Abstract: A method for manufacturing a substrate for a flat panel display device is disclosed. The present method uses photolithography with four masks to manufacture a TFT-LCD. After the third half-tone mask is used, the manufacturing of the TFTs and the defining of the pixel area of the substrate can be completed. The present method can avoid the alignment deviation and the generation of parasitic capacitance happened on the substrate made through the conventional photolithography with five masks. Therefore, the present method can reduce the costs and increase the yield. Moreover, the substrate for the TFT-LCD made by the present method can define a channel region in the semiconductor layer after the second half-tone mask. Hence, the subsequent manufacturing for forming a transparent conductive layer, a source, and a drain can be achieved by wet etching to effectively reduce the non-homogeneous etching for the channel region in the semiconductor layer.

Abstract: A flip chip device made using LCD-COG (liquid crystal display-chip on glass) technique. The flip chip device comprises a substrate, at least one chip having active area with a plurality of compliant bumps thereon. The compliant bumps are centrally disposed in the center of the chip for electrically connecting the chip and the substrate. An adhesive is daubed on a joint area of the substrate and the chips for jointing the substrate and the chips. By limiting the position of the compliant bumps so that they are centrally disposed on the chips, the thermal warpage of the substrate is reduced.

Abstract: A contact structure having both a compliant bump and a testing area and a manufacturing method for the same is introduced. The compliant bump is formed on a conductive contact of the silicon wafer or a printed circuit board. The core of the bump is made of polymeric material, and coated with a conductive material. In particular, the compliant bump is disposed on the one side of the conductive contact structure that includes both the bump and the testing area, wherein the testing area allows the area to be functionality tested, so as to prevent damage of the coated conductive material over the compliant bump during a probe testing.

Abstract: A contact structure having both a compliant bump and a testing area and a manufacturing method for the same is introduced. The compliant bump is formed on a conductive contact of the silicon wafer or a printed circuit board. The core of the bump is made of polymeric material, and coated with a conductive material. In particular, the compliant bump is disposed on the one side of the conductive contact structure that includes both the bump and the testing area, wherein the testing area allows the area to be functionality tested, so as to prevent damage of the coated conductive material over the compliant bump during a probe testing.

Abstract: A method for manufacturing a substrate of a TFT LCD device is disclosed with following steps: providing a transparent substrate having a thin film transistors area and a storing capacitor area; forming an aluminum metal layer and a metal protecting layer on the substrate; patterning a first pattern on the aluminum metal layer of the TFT area, and a second pattern on the metal protecting layer of the storing capacitor area through a halftone mask; forming an aluminum nitride layer on the patterned metal protecting layer; removing the aluminum nitride layer form a rugged surface; forming patterned gates, patterned sources, and patterned drains over the patterned metal protecting layer of the TFT area, and forming a second metal layer over the rugged surface of the aluminum layer on the storing capacitor area, wherein the second metal layer is electrically connected with the drains; and forming patterned pixel electrodes.

Abstract: Development of 3-mask process to reduce the manufacturing cost of LCD-display device successively following 4-mask process. Opening formation process and pixel electrode formation process which is sequentially done following the opening formation process are treated with one photo-mask without using halftone exposure technology by forming source-drain wires comprising a low-resistance metal layer and a heat-resistant metal layer, the latter is capable of being removed with etching gas for etching gate insulating layer (and passivation insulating layer), giving protection means at least for the channel and the data line of the insulating gate transistor, forming openings in the insulating layers including the gate insulating layer with photosensitive resins having counter-taper cross sections, removing the exposed low-resistance metal in the openings, forming pixel electrode with the photosensitive resins as a lift-off material to lift off the conductive thin film for pixel electrode.

Abstract: A liquid crystal display array substrate. A trench is in a substrate. A gate, a gate dielectric layer, a semiconductor layer and a doped semiconductor layer are disposed in the trench, wherein the semiconductor layer comprises a channel. A source electrode and a drain electrode are respectively electrically connected to portions of the semiconductor layer on opposite sides of the channel.

Abstract: A method of manufacturing a reflecting substrate in a liquid crystal display device is disclosed, comprising the steps of: (a) providing a substrate having a first metal layer, wherein the first metal layer is formed with at least one soft metal or the alloys thereof; and (b) forming an aluminum nitride layer on the first metal layer. The method of the present invention is capable of forming a rugged, shining, reflective layer on a transflective, or a reflection type TFT LCD with simple steps and low cost.

Abstract: An apparatus for rubbing an alignment layer on a substrate is disclosed. The apparatus includes a platform to support the substrate; a conveyance unit incorporating the platform to convey the substrate in a predetermined direction; a rubbing roller located above the platform for rubbing the alignment layer on the substrate; a combing unit located at one side of the rubbing roller for contacting with the rubbing roller; and at least one vacuum suction unit located at one side of the platform to suck and remove the particles released from the rubbing. The combing unit serves to smoothen a rubbing cloth on the rubbing roller, with a result of low static electricity accumulation on the substrate and of a better alignment effect on the alignment layer.

Abstract: A direct patterning method for manufacturing a metal layer of a semiconductor device is provided. The claimed method reduces the materials and hours required by prior methods such as the thin film depositing method for a substrate, and the photolithographic method for manufacturing a transistor. The preferred embodiment of the present invention comprises a step of defining the pattern of the seeder material and a step of selectively thin film deposition. The direct patterned technology for the seeder and a chemical bath deposition (CBD) are utilized to provide the thin film growing method with non-vacuum and selective deposition. The object of the invention is applied to produce the wire or electrode, within the semiconductor device, or to deposit and manufacture the thin film in the large-area transistor array or a reflective layer.

