Abstract: A transpolarizer is employed as a programmable capacitance divider. Two ferroelectric capacitors are coupled in series to form a common node and two extreme poles. The polarization of the two capacitors is set by grounding the two poles and then bringing them both up to VCC while impressing a voltage at the common node corresponding to data to be stored. Later, while one pole is held at VSS, the other pole is pulsed from VSS to VCC with the common node floating. A voltage develops at the common node which is above or below the midpoint between VSS and VCC, and will be indicative of the stored data. The capacitance divider is programmed in accordance with data. One such divider is added to a DRAM memory cell to form a shadow DRAM cell. Two such dividers are added to a static RAM memory cell to form a shadow static RAM cell. The same divider arrangement is operable in both volatile and non-volatile modes. An improvement arises by using PZT as dielectric in 54:46 mole ratio.

Abstract: A memory cell includes an SRAM flip-flop cell having two nodes coupled to ferroelectric capacitors so that when the SRAM is powered down, the ferroelectric devices store data and upon power up, transfer the stored data to the SRAM cell. The ferroelectric devices can be bypassed during normal SRAM operations to reduce hysteresis fatigue.

Abstract: A wristwatch contains communication and memory circuitry and a transmitter. The memory circuit stores a personal identification number of a single user. The communication and memory circuitry is driven by the same battery which powers the timekeeping structure of the watch. A transmitter transmits data from the reader to the wristwatch, placed proximate thereto. The reader has a keypad by which the user can enter a personal identification number, and the watch compares the transmitted number to the user-entered number. If the numbers match, a transaction may occur.

Abstract: Methods for forming targets of ferroelectric, metal nitrate or similar material, methods for depositing such materials using ion beam techniques, and a method for forming a combined and integrated circuit/ferroelectric memory device wherein the ferroelectric material is deposited using ion beam techniques.

Abstract: A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferrelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 5,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.