Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a chuck supporting a substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate supported on the chuck, and an edge electrode provided to surround the substrate supported on the chuck when viewed from above and to generate plasma from the gas, wherein the edge electrode has a ring shape and a groove recessed in a direction from an inner periphery of the edge electrode to an outer periphery of the edge electrode when viewed from above is formed in the edge electrode.

Abstract: An apparatus for treating a substrate includes a housing including an open top and a treatment space therein, a gas supply unit configured to supply gas to the treatment space, a support unit including a chuck configured to support the substrate in the treatment space and an upper electrode provided to surround the check when viewed from the top, a dielectric plate unit including a dielectric plate arranged to oppose the substrate supported by the support unit in the treatment space, an upper electrode unit coupled to the dielectric plate unit and including an upper electrode arranged to oppose the lower electrode, and an aligning unit configured to align a horizontal arrangement of the dielectric plate unit, in which a lid extending from the housing in the horizontal direction and coupled to the upper electrode unit is provided on the housing, and the aligning unit is coupled to the lid.

Abstract: The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may comprise: a first housing; a second housing combined with the first housing to define an internal space; a rotation coupling part for O fastening the first housing and the second housing to each other such that one of the first housing and the second housing is rotatable with respect to the other one of the first housing and the second housing; and a channel which supplies a fluid to the internal space or discharges the fluid from the internal space, and has at least a part thereof inserted into a pin hole formed in the rotation coupling part.

Abstract: The present disclosure provides a substrate processing apparatus. The substrate processing apparatus includes a chamber defining a processing space, a gas supply unit supplying a process gas to the processing space, and a support unit supporting a substrate in the processing space, wherein the support unit includes a chuck supporting the substrate, a power applying RF power to the chuck, and an ionization path through which static electricity generated in the chuck is removed.

Abstract: Provided is an apparatus for processing a substrate, the apparatus including: a chamber having a processing space; a support unit for supporting a substrate in the processing space; a gas supply unit for supplying process gas to the processing space; and a plasma generation unit for generating plasma from the process gas, in which the plasma generation unit includes: an inner coil part including a plurality of inner coils; an outer coil part provided to surround the inner coil part when viewed from above and including a plurality of outer coils; an upper power source for applying power to the inner coil part and the outer coil part, and a ground plate disposed above the inner coil part and the outer coil part and grounding the inner coil part and the outer coil part.

Abstract: The present disclosure provides an apparatus for treating a substrate. The apparatus includes a chuck supporting the substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate, and an edge electrode provided to surround the substrate supported by the chuck when viewed from a top and configured to generate plasma from the gas, in which the edge electrode has a ring shape and a groove recessed from an inner circumference of the edge electrode to an outer circumference of the edge electrode when viewed from the top is formed in the edge electrode.

Abstract: Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a housing defining a treatment space formed by a combination of an upper housing and a lower housing, a gas supply unit configured to supply gas to the treatment space, a support unit including a chuck configured to support the substrate in the treatment space and an upper electrode provided to surround the check when viewed from a top view, a dielectric plate unit including a dielectric plate arranged to oppose the substrate supported by the support unit in the treatment space, and an upper electrode unit coupled to the dielectric plate unit and including an upper electrode arranged to oppose the lower electrode, in which the upper electrode unit is coupled to the lower housing.

Abstract: The present invention provides a support unit included in an apparatus for treating a substrate by using plasma. The support unit may include: a chuck configured to support a lower surface of the substrate; a moving plate provided to surround the chuck when viewed from above; and a lifting member configured to change an exposed area of an edge region of the substrate supported by the chuck for the treating space by relatively moving the moving plate in an upper or lower direction with respect to the chuck.

Abstract: Provided is a substrate processing apparatus including: a chuck configured to support a substrate; a dielectric plate disposed to face an upper surface of the substrate supported by the chuck; a gas supply unit configured to supply process gas to an edge region of the substrate; and a first edge electrode configured to generate plasma from the process gas to the edge region of the substrate supported by the chuck, in which the first edge electrode includes: a plurality of electrode units; and one or more insulating units provided between the electrode units.

Abstract: The present disclosure provides a substrate processing apparatus. The substrate processing apparatus includes a chamber defining a processing space, a gas supply unit supplying a process gas to the processing space, and a support unit supporting a substrate in the processing space, wherein the support unit includes a chuck supporting the substrate, a power applying RF power to the chuck, and an ionization path through which static electricity generated in the chuck is removed.

