Patents Assigned to Precision Instrument Development Center
  • Publication number: 20010044164
    Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.
    Type: Application
    Filed: June 20, 2001
    Publication date: November 22, 2001
    Applicant: Precision Instrument Development Center
    Inventors: Cheng-Chung Jaing, Jyh-Shin Chen, Jen-Inn Chyi, Jeng-Jiing Sheu
  • Patent number: 6309895
    Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.
    Type: Grant
    Filed: January 27, 1999
    Date of Patent: October 30, 2001
    Assignee: Precision Instrument Development Center, National Science Council
    Inventors: Cheng-Chung Jaing, Jyh-Shin Chen, Jen-Inn Chyi, Jeng-Jiing Sheu
  • Patent number: 6302641
    Abstract: A multiple-type vacuum pump has a simple construction and superior durability. The multiple-type vacuum pump has the capacity to perform air evacuation at high velocities in the low to high vacuum zone range. The multiple-type vacuum pump includes: a screw type pump air transfer portion arranged at a downstream portion of the outer surface of a rotor and has a plurality of screw threads and screw grooves with a width of 5 mm or more; a turbo-molecular type pump air transfer portion arranged at an upstream portion and has a plurality of vanes and air transfer grooves; vanes having vane widths of 3 mm or less at the upstream edge, and formed so that the downstream edge is continuous with the upstream edge of the screw threads; a downstream edge of the base of the air transfer grooves formed so as to be continuous with the upstream edge of the base of the screw grooves.
    Type: Grant
    Filed: January 7, 2000
    Date of Patent: October 16, 2001
    Assignees: Kashiyama Kougyou Industry Co., Ltd., Precision Instrument Development Center National Science Council
    Inventors: Matsumi Iwane, Rong-Yuan Jou
  • Publication number: 20010029053
    Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.
    Type: Application
    Filed: June 20, 2001
    Publication date: October 11, 2001
    Applicant: Precision Instrument Development Center, National Science Council
    Inventors: Cheng-Chung Jaing, Jyh-Shin Chen, Jen-Inn Chyi, Jeng-Jiing Sheu
  • Patent number: 6057620
    Abstract: This invention provides a geometrical structure configuration of maglev forces in a maglev rotational bearing apparatus. The bearing apparatus uses the magnetic forces as the suspension support for the rotational shaft, and utilizes a radial maglev support module to provide two maglev constraint forces perpendicular to and crossing on the axis of rotating shaft and an axial maglev support module to provide three maglev constraint forces parallel to the axis but non-coplanar. From the viewpoint of kinematical geometry, this machine has five linearly independent constraint forces so that the main axis is allowed to be suspended without contact and friction with static elements, and the suspension force in axial direction is better than currently available maglev bearings. The rotational shaft can be driven by a motor to perform high-speed rotational motion with noises free and vibrations free.
    Type: Grant
    Filed: April 28, 1999
    Date of Patent: May 2, 2000
    Assignees: Precision Instrument Development Center, National Science Council of Republic of China
    Inventors: Fong-Zhi Chen, Rong-Yuan Jou, Hong-Ping Cheng, Yu-Wen Chang, Jin-Shyang Lin