Patents Assigned to RF Micro Devices, Inc.
  • Patent number: 9515612
    Abstract: A parallel amplifier and an offset capacitance voltage control loop are disclosed. The parallel amplifier has a parallel amplifier output, which is coupled to an envelope tracking power supply output via an offset capacitive element. The offset capacitive element has an offset capacitive voltage. The offset capacitance voltage control loop regulates the offset capacitive voltage, which is adjustable on a communications slot-to-communications slot basis.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: December 6, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Nadim Khlat, Michael R. Kay, Manbir Singh Nag
  • Patent number: 9494962
    Abstract: Embodiments of circuitry, which includes power supply switching circuitry and a first inductive element, are disclosed. The power supply switching circuitry has a first switching output and a second switching output. The first inductive element is coupled between the first switching output and a power supply output. The power supply switching circuitry operates in one of a first operating mode and a second operating mode. During the first operating mode, the first switching output is voltage compatible with the second switching output. During the second operating mode, the first switching output is allowed to be voltage incompatible with the second switching output.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: November 15, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Nadim Khlat, Michael R. Kay
  • Patent number: 9479118
    Abstract: Power supply circuitry, which includes a parallel amplifier and a parallel amplifier power supply, is disclosed. The power supply circuitry operates in either an average power tracking mode or an envelope tracking mode. The parallel amplifier power supply provides a parallel amplifier power supply signal. The parallel amplifier regulates an envelope power supply voltage based on an envelope power supply control signal using the parallel amplifier power supply signal, which provides power for amplification. During the envelope tracking mode, the envelope power supply voltage at least partially tracks an envelope of an RF transmit signal and the parallel amplifier power supply signal at least partially tracks the envelope power supply control signal. During the average power tracking mode, the envelope power supply voltage does not track the envelope of the RF transmit signal.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: October 25, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Nadim Khlat, Baker Scott, Michael R. Kay
  • Patent number: 9459645
    Abstract: Embodiments of circuitry, which includes power supply switching circuitry and a first inductive element, are disclosed. The power supply switching circuitry has a first switching output and a second switching output. The first inductive element is coupled between the first switching output and a power supply output. The power supply switching circuitry operates in one of a first operating mode and a second operating mode. During the first operating mode, the first switching output is voltage compatible with the second switching output. During the second operating mode, the first switching output is allowed to be voltage incompatible with the second switching output.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: October 4, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Nadim Khlat, Michael R. Kay
  • Patent number: 9450539
    Abstract: A parallel amplifier and an offset capacitance voltage control loop are disclosed. The parallel amplifier has a parallel amplifier output, which is coupled to an envelope tracking power supply output via an offset capacitive element. The offset capacitive element has an offset capacitive voltage. The offset capacitance voltage control loop regulates the offset capacitive voltage, which is adjustable on a communications slot-to-communications slot basis.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: September 20, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Nadim Khlat, Michael R. Kay, Manbir Singh Nag
  • Patent number: 9444407
    Abstract: Power supply circuitry, which includes a parallel amplifier and a parallel amplifier power supply, is disclosed. The power supply circuitry operates in either an average power tracking mode or an envelope tracking mode. The parallel amplifier power supply provides a parallel amplifier power supply signal. The parallel amplifier regulates an envelope power supply voltage based on an envelope power supply control signal using the parallel amplifier power supply signal, which provides power for amplification. During the envelope tracking mode, the envelope power supply voltage at least partially tracks an envelope of an RF transmit signal and the parallel amplifier power supply signal at least partially tracks the envelope power supply control signal. During the average power tracking mode, the envelope power supply voltage does not track the envelope of the RF transmit signal.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: September 13, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Nadim Khlat, Baker Scott, Michael R. Kay
  • Patent number: 9431969
