Abstract: A stacked semiconductor device is disclosed that includes a plurality of semiconductor dies. Each die has oppositely disposed first and second surfaces, with pads formed on each of the surfaces. A plurality of through-vias connect respective pads on the first surface to respective pads on the second surface. The through-vias include a first group of through-vias coupled to respective I/O circuitry on the semiconductor die and a second group of through-vias not coupled to I/O circuitry on the semiconductor die. The plurality of semiconductor dies are stacked such that the first group of through-vias in a first one of the plurality of semiconductor dies are aligned with respective ones of at least a portion of the second group of through-vias in a second one of the plurality of semiconductor dies.

Abstract: In a data processing system, a buffer integrated-circuit (IC) device includes multiple control interfaces, multiple memory interfaces and switching circuitry to couple each of the control interfaces concurrently to a respective one of the memory interfaces in accordance with a path selection value. A plurality of requestor IC devices are coupled respectively to the control interfaces, and a plurality of memory IC devices are coupled respectively to the memory interfaces.

Abstract: A method and apparatus for evaluating and optimizing a signaling system is described. A pattern of test information is generated in a transmit circuit of the system and is transmitted to a receive circuit. A similar pattern of information is generated in the receive circuit and used as a reference. The receive circuit compares the patterns. Any differences between the patterns are observable. In one embodiment, a linear feedback shift register (LFSR) is implemented to produce patterns. An embodiment of the present disclosure may be practiced with various types of signaling systems, including those with single-ended signals and those with differential signals. An embodiment of the present disclosure may be applied to systems communicating a single bit of information on a single conductor at a given time and to systems communicating multiple bits of information on a single conductor simultaneously.

Abstract: The disclosed embodiments related to a clocked memory system which performs a calibration operation at a full-rate frequency to determine a full-rate calibration state that specifies a delay between a clock signal and a corresponding data signal in the clocked memory system. Next, the clocked memory system uses the full-rate calibration state to calculate a sub-rate calibration state, which is associated with a sub-rate frequency (e.g., ½, ¼ or ? of the full-rate frequency). The system then uses this sub-rate calibration state when the clocked memory system is operating at the sub-rate frequency. This calculation of the sub-rate state calibration states eliminates the need to perform an additional time-consuming calibration operation for each sub-rate.

Abstract: A single-ended data transmission system transmits a signal having a signal voltage that is referenced to a power supply voltage and that swings above and below the power supply voltage. The power supply voltage is coupled to a power supply rail that also serves as a signal return path. The signal voltage is derived from two signal supply voltages generated by a pair of charge pumps that draw substantially same amount of current from a power supply.

Abstract: Pixel circuits in an image sensor are sampled repetitively during an image frame period. At each sampling, a signal indicative of the photocharge integrated by a pixel circuit since last reset is compared to a threshold. If the integrated photocharge signal has not reached the threshold, the pixel circuit is permitted to continue integrating photocharge. If the integrated photocharge signal has reached the threshold, the pixel circuit is reset to remove integrated photocharge and photocharge integration for that pixel circuit is restarted. A corresponding pixel circuit value is recorded for the reset pixel circuit.

Abstract: In a first clock frequency multiplier, multiple injection-locked oscillators (ILOs) having spectrally-staggered lock ranges are operated in parallel to effect a collective input frequency range substantially wider than that of a solitary ILO. After each input frequency change, the ILO output clocks may be evaluated according to one or more qualifying criteria to select one of the ILOs as the final clock source. In a second clock frequency multiplier, a flexible-injection-rate injection-locked oscillator locks to super-harmonic, sub-harmonic or at-frequency injection pulses, seamlessly transitioning between the different injection pulse rates to enable a broad input frequency range. The frequency multiplication factor effected by the first and/or second clock frequency multipliers in response to an input clock is determined on the fly and then compared with a programmed (desired) multiplication factor to select between different frequency-divided instances of the frequency-multiplied clock.

Abstract: Integrated circuit devices that operate in different modes. In a low data rate mode, data is transferred between the integrated circuit devices at a low data rate, or no data is transferred at all. In a high data rate mode, data is transferred between integrated circuit devices at a high data rate. A transition mode facilitates the transition from the low data rate mode to the high data rate mode. During the transition mode data is transferred between the integrated circuit devices at an intermediate data rate greater than the low data rate but lower than the high data rate. Also during the transition mode, parameters affecting the transmission of data between the integrated circuit devices are calibrated at the high data rate.

Abstract: Described are integrated-circuit die with differential receivers, the inputs of which are coupled to external signal pads. Termination legs coupled to the signal pads support multiple termination topologies. These termination legs can support adjustable impedances, capacitances, or both, which may be controlled using an integrated memory.

