Abstract: A method is provided for forming clad hollow cathode magnetron sputter targets that are lighter in weight and/or less expensive than monolithic targets. A plate of sputter target material is bonded to a sheet of cladding material that is lighter in weight and/or less expensive than the sputter target material. This clad target assembly is then formed into a hollow cathode magnetron sputter target, such as by deep drawing. The clad hollow cathode magnetron further provides greater percent utilization of sputter target material than monolithic targets.

Abstract: A method for determining actual size of internal target defects by ultrasonic inspection is provided in which the amplitude of signals generated by ultrasonic inspection are compared to metallurgical size measurements obtained through the use of optical microscopes or scanning electron microscopes or scanning election microscopes. From this comparison, a correlation factor may be obtained to determine the accuracy of the ultrasonic measurements. For a particular sputter target material, defect sizes obtained by ultrasonic inspection may then be multiplied by the correlation factor to determine the actual defect size for that defect. The use of actual defect sizes to determine defect sizes from ultrasonic inspection provides a more accurate determination of defect sizes than prior methods and provides a reliable means for accepting or rejecting targets for critical circuit manufacturing operations.

Abstract: A hybrid slurry mixture that polishes substrates' surfaces. The hybrid slurry includes, by weight percent, 1 to 30 primary polishing particles, 1 to 50 dispersed colloidal particles, 1 to 40 oxidizer and balance water. The primary polishing particles are metal compounds selected from the group consisting of oxides, nitrides, carbides and borides. The primary polishing particles have a particle size from about 0.1 to 2 &mgr;m mean diameter. The dispersed colloidal particles are at least one oxide selected from the group consisting of alumina and silica. The dispersed colloidal particles have a particle size from about 2 to 500 nm mean diameter.

Abstract: The invention relates to a process for producing anodic coatings with superior corrosion resistance and other properties on aluminum and aluminum alloy surfaces by cryogenically treating the aluminum prior to anodizing. The invention also relates to the anodic coatings and to the anodically coated articles produced by the process. The anodized coating has a thickness of 0.001 to 0.5 mm and a time to penetration of at least 5 hours for aqueous solutions of HCl.

Abstract: A thermally sprayed coating formed with a quasicrystal-containing alloy, the alloy consisting essentially of, by weight percent, 10 to 45 Cu, 7 to 22 Fe, 0 to 30 Cr, 0 to 30 Co, 0 to 20 Ni, 0 to 10 Mo, 0 to 7.5 W and balance aluminum with incidental impurities. The alloy contains at least 50 weight percent &psgr; phase. The coating has a macro hardness of at least HR15N 75.

Abstract: A thermally sprayed coating formed with a quasicrystal-containing alloy, the alloy consisting essentially of, by weight percent, 10 to 45 Cu, about 7 to 22 Fe, 0 to 30 Cr, 0 to 30 Co, 0 to 20 Ni, 0 to 10 Mo, 0 to 7.5 W and balance aluminum with incidental impurities. The alloy contains less than 30 weight percent &psgr; phase and at least 65 weight percent &dgr; phase. The coating has a macrohardness of less than HR15Y 90.

Abstract: A planar ferromagnetic sputter target is provided for use as cathode in the magnetron sputtering of magnetic thin films, wherein the ferromagnetic material has localized regions of differing magnetic permeability. A solid, unitary, planar sputter target is formed from a ferromagnetic material, such as cobalt, nickel, iron or an alloy thereof, and this planar target is subjected to mechanical deformation, heat treatment, and/or thermal-mechanical treatment to create regions within the sputter target having different permeability than adjacent regions. The permeability differences in the ferromagnetic sputter target guides the path of the magnetic flux flow through the target to thereby increase the magnetic leakage flux at the target sputtering surface.

Abstract: A method of forming a sputter target/backing plate assembly comprises the steps of: providing a target fabricated from a first material having a coefficient of thermal expansion; providing a backing plate fabricated from a second material having a coefficient of thermal expansion; providing a block fabricated from a third material having a coefficient of thermal expansion; positioning the block on one side of the backing plate; positioning the target on the other side of the backing plate; and subjecting the target, backing plate and block to elevated temperature and pressure to bond the target, backing plate and block together. The third material is selected so as to have a coefficient of thermal expansion which counteracts the effects of the coefficients of thermal expansion of the first and second materials. The third material may be selected so as to have a coefficient of thermal expansion which is approximately the same as the coefficient of thermal expansion of the first material.

Abstract: The present invention provides a high purity cobalt sputter target having a single phase h.c.p. structure and a magnetic permeability less than the intrinsic magnetic permeability of the material. Substantially pure cobalt is cast and slowly cooled, such as at a rate of 15° C./min. Or less, to form a cast target of single phase h.c.p. crystallographic structure. This cast target is hot worked at a temperature of at least about 1000° C. to impart a strain of about 65% or greater into the cobalt material, followed by a slow, controlled cooling to room temperature, such as at a rate of 15° C./min. or less, to maintain the single phase h.c.p. crystallographic structure. The cooled target is then cold worked at substantially room temperature to impart a strain of about 5-20%. The sputter target of the present invention processed by this method has a magnetic permeability of less than about 9, grain sizes in the size range of about 70-160 &mgr;m, and average grain size of about 130 &mgr;m.

