Abstract: System and method for training and performing operations (e.g., read and write operations) on a double buffered memory topology. In some embodiments, eight DIMMs are coupled to a single channel. The training and operations schemes are configured with timing and signaling to allow training and operations with the double buffered memory topology. In some embodiments, the double buffered memory topology includes one or more buffers on a system board (e.g., motherboard).

Abstract: The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.

Abstract: A power-management integrated circuit (PMIC) is installed on a memory module to optimize power use among a collection of memory devices. The PMIC includes external power-supply nodes that receive relatively high and low supply voltages. Depending on availability, the PMIC uses one or both of these supply voltages to generate a managed supply voltage for powering the memory devices. The PMIC selects between operational modes for improved efficiency in dependence upon the availability of one or both externally provided supply voltages.

Abstract: Technologies for converting quad data rates on a host interface to double data rates on a memory interface are described. One memory module includes a data buffer device with a host-side interface circuit that sends or receives first data to and from a host device at a quad data rate and a memory-side interface circuit that sends or receives second data to and from a set of memory devices at a first specified data rate that is less than the quad data rate. The memory module includes conversion circuitry to down-convert the first data at the quad data rate to the second data at the first specified data rate and up-convert the second data at the first specified data rate to the first data at the quad data rate.

Abstract: Technologies for converting serial data stream to a parallel data and strobe scheme with data strobe preamble information in the serial data stream are described. A device includes an interface circuit that receives a serial data stream and converts the serial data stream to parallel data and a data strobe (DQS) signal associated with the parallel data using N-bit header fields inserted into the serial data stream. The N-bit header fields specify DQS preamble information for the parallel data.

Abstract: Disclosed systems and techniques involve storage of encrypted data in memory pages that may include units stored with different cryptographic keys. Data may be stored with error correction data that implicitly encodes an identification of a key (key selector) without additional memory being allocated to explicit storage of the key selector. During data retrieval, the key selector is recovered from error correction data by processing multiple instances of extended data in which the data is combined with various possible key selectors.

Abstract: An integrated circuit comprises an interface controller to receive a message, wherein at least a portion of the message is encrypted, a primary processor coupled to the interface controller and configured to process the received message, and a secondary secure processor coupled to the primary processor and to the interface controller. The secondary secure processor is configured to decrypt the portion of the message that is encrypted on behalf of the primary processor, analyze the decrypted portion of the message to determine whether the decrypted portion comprises information pertaining to sensitive data, and responsive to determining that the decrypted portion comprises information pertaining to sensitive data, process the information pertaining to the sensitive data and provide the sensitive data to the interface controller via a secure private bus not accessible by the primary processor.

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) dynamic random access memory (DRAM) device is disclosed. The IC DRAM device includes memory core circuitry organized into bank groups of storage cells, each bank group accessible via a corresponding bank group address. A command/address (C/A) interface receives C/A information defining a joint command. The joint command includes information specifying a first memory access operation, a first bank group address associated with the first memory access operation, and a second memory access operation to be automatically directed to the first bank group address.

Abstract: A sense amplifier for a memory device includes a primary latch and a holding latch that are independently controllable. The primary latch comprises a first set of transistors and the holding latch includes a second set of transistors having higher threshold voltages than the first set of transistors. In conjunction with a memory access operation, the primary latch and the holding latch sense and amplify a differential voltage of a pair of bitlines. A connectivity control circuit controls connectivity of the primary latch in different operational modes including pre-charge, offset pre-compensation, and amplification. In an active idle mode in between memory access operations while the wordline may remain active, the connectivity control circuit may turn off the primary latch while the holding latch holds the differential voltage on the bitlines to avoid leakage current through the primary latch.

Abstract: The described embodiments provide an integrated circuit (IC) memory controller to control operation of an IC memory device. The IC memory device includes a memory core and internal clock circuitry. The IC memory controller includes a command interface to transmit, to the IC memory device, a read command and a phase adjustment command. The phase adjustment command specifies a phase adjustment operation, to be performed by the IC memory device, in an intervening time between receipt of the read command by the IC memory device and the IC memory device outputting data accessed in response to receiving the read command. The internal clock circuitry is disabled after outputting the data. A data interface receives the data. A transmitter transmits a timing reference signal to the IC memory device to time outputting of the data by the IC memory device.

