Abstract: A transmit circuit can be configured to output two-level pulse amplitude modulation (PAM-2) or four-level pulse amplitude modulation (PAM-4). In the PAM-2 mode, pre-tap feed-forward equalization (FFE) and post-tap FFE can be applied to the PAM-2 signal by pre-taps and post-taps, respectively. In the PAM-4 mode, at least one post-tap is repurposed to generate, along with the main tap, the main PAM-4 signaling levels. At least one PAM-2 FFE tap is repurposed to apply FFE in the PAM-4 mode.

Abstract: A memory-control integrated circuit includes internal data conductors, steering circuitry and distinct first and second data interfaces, the first data interface having twice as many input/output (I/O) transceivers as the second data interface. In a first memory system configuration in which only the first data interface is coupled to a memory module, the steering circuitry couples all the internal data conductors exclusively to the I/O transceivers of the first data interface. In a second memory system configuration in which the first and second data interfaces are coupled to respective memory modules, the steering circuitry couples a first half of the internal data conductors exclusively to the I/O transceivers of the second data interface while a second half of the internal data conductors remains exclusively coupled to half the I/O transceivers of the first data interface.

Abstract: An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.

Abstract: An optical assembly includes a light emitting panel member having opposite sides and at least one input edge for receiving light from at least one light source, and a pattern of individual optical deformities on or in at least one of the sides for producing a light output distribution from a light emitting surface area of the panel member. Different sets of the optical deformities within the pattern each having at least one surface that is shaped or oriented to extract light propagating through the panel member in respective different directions from multiple regions of the light emitting surface area of the panel member.

Abstract: An integrated circuit equalizes a data signal expressed as a series of symbols. The symbols form data patterns with different frequency components. By considering these patterns, the integrated circuit can experiment with equalization settings specific to a subset of the frequency components, thereby finding an equalization control setting that optimizes equalization. Optimization can be accomplished by setting the equalizer to maximize symbol amplitude.

Abstract: A variable injection-strength injection-locked oscillator (ILO) is described. The variable injection-strength ILO can output an output clock signal based on an input clock signal. The variable injection-strength ILO can pause, restart, slow down, or speed up the output clock signal synchronously with respect to the input clock signal in response to receiving power mode information. Specifically, the variable injection-strength ILO can be operated under relatively strong injection when the input clock signal is paused, restarted, slowed down, or sped up.

Abstract: Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.

Abstract: In a PAM-N receiver, sampler reference levels, DC offset and AFE gain may be jointly adapted to achieve optimal or near-optimal boundaries for the symbol decisions of the PAM-N signal. For reference level adaptation, the hamming distances between two consecutive data samples and their in-between edge sample are evaluated. Reference levels for symbol decisions are adjusted accordingly such that on a data transition, an edge sample has on average, equal hamming distance to its adjacent data samples. DC offset may be compensated to ensure detectable data transitions for reference level adaptation.

Abstract: A technique for determining performance characteristics of electronic devices and systems is disclosed. In one embodiment, the technique is realized by measuring a first response on a first transmission line from a single pulse transmitted on the first transmission line, and then measuring a second response on the first transmission line from a single pulse transmitted on at least one second transmission line, wherein the at least one second transmission line is substantially adjacent to the first transmission line. The worst case bit sequences for transmission on the first transmission line and the at least one second transmission line are then determined based upon the first response and the second response for determining performance characteristics associated with the first transmission line.

Abstract: A receiver device implements enhanced data reception with edge-based clock and data recovery such as with a flash analog-to-digital converter architecture. In an example embodiment, the device implements a first phase adjustment control loop, with for example, a bang-bang phase detector, that detects data transitions for adjusting sampling at an optimal edge time with an edge sampler by adjusting a phase of an edge clock of the sampler. This loop may further adjust sampling in received data intervals for optimal data reception by adjusting the phase of a data clock of a data sampler such a flash ADC. The device may also implement a second phase adjustment control loop with, for example, a baud-rate phase detector, that detects data intervals for further adjusting sampling at an optimal data time with the data sampler.

Abstract: In a clock generating circuit having a plurality of injection-locking oscillators, a first one of the injection-locking oscillators is enabled to output a free-running reference clock signal and a control value is generated based at least in part on a frequency relationship between the free-running reference clock signal and an input timing signal. In accordance with the control value, a selected one of the injection-locking oscillators is enabled to generate an output clock signal that is frequency-locked with respect to the input timing signal.

