Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substrate at the treating space; and a gas supply unit configured to supply a gas which is excited to a plasma to the treating space, and wherein the support unit includes: a chuck supporting a center region of the substrate; and an edge electrode formed in a ring shape, and wherein the edge electrode includes: a body portion surrounding the chuck at an outer side of the chuck; and a protrusion portion formed protruding to an outer side of the body portion, and a hole is formed at the protrusion portion penetrating the protrusion portion and which exhausts an atmosphere of the treating space.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substate within the treating space; and a plasma source for generating a plasma by exciting a gas supplied to the treating space, and wherein the support unit includes: a chuck having the substrate mounted to a top surface thereof; and a ring member in a ring shape surrounding an outer side of the chuck, and the ring member includes a cut surface which divides the ring member and a holding member positioned at the cut surface which holds a position of the ring member which is divided by the cut surface.

Abstract: Embodiments of the inventive concept provide a substrate processing apparatus. The substrate treating apparatus comprises a process treating unit providing a treating space performed treating the substrate; a plasma generating unit generating the plasma discharging a process gas, and supplying the plasma to the treating space. The plasma generating unit provides a plasma chamber having a generating space of the plasma; an antenna wound to surround the plasma chamber outside the plasma chamber; a first coating film covering inside walls of the plasma chamber and comprising yttrium fluoride (YF3).

Abstract: The inventive concept relates to an apparatus for processing a substrate. In an embodiment, the apparatus for processing the substrate includes a plasma chamber, a coil electrode installed around the plasma chamber, and a Faraday shield provided between the coil electrode and the plasma chamber. The Faraday shield includes a cutout having a plurality of slots formed in a vertical direction along a periphery of the plasma chamber, an upper rim provided at the top of the cutout, and a lower rim provided at the bottom of the cutout. The upper rim and the lower rim have a thermal expansion reduction means configured to reduce a difference in thermal deformation between the upper and the lower rim and the cutout.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a chuck supporting a substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate supported on the chuck, and an edge electrode provided to surround the substrate supported on the chuck when viewed from above and to generate plasma from the gas, wherein the edge electrode has a ring shape and a groove recessed in a direction from an inner periphery of the edge electrode to an outer periphery of the edge electrode when viewed from above is formed in the edge electrode.

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.

Abstract: Provided is a substrate processing apparatus including: a chuck configured to support a substrate; a dielectric plate disposed to face an upper surface of the substrate supported by the chuck; a gas supply unit configured to supply process gas to an edge region of the substrate; and a first edge electrode configured to generate plasma from the process gas to the edge region of the substrate supported by the chuck, in which the first edge electrode includes: a plurality of electrode units; and one or more insulating units provided between the electrode units.

Abstract: An apparatus for processing a substrate includes a housing having a processing space therein, a transfer robot that loads the substrate into the processing space or unloads the substrate from the processing space, a support unit including a chuck that supports the substrate in the processing space and a lift pin that moves the substrate in an up-down direction, a dielectric plate having a lower surface disposed to face an upper surface of the chuck, and a gap measurement unit that measures a gap between the dielectric plate and the substrate supported by the lift pin or a gap between the dielectric plate and the chuck.

Abstract: An apparatus for processing a substrate is provided. The apparatus for processing the substrate includes a housing having a process space, a gas supply unit to supply gas into the process space, a support unit including a chuck to support the substrate in the process space and a lower electrode to surround the chuck when viewed from a top, a temperature adjusting plate provided in the housing, a dielectric plate unit coupled to the temperature adjusting plate, and having a dielectric plate disposed in opposite to the substrate supported by the support unit in the process space, and an upper electrode unit coupled to the temperature adjusting plate, and having an upper electrode disposed in opposition to the lower electrode. The dielectric plate unit includes a first base disposed between the dielectric plate and the temperature adjusting plate.

Abstract: The inventive concept relates to an apparatus for processing a substrate. The substrate processing apparatus includes a scatter that is disposed over a baffle and that separates plasma and impurities. The scatter includes a plate having a first opening formed in a central area thereof when viewed from above and a collision block that is disposed over the first opening to face the first opening and that collides with plasma supplied from a plasma generation unit and impurities.

Abstract: Disclosed is a substrate processing apparatus that includes an interference member for minimizing a collision between a descending flow of gas supplied by a fan unit and a gas flow directed toward a transfer space from the inside of a container.

