Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a process chamber, a substrate support unit configured to support a substrate in the process chamber, a gas supply unit configured to supply a process gas into the process chamber, and an exhaust adjusting unit configured to adjust a discharge amount of the process gas and residual gases in the process chamber, wherein the exhaust adjusting unit includes a ring-shaped first exhaust ring provided on a side of the substrate support unit and having a plurality of exhaust holes, a ring-shaped second exhaust ring provided below the first exhaust ring and having a plurality of exhaust holes, and an adjustment part configured to adjust relative locations of the plurality of exhaust holes provided in the second exhaust ring with respect to the plurality of exhaust holes provided in the first exhaust ring.

Abstract: Disclosed are a substrate treating The substrate treating apparatus includes a plasma generating unit the plasma generating unit includes a plasma generating chamber having a space, into which a gas is introduced, a first antenna wound to surround the plasma generating chamber and connected to a power source through a first electric wire, a second antenna wound to surround the housing and connected to the power source through a second electric wire to be disposed in parallel to the first antenna, and power distributing members provided in the first antenna and the second antenna to distribute electric power supplied from the power source to the first antenna and the second antenna.

Abstract: Provided is a support unit. The support unit includes a support plate having a top surface in which a measurement groove is defined and on which a substrate is placed, and a sensor for measuring a pressure in the measurement groove in the state where the substrate is placed on the support plate. The measurement groove has a main measurement groove that extends from a central area of the support plate up to an edge area of the support plate.

Abstract: Disclosed herein is an upper housing 100 having openings that are respectively defined in a front surface and a rear surface thereof and in which first and second moving paths 110 and 120 are defined; a first blade 200 installed in the upper housing 100 to move upward from a lower side, thereby opening/closing the first moving path 110; a first shaft 300 coupled to a lower portion of the first blade 200; a lower housing 400 disposed below the upper housing 100, in which a rotation guide groove 410 for guiding rotation of a L-motion block 500 at a fixed position while the first blade 200 moves in a close direction C is defined in each of both inner surfaces of the lower housing (400).

Abstract: Provided is a substrate treating apparatus. The substrate treating apparatus includes an equipment front end module, a loadlock chamber, a transfer chamber, and a plurality of process chambers. The loadlock chamber includes a cooling unit for cooling a substrate treated in the process chambers, and the cooling unit includes a cooling chamber having an inner space, the cooling chamber having a gas inflow hole in one surface thereof, wherein support pins on which the substrate is placed are disposed around a circumference of the gas injection hole, a cooling gas injection part supplying a cooling gas toward the gas inflow hole, and a gas exhaust part exhausting the cooling gas supplied into the cooling chamber and fumes generated from the substrate to the outside of the cooling chamber.

Abstract: Provided is a substrate processing apparatus. The substrate treating apparatus includes a processing chamber, a substrate supporting unit, a plasma generation unit, a gas supplying unit, an exhaust adjusting unit, or the like. Residual gas and reaction by-products are generated in a chamber after a substrate is treated by using a gas supplied from the gas supplying unit or plasma excited by the plasma generation unit. The gas exhaust adjusting unit adjusts discharge amounts of residual gas and reaction by-products to adjust residence time or pressure of gas, plasma, or the like in the apparatus, thereby controlling a uniformity of the substrate treating process.

Abstract: Provided are an apparatus and a method for treating substrates. The apparatus includes a process chamber, a support plate to support a substrate inside the process chamber, a gas supply unit to supply a gas into the process chamber, a first plasma generation unit provided to generate plasma inside the process chamber, and a second plasma generation unit provided to generate plasma outside the process chamber. An etching process, an ashing process, an edge cleaning process, and a back-surface cleaning process are sequentially performed on the substrate inside the process chamber.

Abstract: Provided is a plasma generating device. The plasma generating device includes: an RF power supply providing an RF signal; a plasma chamber providing a space where gas is injected to generate plasma; a first electromagnetic inducer installed at one portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a second electromagnetic inducer installed at another portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a first load connected to the first electromagnetic inducer; a second load connected to the second electromagnetic inducer; and a controller controlling a power supplied to the first electromagnetic inducer and the second electromagnetic inducer by adjusting at least one impedance of the first load and the second load.

Abstract: Provided is a substrate treating apparatus, which includes a plasma generating part configured to generate plasma, a housing disposed under the plasma generating part, and having a space therein, a susceptor disposed within the housing and supporting a substrate, and a baffle including injection holes injecting the plasma supplied from the plasma generating part, to the substrate. The baffle includes a base in which the injection holes are formed, and a central portion of the base is thicker than an edge thereof.

Abstract: Provided is a substrate treatment apparatus. The substrate treatment apparatus includes a load port on which a carrier accommodating a plurality of substrates to which a back-ground wafer is attached to a mounting tape fixed to a frame ring is placed, a plasma treatment unit supplying plasma to treat a top surface of the wafer, and a substrate transfer unit transferring the substrate between the carrier and the plasma treatment unit.

