Abstract: A surface-mountable over-current protection device comprises one PTC material layer, first and second connecting conductors, first and second electrodes and an insulating layer. The PTC material layer has a resistivity less than 0.2 ?-cm, and comprises crystalline polymer and conductive filler dispersed therein. The first and second connecting conductors are capable of effectively dissipating heat generated from the PTC material layer. The first and second electrodes are electrically connected to first and second surfaces of the PTC material layer through the first and second connecting conductors, respectively. The dissipation factor depending on the ratio of the total area of the electrodes and the conductors to the area of the PTC material layer is greater than 0.6. At 25° C., the value of the hold current of the device divided by the product of the area of the PTC material layer and the number of the PTC material layer is greater than 1A/mm2.

Abstract: An over-current protection device comprises two metal foils, a positive temperature coefficient (PTC) material layer and a packaging material layer. The PTC material layer is sandwiched between the two metal foils and has a volume resistivity below 0.1 ?-cm. The PTC material layer includes (i) plural crystalline polymers having at least one crystalline polymer with a melting point less than 115° C.; (ii) an electrically conductive nickel filler having a volume resistivity less than 500 ??-cm; and (iii) a non-conductive metal nitride filler. The electrically conductive nickel filler and non-conductive metal nitride filler are dispersed in the crystalline polymer. The packaging material layer which encapsulates the chip is essentially comprised of the PTC layer and the two metal foils. The packaging material layer is formed by reacting epoxy resin with a hardener having amide functional group.

Abstract: An over-current protection device comprises two metal foils and a positive temperature coefficient (PTC) material layer. The PTC material layer is sandwiched between the two metal foils and has a volume resistivity below 0.1 ?-cm. The PTC material layer includes (i) plural crystalline polymers having at least one crystalline polymer of a melting point less than 115° C.; (ii) an electrically conductive nickel filler having a volume resistivity less than 500 ??-cm; and (iii) a non-conductive metal nitride filler. The electrically conductive nickel filler and non-conductive metal nitride filler are dispersed in the crystalline polymer.

Abstract: A heat-conductive dielectric polymer material having an inter-penetrating-network (IPN) structure includes a polymer component, a curing agent, and a heat-conductive filler uniformly dispersed in the polymer component. The polymer component includes a thermoplastic plastic and a thermosetting epoxy resin. The curing agent is used to cure the thermosetting epoxy resin at a curing temperature. The heat conductivity of the heat-conductive dielectric polymer material is larger than 0.5 W/mK. A heat dissipation substrate including the heat-conductive dielectric polymer material in the present invention has a thickness of less than 0.5 mm and bears a voltage of over 1000 volts.

Abstract: An over-current and over-voltage protection assembly apparatus including an over-current protection (OCP) device and an over-voltage protection (OVP) device is provided. One end of the OCP device is electrically connected to a first connection point, and the other end is electrically connected to a second connection point. One end of the OVP device is electrically connected to a third connection point, and the other end is electrically connected to the second connection point. The second connection point is a common point. The OCP device and the OVP device are modularized and integrated to an assembly. The first, second, and third connection points are connected to an external circuit to be protected, such that the OCP device is connected in series to the circuit to be protected, and the OVP device is connected in parallel to the circuit to be protected.

Abstract: A method for manufacturing an over-current protection device comprises a step of providing at least one current sensitive device and a step of pressing. The current sensitive device comprises a first electrode foil, a second electrode foil and a PTC conductive layer physically laminated between the first and second electrode foils. The pressing step is to press the current sensitive device at a predetermined temperature, thereby generating at least one overflow portion at sides of the PTC conductive layer to form the over-current protection device. The predetermined temperature is higher than the softening temperature of the PTC conductive layer. The over-current protection devices manufactured according to the present invention have superior resistance distribution.

Abstract: The over-current protection device of the present invention can be used for over-current protection to PCM. The over-current protection device comprises a PTC device, at least one insulation layer; at least one electrode layer and at least one conductive channel. The insulation layer is placed on a surface of the PTC device, and the electrode layer is formed on the insulation layer afterwards. As a result, the insulation layer is between the electrode layer and the PTC device. The electrode layer serves as a surface of the over-current protection device. The conductive channel electrically connects the PTC device and the electrode layer. In an embodiment, the conductive channel is a blind hole penetrating through the electrode layer and the insulation layer and ending at the surface of the PTC device, and the surface of the blind hole is coated with a conductive layer to electrically connect the PTC device and the electrode layer.