Abstract: Disclosed are a substrate treating apparatus, a substrate treating method, and a plasma generating unit. The substrate treating apparatus includes a housing configured to provide a treatment space, in which a substrate is treated, a support unit configured to support a substrate in the treatment space, a plasma generating unit disposed outside the housing and configured to excite plasma from a gas and supply the excited plasma to the treatment space, and a controller, wherein the plasma generating unit includes a plasma generating chamber having a space, into which a gas is introduced, a first antenna wound to surround the plasma generating chamber and connected to a power source through an electric wire, a second antenna wound around the plasma generating chamber and connected to the power source through an auxiliary electric wire, and a switch configured to switch on and off the auxiliary electric wire.

Abstract: Provided are a plasma generating apparatus using mutual inductive coupling and a substrate treating apparatus including the same. According to an embodiment of the present invention, a plasma generating apparatus includes: an RF power supply providing an RF signal; a plurality of electromagnetic field applying units inducing an electromagnetic field by receiving the RF signal; and a reactance element connected to a ground terminal of the electromagnetic field applying unit, wherein each of the electromagnetic field applying units may include a plurality of mutually-inductively coupled coils.

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a process chamber, a substrate support unit configured to support a substrate in the process chamber, a gas supply unit configured to supply a process gas into the process chamber, and an exhaust adjusting unit configured to adjust a discharge amount of the process gas and residual gases in the process chamber, wherein the exhaust adjusting unit includes a ring-shaped first exhaust ring provided on a side of the substrate support unit and having a plurality of exhaust holes, a ring-shaped second exhaust ring provided below the first exhaust ring and having a plurality of exhaust holes, and an adjustment part configured to adjust relative locations of the plurality of exhaust holes provided in the second exhaust ring with respect to the plurality of exhaust holes provided in the first exhaust ring.

Abstract: Disclosed are a substrate treating The substrate treating apparatus includes a plasma generating unit the plasma generating unit includes a plasma generating chamber having a space, into which a gas is introduced, a first antenna wound to surround the plasma generating chamber and connected to a power source through a first electric wire, a second antenna wound to surround the housing and connected to the power source through a second electric wire to be disposed in parallel to the first antenna, and power distributing members provided in the first antenna and the second antenna to distribute electric power supplied from the power source to the first antenna and the second antenna.

Abstract: Provided is a support unit. The support unit includes a support plate having a top surface in which a measurement groove is defined and on which a substrate is placed, and a sensor for measuring a pressure in the measurement groove in the state where the substrate is placed on the support plate. The measurement groove has a main measurement groove that extends from a central area of the support plate up to an edge area of the support plate.

Abstract: Disclosed herein is an upper housing 100 having openings that are respectively defined in a front surface and a rear surface thereof and in which first and second moving paths 110 and 120 are defined; a first blade 200 installed in the upper housing 100 to move upward from a lower side, thereby opening/closing the first moving path 110; a first shaft 300 coupled to a lower portion of the first blade 200; a lower housing 400 disposed below the upper housing 100, in which a rotation guide groove 410 for guiding rotation of a L-motion block 500 at a fixed position while the first blade 200 moves in a close direction C is defined in each of both inner surfaces of the lower housing (400).

Abstract: Provided is a substrate treating apparatus. The substrate treating apparatus includes an equipment front end module, a loadlock chamber, a transfer chamber, and a plurality of process chambers. The loadlock chamber includes a cooling unit for cooling a substrate treated in the process chambers, and the cooling unit includes a cooling chamber having an inner space, the cooling chamber having a gas inflow hole in one surface thereof, wherein support pins on which the substrate is placed are disposed around a circumference of the gas injection hole, a cooling gas injection part supplying a cooling gas toward the gas inflow hole, and a gas exhaust part exhausting the cooling gas supplied into the cooling chamber and fumes generated from the substrate to the outside of the cooling chamber.

Abstract: Provided is a substrate processing apparatus. The substrate treating apparatus includes a processing chamber, a substrate supporting unit, a plasma generation unit, a gas supplying unit, an exhaust adjusting unit, or the like. Residual gas and reaction by-products are generated in a chamber after a substrate is treated by using a gas supplied from the gas supplying unit or plasma excited by the plasma generation unit. The gas exhaust adjusting unit adjusts discharge amounts of residual gas and reaction by-products to adjust residence time or pressure of gas, plasma, or the like in the apparatus, thereby controlling a uniformity of the substrate treating process.

Abstract: Provided are an apparatus and a method for treating substrates. The apparatus includes a process chamber, a support plate to support a substrate inside the process chamber, a gas supply unit to supply a gas into the process chamber, a first plasma generation unit provided to generate plasma inside the process chamber, and a second plasma generation unit provided to generate plasma outside the process chamber. An etching process, an ashing process, an edge cleaning process, and a back-surface cleaning process are sequentially performed on the substrate inside the process chamber.