Abstract: Disclosed is a system where indicators of the relative phase differences between combinations of clocks in a multi-phase clock system are developed and/or measured. These indicators convey information regarding which phase difference between a given pair of the clocks is greater than (or less than) the phase difference between another pair of the clocks. This information is used to sort/rank/order phase differences between the various combinations of pairs of clocks according to their phase differences. This ranking is used to select the pair of clocks to be adjusted.

Abstract: Processing elements include interfaces that allow direct access to memory banks on one or more DRAMs in an integrated circuit stack. These additional (e.g., per processing element) direct interfaces may allow the processing elements to have direct access to the data in the DRAM stack. Based on the size/type of operands being processed, and the memory bandwidth of the direct interfaces, rate calculation circuitry on the processor die determines the speed each processing element and/or processing nodes within each processing element are operated.

Abstract: The described embodiments provide a system for controlling an integrated circuit memory device by a memory controller. During operation, the system sends a memory-access request from the memory controller to the memory device using a first link. After sending the memory-access request, the memory controller sends to the memory device a command that specifies performing a timing-calibration operation for a second link. The system subsequently transfers data associated with the memory-access request using the second link, wherein the timing-calibration operation occurs between sending the memory-access request and transferring the data associated with the memory-access request.

Abstract: Semiconductor devices, packaging architectures and associated methods are disclosed. In one embodiment, a semiconductor device is disclosed. The semiconductor device includes a first semiconductor die having a first bonding surface that is formed with a first set of contacts patterned with a first connection pitch. A second semiconductor die has a second bonding surface that is formed with a second set of contacts patterned with a second connection pitch. The second set of contacts are further patterned with a paired offset. The second semiconductor die is bonded to the first semiconductor die such that the first set of contacts is disposed in opposed electrical engagement with at least a portion of the second set of contacts.

Abstract: A memory controller generates error codes associates with write data and a write address and provides the error codes over a dedicated error detection code link to a memory device during a write operation. The memory device performs error detection, and in some cases correction, on the received write data and write address based on the error codes. If no uncorrectable errors are detected, the memory device furthermore stores the error codes in association with the write data. On a read operation, the memory device outputs the error codes over the error detection code link to the memory controller together with the read data. The memory controller performs error detection, and in some cases correction, on the received read data based on the error codes.

Abstract: Data and error correction information may involve accessing multiple data channels (e.g., 8) and one error detection and correction channel concurrently. This technique requires a total of N+1 row requests for each access, where N is the number of data channels (e.g., 8 data row accesses and 1 error detection and correction row access equals 9 row accesses.) A single (or at least less than N) data channel row may be accessed concurrently with a single error detection and correction row. This reduces the number of row requests to two (2)—one for the data and one for the error detection and correction information. Because, row requests consume power, reducing the number of row requests is more power efficient.

Abstract: A method of operation in an integrated circuit (IC) memory device is disclosed. The method includes refreshing a first group of storage rows in the IC memory device at a first refresh rate. A retention time for each of the rows is tested. The testing for a given row under test includes refreshing at a second refresh rate that is slower than the first refresh rate. The testing is interruptible based on an access request for data stored in the given row under test.

Abstract: A system and method are directed to providing a configurable timing control of a memory system. In one embodiment, the system has a first interface to receive a DIMM clock and configuration information, a second interface to a first data bus, and a third interface to a second data bus. The system further has a plurality of flip-flops, a multiplexor coupled to the plurality of flip-flops, a first control block for controlling to hold an input data within the plurality of flipflops, and a second control block for controlling a timing of an output data from the plurality of flip-flops via the multiplexor with a programmable delay. The input data is received via the second interface. The programmable delay is received via the first interface. The output data is sent out with the timing delay via the third interface.

Abstract: A memory component and a controller communicate commands and data with each other The commands to activate and then access data, and the data itself, are all communicated between a controller and the memory component at different times. The controller and memory component each calculate a respective error detecting code (EDC) values on the activate command information (e.g., bank address and row address) and store them indexed by the bank address. When the memory component is accessed, retrieved EDC values are combined with EDC values calculated from the access command information, and the data itself. The memory component transmits its combined EDC value to the controller for checking.

