Abstract: Embodiments of the invention include an ultraviolet (UV) source, the UV source including a semiconductor device comprising an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. A reflector cup is disposed around the UV source. A transparent cover is disposed over the reflector cup.

Abstract: Embodiments of the invention include a light emitting diode including a semiconductor structure including an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. A first metal layer is in direct contact with the p-type region. A second metal layer is in direct contact with the n-type region. The first and second metal layers are both formed on a first side of the semiconductor structure. A transparent optic is optically coupled to a major surface of the light emitting diode.

Abstract: A UV illumination method includes moving a UV peripheral separate from a smart device to location associated with a plurality of target surfaces, selecting a UV illumination application executing upon the smart device, selecting an icon from within the UV illumination application, sending via a wireless communication mechanism of the smart device to the UV peripheral, instructions to turn on a UV light disposed in the UV peripheral in response to the selection of the icon, receiving via a wireless communication mechanism disposed in the UV peripheral, the instructions to turn on the UV light, illuminating, with the UV light within the UV peripheral, sanitizing UV light to the plurality of target surfaces other than surfaces of the smart device in response to the instructions, and thereafter terminating illuminating, with the UV light within the UV peripheral, the sanitizing UV light from the plurality of target surfaces.

Abstract: In an example, the present invention provides a light-emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers. The device has a substrate member comprising a surface region. The device has a thickness of AlGaN material formed overlying the surface region and an aluminum concentration characterizing the AlGaN material having a range of 0 to 100%. The device has a boron doping concentration characterizing the AlGaN material having a range between 1e15 to 1e20 atoms/centimeter3.

Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

Abstract: A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.

Abstract: Embodiments of the invention include an ultraviolet (UV) source, the UV source including a semiconductor device comprising an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. A reflector cup is disposed around the UV source. A transparent cover is disposed over the reflector cup.

Abstract: A method for a hand-held device comprising illuminating, with a first UV LED associated with the hand-held device, a surface of an object with UV light, acquiring with a visible-light image sensor on the hand-held device, a first image of the surface of the object while the surface of the object is illuminated by the first UV LED, performing with the processor in the hand-held device, a function upon the first image to determine a type of contaminant disposed upon the surface of the object, determining with the processor in the hand-held device, sanitation techniques to perform in response to the type of contaminant that is determined, and displaying with a touch-screen display on the hand-held device, the sanitation techniques to the user.

Abstract: An LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm, the device. The device includes a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others. The device has an active region overlying the substrate region, the active region comprising a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The light emitting spatial region is characterized by about 1 to 10 microns. The device includes an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.

Abstract: A method for a smart-device comprising receiving a user selection of an icon on a display, initiating acquisition of a first image of a target surface using a camera in response to receiving the selection, directing power to an UV-LED disposed proximate to the camera, wherein the power is provided to the UV-LEDs for less than about 0.5 seconds, while power is provided to the UV-LED, initiating acquisition of a second image of a target surface using the camera, determining an image visually highlighting a contaminant on the target surface in response to the first and second images, determining an object type associated with the target surface, in response to the first image, determining geographic data, and storing the image, the object type, and the geographic data in a memory.

Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

Abstract: A UV device includes a housing having a portion configured to be removably attached to a smart device, a UV light source disposed within the housing, wherein the UV light source is configured to provide output of UV light in response to an operating powered, a communication mechanism disposed within the housing, wherein the communication mechanism is configured to receive instructions from the smart device, a control mechanism disposed within the housing, wherein the control mechanism is coupled to the UV light source, and to the communication mechanism, wherein the control mechanism is configured to provide the operating power to the UV light source, in response to the instructions received from the smart device.

Abstract: In the present invention, a fabrication process for epitaxy onto back-side patterned substrate, where the substrate patterns were defined prior to epitaxy and therefore simplify post growth processing. Specifically, for LED devices, said fabrication process reduces the post growth processing steps required to obtain high LEE due to strong scattering of the back-side features defined on the substrate. The features defined on the back-side patterned substrate scatters strongly with light emitted from the LED devices. Methods of obtaining such features include wet and dry etching.

Abstract: Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer, each pixel including an active layer disposed between an n-type region and a p-type region. Trenches isolate individual pixels and form at least one sidewall for each pixel. A first metal layer in direct contact with the p-type region is disposed on a top surface of each pixel. A second metal layer in direct contact with the n-type region is disposed on a bottom surface of a trench adjacent to each pixel. An insulating layer electrically isolating the first and second metal layers is disposed on the sidewall of each pixel and is substantially conformal to the sidewall.

Abstract: The present invention provides an LED device capable of emitting electromagnetic radiation ranging from about 200 nm to 365 nm and a method. The device has a substrate member, the substrate member being selected from sapphire, silicon, quartz, gallium nitride, gallium aluminum nitride, or others and an active region overlying the substrate region. The active region comprises a light emitting spatial region comprising a p-n junction and characterized by a current crowding feature of electrical current provided in the active region. The device has an optical structure spatially disposed separate and apart the light emitting spatial region and is configured to facilitate light extraction from the active region.

Abstract: In the present invention, a fabrication process for epitaxy onto back-side patterned substrate, where the substrate patterns were defined prior to epitaxy and therefore simplify post growth processing. Specifically, for LED devices, said fabrication process reduces the post growth processing steps required to obtain high LEE due to strong scattering of the back-side features defined on the substrate. The features defined on the back-side patterned substrate scatters strongly with light emitted from the LED devices. Methods of obtaining such features include wet and dry etching.

Abstract: A device for providing ultraviolet light includes a shell for a portable device, wherein the shell includes an interior region and an exterior region, wherein the interior region is adapted to be disposed adjacent to the portable device, a power source configured to provide electrical power, a and an ultraviolet light source coupled to the power source and embedded into the exterior region of the shell, wherein the ultraviolet light source is configured to output the ultraviolet light in response to the electrical power.

Abstract: A portable water purification device comprises a portable power supply, an ultraviolet light source coupled to the portable power supply, wherein the ultraviolet light source is configured to output ultraviolet light, a container coupled to the ultraviolet light source, wherein the container is configured to hold water, and wherein the container is configured to reflect ultraviolet light, and an indicator configured to output a visual indication when the ultraviolet light source is outputting ultraviolet light.