Abstract: Methods for evaluating synergy of modification and removal operations for a wide variety of materials to determine process conditions for self-limiting etching by atomic layer etching are provided herein. Methods include determining the surface binding energy of the material, selecting a modification gas for the material where process conditions for modifying a surface of the material generate energy less than the modification energy and greater than the desorption energy, selecting a removal gas where process conditions for removing the modified surface generate energy greater than the desorption energy to remove the modified surface but less than the surface binding energy of the material to prevent sputtering, and calculating synergy to maximize the process window for atomic layer etching.

Abstract: Solutions, reagents, and methods for nucleic acid purification. In certain aspects, cationic surfactant and, optionally, an anionic surfactant solutions are provided which can be used for phase separation and capture of nucleic acids, such as plasmid or genomic DNA, to a solid phase carrier, such as a mineral matrix.

Abstract: A substrate processing system configured to perform a deposition process on a substrate includes a substrate support including a plurality of zones and a plurality of resistive heaters arranged throughout the plurality of zones. The plurality of resistive heaters includes separately-controllable resistive heaters arranged in respective ones of the plurality of zones. A controller is configured to, during the deposition process, control the plurality of resistive heaters to selectively adjust temperatures within the plurality of zones.

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

Abstract: In various embodiments, a showerhead mechanism to adjust a showerhead in a semiconductor substrate-processing apparatus is disclosed. The mechanism includes at least one actuator assembly that is dynamically operable to adjust parallelism of a faceplate of the showerhead with reference to an upper surface of a substrate pedestal that is to be positioned adjacent to the faceplate. Each of the actuator assemblies includes a piezoelectric stack and a lever having a first end and a second end. The lever is mechanically coupled on the first end to the piezoelectric stack and on the second end to the showerhead to displace the showerhead in at least one direction of tilt. The lever is operable to amplify mechanically a displacement of the piezoelectric stack. A lever pivot point is coupled to the lever and is located between the first end and the second end of the lever.

Abstract: The mobile manipulation device includes a base, a lift, an arm, and a manipulator. The base is able to move across a surface underneath the base. The lift is coupled to the base. The lift moves the arm vertically. The arm moves the manipulator horizontally along one direction. The base is able to move perpendicular to the one direction.

Abstract: An electrostatic substrate chuck with substrate backside purging to prevent incidental backside deposition and that provides thermal sinking to prevent or mitigate the failure of seals.

Abstract: Dry development of resists can be useful, for example, to form a patterning mask in the context of high-resolution patterning. Dry development may be advantageously accomplished by a method of processing a semiconductor substrate including providing in a process chamber a photopatterned resist on a substrate layer on a semiconductor substrate, and dry developing the photopatterned resist by removing either an exposed portion or an unexposed portion of the resist by a dry development process comprising exposure to a chemical compound to form a resist mask. The resist may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film EUV resist.

Abstract: A method is provided, including the following operations: depositing a liner in a feature of a substrate; depositing a monolayer of zinc over the liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.

Abstract: A method for depositing tungsten includes arranging a substrate including a titanium nitride layer in a substrate processing chamber and performing multi-stage atomic layer deposition of tungsten on the substrate using a precursor gas includes tungsten chloride (WCIx) gas, wherein x is an integer. The performing includes depositing the tungsten during a first ALD stage using a first dose intensity of the precursor gas, and depositing the tungsten during a second ALD stage using a second dose intensity of the precursor gas. The first dose intensity is based on a first dose concentration and a first dose period. The second dose intensity is based on a second dose concentration and a second dose period. The second dose intensity is 1.5 to 10 times the first dose intensity.

Abstract: A method for manufacturing an arrestor for an electrostatic chuck includes printing first layers of an arrestor for an electrostatic chuck using a 3-D printer and an electrically non-conductive material. The first layers of the arrestor at least partially define a first opening to a gas flow channel. The method includes printing intermediate layers of the arrestor using the 3-D printer and the electrically non-conductive material. The intermediate layers of the arrestor at least partially define the gas flow channel. The method includes printing second layers of the arrestor using the 3-D printer and the electrically non-conductive material. The second layers of the arrestor at least partially define a second opening of the gas flow channel. At least one of the first opening, the second opening and/or the gas flow channel of the arrestor is arranged to prevent a direct line of sight between the first opening and the second opening of the arrestor.