Abstract: The disclosed embodiments relate to the design of a memory system which includes a set of one or more memory modules, wherein each memory module in the set has a clamshell configuration, wherein pairs of opposing memory packages containing memory chips are located on opposite sides of the memory module. The memory system also includes a multi-drop path containing signal lines which pass through the set of memory modules, and are coupled to memory packages in the set of memory modules. For a given signal line in the multi-drop path, a first memory package and a second memory package that comprise a given pair of opposing memory packages are coupled to the given signal line at a first location and a second location, respectively, wherein the first location and the second location are separated from each other by a distance d1 along the given signal line.

Abstract: An IC die transmits command signals, address signals and data signals to a flash memory device at respective times via a time-multiplexed external signaling line, the data signals representing data to be stored within an array of non-volatile storage elements of the flash memory device. The IC die additionally transmits a control signal to the flash memory device via one or more external control signal lines, the control signal directing the flash memory device to switchably couple an on-die termination element to the time-multiplexed signaling line.

Abstract: Configurable, error-tolerant communication of memory control information between components of a memory system. A controller component and memory component each have a variable-width command/address (CA) interface that operates in conjunction with an error detection/correction (EDC) channel to enable a variable level of error detection and correction with respect to command/address information conveyed between the two components as the widths of the CA interfaces are adjusted.

Abstract: In a memory system in which a system clock signal is forwarded from the memory controller to multiple memory devices, the phase of the system clock signal forwarded to the slower memory device is advanced relative to the system clock signal forwarded to the faster memory device by a phase corresponding to the skew on the data links corresponding to the memory devices. This causes the state machine of the slower memory device to change states and advance earlier than the state machine in the faster memory device, and as a result, the data read from both the slower memory device and the faster memory device are unskewed on the data links between the memory controller and the memory devices.

Abstract: Row activation operations within a memory component are carried out with respect to subrows instead of complete storage rows to reduce power consumption. Further, instead of activating subrows in response to row commands, subrow activation operations are deferred until receipt of column commands that specify the column operation to be performed and the sub-row to be activated.

Abstract: An integrated circuit device includes a transmitter circuit including an output driver. The integrated circuit device includes a first register to store a value representative of a drive strength setting associated with the transmitter circuit such that the output driver outputs data in accordance with the drive strength setting. The integrated circuit device also includes a second register to store a value representative of an equalization setting associated with the transmitter circuit such that the output driver outputs data in accordance with the equalization setting. The integrated circuit device further includes a third register to store a value representative of a slew rate setting associated with the transmitter circuit such that the output driver outputs data in accordance with the slew rate setting.

Abstract: A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.

Abstract: A lighting assembly includes a light guide and solid-state light emitters to edge-light the light guide, the light emitters arrayed along a transverse direction. The light guide includes two or more sets of optical elements of well-defined shape. Light output from the lighting assembly by the first and second set of optical elements have a first and a second light ray angle distribution, respectively. The optical elements are configured such that when measured in a plane perpendicular to the light guide and the transverse direction: 1) the first and second light ray angle distributions are significantly narrower than an omnidirectional output distribution; and 2) the peak of the second light ray angle distribution is displaced from the peak of the first light ray angle distribution.

Abstract: Methods and systems for increasing the effective dynamic range of an image sensor are disclosed. Each pixel in the sensor is exposed for a respective first exposure time. Each pixel's response to the respective first exposure is measured and compared to threshold values. Based on the pixel's response to the respective first exposure time, an optimal exposure is calculated for each pixel. The optimal exposure time is applied to each pixel by utilizing row-enabled and column-enabled signals at each pixel within the sensor.

Abstract: A lighting assembly includes a light guide and light source. The light guide includes light input regions, at least one of the light input regions associated with an optical modifying characteristic, and the light guide is configured to propagate light by total internal reflection. The light source is located adjacent the light input regions. The light source and light input regions are variably positionable relative to one another to vary a location at which light is incident on the light input regions such that light emitted from the light source is selectively apportioned between the light input regions. A characteristic of the light output from the lighting assembly is modified based on the optical modifying characteristic of the at least one of the light input regions and the relative positioning of the light source and the light input regions.

Abstract: A memory module having integrated circuit (IC) components, a termination structure, an address/control signal path, a clock signal path, multiple data signal paths and multiple strobe signal paths. The strobe signal paths and data signal paths are coupled to respective IC components, and the address/control signal path and clock signal path are coupled in common to all the IC components. The address/control signal path extends along the IC components to the termination structure such that control signals propagating toward the termination structure arrive at address/control inputs of respective IC components at progressively later times corresponding to relative positions of the IC components.