Abstract: The invention provides a novel technology where a TFT array substrate for a display device is formed with three photomasks. The invention is achieved by using the novel technology in combination with a well-known four-masks process. For the novel technology, during the lithography process where a photosensitive acrylic resin film is used to make contacts, taper patterns required for general through holes are formed simultaneously with a fine pattern formed in a light shielding area that is tapered more approximately to vertical, using a photomask with phase-shift effect. Thus the pixel electrode pattern can be separated without using lithography process in subsequent processes.

Abstract: A method to control the pretilt angle of a liquid crystal device is disclosed. The claimed invention provides two substrates and at least one vertical alignment layers, which are fabricated on one side of each substrate and are opposite to each other. Moreover, a liquid crystal layer is sandwiched between the alignment layers, and the preferred embodiment of the liquid crystal device has an Optically Compensated Birefrigence (OCB) configuration. More particularly, before the process of alignment for the liquid crystal device is performed, a pretilt angle disclosed in the present invention is adjusted since at least one vertical alignment layer is treated with a particle beam generated by plasma or ions. The pretilt angle can range between 5 and 85 degrees.

Abstract: A method for manufacturing a substrate of a TFT LCD device is disclosed with following steps: providing a transparent substrate having a thin film transistors area and a storing capacitor area; forming an aluminum metal layer and a metal protecting layer on the substrate; patterning a first pattern on the aluminum metal layer of the TFT area, and a second pattern on the metal protecting layer of the storing capacitor area through a halftone mask; forming an aluminum nitride layer on the patterned metal protecting layer; removing the aluminum nitride layer form a rugged surface; forming patterned gates, patterned sources, and patterned drains over the patterned metal protecting layer of the TFT area, and forming a second metal layer over the rugged surface of the aluminum layer on the storing capacitor area, wherein the second metal layer is electrically connected with the drains; and forming patterned pixel electrodes.

Abstract: A method that uses at least one hydrogen ion beam for alignment of liquid crystal molecules is proposed in the present invention. The method of the present invention is proposed to resolve the problems of physical destruction and surface deterioration of the alignment films caused by the conventional method using argon ions beams. The method of the present invention directly uses at least one hydrogen ion beam to impact the alignment film. Hence, the physical destruction of the alignment film is reduced. In addition, via the reaction between hydrogen ions and the alignment films, the quality of the alignment film is improved.

Abstract: An apparatus for rubbing an alignment layer on a substrate is disclosed. The apparatus includes a platform to support the substrate; a conveyance unit incorporating the platform to convey the substrate in a predetermined direction; a rubbing roller located above the platform for rubbing the alignment layer on the substrate; a combing unit located at one side of the rubbing roller for contacting with the rubbing roller; and at least one vacuum suction unit located at one side of the platform to suck and remove the particles released from the rubbing. The combing unit serves to smoothen a rubbing cloth on the rubbing roller, with a result of low static electricity accumulation on the substrate and of a better alignment effect on the alignment layer.

Abstract: A pixel module comprising a first transistor, a second transistor, and a connection line is disclosed. The first transistor is coupled to a first gate line, a source line, and a first drain line. The second transistor is coupled to a second gate line, the source line, and a second drain line. The connection line overlaps and isolates the first and the second drain lines.

Abstract: A method for manufacturing copper wires on a substrate for a flat panel display device is disclosed. The method comprises following steps: providing a substrate; forming a seed layer on the surface; forming a patterned photoresist on the surface of the seed layer to expose a part of the seed layer; and plating a copper layer on the exposed part of the seed layer. As the copper layer is plated, an electrolyte solution comprises a sulfur-containing compound is used. The angle between the surface of the copper layer and the contact surface of the seed layer is greater than 0 degree and less than 90 degree. Through the method illustrated above, the film step-coverage in the following process can be improved, the generated voids in device can be reduced, the manufacturing steps can be simplified, and the complicated etching process can be avoided.

Abstract: A method of fabricating an active layer thin film by a metal-chalcogenide precursor solution is provided, including the steps of: synthesizing a metal-chalcogenide precursor containing benzyl or benzyl derivative; dissolving the precursor in a solvent to produce a precursor solution, wherein a chalcogen element or compound can be added to the precursor solution to adjust the molar ratio of metal ion to chalcogen; and then applying the precursor solution onto a substrate in a specific coating manner, to form a film of the metal-chalcogenide after a curing process. Thereby, the existing method wherein an amorphous silicon active layer film is fabricated by plasma enhanced chemical vapor deposition (PECVD) is replaced.

Abstract: A lighting device including a frame, at least one U-shaped fluorescent tube, a diffusing plate, and a prism sheet having a plurality of prisms and being positioned between the fluorescent tube and the diffusing plate with the prism apices aligned in the axial direction of the fluorescent tube. The prism sheet covers the bent portion of the fluorescent tube to eliminate uneven luminance.

Abstract: A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. Then, an insulating layer is formed on the substrate to cover the gate. A semiconductor layer is formed on the insulating layer above the gate. A source/drain is formed on the semiconductor layer. After forming the source/drain, a surface treatment process is performed.