Abstract: Provided is an apparatus for manufacturing a light guiding plate. The apparatus for manufacturing a light guiding plate includes an unwinding unit unwinding a film formed of a flexible material and wound in a roll shape, a winding unit winding the film provided from the unwinding unit in a roll shape, a surface treatment unit disposed between the unwinding unit and the winding unit to treat a surface of the film transferred into the winding part into a hydrophobic surface, a pattern formation unit disposed between the surface treatment unit and the winding unit to form a micro lens pattern on the surface of the film of which the surface is treated, and a pattern curing unit disposed between the pattern formation unit and the winding unit to cure the pattern.

Abstract: Provided are a substrate transfer apparatus and method and a substrate processing apparatus. The substrate transfer apparatus includes: a body portion; an arm part coupled to the body portion, the arm part moving to allow the substrate to be transferred; a suction part provided with the arm portion, the suction part suctioning and fixing the substrate; and a control part controlling an operation of the substrate transfer apparatus, wherein the control part changes a suction point on the substrate to re-attempt suction when suction of the substrate by the suction part is unsuccessful.

Abstract: The present invention disclosed herein relates to a substrate treating apparatus and method. The substrate treating method includes: providing a substrate on which an oxide layer is formed; treating the oxide layer with a first process gas in a plasma state to substitute the treated oxide layer with a by-product layer; and heating the substrate to remove the by-product layer at a temperature which is above a first heating temperature at which the by-product layer is decomposed and is above a second heating temperature that is a boiling point of an additive by-product generated while the by-product layer is decomposed.

Abstract: Provided is a substrate treating apparatus. The substrate treating apparatus includes an equipment front end module, a loadlock chamber, a transfer chamber, and a plurality of process chambers. The loadlock chamber includes a cooling unit for cooling a substrate treated in the process chambers, and the cooling unit includes a cooling chamber having an inner space, the cooling chamber having a gas inflow hole in one surface thereof, wherein support pins on which the substrate is placed are disposed around a circumference of the gas injection hole, a cooling gas injection part supplying a cooling gas toward the gas inflow hole, and a gas exhaust part exhausting the cooling gas supplied into the cooling chamber and fumes generated from the substrate to the outside of the cooling chamber.

Abstract: A plasma generating apparatus is provided which includes an RF power which provides an RF signal; a plasma chamber which generates a plasma using the RF signal; a plurality of isolation loops which are formed along a circumference of the plasma chamber; and a plurality of electromagnetic applicators which are respectively coupled with the isolation loops and applies an electromagnetic field to the plasma chamber in response to the RF signal, wherein impedance values of the electromagnetic applicators increase according to an increase in a distance from an input terminal.

Abstract: Provided is a plasma generating device. The plasma generating device includes: an RF power supply providing an RF signal; a plasma chamber providing a space where gas is injected to generate plasma; a first electromagnetic inducer installed at one portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a second electromagnetic inducer installed at another portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a first load connected to the first electromagnetic inducer; a second load connected to the second electromagnetic inducer; and a controller controlling a power supplied to the first electromagnetic inducer and the second electromagnetic inducer by adjusting at least one impedance of the first load and the second load.

Abstract: Provided are a plasma chamber and a substrate treating apparatus. The plasma chamber includes a housing in which a gas is injected to generate plasma, a first coil disposed on one surface of the housing, and a second coil disposed on the other surface of the housing.

Abstract: Provided is a baffle. The baffle has holes for distributing a process gas excited in a plasma state. A surface of the baffle is treated by using a surface treating material containing an aromatic compound.

Abstract: Provided are a method for generating hollow cathode plasma and a method for treating a large area substrate using the hollow cathode plasma. In the methods, the hollow cathode plasma is generated by a gas introduced between a hollow cathode in which a plurality of lower grooves where plasma is generated is defined in a bottom surface thereof and a baffle in which a plurality of injection holes is defined. A substrate disposed on a substrate support member is treated using the hollow cathode plasma passing through the injection holes. The uniform plasma having high density can be generated by hollow cathode effect due to the hollow cathode having the lower grooves and the injection holes of the baffle. Also, since the substrate can be treated using a hydrogen gas and a nitrogen gas in an ashing process, a damage of a low dielectric constant dielectric can be minimized.

Abstract: The present invention is related to a method for transferring substrates. The method comprise simultaneously transferring two substrates, by means of a transfer unit, between first support plates disposed to be vertically spaced apart from each other and second support plates arranged abreast in a lateral direction. The transfer unit comprises a top blade and a bottom blade converted to a folded state where they are vertically disposed to face each other and an unfolded state where they rotate at a preset angle in opposite directions. The transfer unit place/take a substrate on/out of the first support plates under the folded state and place/take a substrate on/out of the second support plates under the unfolded state.