Abstract: The present invention is directed, in general, to polishing pads for chemical mechanical polishing of semiconductor wafers and integrated circuits. More specifically, the invention is directed to polishing pads containing a precursor slurry modifier. In the presence of a polishing slurry during chemical mechanical polishing, the precursor is released to the polishing slurry to form a slurry modifier thereby improving polishing.
Abstract: The present invention is directed, in general, to a method of planarizing a surface on a semiconductor wafer and, more specifically, to a method of altering the properties of polishing pads to improve thermal management during chemical-mechanical planarization, the resulting heat conductive pad and a polishing apparatus that includes the pad. The pad includes a polishing body composed of a thermoconductive polymer comprising an substrate and filler particle containing a Group II salt and within the substrate.