Abstract: Disclosed are techniques for a power management integrated circuit (PMIC) to support a power-up sequence from a powered-down state to a powered-up state when both a main supply voltage and a backup supply voltage are present or when only the backup supply voltage is present. The PMIC may monitor the two supply voltages to identify the supply voltages that are present. The PMIC may be configured with a power-up initialization mode of operation through an EFUSE/MTP register, including a first bit to control power up of a voltage regulator of the PMIC with the main supply voltage or the backup supply voltage. Another bit may control power up of the voltage regulator with the backup supply voltage in the dual-supply or the single-supply configuration. The PMIC may execute one of four power-up sequences based on the monitored status of the supply voltages and the configured power-up initialization mode of operation.

Abstract: Memory pages are background-relocated from a low-latency local operating memory of a server computer to a higher-latency memory installation that enables high-resolution access monitoring and thus access-demand differentiation among the relocated memory pages. Higher access-demand memory pages are background-restored to the low-latency operating memory, while lower access-demand pages are maintained in the higher latency memory installation and yet-lower access-demand pages are optionally moved to yet higher-latency memory installation.

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory system is disclosed. The memory system includes volatile memory configured as a cache. The cache stores first data at first storage locations. Backing storage media couples to the cache. The backing storage media stores second data in second storage locations corresponding to the first data. Logic uses a presence or status of first data in the first storage locations to cease maintenance operations to the stored second data in the second storage locations.

Abstract: A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.

Abstract: System and method for training and performing operations (e.g., read and write operations) on a double buffered memory topology. In some embodiments, eight DIMMs are coupled to a single channel. The training and operations schemes are configured with timing and signaling to allow training and operations with the double buffered memory topology. In some embodiments, the double buffered memory topology includes one or more buffers on a system board (e.g., motherboard).

Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) dynamic random access memory (DRAM) device is disclosed. The IC DRAM device includes memory core circuitry organized into bank groups of storage cells, each bank group accessible via a corresponding bank group address. A command/address (C/A) interface receives C/A information defining a joint command. The joint command includes information specifying a first memory access operation, a first bank group address associated with the first memory access operation, and a second memory access operation to be automatically directed to the first bank group address.

Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

Abstract: A hybrid volatile/non-volatile memory module employs a relatively fast, durable, and expensive dynamic, random-access memory (DRAM) cache to store a subset of data from a larger amount of relatively slow and inexpensive nonvolatile memory (NVM). A module controller prioritizes accesses to the DRAM cache for improved speed performance and to minimize programming cycles to the NVM. Data is first written to the DRAM cache where it can be accessed (written to and read from) without the aid of the NVM. Data is only written to the NVM when that data is evicted from the DRAM cache to make room for additional data. Mapping tables relating NVM addresses to physical addresses are distributed throughout the DRAM cache using cache line bits that are not used for data.

Abstract: A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.

Abstract: A multi-processor device is disclosed. The multi-processor device includes interface circuitry to receive requests from at least one host device. A primary processor is coupled to the interface circuitry to process the requests in the absence of a failure event associated with the primary processor. A secondary processor processes operations on behalf of the primary processor and selectively receives the requests from the interface circuitry based on detection of the failure event associated with the primary processor.

Abstract: A memory component internally generates and stores the check bits of error detect and correct code (EDC). In a first mode, during a read transaction, the check bits are sent to the memory controller along with the data on the data mask (DM) signal lines. In a second mode, an unmasked write transaction is defined where the check bits are sent to the memory component on the data mask signal lines. In a third mode, a masked write transaction is defined where at least a portion of the check bits are sent from the memory controller on the data signal lines coincident with an asserted data mask signal line. By sending the check bits along with the data, the EDC code can be used to detect and correct errors that occur between the memory component and the memory controller.

