Abstract: One embodiment of the present invention is a smoothing pad for bare semiconductor wafers the smoothing pad for bare semiconductor wafers. The smoothing pad comprises a smoothing body having a closed-cell thermoplastic foam comprising an ethylene vinyl acetate block copolymer comprising a vinyl acetate content ranging from about 1 to about 18 wt %. The smoothing body is substantially free of particles having an average size of greater than about 1 micron. Other aspects of the invention comprise a method of preparing a bare semiconductor wafer and a method of manufacturing a pad for smoothing bare semiconductor wafers.

Abstract: The present invention is directed, in general, to a chemical mechanical polishing pad comprising a closed-cell thermoplastic foam polishing body. The polishing body comprises an ethylene vinyl acetate block copolymer. The ethylene vinyl acetate block copolymer comprises a vinyl acetate content ranging from about 1 to about 18 wt %. The closed-cell thermoplastic foam polishing body also comprises filler particles comprising an average size ranging from about 1 to about 20 microns. Other aspects of the invention comprise a method for manufacturing the above-described chemical mechanical polishing pad and chemical mechanical polishing apparatus comprising the chemical mechanical polishing pad.

Abstract: The present invention is directed, in general, to a polishing pad comprising a polishing body. The polishing body comprises a thermoplastic foam substrate having a surface comprising concave cells. The thermoplastic foam substrate comprises a blend of cross-linked ethylene vinyl acetate copolymer and polyethylene. The thermoplastic foam substrate has a hardness ranging from about 24 Shore A to about 100 Shore A. Other embodiments include a method for preparing the polishing pad, a polishing apparatus that includes the polishing pad, and a method of polishing a semiconductor substrate using the polishing pad.

Abstract: The present invention provides a method for predicting a performance characteristic of a chemical mechanical polishing (CMP) pad. The method comprises providing a CMP pad having a polishing surface and measuring a frictional property of the polishing surface. The method further includes estimating a performance characteristic of the CMP pad based on the frictional property. Other aspects of the present invention include a quality control system for monitoring chemical mechanical polishing pad performance.

Abstract: The present invention provides in one embodiment, a polishing pad 100 for chemical mechanical polishing. The polishing pad comprises a polishing body 110. The polishing body comprises a thermoplastic foam substrate 115 having a surface 120 comprising concave cells 125. A polishing agent 130 coats an interior surface 135 of the concave cells. The polishing agent comprises an inorganic metal oxide that includes carbides or nitrides. Yet another embodiment of the present invention is a method for preparing a polishing pad 200.

Abstract: The present invention is directed, in general, to packaged polishing pads for chemical mechanical polishing of semiconductor wafers and integrated circuits. More specifically, the invention is directed to a method of preparing and packing the pad and the packaging therefor. Prior to placing the pad on a platen and polishing with the pad, a polishing pad having an hygroscopic absorbency is soaked with an aqueous media for a time sufficient to equilibrate the pad. The pad maybe packaged by placement in a sealable moisture tight package after soaking or before soaking along with a sufficient quantity of aqueous media to allow the pad to equilibrate.

Abstract: The present invention is directed, in general, to a polymer with altered properties to make the pad more suitable for use in customized semiconductor, in particular, shallow trench isolation chemical mechanical polishing applications. A method of preparing such polymers comprises exposing a plastic substrate to a supercritical fluid containing a precursor. By virtue of the reactive environment provided by the supercritical fluid, the precursor is grafted throughout the plastic, thereby changing its bulk properties. A wide variety of grafted compounds, including inorganic, wetability and inorganic-organic compounds, may thus be incorporated into the plastic to form a new polymer endowed with new set of favorable polishing properties.