear half has the legs inclined by a predetermined angle with respect to a traverse centerline which passes through the center of an adjacent through-hole of the front row. The distance from the centerline generally increases with a direction of airflow. A larger volume of air can be directed toward the vicinity of the tubes of the rear row. Each fin member has a front edge and a rear edge.
    Type: Grant
    Filed: December 17, 2001
    Date of Patent: November 11, 2003
    Assignee: Pohang University of Science and Technology Foundation
    Inventors: Hie-chan Kang, Moo-hwan Kim
  • Patent number: 6639069
    Abstract: Cucurbituril derivatives, their preparation methods and uses.
    Type: Grant
    Filed: March 8, 2002
    Date of Patent: October 28, 2003
    Assignee: Pohang University of Science and Technology
    Inventors: Kimoon Kim, Jaheon Kim, In-Sun Jung, Soo-Young Kim, Eunsung Lee, Jin-Koo Kang
  • Publication number: 20030190764
    Abstract: A gallium nitride (GaN) based optical device and a fabrication method thereof are provided. The GaN based optical device includes a substrate, a p-type GaN (p-GaN) layer formed on the substrate, and a p-type ohmic electrode formed on the p-GaN layer, wherein the p-type ohmic electrode is formed of a triple layer comprised of a nickel (Ni) layer, a gold (Au) layer and an indium tin oxide (ITO) layer sequentially formed. The thicknesses of the Ni layer and the Au layer forming the triple layer are smaller than the thickness of the ITO layer. When the p-type ohmic electrode in the GaN based optical device is formed of a triple layer comprised of Ni/Au/ITO, the Ni/Au layers reduce contact resistance and the ITO, which is a transparent, conductive oxide layer, increases transparency and increases luminescence efficiency.
    Type: Application
    Filed: March 24, 2003
    Publication date: October 9, 2003
    Applicant: Pohang University of Science and Technology Foundation
    Inventors: Jong Lam Lee, Soo Young Kim, Ho Won Jang
  • Publication number: 20030183828
    Abstract: A p-type ohmic electrode in a gallium nitride based(GaN based) optical device and a fabrication method thereof. The p-type ohmic electrode in a GaN based optical device is fabricated using a rutile structure transition metal layer, such as an Ru, Ir or Os layer, or an oxide layer thereof, or using a double layer comprised of an Ru layer as a base layer and an Ni layer, an ITO layer or an AuO layer on the Ru layer. Thus, the p-type ohmic electrode is good in light transmittance and is thermally stable while having low contact resistance with the p-GaN layer.
    Type: Application
    Filed: March 19, 2003
    Publication date: October 2, 2003
    Applicant: Pohang University of Science and Technology Foundation
    Inventors: Jong Lam Lee, Ho Won Jang
  • Publication number: 20030161169
    Abstract: A single-stage converter improving the power factor is provided. The single-stage converter comprises a power factor improving unit, a bridge diode unit, a voltage smoothing condenser, a transformer circuit unit, and a main switch. The power factor improving unit is connected to a predetermined input power source, the bridge diode unit is located next to the power factor improving unit and provides a current path, the voltage smoothing condenser stores electric energy provided through the bridge diode unit, the transformer circuit unit is located between the bridge diode unit and the voltage smoothing condenser, and the main switch is connected to each of the bridge diode unit, the voltage smoothing condenser, and the transformer circuit unit and controls provision of voltage to the transformer circuit unit. Thus, the single-stage converter can improve the power factor of the input terminal.
    Type: Application
    Filed: September 16, 2002
    Publication date: August 28, 2003
    Applicant: Pohang University of Science and Technology Foundation
    Inventor: Bong-hwan Kwon
  • Patent number: 6593760
    Abstract: An apparatus for measuring thermal properties and making thermomechanical modifications on a material surface using a junction of different metallic wires. The junction of different metallic wires, defined as a Peltier tip, is distinguished from a conventional thermocouple by the fact that it works as a point heat source and as a point temperature sensor simultaneously when an electric current flows into the tip. This novel functionality of the Peltier tip offers a way to thermally characterize a material surface with submicron-scale spatial resolution and high sensitivity, while providing high spatial resolution and speed for thermal modifications since both heating and cooling are possible at the Peltier tip.
    Type: Grant
    Filed: May 9, 2001
    Date of Patent: July 15, 2003
    Assignee: Pohang University of Science and Technology Foundation
    Inventors: Yoon-Hee Jeong, Dae-Hwa Jung, Il-Kwon Moon
  • Publication number: 20030107480
    Abstract: A sensor prevents automobile crashes by collecting information such as a distance between automobiles, speed, and acceleration by utilizing a phenomenon that a photonic quantum ring laser emits light rays having different wavelengths associated with varying angles of the radiation from the photonic quantum ring. The sensor for preventing automobile crashes includes a photonic quantum ring laser array for lasing light beams having different wavelengths according to the view angle, a reflection unit for reflecting the light beams oscillated from the photonic quantum ring laser array, and a detection unit for detecting the light beams reflected by the reflection unit.