Abstract: A memory controller interfaces with one or more memory devices having configurable width data buses and configurable connectivity between data pins of the memory devices and data pins of the memory controller. Upon initialization of the memory devices, the memory controller automatically discovers the connectivity configuration of the one or more memory devices, including both individually selected and jointly selected devices. After discovering connectivity of the connected devices, the memory controller configures the memory devices according to the discovered connectivity and assigns unique addresses to jointly selected devices.

Abstract: Disclosed are techniques for a memory buffer to track access to paged regions of a memory system at a configurable granularity finer than the size of the paged regions to provide more detailed statistics on memory access. The memory buffer may advertise its capabilities for fine-grained cold page tracking. The memory buffer may receive from the host information to configure a granularity of sub-regions of a paged region and a size of counters used to track access to the sub-regions. The memory buffer may track access requests to the sub-regions using the counters and to provide information on sub-region tracking to the host to identify individual hot or cold sub-regions. The host may make migration decisions for the paged regions with more granular information such as compaction of sub-regions to create a cold page or to treat each sub-region as a separately compressible entity to compress a mostly cold page.

Abstract: Described is an integrated circuit with a driving amplifier that transmits a signal over a link (e.g. a wire) by raising and lowering a voltage on the link. A reference oscillator provides an error measure for the rate at which the voltage transitions between voltages, the slew rate. Slew-rate calibration circuitry adjusts the driving amplifier responsive to the error measure.

Abstract: A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The memory controller also comprises an acknowledgement interface to receive an acknowledgment status packet from the plurality of memory devices over a shared acknowledgement link coupled between the memory controller and the plurality of memory devices, the acknowledgement status packet indicating whether the command was received by the plurality of memory devices. In addition, the memory controller comprises a memory controller core to decode the acknowledgment status packet to identify a portion of the acknowledgement status packet corresponding to each of the plurality of memory devices.

Abstract: A system includes a memory system comprising a near memory component and a far memory component, and a processing device coupled to the memory system. The processing device is configured to track, using a plurality of Bloom filters, respective access requests directed to a plurality of memory pages stored in the memory system. The processing device is further configured to identify, based on weighted results of respective queries of the plurality of Bloom filters, a subset of the plurality of memory pages having a data temperature that satisfies a threshold condition, and cause the subset of the plurality of memory pages to be stored in the near memory component. The identified subset can optionally be applied to a second stage of Bloom filters to further refine the result.

Abstract: A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.

Abstract: A memory controller includes a request queue and associated logic for efficiently managing the request queue based on various timing constraints of the memory device. A single request queue for the memory device stores read and write requests spanning different banks of the memory device. In each memory controller cycle, selection logic may select both a row request and a column request (relating to a different bank than the row request) for issuing to the memory device based on a set of timing status bits. Following issuance of requests, the memory controller updates the queue to maintain the queued requests in a time-ordered, compressed sequence. The memory controller furthermore updates the timing status bits that are used by the selection logic to select requests from the queue based on a history of past memory requests.

Abstract: Technologies for providing write protection to an integrated circuit memory device are described. The integrated circuit memory device has an input port to receive write data and command data and a read data output port to send read data. A device includes a write protection mechanism to prevent write data from being written to a memory core. The write protection mechanism can mask the write data or abort a write operation in response to activation. The write protection mechanism can be activated in response to an error detected by a serial data buffer (SDB) device coupled to the integrated circuit memory device.

Abstract: A dynamic random access memory (DRAM) device includes functions configured to aid with operating the DRAM device as part of data caching functions. The DRAM is configured to respond to at least two types of commands. A first type of command (cache data access command) seeks to access a cache line of data, if present in the DRAM cache. A second type of command (cache probe command) seeks to determine whether a cache line of data is present, but is not requesting the data be returned in response. In response to these types of access commands, the DRAM device is configured to receive cache tag query values and to compare stored cache tag values with the cache tag query values. A hit/miss (HM) interface/bus may indicate the result of the cache tag compare and stored cache line status bits to a controller.

Abstract: A memory module comprises an address buffer circuit, a command/address channel, and a plurality of memory components controlled by the address buffer circuit via the command/address channel. At least one memory component comprises a plurality of data ports, a memory core to store data, and a data interface. The data interface is capable of transferring data between the memory core and the data ports. The data interface supports a first data width mode in which the data interface transfers data at a first bit width and a first burst length via the data ports. The data interface also supports a second data width mode in which the data interface transfers data at a second bit width and second burst length via the data ports. The first bit width is greater than the second bit width and the first burst length is shorter than the second burst length.