Abstract: Image-sensing devices include odd-symmetry gratings that cast interference patterns over a photodetector array. Grating features offer considerable insensitivity to the wavelength of incident light, and also to the manufactured distance between the grating and the photodetector array. Photographs and other image information can be extracted from interference patterns captured by the photodetector array. Images can be captured without a lens, and cameras can be made smaller than those that are reliant on lenses and ray-optical focusing.

Abstract: A method for operating a DRAM device. The method includes receiving in a memory buffer in a first memory module hosted by a computing system, a request for data stored in RAM of the first memory module from a host controller of the computing system. The method includes receiving with the memory buffer, the data associated with a RAM, in response to the request and formatting with the memory buffer, the data into a scrambled data in response to a pseudo-random process. The method includes initiating with the memory buffer, transfer of the scrambled data into an interface device.

Abstract: A memory system (100B) includes an array of non-volatile memory cells (140) and a memory controller (110) having a first port (port connected to line 101) to receive a program command that addresses a number of the memory cells for a programming operation, having a second port (port connected to lines 102 and 103) coupled to the memory array via a command pipeline, and configured to create a plurality of fractional program commands in response to the program command. Execution of each fractional program command applies a single program pulse to the addressed memory cells to incrementally program the addressed memory cells with program data, where the duration of the program pulse associated with each fractional program command is a selected fraction of the total programming time typically required to program the memory cells.

Abstract: A memory system includes a memory controller with multiple command/address ports and a memory device having corresponding request ports. The memory controller issues commands to memory device to cause the memory device to “loop-back” signals conveyed to memory device over one of the command/address ports via a bidirectional data link; these signals can be deterministic test patterns. The memory controller compares the returned information with the originally transmitted patterns to perform calibration. In one embodiment, because the return links are already calibrated, errors can be attributed to issues in the forward links; the memory controller then adjusts timing of the forward links to minimize the errors.

Abstract: Circuitry capable of performing fractional clock multiplication by using an injection-locked oscillator is described. Some embodiments described herein perform fractional clock multiplication by periodically changing the injection location, from a set of injection locations, where the injection signal is injected and/or by periodically changing a phase, from a set of phases, of the injection signal that is injected into the ILO.

Abstract: A light guide includes opposed major surfaces and a light input edge extending therebetween. An array of micro-optical elements of well-defined shape at at least one of the opposed major surfaces corresponds to the light input edge. Each of the micro-optical elements in the array includes a longitudinal axis arranged within the range of angles relative to the light input edge. A path linearly extending along the light guide from the light input edge intersects at least a portion of the micro-optical elements in the array, at least one of the micro-optical elements along the path arranged with its longitudinal axis at a positive angle relative to the light input edge, and at least another one of the micro-optical elements along the path arranged with its longitudinal axis at a negative angle relative to the light input edge.

Abstract: Disclosed herein are techniques for implementing high-throughput low-latency hybrid memory modules with improved data backup and restore throughput, enhanced non-volatile memory controller (NVC) resource access, and enhanced mode register setting programmability. Embodiments comprise a command replicator to generate sequences of one or more DRAM read and/or write and/or other commands to be executed in response to certain local commands from a non-volatile memory controller (NVC) during data backup and data restore operations. Other embodiments comprise an access engine to enable an NVC in a host control mode to trigger entry into a special mode and issue commands to access a protected register space. Some embodiments comprise a mode register controller to capture and store the data comprising mode register setting commands issued during a host control mode, such that an NVC can program the DRAM mode registers in an NVC control mode.

Abstract: A memory cell includes a first resistive memory element, a second resistive memory element electrically coupled with the first resistive memory element at a common node, and a switching element comprising an input terminal electrically coupled with the common node, the switching element comprising a driver configured to float during one or more operations.

Abstract: A resistance memory includes a resistance memory cell having a resistance memory element and a two-terminal access device in series. The two-terminal access device affects the current-voltage characteristic of the resistance memory cell. The resistance memory additionally includes a circuit to apply across the resistance memory cell a set pulse having a set polarity to set the resistance memory cell to a low-resistance state that is retained after application of the set pulse, a reset pulse having a reset polarity, opposite to the set polarity, to reset the resistance memory cell to a high-resistance state that is retained after application of the reset pulse, and a read pulse of the reset polarity and smaller in magnitude than the reset pulse to determine the resistance state of the resistance memory cell without changing the resistance state of the resistance memory cell.