Patents Assigned to RAYMX MICROELECTRONICS CORP.
  • Patent number: 10776011
    Abstract: A computing system including a memory, a processor and a solid state disk is provided. The memory stores a disk access driver program. The solid state disk includes a storage circuit and a control circuit. The control circuit includes a processing unit, a first access path and a second access path. The processing unit communicates with the processor through the first access path. The processor executes the driver program that enables the processor to process a disk access command for directly accessing the storage circuit of the solid state disk through the second access path.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: September 15, 2020
    Assignee: RAYMX MICROELECTRONICS CORP.
    Inventors: Cheng-Yu Chen, Chih-Ching Chien, Yen-Chung Chen
  • Patent number: 10714187
    Abstract: A memory control device includes a memory and a controller. The memory includes a plurality of memory blocks. The controller is coupled to the memory and configured to select a first memory block from the memory blocks and program data into the first memory block. When the memory control device is deactivated and re-activated, the controller is further configured to read a voltage distribution of the first memory block to determine a deactivation interval, and determine a reference time according to the deactivation interval and an initial time, and the voltage distribution of the first memory block correspond to the data.
    Type: Grant
    Filed: November 11, 2019
    Date of Patent: July 14, 2020
    Assignee: RAYMX MICROELECTRONICS CORP.
    Inventors: Yi-Lin Hsieh, Jing-Long Xiao, Cheng-Yu Chen, Wang-Sheng Lin
  • Patent number: 10712970
    Abstract: The present invention provides a flash memory controller including an artificial intelligence (AI) module and a microprocessor. In the operations of the flash memory controller, the AI module receives data from a host device, and determines if the data is important data or unimportant data to generate a determination result. The microprocessor is configured to write the data into a flash memory module according to the determination result, wherein the flash memory module comprises a plurality of first blocks and a plurality of second blocks, and quantity of bits stored in each memory cell within the first blocks is lower than quantity of bits stored in each memory cell within the second blocks. When the determination result indicates that the data is the important data, the microprocessor only stores the data into at least one of the first blocks.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: July 14, 2020
    Assignee: RAYMX MICROELECTRONICS CORP.
    Inventors: Wen-Hsin Chang, Yen-Chung Chen, Wei-Ren Hsu, Yufeng Zhou
  • Patent number: 10705743
    Abstract: A method for generating a security feature of a flash memory includes determining a memory block from a plurality of memory blocks in the flash memory; erasing data of the determined memory block of the flash memory; providing a predetermined voltage to the determined memory block to obtain a plurality of corresponding threshold voltages of a plurality of cells in the determined memory block, wherein each of the corresponding threshold voltages corresponds to a characteristic of each cell in the determined memory block; and establishing a security feature based on the plurality of corresponding threshold voltages.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: July 7, 2020
    Assignee: RAYMX MICROELECTRONICS CORP.
    Inventors: Shih-Fu Huang, Cheng-Yu Chen, Yi-Lin Hsieh, Jing-Long Xiao
  • Patent number: 10672499
    Abstract: A flash memory controller is suitable for a NAND flash memory and a voltage supply circuit. The voltage supply circuit supplies a current to the flash memory. The flash memory controller includes a flash control circuit, a current sensing circuit, and a processor. The flash control circuit is configured to control an operation of the flash memory. The current sensing circuit is configured to measure the current consumed by the flash memory during its operation, and output a current value. The processor is configured to output a control signal based on the current value. Therefore, the flash memory controller can instantly obtain a current value consumed during the operation of flash memory, and determine, based on the current value, whether the flash memory runs normally. A storage apparatus having the flash memory controller can instantly determine whether the flash memory runs normally.
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: June 2, 2020
    Assignee: RAYMX MICROELECTRONICS CORP.
    Inventors: Shih-Fu Huang, Shu-Min Lin, Jo-Hua Wu, Cheng-Yu Chen
  • Patent number: 10594366
    Abstract: A data storage device includes a power line communication (PLC) circuit and a storage controller. The PLC circuit is coupled to a power line. The storage controller is coupled to the PLC circuit. The storage controller is configured to access a plurality of memory block. The PLC circuit is configured to carry at least one signal outputted from the storage controller on the power line, in order to transmit the at least one signal to an external device such that an operational state of the data storage device can be debugged/monitored.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: March 17, 2020
    Assignee: RAYMX MICROELECTRONICS, CORP.
    Inventors: Jo-Hua Wu, Cheng-Yu Chen
  • Patent number: 10566065
    Abstract: A memory control device includes a memory and a controller. The memory includes a plurality of memory blocks. The controller is coupled to the memory and configured to select a first memory block from the memory blocks and program data into the first memory block. When the memory control device is deactivated and re-activated, the controller is further configured to read a voltage distribution of the first memory block to determine a deactivation interval, and determine a reference time according to the deactivation interval and an initial time, and the voltage distribution of the first memory block correspond to the data.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: February 18, 2020
    Assignee: RAYMX MICROELECTRONICS CORP.
    Inventors: Yi-Lin Hsieh, Jing-Long Xiao, Cheng-Yu Chen, Wang-Sheng Lin