Abstract: Multiple (e.g., two) hosts access a single memory channel (and/or device) via a memory controller. The single memory channel/device can support at most one access at a time. To reduce contention between the multiple hosts, the memory controller comprises multiple (e.g., two), independent, host ports. Each host port is associated with a write buffer(s) in the memory controller that stores write data at least until the memory controller writes the data to the memory channel. Data stored in a write buffer may be used to respond to memory access commands (e.g., reads or writes) on the ports without accessing the memory channel. In this manner, the hosts do not directly contend with each other for the single memory channel or the memory controller.

Abstract: A memory module includes a substrate, plural memory devices, and a buffer. The plural memory devices are organized into at least one rank, each memory device having plural banks. The buffer includes a primary interface for communicating with a memory controller and a secondary interface coupled to the plural memory devices. For each bank of each rank of memory devices, the buffer includes data buffer circuitry and address buffer circuitry. The data buffer circuitry includes first storage to store write data transferred during a bank cycle interval (tRR). The address buffer circuitry includes second storage to store address information corresponding to the data stored in the first storage.

Abstract: The described embodiments provide a system for controlling an integrated circuit memory device by a memory controller. During operation, the system sends a memory-access request from the memory controller to the memory device using a first link. After sending the memory-access request, the memory controller sends to the memory device a command that specifies performing a timing-calibration operation for a second link. The system subsequently transfers data associated with the memory-access request using the second link, wherein the timing-calibration operation occurs between sending the memory-access request and transferring the data associated with the memory-access request.

Abstract: A memory system includes a memory controller, a plurality of serial data buffers, and a plurality of memory devices. The memory controller issues packetized commands and data to the serial data buffers. The serial data buffers each apply a different remapping function to remap an input command address in the packetized commands to respective remapped memory addresses that are different for each serial data buffer. The serial data buffers then issue commands to the memory devices using the remapped addresses. The remapping functions may be designed to mitigate row hammer effects. The serial data buffers may furthermore apply transformations to read and write data to facilitate encryption and decryption.

Abstract: The disclosed embodiments relate to a computer system with a cache memory that supports tagless addressing. During operation, the system receives a request to perform a memory access, wherein the request includes a virtual address. In response to the request, the system performs an address-translation operation, which translates the virtual address into both a physical address and a cache address. Next, the system uses the physical address to access one or more levels of physically addressed cache memory, wherein accessing a given level of physically addressed cache memory involves performing a tag-checking operation based on the physical address. If the access to the one or more levels of physically addressed cache memory fails to hit on a cache line for the memory access, the system uses the cache address to directly index a cache memory, wherein directly indexing the cache memory does not involve performing a tag-checking operation and eliminates the tag storage overhead.

Abstract: Multiple device stacks are interconnected in a ring topology. The inter-device stack communication may utilize a handshake protocol. This ring topology may include the host so that the host may initialize and load the device stacks with data and/or commands (e.g., software, algorithms, etc.). The inter-device stack interconnections may also be configured to include/remove the host and/or to implement varying numbers of separate ring topologies. By configuring the system with more than one ring topology, and assigning different problems to different rings, multiple, possibly unrelated, machine learning tasks may be performed in parallel by the device stack system.

Abstract: A method of operating a memory controller is disclosed. The method includes transmitting data signals to a memory device over each one of at least two parallel data links. A timing signal is sent to the memory device on a first dedicated link. The timing signal has a fixed phase relationship with the data signals. A data strobe signal is driven to the memory device on a second dedicated link. Phase information is received from the memory device. The phase information being generated internal to the memory device and based on a comparison between the timing signal and a version of the data strobe signal internally distributed within the memory device. A phase of the data strobe signal is adjusted relative to the timing signal based on the received phase information.

Abstract: A memory module is disclosed that includes a substrate, a memory device that outputs read data, and a buffer. The buffer has a primary interface for transferring the read data to a memory controller and a secondary interface coupled to the memory device to receive the read data. The buffer includes error logic to identify an error in the received read data and to identify a storage cell location in the memory device associated with the error. Repair logic maps a replacement storage element as a substitute storage element for the storage cell location associated with the error.