Abstract: A liquid crystal display with high contrast and little color difference between white plain color and black plain color is disclosed, in which in the color layers formed on an optically transparent substrate, the contrasts of red (R), green (G), and blue (B) CRR, CRG, and CRB have a relationship of 16×(CRR/CRG)?3>CRB/CRG>CRR/CRG, and the total contrast CRR, G, B calculated from the contrasts of color layers CRR, CRG, and CRB and the contrast of a polarizing plate CRPOL satisfy a relationship of CRR, G, B/CRPOL>0.11.

Abstract: A method of manufacturing a reflecting substrate in a liquid crystal display device is disclosed, comprising the steps of: (a) providing a substrate having a first metal layer, wherein the first metal layer is formed with at least one soft metal or the alloys thereof; and (b) forming an aluminum nitride layer on the first metal layer. The method of the present invention is capable of forming a rugged, shining, reflective layer on a transflective, or a reflection type TFT LCD with simple steps and low cost.

Abstract: A pixel structure is provided. A scan line and a data line are disposed over a substrate. A first, second, and third thin film transistors are electrically connected with the data line and the scan line. The width-to-length ratios of the second and third thin film transistors are the same but larger than that of the first thin film transistor. A first, second and third pixel electrodes are electrically connected with the first, the second and the third thin film transistors, respectively. A first, second and third common lines are disposed below the first, second and third pixel electrodes respectively. The first and second common lines are electrically connected to a first voltage and the third common line is electrically connected to a second voltage.

Abstract: A method for manufacturing a pixel electrode contact structure of a thin-film transistors liquid crystal display is disclosed. First, a transparent substrate having a first insulating layer thereon is provided. Afterward, a first metal layer and a second metal layer are sequentially formed on the substrate and then be patterned by a halftone technology and an etching process, wherein the second metal layer is removed within the pixel electrode contact area. In the meantime, the drain lines of the thin-film transistor comprising the first metal layer and the second metal layer are formed. Next, a patterned passivation layer is formed on the substrate. Finally, a pixel electrode layer directly connecting the first metal layers within the pixel electrode contact structure is formed on the substrate. This invention provides the pixel electrode contact structure with low contact resistance and prevents the current leakage from the drain line to the storage capacitor.

Abstract: A method of manufacturing a reflecting substrate in a liquid crystal display device is disclosed, comprising the steps of: (a) providing a substrate having a first metal layer, wherein the first metal layer is formed with at least one soft metal or the alloys thereof; and (b) forming an aluminum nitride layer on the first metal layer. The method of the present invention is capable of forming a rugged, shining, reflective layer on a transflective, or a reflection type TFT LCD with simple steps and low cost.

Abstract: In the conventional manufacture method that has reduced the number of manufacture processes by forming semiconductor layers and source-drain wires for a channel-etch type insulating gate transistor in a single photo etching process using halftone exposure technology, the channel length increases when the photosensitive resin pattern used at above formation process of source-drain patterning is reduced. Hence the manufacture tolerance (margin) is small, and the yield decreases when the distance between the source wire and drain wire is shortened.

Abstract: A contact structure having both a compliant bump and a testing area and a manufacturing method for the same is introduced. The compliant bump is formed on a conductive contact of the silicon wafer or a printed circuit board. The core of the bump is made of polymeric material, and coated with a conductive material. In particular, the compliant bump is disposed on the one side of the conductive contact structure that includes both the bump and the testing area, wherein the testing area allows the area to be functionality tested, so as to prevent damage of the coated conductive material over the compliant bump during a probe testing.

Abstract: A side fixing frame for a liquid crystal display device is provided. The side fixing frame has a U-shaped configuration and is provided with multiple engaging elements. The engaging elements of the side fixing frame couple with corresponding counterparts of a supporting frame used in a liquid crystal display device so as to fasten the side fixing frame with the supporting frame. Because of the U-shaped configuration design of the side fixing frame, the frame can attain the desired securing strength and reduce the materials needed for producing the side fixing frame and the production cost.

Abstract: An active device array substrate including a substrate, a plurality of scan lines, a plurality of data lines, a plurality of active devices, a patterned passivation layer, a plurality of pixel electrodes and a sealant layer is provided. The scan lines, the data lines and the active devices are disposed over the substrate. Each active device is electrically connected to one of the scan lines and one of the data lines correspondingly. The active devices are covered by the patterned passivation layer having a plurality of ditches. Additionally, the pixel electrodes are disposed on the patterned passivation layer and electrically connected to the corresponding active device. The sealant layer is located surrounding the display area, and a buffer area is located between the sealant layer and the display area. Moreover, the ditches are communicated to the buffer area.

Abstract: A method of fabricating a color filter substrate is provided. First, several color filter patterns are formed on a substrate. Then, an opaque layer is formed over the substrate and the color filter patterns. After that, the opaque layer is patterned to form a black matrix between the color filter patterns and several protrusions on the color filter patterns simultaneously. Finally, several spacers are formed on a part of the black matrix.