Abstract: An objective of the present invention is to provide a SiC epitaxial wafer with a large diameter, a thin thickness, and few triangular defects. A SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer. The SiC substrate has a diameter of 195 mm or more and a thickness of 460 ?m or less. The SiC epitaxial layer has a triangular defect density of 0.2 pieces/cm2 or less.

Abstract: An objective of the present invention is to provide a SiC epitaxial wafer with a large diameter, a low triangular defect density, and high carrier concentration uniformity. According to the present invention, a SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer. The SiC substrate has a diameter of 195 mm or more. The SiC epitaxial layer has a triangular defect density of 0.2 pieces/cm2 or less and a carrier concentration variation of 20% or less.

Abstract: A SiC single crystal substrate of an embodiment is a SiC single crystal substrate wherein the main plane of the SiC single crystal substrate has an off angle of 0° to 6° to the (0001) plane in the <11-20> direction and an off angle of 0° to 0.5° to the (0001) plane in the <1-100> direction, and includes non-MP defects wherein when the Si surface is etched in molten KOH at 500° C. for 15 minutes, the non-MP defects that appear by etching are hexagonal and have no core, the area of the observed etch pit of the non-MP defect is more than 10% larger than that of the observed etch pit of the TSD and is less than 110% of that of the observed etch pit of the micropipe (MP), and a transmission X-ray topography image of the non-MP defect is distinguishable from the transmission X-ray topography image of the micropipe (MP), wherein etch pits, which are identified as the non-MP defects, appear in the range of 0.1/cm2 to 50/cm2.

Abstract: An objective of the present invention is to provide a SiC epitaxial wafer with a large diameter, a thin thickness, and high carrier concentration uniformity. A SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer. The SiC substrate has a diameter of 195 mm or more and a thickness of 460 ?m or less. The SiC epitaxial layer has a carrier concentration variation of 20% or less.

Abstract: A SiC epitaxial wafer according to the present embodiment includes: a SiC substrate; and a SiC epitaxial layer deposited on the SiC substrate, wherein, in the SiC substrate, a density of basal plane dislocations is 1/cm2 or more and 3000/cm2 or less, and wherein, in the SiC epitaxial layer, a density of double Shockley (2SSF) type stacking faults is 4/cm2 or more and 10/cm2 or less, and a density of stacking faults other than the double Shockley (2SSF) type stacking faults is 2/cm2 or less.

Abstract: An underfill material includes a curable resin component and inorganic particles. A ratio on a number basis of particles with a particle diameter of 0.5 ?m or less included in the inorganic particles is 10% or less of the total inorganic particles, and a ratio on a number basis of particles with a particle diameter of 3 ?m or more is 5% or less of the total inorganic particles.

Abstract: An aluminum alloy member (1) for forming a fluoride coating thereon is intended for use as a component of a semiconductor production apparatus. The composition of the aluminum alloy member includes Mg: 1.2 mass % to 4.5 mass % and Si: 0.2 mass % to 1.0 mass %, with the excess Mg concentration being 0.5 mass % or more.

Abstract: There is provided a method for analyzing gas containing nitrosyl fluoride capable of highly accurately and safely quantitatively determining oxygen gas and nitrogen gas contained in mixed gas containing nitrosyl fluoride and at least one of the oxygen gas and the nitrogen gas. The method for analyzing gas containing nitrosyl fluoride includes: a conversion step of bringing the mixed gas into contact with a reactant reacting with the nitrosyl fluoride to generate nitrogen oxide, and converting the nitrosyl fluoride into the nitrogen oxide by a reaction between the nitrosyl fluoride and the reactant; a removal step of bringing the gas after the conversion step into contact with an adsorbent adsorbing the nitrogen oxide, and removing the nitrogen oxide from the gas by the adsorption of the nitrogen oxide; and an analysis step of analyzing the gas after the removal step and quantitatively determining the oxygen gas and the nitrogen gas.

Abstract: A method for classifying solder particles includes: a first step of forming an electric field between a first electrode 2 and a second electrode 3 included in an electrostatic attraction device, the first electrode 2 having a disposition part having electrostatic diffusivity or electrical conductivity, the second electrode 3 having an attraction part 4 having electrical insulation properties, which faces the disposition part and is provided with a plurality of opening parts 10 opened to the disposition part side, so as to cause solder particles P disposed on the disposition part to be electrostatically attracted to the attraction part 4; a second step of removing solder particles P2 attracted to areas other than the opening parts 10 of the attraction part 4; and a third step of collecting solder particles P1 accommodated in the opening parts, from the attraction part 4 that has been subjected to the second step.

Abstract: A fluorine-containing ether compound is provided which is represented by the following formula: R1—R2—CH2—R3a—CH2—R4a—CH2—R3b—CH2—R4b—CH2—R3c—CH2—R5—R6 (R3a, R3b, and R3c are perfluoropolyether chains; R2, R4a, R4b, and R5 are a divalent linking group having at least one selected from the group consisting of a hydroxyl group, an amino group, a carboxy group, and a sulfo group; R2 has an oxygen atom at an end that is bonded to R1; R5 has an oxygen atom at an end that is bonded to R6; R1 and R6 are an organic group having 1 to 50 carbon atoms or a hydrogen atom, and at least one of them is a group in which a cyano group is bonded to a carbon atom of an organic group having 1 to 8 carbon atoms).

