Abstract: A signaling system is described. The signaling system comprises a transmit device, a receive device including a partial response receive circuit, and a signaling path coupling the transmit device and the receive device. The receive device observes an equalized signal from the signaling path, and includes circuitry to use feedback from the most recent previously resolved symbol to sample a currently incoming symbol. The transmit device equalizes transmit data to transmit the equalized signal, by applying weighting based on one or more data values not associated with the most recent previously resolved symbol value.

Abstract: One or more neural network layers are implemented by respective sets of signed multiply-accumulate units that generate dual analog result signals indicative of positive and negative product accumulations, respectively. The two analog result signals and thus the positive and negative product accumulations are differentially combined to produce a merged analog output signal that constitutes the output of a neural node within the subject neural network layer.

Abstract: A memory component internally generates and stores the check bits of error detect and correct code (EDC). In a first mode, during a read transaction, the check bits are sent to the memory controller along with the data on the data mask (DM) signal lines. In a second mode, an unmasked write transaction is defined where the check bits are sent to the memory component on the data mask signal lines. In a third mode, a masked write transaction is defined where at least a portion of the check bits are sent from the memory controller on the data signal lines coincident with an asserted data mask signal line. By sending the check bits along with the data, the EDC code can be used to detect and correct errors that occur between the memory component and the memory controller.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: A memory system includes an address mapping circuit. The address mapping circuit receives an input memory address having a first set of address bits. The address mapping circuit applies a logic function to the input memory address to generate a mapped memory address. The logic function uses at least a subset of the first set of address bits in two separate operations that respectively determine two portions of the mapped memory address.

Abstract: An intergrated circuit (IC) chip includes receiver circuitry to receive signals from a second IC chip. The receiver circuitry includes equalization circuitry having at least one tap to equalize the signals. The equalization circuitry includes a tap weight adapter circuit to generate at least one tap weight corresponding to the at least one tap based on edge information of previously received signals.

Abstract: A combinational logic circuit includes input circuitry to receive a first and second input signals that transition between supply voltages of first and second voltage domain, respectively. The input circuitry generates, based on the first and second input signals, a first internal signal that transitions between one of the supply voltages of the first voltage domain and one of the supply voltages of the second voltage domain. Output circuitry within the combinational logic circuit generates an output signal that transitions between the upper and lower supply voltages of the first voltage domain in response to transition of the first internal signal.

Abstract: A memory module includes a substrate, plural memory devices, and a buffer. The plural memory devices are organized into at least one rank, each memory device having plural banks. The buffer includes a primary interface for communicating with a memory controller and a secondary interface coupled to the plural memory devices. For each bank of each rank of memory devices, the buffer includes data buffer circuitry and address buffer circuitry. The data buffer circuitry includes first storage to store write data transferred during a bank cycle interval (tRR). The address buffer circuitry includes second storage to store address information corresponding to the data stored in the first storage.

Abstract: Bandwidth for information transfers between devices is dynamically changed to accommodate transitions between power modes employed in a system. The bandwidth is changed by selectively enabling and disabling individual control links and data links that carry the information. During a highest bandwidth mode for the system, all of the data and control links are enabled to provide maximum information throughout. During one or more lower bandwidth modes for the system, at least one data link and/or at least one control link is disabled to reduce the power consumption of the devices. At least one data link and at least one control link remain enabled during each low bandwidth mode. For these links, the same signaling rate is used for both bandwidth modes to reduce latency that would otherwise be caused by changing signaling rates. Also, calibration information is generated for disabled links so that these links may be quickly brought back into service.

Abstract: A receiver samples an analog, multi-level, pulse-amplitude-modulated signal using a clock-and-data recovery circuit (CDR) that samples the signal against adaptively calibrated symbol-decision thresholds in time with a clock signal that is phased aligned with and locked to the signal. The CDR can erroneously align the clock signal to inter-symbol edges of the signal, a condition called “edge lock,” rather than on the symbols themselves. A transition-type detector senses the edge-lock condition and unlocks the CDR, which can then realign the clock signal, this time on the symbols rather than the inter-symbol edges. The receiver can also respond to the edge-lock condition by kick-starting a shift of symbol-decision threshold that helps the CDR settle more quickly on correct symbol-decision thresholds.