Abstract: Disclosed are various embodiments for identifying devices that are part of a network. Devices are modeled based on physical characteristics. Devices are classified or device communications can be verified.

Abstract: Various embodiments herein relate to methods and apparatus for electroplating metal onto substrates. In various cases, a reference electrode may be modified to promote improved electroplating results. The modifications may relate to one or more of the reference electrode's shape, position, relative conductivity compared to the electrolyte, or other design feature. In some particular examples the reference electrode may be dynamically changeable, for example having a changeable shape and/or position. In a particular example the reference electrode may be made of multiple segments. The techniques described herein may be combined as desired for individual applications.

Abstract: Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication, The methods involve forming bulk conductive films on thin low resistivity transition metal layers that have large grain size. The bulk conductive films follow the grains of the low resistivity transition metal films, resulting in large grain size. Also provided are devices including template layers and bulk films.

Abstract: Disclosed herein are novel Pichia pastoris strains for expression of exogenous proteins with substantially homogeneous N-glycans. The strains are genetically engineered to include a mutant OCH1 allele which is transcribed into an mRNA coding for a mutant OCH1 gene product (i.e., ?-1,6-mannosyltransferase, or “OCH1 protein”). The mutant OCH1 protein contains a catalytic domain substantially identical to that of the wild type OCH1 protein, but lacks an N-terminal sequence necessary to target the OCH1 protein to the Golgi apparatus. The strains disclosed herein are robust, stable, and transformable, and the mutant OCH1 allele and the ability to produce substantially homogeneous N-glycans are maintained for generations after rounds of freezing and thawing and after subsequent transformations.

Abstract: Methods treating pulmonary hypertension, including pulmonary arterial hypertension, are provided, and include administering a polypeptide antagonist of a Na/K ATPase/Src receptor complex to a subject in need thereof. Administration of the polypeptide antagonist reduces pulmonary artery acceleration time, reduces an amount of right ventricular hypertrophy, reduces right ventricular wall thickness, reduces an amount of pulmonary vessel wall thickness, reduces an amount of plexiform lesions in a lung of the subject, reduces an amount of collagen deposition in a pulmonary blood vessel, reduces an amount of collagen deposition in a pulmonary blood vessel media or adventitia, and/or reduces an amount of right ventricular fibrosis. Methods of reducing pulmonary vessel wall thickness are also provided and include the administration of the polypeptide antagonist of a Na/K ATPase/Src receptor complex.

Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Abstract: A method for moving a stage relative to a base includes coupling a magnet assembly to the stage; coupling an array of coils to the base; and directing current to at least one of the coils with a control system that includes a processor to generate a force that levitates the stage relative to the base and moves the stage relative to the base. In one embodiment, the control system generates at least one current command that levitates and moves the stage while inhibiting the excitation of a first targeted flexible mode.

Abstract: It is well understood in the medical industry that medical disorders can manifest as serious problems for the affected subjects, their families, and society. Today, psychiatrists, neurologists and other physicians treat these disorders with a variety of medications, many of which have significant negative side effects. The teachings provided herein are directed to a novel system and methods for treating certain neurological, psychological, psychiatric and medical disorders by delivering a “magnetic stimulation” to a subject's neural and perineural system using either a static or electromagnetic field to generate a modulated variable power multi-spectral magnetic stimulation on three axis; the modulated stimulation using methods that have predictable, controlled, modifiable, and repeatable characteristics.

Abstract: A battery electrode composition is provided that comprises a composite material comprising one or more nanocomposites. The nanocomposites may each comprise a planar substrate backbone having a curved geometrical structure, and an active material forming a continuous or substantially continuous film at least partially encasing the substrate backbone. To form an electrode from the electrode composition, a plurality of electrically-interconnected nanocomposites of this type may be aggregated into one or more three-dimensional agglomerations, such as substantially spherical or ellipsoidal granules.