Abstract: Memory devices and a memory controller that controls such memory devices. Multiple memory devices receive commands and addresses on a command/address (C/A) bus that is relayed point-to-point by each memory device. Data is received and sent from these devices to/from a memory controller in a point-to-point configuration by adjusting the width of each individual data bus coupled between the individual memory devices and the memory controller. Along with the C/A bus are clock signals that are regenerated by each memory device and relayed. The memory controller and memory devices may be packaged on a single substrate using package-on-package technology. Using package-on-package technology allows the relayed C/A signals to connect from memory device to memory device using wire bonding. Wirebond connections provide a short, high-performance signaling environment for the chip-to-chip relaying of the C/A signals and clocks from one memory device to the next in the daisy-chain.

Abstract: Push-pull integrated circuit output drivers may interfere with communication by other entities on a bus when an integrated circuit is powered down. When there is no power and/or when the bonding pad is externally driven above the internal supply voltage, the substrate/body/well of the p-channel field effect transistor (PFET) of the output driver is biased to prevent its drain diode from becoming forward biased thereby preventing interference with communication on the bus. Also, when there is no power, driver is powered down or pull up is disabled, the gate of the driver PFET is driven to a voltage that ensures the driver PFET remains off when the bonding pad is externally driven above the internal supply voltage.

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory component is disclosed that includes a memory core, a primary interface, and a secondary interface. The primary interface includes data input/output (I/O) circuitry and control/address (C/A) input circuitry, and accesses the memory core during a normal mode of operation. The secondary interface accesses the memory core during a fault mode of operation.

Abstract: The disclosed embodiments relate to a system that supports dynamic bursts to facilitate frequency-agile communication between a memory controller and a memory device. During operation, the system monitors a reference clock signal received at an interface between the memory device and the memory controller. Upon detecting a frequency change in the reference clock signal from a fullrate to a subrate, the interface operates in a burst mode, wherein data is communicated through bursts separated by intervening low-power intervals during which portions of the interface are powered down.

Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.

Abstract: A memory module includes a plurality of memory integrated circuit (IC) packages to store data and a command buffer IC to buffer one or more memory commands destined for the memory IC packages. The command buffer IC includes a first interface circuit and one or more second interface circuits. The first interface circuit receives the one or more memory commands. The one or more second interface circuits output a pre-programmed command sequence to one or more devices separate from the command buffer IC, the pre-programmed command sequence output in response to the one or more memory commands matching a pre-programmed reference command pattern.

Abstract: In a modular memory system, a memory control component, first and second memory sockets and data buffer components are all mounted to the printed circuit board. The first and second memory sockets have electrical contacts to electrically engage counterpart electrical contacts of memory modules to be inserted therein, and each of the data buffer components includes a primary data interface electrically coupled to the memory control component, and first and second secondary data interfaces electrically coupled to subsets of the electrical contacts within the first and second memory sockets, respectively.

Abstract: Multiple independent point-to-point memory channels are operated, by at least one controller, in parallel to form a wider memory channel. The memory components on these point-to-point channels include the ability to connect to multiple (e.g., 2) instances of these independent memory channels. The controller operates multiple instances of the wider channels with the memory components configured in a clamshell mode. A single memory component is also operated in clamshell mode to provide error correction code information, independently of the other wider channels, to multiple instances of the wider memory channel.

Abstract: A lateral transfer path within an adjustable-width signaling interface of an integrated circuit component is formed by a chain of logic segments that may be intercoupled in different groups to effect the lateral data transfer required in different interface width configurations, avoiding the need for a dedicated transfer path per width configuration and thereby substantially reducing number of interconnects (and thus the area) required to implement the lateral transfer structure.

Abstract: A block of dynamic memory in a DRAM device is organized to share a common set of bitlines may be erased/destroyed/randomized by concurrently activating multiple (or all) of the wordlines of the block. The data held in the sense amplifiers and cells of an active wordline may be erased by precharging the sense amplifiers and then writing precharge voltages into the cells of the open row. Rows are selectively configured to either be refreshed or not refreshed. The rows that are not refreshed will, after a time, lose their contents thereby reducing the time interval for attack. An external signal can cause the isolation of a memory device or module and initiation of automatic erasure of the memory contents of the device or module using one of the methods disclosed herein. The trigger for the external signal may be one or more of temperature changes/conditions, loss of power, and/or external commands from a controller.

Abstract: Embodiments generally relate to integrated circuit devices having through silicon vias (TSVs). In one embodiment, an integrated circuit (IC) device includes a field of TSVs and an address decoder that selectably couples at least one of the TSVs to at least one of a test input and a test evaluation circuit. In another embodiment, a method includes selecting one or more TSVs from a field of TSVs in at least one IC device, and coupling each selected TSV to at least one of a test input and a test evaluation circuit.