Abstract: A variable impedance composition according to one aspect of the present invention comprises a high electro-magnetic permeability powder in an amount from 10% to 85% of the weight of the variable impedance composition, and an insulation adhesive in an amount from 10% to 30% of the weight of the variable impedance composition. The incorporation of high electro-magnetic permeability powder including carbonyl metal, such as carbonyl iron or carbonyl nickel, in the variable impedance composition can not only suppress the overstress voltage, but also dampen the transient current. In contrast to the conventional electrostatic discharge (ESD) device, the relatively high electro-magnetic permeability carbonyl metal powder can reduce arcing as well as lower the trigger voltage of the device. The high electro-magnetic permeability characteristics can also absorb the undesirable electro-magnetic radiation that causes corruption of signal and loss of data.

Abstract: A variable impedance composition according to one aspect of the present invention comprises a high electro-magnetic permeability powder in an amount from 10% to 85% of the weight of the variable impedance composition, and an insulation adhesive in an amount from 10% to 30% of the weight of the variable impedance composition. The incorporation of high electro-magnetic permeability powder including carbonyl metal, such as carbonyl iron or carbonyl nickel, in the variable impedance composition can not only suppress the overstress voltage, but also dampen the transient current. In contrast to the conventional electrostatic discharge (ESD) device, the relatively high electro-magnetic permeability carbonyl metal powder can reduce arcing as well as lower the trigger voltage of the device. The high electro-magnetic permeability characteristics can also absorb the undesirable electro-magnetic radiation that causes corruption of signal and loss of data.

Abstract: An over-voltage protection device comprises a substrate having a first surface and a second surface, a first nonrectangular conductor having a first protrusion positioned on the first surface of the substrate, a second nonrectangular conductor having a second protrusion positioned on the first surface of substrate, at least one alignment block positioned on the second surface, and a variable impedance material positioned between the first protrusion and the second protrusion. Preferably, the second protrusion faces the first protrusion to form an arcing path from the first protrusion to the second protrusion.

Abstract: A variable impedance composition according to this aspect of the present invention comprises a conductive powder in an amount from 10% to 30% of the weight of the variable impedance composition, a semi-conductive power in an amount from 30% to 90% of the weight of the variable impedance composition, and an insulation adhesive in an amount from 3% to 50% of the weight of the variable impedance composition. According to one embodiment of the present invention, the variable impedance material presents a high resistance at a low applied voltage and a low resistance at a high applied voltage. As the variable impedance material is positioned in a gap between two conductors of an over-voltage protection device, the over-voltage protection device as a whole presents a high resistance to a low voltage applied across the gap and a low resistance to a high voltage applied across the gap.

Abstract: A method for manufacturing an over-current protection device comprises a step of providing at least one current sensitive device and a step of pressing. The current sensitive device comprises a first electrode foil, a second electrode foil and a PTC conductive layer physically laminated between the first and second electrode foils. The pressing step is to press the current sensitive device at a predetermined temperature, thereby generating at least one overflow portion at sides of the PTC conductive layer to form the over-current protection device. The predetermined temperature is higher than the softening temperature of the PTC conductive layer. The over-current protection devices manufactured according to the present invention have superior resistance distribution.

Abstract: A heat dissipation material comprises (1) fluorine-containing crystalline polymer having a melting point higher than 150° C., with a weight percentage of around 15-40%; (2) heat conductive fillers dispersed in the fluorine-containing crystalline polymer with a weight percentage of around 60-85%; and (3) coupling agent of 0.5-3% of the heat conductive fillers by weight and having a chemical formula of: where R1, R2 and R3 are alkyl group CaH2a+1, a?1; X and Y are selected from hydrogen, fluorine, chorine, and alkyl group; and n is a positive integer.

Abstract: An LED apparatus comprises a base, an LED device, an electrode member and an insulation layer. The base has a bevel side to be embedded with a corresponding receiving base for electrical conduction of an electrode (e.g., a negative electrode). The LED device is placed on an upper surface of the base. The electrode member comprising a metal rod and an electrode plate is connected to the LED device for electrical conduction of an electrode (e.g., a positive electrode). The insulation layer is placed between the electrode plate of the electrode member and the base for electrical insulation. The bevel side of the base can be modified as desired, and is generally less than 10 degrees, and preferably less than 5 degrees, and may be less than 3 degrees if needed.