Abstract: Provided are a catalyst, which enables the production of a high molecular weight olefin polymer having a polar group and being usable for various applications at a high catalytic activity, and a method for producing such an olefin polymer. Use is made of, as a polymerization catalyst for an olefin having a polar group, a metal complex represented by general formula (C1) [wherein: M represents an element in group 10 of the periodic table; X represents a phosphorus atom (P) or arsenic atom (As); R5 to R11 are as described in claims; at least one of R6 and R7 is an aralkyl group represented by general formula (2) (wherein R12 to R21 are as described in claims); L represents an electron-donating ligand; and q is 0, ½, 1 or 2].

Abstract: A negative electrode material for a lithium ion secondary battery, including composite particles, each of the composite particles including: a spherical graphite particle; and flat graphite particles that are gathered or bound together such that the flat graphite particles have non-parallel orientation planes, wherein the composite particles satisfy the following (1) and (2): (1) a pore volume in a range of a pore diameter of from 0.10 to 8.00 ?m obtained by the mercury intrusion method is from 0.20 to 1.00 mL/g; and (2) in a log differential pore volume distribution obtained by the mercury intrusion method, at least two peaks appear in a range of a pore diameter of from 0.10 to 8.00 the two peaks including a first peak P1 and a second peak P2 at a higher diameter than the first peak P1.

Abstract: There is provided a gas-filled container in which the purity of filled (E)-1,1,1,4,4,4-hexafluoro-2-butene is less likely to decrease over a long term. The gas-filled container includes: a filled container filled with (E)-1,1,1,4,4,4-hexafluoro-2-butene. A part in contact with the filled (E)-1,1,1,4,4,4-hexafluoro-2-butene of the filled container is formed of a metal having a copper concentration of less than 0.5% by mass.

Abstract: The present invention provides a fluorine-containing ether compound that can form a lubricating layer which has excellent wear resistance even if the thickness is thin and in which a decrease in film thickness due to spin-off is less likely to occur. The fluorine-containing ether compound is represented by the following formula. R1—R2—O—CH2—R3—CH2—O—R4—R5 (R3 is a perfluoropolyether chain. R1 and R5 are either an alkyl group which may have a substituent or a hydrocarbon group having a double bond or triple bond. R2 and R4 are each a divalent linking group containing one or more heteroatoms, and have one or more polar groups, and the terminal end on the side bonded to R1 and R5 is a heteroatom. At least one of R2 and R4 contains one or more secondary amine structures. At least one of R1—R2— and —R4—R5 contains one or more cyano groups).

Abstract: Provided are a conductive polymer-containing dispersion for obtaining a solid electrolytic capacitor with low equivalent series resistance (ESR) while maintaining the capacitance, a method for producing same, and a solid electrolytic capacitor having low ESR while maintaining the capacitance. A conductive polymer-containing dispersion comprising a conjugated conductive polymer (A), a polyanion (B), an additive (C), and a dispersion medium (D), wherein a hydrogen bond term ?H1 of the additive (C) as a Hansen solubility parameter is 5.0 to 20.0 MPa0.5.

Abstract: Provided are a conductive polymer-containing dispersion for obtaining a solid electrolytic capacitor with low equivalent series resistance (ESR) while maintaining the capacitance, a method for producing same, and a solid electrolytic capacitor having low ESR while maintaining the capacitance. A conductive polymer-containing dispersion comprising a conjugated conductive polymer (A), a polyanion (B), an additive (C), and a dispersion medium (D), wherein a hydrogen bond term ?H1 of the additive (C) as a Hansen solubility parameter is 5.0 to 20.0 MPa0.5.

Abstract: A SiC epitaxial wafer including: a SiC substrate; and a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein a diameter of the SiC substrate is 195 mm or more, and a warp is 50 ?m or less.

Abstract: Provided is a method for forming a deposition film, with which a deposition film having improved uniformity of a film thickness can be formed. The method for forming a deposition film is a method for forming a deposition film on a substrate (21) on which a pattern (22) is formed, and the method includes a deposition step of placing the substrate (21) on an electrode and applying bias power to the electrode to form a deposition film (40) on the substrate (21) using plasma obtained by plasma-processing a deposition gas. A material constituting the pattern (22) is at least one of a carbon-containing material, a silicon-containing material, and a metal-containing material. In addition, the deposition gas contains unsaturated halon. The unsaturated halon is an unsaturated compound which has a fluorine atom, a bromine atom, and a carbon atom in a molecule and has 2 or 3 carbon atoms. Further, a power density of the bias power applied to the electrode is more than 0 W/cm2 and 0.5 W/cm2 or less.

Abstract: A liquid resin composition for sealing contains an epoxy resin (A); a curing agent (B) containing at least one amino group in a molecule; a polymer resin (C); and an inorganic filler (D), wherein the polymer resin (C) has a weight average molecular weight of 10,000 or more.

Abstract: A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron is less than 1.0×1014 cm?3 at any position in the plane of the epitaxial layer.