    Type: Application
    Filed: May 17, 2002
    Publication date: June 12, 2003
    Applicant: Pohang University of Science and Technology Foundation
    Inventors: O?apos;Dae Kwon, Byeong-hoon Park
  • Publication number: 20030080347
    Abstract: A method for manufacturing a hetero-junction field effect transistor (HFET) device, which includes sequentially forming a non-doped GaN semiconductor layer and an AlGaN semiconductor layer on a substrate, separating devices from each other by etching the substrate, forming a photoresist layer pattern on the AlGaN semiconductor layer and forming gate electrodes by depositing a material on the substrate using the photoresist layer pattern, treating the surface of the AlGaN semiconductor layer, and forming a photoresist layer pattern on the substrate and forming ohmic electrodes by depositing a metal on the substrate using the photoresist layer pattern, is provided. Accordingly, it is possible to overcome a difficulty in aligning the gate electrode with the ohmic electrodes and prevent a substrate from having a step difference introduced by the ohmic electrodes because the gate electrode is formed before the ohmic electrodes are formed.
    Type: Application
    Filed: March 22, 2002
    Publication date: May 1, 2003
    Applicant: Pohang University of Science and Technology Foundation
    Inventors: Jong-Lam Lee, Chang Min Jeon, Ho Won Jang
  • Publication number: 20030017077
    Abstract: Provided is a sample clean-up apparatus for removing low-molecular weight substances such as salts from high-molecular weight biological samples such as proteins by simple molecular diffusion in a laminar flow channel and enabling solvent exchange for samples to be suitable for mass spectrometry.
    Type: Application
    Filed: July 16, 2002
    Publication date: January 23, 2003
    Applicant: Pohang University of Science and Technology Foundation
    Inventors: Jong Hoon Hahn, Young Chan Kim, Kyung Won Ro, Nokyoung Park
  • Publication number: 20030017079
    Abstract: A high-efficiency, high-sensitivity absorbance detection system in a lab-on-a-chip is provided. The absorbance detection system includes detection cells having an optical pathlength ten times and/or much longer than the width of a separation channel to improve detection sensitivity, lens structures for collimating light in the detection cells, and slit structures for preventing scattered light from entering detectors. The detection cells, the lens structures, and the slit structures of the absorbance detection system are fabricated and integrated in a lab-on-a-chip. The absorbance detection system exhibits excellent absorption efficiency, detection limit, and linearity, compared to existing absorbance detection systems, and can be applied for the detection of a variety of samples. The absorbance detection system does not need labeling of the samples which saves time and costs. The absorbance detection system can be used effectively in detecting trace compounds with a high sensitivity.
    Type: Application
    Filed: July 18, 2002
    Publication date: January 23, 2003
    Applicant: Pohang University of Science and Technology Foundation
    Inventors: Jong Hoon Hahn, Kyung Won Ro, Bong Chu Shim, Kwanseop Lim
  • Patent number: 6506356
    Abstract: A catalyst for recovering elemental sulfur by the selective oxidation of hydrogen sulfide is represented by the following chemical formula: VaTibXcOf wherein, a is such a mole number that vanadium amounts to 5-40% by weight based on the total weight of the catalyst; b is such a mole number that titanium amounts to 5-40% by weight based on the total weight of the catalyst; X is an element selected from the group consisting of Fe, Mn, Co, Ni, Sb and Bi; c is such a mole number that X amounts to 15% by weight or less based on the total weight of the catalyst; and f is such a mole number that oxygen is contained to the final 100% by weight. The catalyst can recover elemental sulfur at high rates for a long period of time without being deteriorated in activity. The high catalytic activity is maintained even when excess water is present in the reaction gas.
    Type: Grant
    Filed: October 10, 2000
    Date of Patent: January 14, 2003
    Assignees: Envichem Co., Ltd., Pohang University of Science & Technology
    Inventors: Jong Shik Chung, Moon Young Shin
  • Patent number: 6504407
    Abstract: A programmable high speed frequency divider, in which flip-flops for forming a frequency divider which is capable of being programmed with a programmable dividing ratio is simplified increase the speed of the frequency divider. By simplifying the least significant bit flip-flops, including the flip-flop representing the least significant bit, among flip-flops forming a frequency divider, the speed of the counter in the frequency divider is increased and the frequency limit of an input clock which can be divided is raised.