Abstract: The over-current protection device of the present invention can be used for over-current protection to PCM. The over-current protection device comprises a PTC device, at least one insulation layer; at least one electrode layer and at least one conductive channel. The insulation layer is placed on a surface of the PTC device, and the electrode layer is formed on the insulation layer afterwards. As a result, the insulation layer is between the electrode layer and the PTC device. The electrode layer serves as a surface of the over-current protection device. The conductive channel electrically connects the PTC device and the electrode layer. In an embodiment, the conductive channel is a blind hole penetrating through the electrode layer and the insulation layer and ending at the surface of the PTC device, and the surface of the blind hole is coated with a conductive layer to electrically connect the PTC device and the electrode layer.

Abstract: A high-power LED lamp comprises a cuplike lamp housing, an LED device, an adapter and a circuit board. The inner surface of the cuplike lamp housing is a reflective curved surface for reflecting the light from the LED device disposed at the bottom the cuplike lamp housing, so as to improve the lighting efficiency. The position of the LED device has the relation: 0.05<HL/HT<0.35, where HT is the total depth of the cuplike lamp housing, HL is the distance between a surface of the LED device and the bottom of the cuplike lamp housing. The adapter is configured to secure the LED device, and the circuit board is configured to provide power source to the LED device. The LED device is a stack structure comprising an LED package device, a ring member, an electrode plate and an insulation glue layer.

Abstract: A high voltage over-current protection device includes a positive temperature coefficient (PTC) electrically conductive heat-dissipation layer and two metal electrodes. The PTC electrically conductive heat-dissipation layer includes at least one polymer, an electrically conductive filler, and a heat conductive filler. Due to the high thermal conductivity of the heat conductive filler (with a coefficient of thermal conductivity higher than 1 W/mK), the high voltage over-current protection device has a high thermal conduction characteristic, and the withstand voltage thereof can be substantially uniformly distributed in the PTC electrically conductive heat-dissipation layer to enhance its high voltage withstanding characteristic.

Abstract: An over-current protection device comprises two metal foils and a PTC material layer laminated between the two metal foils. The PTC material layer essentially comprises a polymer matrix and a conductive filler. The polymer matrix at least comprises a first crystalline polymer, e.g., LDPE, and a second crystalline polymer, e.g., PVDF, in which the melting temperature of the second crystalline polymer subtracting the melting temperature of the first crystalline polymer is equal to or more than 50° C. The conductive filler is selected from metallic grain of a volumetric resistivity less than 500 ??-cm, and is distributed in the polymer matrix. The initial volumetric resistivity of the PTC material layer is less than 0.1?-cm, and the trip temperature of the PTC material layer at which the resistance thereof increases to 1000 times the initial resistance subtracting the melting temperature of the first crystalline polymer is less than 15° C.

Abstract: A method for manufacturing a circular electrode apparatus of a battery for resistance stability improvement comprises the following procedures. First, an electrode structure of a battery including an upper electrode plate, an over-current protection device and lower electrode plate is provided, wherein the over-current protection device is a lamination constituted of an upper metal foil, a current-sensitive layer and a lower metal foil. Secondly, the electrode structure is treated by high-speed impact, vibration, hot-cold impact, acid pickling, water pickling or sand blasting to become the electrode apparatus of the present invention whereby the mean value of the resistance of the electrode apparatuses is below 0.05 ohm, and the deviation of the resistances of the electrode apparatuses is below 0.005 ohm at 25° C.

Abstract: An over-current protection device comprises two metal foils and a positive temperature coefficient (PTC) material layer laminated between the two metal foils. The PTC material layer includes: (1) a polymer substrate, being 35-60% by volume of the PTC material layer and including a fluorine-containing crystalline polymer with a melting point higher than 150° C., e.g., polyvinylidine fluoride (PVDF); and (2) a conductive ceramic filler (e.g., titanium carbide) distributed in the polymer substrate. The conductive ceramic filler is 40-65% by volume of the PTC material layer, and has a volume resistivity less than 500 ??-cm. The volume resistivity of the PTC material layer is less than 0.1 ?-cm, and the ratio of the hold current of the PTC material layer at 25° C. to the area of the PTC material layer is between 0.05 and 0.2 A/mm2.