Abstract: Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.

Abstract: A control component implements pipelined data processing operations in either of two timing domains bridged by a domain-crossing circuit according to one or more configuration signals that indicate relative clock frequencies of the two domain and/or otherwise indicate which of the two timing domains will complete the data processing operations with lowest latency.

Abstract: Space in a memory is allocated based on the highest used precision. When the maximum used precision is not being used, the bits required for that particular precision level (e.g., floating point format) are transferred between the processor and the memory while the rest are not. A given floating point number is distributed over non-contiguous addresses. Each portion of the given floating point number is located at the same offset within the access units, groups, and/or memory arrays. This allows a sequencer in the memory device to successively access a precision dependent number of access units, groups, and/or memory arrays without receiving additional requests over the memory channel.

Abstract: Multiple device stacks are interconnected in a ring topology. The inter-device stack communication may utilize a handshake protocol. This ring topology may include the host so that the host may initialize and load the device stacks with data and/or commands (e.g., software, algorithms, etc.). The inter-device stack interconnections may also be configured to include/remove the host and/or to implement varying numbers of separate ring topologies. By configuring the system with more than one ring topology, and assigning different problems to different rings, multiple, possibly unrelated, machine learning tasks may be performed in parallel by the device stack system.

Abstract: A dynamic random access memory (DRAM) device includes memory core circuitry and power supply circuitry. The memory core circuitry includes an array of DRAM storage cells, with ones of the DRAM storage cells coupled to wordline and bitline power supply busses. The power supply circuitry is coupled to the wordline and bitline power supply busses. The power supply circuitry is responsive to a control signal to generate one of a first set of respective wordline and bitline voltages for application to the wordline and bitline power supply busses in a first normal mode of operation, or to generate a second set of respective wordline and bitline voltages for application to the wordline and bitline power supply busses in a second normal mode of operation. A value of the control signal is based on a temperature parameter associated with the DRAM device.

Abstract: Technologies for detecting an error using a message authentication code (MAC) associated with cache line data and differentiating the error as having been caused by an attack on memory or a MAC verification failure caused by an ECC escape. One memory buffer device includes an in-line memory encryption (IME) circuit to generate the MACs and verify the MACs. Upon a MAC verification failure, the memory buffer device can analyze at least one of the historical MAC verification failures or historical ECC-corrected errors over time to determine if the error is caused by an attack on memory.

Abstract: A system includes a memory controller and a memory device having a command interface, refresh circuitry, control logic, and a plurality of memory banks, each with a plurality of rows of memory cells. The command interface is operable to receive a refresh command from a memory controller and the refresh circuitry is configured to perform one or more refresh operations to refresh data stored in at least one bank of the plurality of memory banks during a refresh time interval in response to the refresh command from the memory controller. The control logic is to configure the command interface to enter a calibration mode during the refresh time interval, and the command interface is configured to perform a calibration operation in the calibration mode during the refresh time interval.

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory component is disclosed that includes a memory core, a primary interface, and a secondary interface. The primary interface includes data input/output (I/O) circuitry and control/address (C/A) input circuitry, and accesses the memory core during a normal mode of operation. The secondary interface accesses the memory core during a fault mode of operation.

Abstract: A switching power supply employs constant-on-time control to maintain an output-voltage signal across a load. The output-voltage signal includes DC and ripple components. An error amplifier issues an error signal responsive to deviations between the DC component and a reference. A ripple injector integrates the DC and ripple components into a feedback signal. A constant on-time control circuit uses both the error signal and the integrated feedback signal to suppress transient DC fluctuations of the output voltage and improve DC regulation.

Abstract: A binary receiver combines a fast amplifier with a relatively slow amplifier for noise rejection. Both the fast and slow amplifiers employ hysteresis. The fast amplifier has relatively lower hysteresis, meaning that its sensitivity is a less effected by prior data values but more susceptible to glitch-induced errors. Conversely, the slow amplifier has relatively higher hysteresis and rejects glitches but introduces undesirable signal-propagation delays. A state machine taking input from both amplifiers allows the receiver to filter glitches without incurring a significant data-propagation delay.