    Type: Grant
    Filed: September 13, 2001
    Date of Patent: January 7, 2003
    Assignee: Pohang University of Science and Technology Foundation
    Inventors: Hong-june Park, Sang-hoon Lee
  • Patent number: 6496065
    Abstract: A linear amplifier using a low frequency 2nd intermodulation feed-forwarding method to offset the 3rd intermodulation component of a fundamental signal is provided. This linear amplifier includes a transistor for amplifying the power of the fundamental signal, a first filter unit, one end of which is connected to the gate of the transistor, for filtering a 2nd order intermodulation signal from the fundamental signal, a low frequency amplifier connected to the other end of the first filter unit, for amplifying the 2nd order intermodulation signal with a predetermined voltage gain, and a second filter unit connected in series between the output port of the low frequency amplifier and the drain output port of the transistor, for filtering the amplified 2nd intermodulation signal and feeding the same to the output port of the transistor.
    Type: Grant
    Filed: October 31, 2000
    Date of Patent: December 17, 2002
    Assignee: Pohang University of Science and Technology Foundation
    Inventors: Bum-man Kim, Youn-goo Yang, Sang-hoon Kang
  • Publication number: 20020163345
    Abstract: A thermal conduction vacuum gauge using a Peltier tip is provided. The vacuum gauge for measuring the pressure in a vacuum chamber includes: a signal generator that drives an electric current; an ammeter connected to the signal generator for measuring the current; a bridge circuit consisting of junctions of thermocouple wires, which is connected to the ammeter, wherein one junction of the dissimilar metallic wires is made in the form of a Peltier tip inserted into the vacuum chamber; and a lock-in amplifier connected to the two symmetrical points of the bridge circuit for detecting a voltage signal due to the temperature oscillation at the Peltier tip and thus measuring the pressure in the vacuum chamber.
    Type: Application
    Filed: November 30, 2001
    Publication date: November 7, 2002
    Applicant: Pohang University of Science and Technology Foundation
    Inventors: Yoon-Hee Jeong, Dae-Hwa Jung, Suk-Min Chung, Chong-Do Park
  • Patent number: 6473985
    Abstract: A remote center compliance system having a variable center, an upper plate, a lower plate, and elastic bodies installed between the upper and lower plates, includes lower rotary plates, each having a rotation axis parallel to a center axis passing the center of the lower plate and the center of the upper plate, coupled to a lower end of each of the elastic bodies and coupled to the lower plate for rotating, and upper rotary plates, each being coupled to an upper end of each of the elastic bodies and concurrently coupled to the upper plate for rotating about the rotation axis of the lower rotary plate. A center axis of each of the elastic bodies is inclined with respect to the rotation axis of the lower rotary plate to which each of the elastic bodies is coupled. Thus, when parts having different lengths are to be assembled, the assembly of the parts can be easily performed only by rotating the rotary plates and the elastic bodies without changing the RCA system to cope with various lengths of the parts.
    Type: Grant
    Filed: January 12, 2001
    Date of Patent: November 5, 2002
    Assignee: Pohang University of Science and Technology Foundation
    Inventors: Sang-cheol Won, Sang-cheol Lee
  • Publication number: 20020133003
    Abstract: Cucurbituril derivatives, their prepartion methods and uses.
    Type: Application
    Filed: March 8, 2002
    Publication date: September 19, 2002
    Applicant: Pohang University of Science and Technology
    Inventors: Kimoon Kim, Jaheon Kim, In-Sun Jung, Soo-Young Kim, Eunsung Lee, Jin-Koo Kang
  • Patent number: 6451130
    Abstract: A method for forming a chromium oxide film on the surface of a stainless steel sample. The method includes: (a) placing a sample having stainless a steel surface into a vacuum furnace, evacuating the vacuum furnace to a pressure of 2×10−7 to 3×10−7 Torr, and heating the vacuum furnace to 450 to 600° C. at a rate of 5 to 10° C./min; (b) maintaining the vacuum furnace for 10 to 20 minutes at a temperature of 450 to 600° C. to remove foreign materials from the surface of the stainless steel sample and to extract chromium atoms from the stainless steel substrate; and (c) supplying oxygen to the vacuum furnace while maintaining the temperature until oxygen partial pressure reaches 1×10−9 to 2.5×10−7 Torr, so the extracted chromium atoms react with oxygen, producing a chromium oxide (Cr2O3) film on the surface of the stainless steel.
    Type: Grant
    Filed: June 29, 2000
    Date of Patent: September 17, 2002
    Assignee: Pohang University of Science and Technology Foundation
    Inventors: Suk-min Chung, Bok-lae Cho
  • Patent number: 6365734
    Abstract: Cucurbituril derivatives, their preparation methods and uses.
    Type: Grant
    Filed: June 28, 2000
    Date of Patent: April 2, 2002
    Assignee: Pohang University of Science and Technology Foundation
    Inventors: Kimoon Kim, Jaheon Kim, In-Sun Jung, Soo-Young Kim, Eunsung Lee, Jin-Koo Kang