Abstract: An automated heat treatment controller consistently controls heat treating a metallic target in a furnace according to a heat treatment recipe including a cycle temperature and a cycle exposure time. The automated heat treatment controller includes an operator interface for prompting an operator to load or remove a heat treated target. The controller further provides for commanding furnace door locks and for monitoring system performance. An automated heat treatment furnace method includes the steps of pre-heating the furnace, prompting the user to load the material, reheating the furnace to heat treatment parameters, controlling the exposure time and temperature, and prompting the removal of the material.

Abstract: There is provided a method of forming a high strength atomic bond between a sputter target and backing plate such that the microstructural characteristics of the sputter target material obtained by prior processing is not altered by the bonding process. There is further provided a method for bonding the target to the backing plate and forming a bonded target/backing plate assembly having a greater target thickness for increased sputtering life, while maintaining the overall standard dimensions set by industry standards.

Abstract: There is provided a method for fabricating high density sputter targets by pre-packing a powder bed by hot pressing or vibration between metal plates, followed by hot isostatic pressing. This method is especially suitable for preparing sputter targets with a radius to thickness ratio of at least 3 and a density of at least 96% of theoretical.

Abstract: The invention provides a mixture for polishing surfaces. The mixture includes polishing particles having an average size of less than 10 .mu.m and water. It also includes an accelerator for chemically attacking a surface and a starch for reducing vibration of polishing machines.

Abstract: A method of preparing and testing bond interface evaluation samples is provided for evaluating the strength of bonds between two metal components, such as the bond in a sputter target/backing plate assembly. A sample of the bond interface of the composite material is removed, a through hole is formed at one end, and the bond interface is removed in the area of the hole, thereby splitting the hole into two holes. The holes are grasped, such as by tapping the holes and inserting threaded rods therein, and the composite layers are pulled apart by applying oppositely directed forces to the rods. The strength of the bond, and not the component materials, is thereby evaluated.

Abstract: A reusable aluminum sputter target support tube which is bonded to a replaceable sputter target by variable polarity plasma arc welding and a method of manufacturing such reusable sputtering target assemblies.

Abstract: A contoured sputtering target includes a target member of sputtering material having a top surface, a bottom surface and an outer peripheral surface. One or more contoured annular regions are formed on the top surface of the target member that extend radially inwardly from the outer peripheral surface and away from the bottom surface. The target member may further include planar, concave or central recessed regions formed in the top surface that are surrounded by the one or more contoured annular regions. The configuration of the target member reduces generation of contaminating particles from nodules that may form near the outer peripheral surface of the target during a sputtering operation. Methods of forming a contoured sputtering target are also disclosed.

Abstract: This invention is directed to an improved bonded sputter target/backing plate assembly and a method of making these assemblies. The assembly includes a sputter target having side and bottom bonding surfaces bonded within a recess in an underlying backing plate, the recess having top and side bonding surfaces. The method of forming the bonded assembly includes treating the bonding surfaces of either the sputter target or backing plate recess by roughening at least a portion of the bonding surfaces so as to produce a roughened portion having a surface roughness (R.sub.a) of at least about 120 micro-inches. The method further includes orienting the sputter target within the backing plate recess to form one assembly having a parallel interface defined by the top and bottom bonding surfaces and a side interface defined by the side bonding surfaces, subjecting the assembly to a controlled atmosphere, heating the assembly, and pressing the assembly so as to bond the bonding surfaces.

Abstract: Sputtering targets are cryogenically annealed to provide a uniformly dense molecular structure by placing the target in a temperature-controlled cryogenic chamber and cooling the chamber to a cryogenic temperature at a controlled rate. The target is maintained at a cryogenic temperature to cryogenically anneal the target and the target is subsequently returned to ambient or elevated temperature. Improvements in sputtered particle performance and early life film uniformity are achieved with the cryo-annealed targets.

Abstract: A high purity titanium polycrystalline target with uniform grain size and near ideal (103) crystallographic orientation and a method of making. Uniform grain size from 10 .mu.m-500 .mu.m is achieved by using a fine grain five inch diameter titanium billet produced by hot working an electron beam cast billet. Greater than 80% (103) crystallographic orientation is achieved while maintaining uniform and optimal grain size in the target. The result is a higher collimated deposition rate with increased efficiency of bottom coverage of vias and a highly (002) oriented titanium film.

Abstract: A wear resistant coating for journals, journal sleeves and bushings on submerged rolls in a molten metal coating bath, comprising a laser-melted tungsten carbide containing overlay.