Abstract: Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer, each pixel including an active layer disposed between an n-type region and a p-type region. Trenches isolate individual pixels and form at least one sidewall for each pixel. A first metal layer in direct contact with the p-type region is disposed on a top surface of each pixel. A second metal layer in direct contact with the n-type region is disposed on a bottom surface of a trench adjacent to each pixel. An insulating layer electrically isolating the first and second metal layers is disposed on the sidewall of each pixel and is substantially conformal to the sidewall.

Abstract: Embodiments of the invention include a light emitting diode including a semiconductor structure including an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. A first metal layer is in direct contact with the p-type region. A second metal layer is in direct contact with the n-type region. The first and second metal layers are both formed on a first side of the semiconductor structure. A transparent optic is optically coupled to a major surface of the light emitting diode.

Abstract: Embodiments of the invention include a light emitting diode (UVLED), the UVLED including a semiconductor structure with an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The UVLED is disposed on a mount. A transparent encapsulant is disposed over the UVLED. The transparent encapsulant has an angled sidewall.

Abstract: A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.

Abstract: Embodiments of the invention include a light emitting diode (LED) including a semiconductor structure. The semiconductor structure includes an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The LED is disposed on the mount. The mount is disposed on a conductive slug. A support surrounds the conductive slug. The support includes electrically conductive contact pads disposed on a bottom surface, and a thermally conductive pad disposed beneath the conductive slug, wherein the thermally conductive pad is not electrically connected to the LED.

Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

Abstract: Embodiments of the invention include a light emitting diode (LED) including a semiconductor structure. The semiconductor structure includes an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The LED is disposed on the mount. The mount is disposed on a conductive slug. A support surrounds the conductive slug. The support includes electrically conductive contact pads disposed on a bottom surface, and a thermally conductive pad disposed beneath the conductive slug, wherein the thermally conductive pad is not electrically connected to the LED.

Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

Abstract: A variety of applications for UV LEDs that are integrated into a system are described, where the UV light is used for disinfection of air or surfaces, or used to detect the scattering light by particles, or used for skin treatment. In one embodiment, a ceiling luminaire includes a sensor for detecting the presence of people in the room. The luminaire contains a first set of LEDs for generating white light, for illumination, and a second set of LEDs for generating UV light for disinfecting the room. When the sensor detects that no people are in the room, the system automatically controls the UV LEDs to turn on to disinfect the room. The white light LEDs may be independently controlled with a dimmer.

Abstract: In an example, the present invention provides a light-emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers. The device has a substrate member comprising a surface region. The device has a thickness of AlGaN material formed overlying the surface region and an aluminum concentration characterizing the AlGaN material having a range of 0 to 100%. The device has a boron doping concentration characterizing the AlGaN material having a range between 1e15 to 1e20 atoms/centimeter3.

Abstract: A method for a hand-held device comprising illuminating, with a first UV LED associated with the hand-held device, a surface of an object with UV light, acquiring with a visible-light image sensor on the hand-held device, a first image of the surface of the object while the surface of the object is illuminated by the first UV LED, performing with the processor in the hand-held device, a function upon the first image to determine a type of contaminant disposed upon the surface of the object, determining with the processor in the hand-held device, sanitation techniques to perform in response to the type of contaminant that is determined, and displaying with a touch-screen display on the hand-held device, the sanitation techniques to the user.

Abstract: Embodiments of the invention include a vessel having an opening and a detachable cover for covering the opening. The cover includes a semiconductor device with an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The cover also includes a sensor for detecting whether the cover is covering the opening.

Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

Abstract: A storage container includes an input portion for receiving and filtering a source liquid to form an output liquid, a storage portion for storing the filtered liquid, and a base portion disposed below the storage portion including a UV light source for providing transmitted UV light to the filtered liquid, a UV light detector disposed an optical path length away from the UV light source for detecting received UV light through the filtered liquid in response to the transmitted UV light, a processor for determining an absorption or a transmission percentage in response to the transmitted UV light and the received UV light, for determining a safe condition, in response to the absorption or the transmission percentage respectively not exceeding or exceeding predetermined criteria, and one or more indicators for indicating that the liquid is safe for consumption to a user, in response to the safe condition.

Abstract: An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.

Abstract: An water providing apparatus includes a input portion for receiving untreated water, a treatment portion for treating and outputting treated water having a UV treatment module for reducing pathogens, a filtering mechanism for reducing physical and chemical impurities, a UV analysis module for determining levels of the impurities in the untreated water and for determining levels of impurities in the treated water, a processing unit for determining whether the levels of impurities in the treated water exceed a threshold, a reporting module for outputting the levels of the impurities in the untreated and treated water to a remote monitoring service, and a water output portion for providing the treated water if safe, and for inhibiting output of the treated water if unsafe.

Abstract: A variety of applications for UV LEDs that are integrated into a system are described, where the UV light is used for disinfection of air or surfaces, or used to detect the scattering light by particles, or used for skin treatment. In one embodiment, a ceiling luminaire includes a sensor for detecting the presence of people in the room. The luminaire contains a first set of LEDs for generating white light, for illumination, and a second set of LEDs for generating UV light for disinfecting the room. When the sensor detects that no people are in the room, the system automatically controls the UV LEDs to turn on to disinfect the room. The white light LEDs may be independently controlled with a dimmer.

Abstract: Embodiments of the invention include an ultraviolet (UV) source, the UV source including a semiconductor device comprising an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. A reflector cup is disposed around the UV source. A transparent cover is disposed over the reflector cup.

Abstract: A portable baby bottle sterilization device includes a housing having disposed therein an inner lining defining a bottle sterilization cavity, wherein the bottle sterilization cavity includes an opening, and wherein the inner lining is configured to receive one or more baby bottles therein through the opening, a power source, a plurality of UV LEDs coupled to the power source and to the inner lining, wherein the plurality of UV LED configured to provide UV-C light within the bottle sterilization cavity, and a processor coupled to the power source and to the plurality of UV LEDs, wherein the processor is configured to control intensity and duration of the UV-C light within the bottle sterilization cavity, and a cover coupled to the housing, wherein the cover is repositionable relative to the housing, wherein the cover can be positioned to removably cover the opening of the bottle sterilization cavity.

Abstract: Embodiments of the invention include a light emitting diode (UVLED), the UVLED including a semiconductor structure with an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. The UVLED is disposed on a mount. A transparent encapsulant is disposed over the UVLED. The transparent encapsulant has an angled sidewall.