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory controller is disclosed. The memory controller includes write queue logic that has first storage to temporarily store signal components of a write operation. The signal components include an address and write data. A transfer interface issues the signal components of the write operation to a bank of a storage class memory (SCM) device and generates a time value. The time value represents a minimum time interval after which a subsequent write operation can be issued to the bank. The write queue logic includes an issue queue to store the address and the time value for a duration corresponding to the time value.

Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

Abstract: Multiple helper data solutions (a.k.a., helper data images) are generated to produce preselected non-random values (a.k.a., “target values”) from a physically unclonable function (PUF) circuit. Therefore, multiple preselected PUF output values may be generated for a given integrated circuit die, where each the output values are derived from a combination of the chip-unique PUF circuit and the chip-unique helper data solution. These helper data blocks are stored in a nonvolatile memory on the integrated circuit die. In an embodiment, the preselected non-random values may be used as secret encryption or decryption keys. In this manner, multiple secret values can be reliably stored within a chip, using a combination of the chip-unique PUF circuit and the multiple chip-unique helper data solution.

Abstract: Bandwidth for information transfers between devices is dynamically changed to accommodate transitions between power modes employed in a system. Bandwidth is changed by selectively enabling and disabling individual control links and data links that carry information. During a highest bandwidth mode for the system, all of the data and control links are enabled to provide maximum information throughout. During lower bandwidth modes for the system, at least one data link and/or at least one control link is disabled to reduce the power consumption of the devices. At least one data link and at least one control link remain enabled during each low bandwidth mode. For these links, the same signaling rate is used for both bandwidth modes to reduce latency that would otherwise be caused by changing signaling rates. Also, calibration information is generated for disabled links so that these links may be quickly brought back into service.

Abstract: Row hammer is mitigated by issuing, to a memory device, mitigation operation (MOP) commands in order to cause the refresh of rows at a specified vicinity of a suspected aggressor row. These mitigation operation commands are each associated with respective row addresses that indicate the suspected aggressor row and an indicator of which neighbor row in the vicinity of the suspected aggressor row is to be refreshed. The mitigation operation commands are issued in response to a fixed number of activate commands. The suspected aggressor row is selected by randomly choosing, with equal probability, one of the N previous activate commands to supply its associated row address as the suspected aggressor row address. The neighbor row may be selected randomly with a probability that diminishes inversely with the distance between the suspected aggressor row and the neighbor row.

Abstract: A phase-locked loop or delay locked loop provides a coarse alignment between an input clock and an output clock. A latch receiver circuit provides an indicator of a delay error between the input clock and the output clock. The delay error is used by a control circuit or state machine to adjust a fine delay that affects the output clock signal timing relative to the input clock signal. The fine delay is adjusted to minimize the timing difference between the output clock signal and the input clock signal.

Abstract: An integrated circuit device is disclosed including core circuitry and interface circuitry. The core circuitry outputs in parallel a set of data bits, while the interface circuitry couples to the core circuitry. The interface circuitry receives in parallel a first number of data bits among the set of data bits from the core circuitry and outputs in parallel a second number of data bits. The ratio of the first number to the second number is a non-power-of-2 value.

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory module includes a pin interface for coupling to a memory controller via a bus. The module includes at least two non-volatile memory devices, and a buffer disposed between the pin interface and the at least two non-volatile memory devices. The buffer receives non-volatile memory access commands from the memory controller that are interleaved with DRAM memory module access commands.

Abstract: A system and method for performing a low overhead refresh management of a memory device. The method includes receiving, by a controller from a dynamic random access memory (DRAM) device via a feedback interface, a signal indicative of an occurrence of a row hammer event. The method includes determining, by the controller based on the signal, whether to schedule a refresh event. The method includes sending, by the controller responsive to determining whether to schedule the refresh event, a first command to the DRAM device to execute a refresh operation.

Abstract: A memory buffer device facilitates secure read and write operations associated with data that includes a predefined data pattern. For read operations, the memory buffer device detects a read data pattern in the read data that matches a predefined data pattern. The memory buffer device may then generate a read response that includes metadata identifying the read data pattern without sending the read data itself. The memory buffer device may also receive Write Request without Data (RwoD) commands from the host that include metadata identifying a write data pattern. The memory buffer device identifies the associated data pattern and writes the data pattern or the metadata to the memory array. The memory buffer device may include encryption and decryption logic for communicating the metadata in encrypted form.