Abstract: A liquid crystal display having one or more pixels, each of which includes a first sub-pixel operating at a first threshold voltage, and a second sub-pixel neighboring the first sub-pixel, and operating at a second threshold voltage. The first sub-pixel is divided into two separate portions by the second sub-pixel to form at least four domains of liquid crystal molecules illuminating at various gray levels for improving viewing angle characteristics of the liquid crystal display.

Abstract: A method for manufacturing a liquid crystal display device is disclosed. The method includes the steps of: forming multiple spacers having a cavity on the upper substrate or on the lower substrate; injecting adhesives or binders in the cavities of the spacers; and curing the adhesives or the binders in the cavities to bind the upper substrate and the lower substrate. Through the method illustrated above, the strength for combining these two substrates can be enhanced. Moreover, the uniformity of the gap inside the LCD panel, and the gravity mura resulted from the gravity can be improved. Therefore, the lifetime of the LCD can be extended.

Abstract: A liquid crystal display bottom substrate with bumps is disclosed, which comprises: one thin film transistor located on a surface of a substrate, a passivation layer covered over the surface of the thin film transistor and that of the substrate, and a reflective metal layer formed over the passivation layer. A plurality of bumps are formed on the surface of the passivation layer, wherein the bumps have asymmetric shapes in the cross sections, and the projection of the center of said bumps on the substrate is not overlapped with the projection of the peak of the same bumps.

Abstract: A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

Abstract: A method for manufacturing a pixel electrode contact structure of a thin-film transistors liquid crystal display is disclosed. First, a transparent substrate having a first insulating layer thereon is provided. Afterward, a first metal layer and a second metal layer are sequentially formed on the substrate and then be patterned by a halftone technology and an etching process, wherein the second metal layer is removed within the pixel electrode contact area. In the meantime, the drain lines of the thin-film transistor comprising the first metal layer and the second metal layer are formed. Next, a patterned passivation layer is formed on the substrate. Finally, a pixel electrode layer directly connecting the first metal layers within the pixel electrode contact structure is formed on the substrate. This invention provides the pixel electrode contact structure with low contact resistance and prevents the current leakage from the drain line to the storage capacitor.

Abstract: A multi-domain vertical alignment liquid crystal display device comprises a first substrate having a plurality of protrusions and a first electrode; a second substrate having a plurality of pixel electrodes, a plurality of first slits and a plurality of second slits; and a liquid crystal layer interposed between the first substrate and the second substrate. The first electrode is disposed on the surface of the first substrate. The protrusions are disposed on part of the surface of the first electrode. The pixel electrodes are disposed on the surface of the second substrate. The first slits are disposed among the pixel electrodes without intersecting the projections of the protrusions on the second substrate. The second slits are disposed on the edge of the first slits, extending in a direction to intersect the projections of the protrusions on the second substrate.

Abstract: A multi-function integrated polarizer/optical film structure and manufacturing method thereof solves the disadvantages of O type or E type polarizers that cannot simultaneously have high polarizing efficiency and high transmittance. The present invention utilizes optical design for a polarizer/optical film having a plurality of material layers on substrates. The present invention is a multi-function integrated polarizer/optical film structure and manufacturing method thereof, that allows an LCD image to have high polarizing efficiency, high transmittance, wide-angle, high contrast and super-film characteristics simultaneously.

Abstract: An active TFT circuit structure with current scaling function is disclosed, which includes a current source, a data line, a scan line, a direct current voltage source, capacitors and four transistors, wherein the capacitors form a cascade structure. During the ON-state, the two of the transistors are turn-on based on the voltage provided by the scan line, so that the data current provided by the current source flows through the data line-and the transistor which is one of the opened transistors, thereby arriving an emitting light element and the transistor connected to the emitting light element. When the pixel circuit changes from ON- to OFF-state, the voltage of the node between the storage capacitors reduces due to the feed-through effect of one of storage capacitor, thereby reducing the driving current of the emitting light element. Therefore, it can be achieved the current scaling function.

Abstract: A flip chip device made using LCD-COG (liquid crystal display-chip on glass) technique. The flip chip device comprises a substrate, at least one chip having active area with a plurality of compliant bumps thereon. The compliant bumps are centrally disposed in the center of the chip for electrically connecting the chip and the substrate. An adhesive is daubed on a joint area of the substrate and the chips for jointing the substrate and the chips. By limiting the position of the compliant bumps so that they are centrally disposed on the chips, the thermal warpage of the substrate is reduced.

Abstract: A method for manufacturing a substrate of a TFT LCD device is disclosed with following steps: providing a transparent substrate having a thin film transistors area and a storing capacitor area; forming an aluminum metal layer and a metal protecting layer on the substrate; patterning a first pattern on the aluminum metal layer of the TFT area, and a second pattern on the metal protecting layer of the storing capacitor area through a halftone mask; forming an aluminum nitride layer on the patterned metal protecting layer; removing the aluminum nitride layer form a rugged surface; forming patterned gates, patterned sources, and patterned drains over the patterned metal protecting layer of the TFT area, and forming a second metal layer over the rugged surface of the aluminum layer on the storing capacitor area, wherein the second metal layer is electrically connected with the drains; and forming patterned pixel electrodes.