Abstract: The present disclosure provides an apparatus for treating a substrate. The apparatus includes a chuck supporting the substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate, and an edge electrode provided to surround the substrate supported by the chuck when viewed from a top and configured to generate plasma from the gas, in which the edge electrode has a ring shape and a groove recessed from an inner circumference of the edge electrode to an outer circumference of the edge electrode when viewed from the top is formed in the edge electrode.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a housing having an interior space, a lower electrode unit supporting a substrate in the interior space, an upper electrode unit facing the lower electrode unit, and a gas supply unit supplying a process gas to the interior space, wherein the upper electrode unit includes a dielectric plate facing an upper surface of the substrate supported by the lower electrode unit, a support body supporting the dielectric plate, wherein the support body and the dielectric plate are combined with each other to form a buffer space and the gas supply unit supplies the process gas to the interior space via the buffer space, and a baffle ring disposed on a flow path of the process gas flowing from the buffer space to the interior space.

Abstract: Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a housing defining a treatment space formed by a combination of an upper housing and a lower housing, a gas supply unit configured to supply gas to the treatment space, a support unit including a chuck configured to support the substrate in the treatment space and an upper electrode provided to surround the check when viewed from a top view, a dielectric plate unit including a dielectric plate arranged to oppose the substrate supported by the support unit in the treatment space, and an upper electrode unit coupled to the dielectric plate unit and including an upper electrode arranged to oppose the lower electrode, in which the upper electrode unit is coupled to the lower housing.

Abstract: An apparatus for treating a substrate includes a housing including an open top and a treatment space therein, a gas supply unit configured to supply gas to the treatment space, a support unit including a chuck configured to support the substrate in the treatment space and an upper electrode provided to surround the check when viewed from the top, a dielectric plate unit including a dielectric plate arranged to oppose the substrate supported by the support unit in the treatment space, an upper electrode unit coupled to the dielectric plate unit and including an upper electrode arranged to oppose the lower electrode, and an aligning unit configured to align a horizontal arrangement of the dielectric plate unit, in which a lid extending from the housing in the horizontal direction and coupled to the upper electrode unit is provided on the housing, and the aligning unit is coupled to the lid.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substrate at the treating space; and a gas supply unit configured to supply a gas which is excited to a plasma to the treating space, and wherein the support unit includes: a chuck supporting a center region of the substrate; and an edge electrode formed in a ring shape, and wherein the edge electrode includes: a body portion surrounding the chuck at an outer side of the chuck; and a protrusion portion formed protruding to an outer side of the body portion, and a hole is formed at the protrusion portion penetrating the protrusion portion and which exhausts an atmosphere of the treating space.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substate within the treating space; and a plasma source for generating a plasma by exciting a gas supplied to the treating space, and wherein the support unit includes: a chuck having the substrate mounted to a top surface thereof; and a ring member in a ring shape surrounding an outer side of the chuck, and the ring member includes a cut surface which divides the ring member and a holding member positioned at the cut surface which holds a position of the ring member which is divided by the cut surface.

Abstract: Embodiments of the inventive concept provide a substrate processing apparatus. The substrate treating apparatus comprises a process treating unit providing a treating space performed treating the substrate; a plasma generating unit generating the plasma discharging a process gas, and supplying the plasma to the treating space. The plasma generating unit provides a plasma chamber having a generating space of the plasma; an antenna wound to surround the plasma chamber outside the plasma chamber; a first coating film covering inside walls of the plasma chamber and comprising yttrium fluoride (YF3).

Abstract: The inventive concept relates to an apparatus for processing a substrate. In an embodiment, the apparatus for processing the substrate includes a plasma chamber, a coil electrode installed around the plasma chamber, and a Faraday shield provided between the coil electrode and the plasma chamber. The Faraday shield includes a cutout having a plurality of slots formed in a vertical direction along a periphery of the plasma chamber, an upper rim provided at the top of the cutout, and a lower rim provided at the bottom of the cutout. The upper rim and the lower rim have a thermal expansion reduction means configured to reduce a difference in thermal deformation between the upper and the lower rim and the cutout.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a chuck supporting a substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate supported on the chuck, and an edge electrode provided to surround the substrate supported on the chuck when viewed from above and to generate plasma from the gas, wherein the edge electrode has a ring shape and a groove recessed in a direction from an inner periphery of the edge electrode to an outer periphery of the edge electrode when viewed from above is formed in the edge electrode.

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.