Abstract: A multi-rank memory system in which calibration operations are performed between a memory controller and one rank of memory while data is transferred between the controller and other ranks of memory. A memory controller performs a calibration operation that calibrates parameters pertaining to transmission of data via a first data bus between the memory controller and a memory device in a first rank of memory. While the controller performs the calibration operation, the controller also transfers data with a memory device in a second rank of memory via a second data bus.

Abstract: A dual-loop analog to digital converter (ADC) includes an asynchronous inner loop including first and second comparators and a state machine, where outputs of the first and second comparators are coupled to inputs of the state machine, and where outputs of the state machine are cross-coupled to enable ports of the first and second comparators. The ADC includes a synchronous outer loop including a successive approximation register (SAR), a digital to analog converter (DAC), and the first and second comparators, where the outputs of the first and second comparators are coupled to inputs of the SAR, an N-bit output of the SAR is coupled to an N-bit input of the DAC, and a differential output of the DAC is coupled to inputs of the first and second comparators, where a state of the state machine is independent of the state of the SAR.

Abstract: A memory module having reduced access granularity. The memory module includes a substrate having signal lines thereon that form a control path and first and second data paths, and further includes first and second memory devices coupled in common to the control path and coupled respectively to the first and second data paths. The first and second memory devices include control circuitry to receive respective first and second memory access commands via the control path and to effect concurrent data transfer on the first and second data paths in response to the first and second memory access commands.

Abstract: A receiver includes a continuous-time equalizer, a decision-feedback equalizer (DFE), data and error sampling logic, and an adaptation engine. The receiver corrects for inter-symbol interference (ISI) associated with the most recent data symbol (first post cursor ISI) by establishing appropriate equalization settings for the continuous-time equalizer based upon a measure of the first-post-cursor ISI.

Abstract: An IC memory controller includes a first controller command/address (C/A) interface to transmit first and second read commands for first and second read data to a first memory C/A interface of a first bank group of memory. A second command/address (C/A) interface transmits third and fourth read commands for third and fourth read data to a second memory C/A interface of a second bank group of memory. For a first operating mode, the first and second read data are received after respective first delays following transmission of the first and second read commands and at a first serialization ratio. For a second operating mode, the first and second read data are received after respective second and third delays following transmission of the first and second read commands. The second and third delays are different from the first delays and from each other. The first and second data are received at a second serialization ratio that is different than the first serialization ratio.

Abstract: This disclosure provides a split-path equalizer and a clock recovery circuit. More particularly, clock recovery operation is enhanced, particularly at high-signaling rates, by separately equalizing each of a data path and an edge path. In specific embodiments, the data path is equalized in a manner that maximizes signal-to-noise ratio and the edge path is equalized in a manner that emphasizes symmetric edge response for a single unit interval and zero edge response for other unit intervals (e.g., irrespective of peak voltage margin). Such equalization tightens edge grouping and thus enhances clock recovery, while at the same time optimizing data-path sampling. Techniques are also disclosed for addressing split-path equalization-induced skew.

Abstract: A memory module includes cache of relatively fast and durable dynamic, random-access memory (DRAM) in service of a larger amount of relatively slow and wear-sensitive nonvolatile memory. Local controller manages communication between the DRAM cache and nonvolatile memory to accommodate disparate access granularities, reduce the requisite number of memory transactions, and minimize the flow of data external to nonvolatile memory components.

Abstract: The disclosed embodiments relate to a system that supports dynamic bursts to facilitate frequency-agile communication between a memory controller and a memory device. During operation, the system monitors a reference clock signal received at an interface between the memory device and the memory controller. Upon detecting a frequency change in the reference clock signal from a fullrate to a subrate, the interface operates in a burst mode, wherein data is communicated through bursts separated by intervening low-power intervals during which portions of the interface are powered down.

Abstract: An integrated circuit includes a delay circuit and first and second interface circuits. The delay circuit delays a first timing signal by an internal delay to generate an internal timing signal. The first interface circuit communicates data to an external device in response to the internal timing signal. The second interface circuit transmits an external timing signal for capturing the data in the external device. An external delay is added to the external timing signal in the external device to generate a delayed external timing signal. The delay circuit sets the internal delay based on a comparison between the delayed external timing signal and a calibration signal transmitted by the first interface circuit.

Abstract: Periodic signal timing calibration is implemented in time-distributed fragments executed concurrently with occasional system-idling maintenance operations to maintain reliable synchronous communication between interconnected system components without impacting system availability.