    Abstract: Radio frequency (RF) amplification devices are disclosed that include Doherty amplification circuits and control circuits along with methods of operating the same. In one embodiment, the Doherty amplification circuit includes a quadrature coupler having an isolation port and a tunable impedance load coupled to the isolation port and configured to provide a tunable impedance. The control circuit is configured to tune the tunable impedance of the tunable impedance load at the isolation port dynamically as a function of the RF power of the Doherty amplification circuit. In this manner, the control circuit can provide dynamic load modulation, thereby increasing the power efficiency of the Doherty amplification circuit, particularly at backed-off power levels. The load modulation provided by the control circuit also allows the Doherty amplification circuit to provide broadband amplification in various RF communication bands.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: August 30, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Hamhee Jeon, Kevin Wesley Kobayashi
  • Patent number: 9423813
    Abstract: Embodiments of circuitry, which includes power supply switching circuitry and a first inductive element, are disclosed. The power supply switching circuitry has a first switching output and a second switching output. The first inductive element is coupled between the first switching output and a power supply output. The power supply switching circuitry operates in one of a first operating mode and a second operating mode. During the first operating mode, the first switching output is voltage compatible with the second switching output. During the second operating mode, the first switching output is allowed to be voltage incompatible with the second switching output.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: August 23, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Nadim Khlat, Michael R. Kay
  • Patent number: 9401678
    Abstract: A switch mode power supply converter, a parallel amplifier, and a parallel amplifier output impedance compensation circuit are disclosed. The switch mode power supply converter provides a switching voltage and generates an estimated switching voltage output, which is indicative of the switching voltage. The parallel amplifier generates a power amplifier supply voltage at a power amplifier supply output based on a combination of a VRAMP signal and a high frequency ripple compensation signal. The parallel amplifier output impedance compensation circuit provides the high frequency ripple compensation signal based on a difference between the VRAMP signal and the estimated switching voltage output.
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: July 26, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Michael R. Kay, Nadim Khlat
  • Patent number: 9397617
    Abstract: Radio frequency (RF) amplification devices are disclosed that include Doherty amplification circuits and methods of operating the same. In one embodiment, a Doherty amplification circuit includes a main carrier RF amplifier, a peaking RF amplifier, and a periodic quadrature coupler. To provide Doherty amplification, the peaking RF amplifier is configured to be deactivated while an RF signal is below a threshold level and is configured to be activated while the RF signal is above the threshold level. The periodic quadrature coupler is configured to combine a first RF split signal from the main carrier RF amplifier and a second RF split signal from the peaking RF amplifier into the RF signal, such that the RF signal is output from an output port while the peaking RF amplifier is activated. The periodic quadrature coupler allows the Doherty amplification circuit to provide broadband amplification in various RF communication bands.
    Type: Grant
    Filed: June 25, 2014
    Date of Patent: July 19, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Hamhee Jeon, Kevin Wesley Kobayashi
  • Patent number: 9395737
    Abstract: Embodiments of circuitry, which includes power supply switching circuitry and a first inductive element, are disclosed. The power supply switching circuitry has a first switching output and a second switching output. The first inductive element is coupled between the first switching output and a power supply output. The power supply switching circuitry operates in one of a first operating mode and a second operating mode. During the first operating mode, the first switching output is voltage compatible with the second switching output. During the second operating mode, the first switching output is allowed to be voltage incompatible with the second switching output.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: July 19, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Nadim Khlat, Michael R. Kay
  • Patent number: 9391564
    Abstract: Radio frequency (RF) amplification devices are disclosed that include Doherty amplification circuits and control circuits along with methods of operating the same. In one embodiment, the Doherty amplification circuit includes a quadrature coupler having an isolation port and a tunable impedance load coupled to the isolation port and configured to provide a tunable impedance. The control circuit is configured to tune the tunable impedance of the tunable impedance load at the isolation port dynamically as a function of the RF power of the Doherty amplification circuit. In this manner, the control circuit can provide dynamic load modulation, thereby increasing the power efficiency of the Doherty amplification circuit, particularly at backed-off power levels. The load modulation provided by the control circuit also allows the Doherty amplification circuit to provide broadband amplification in various RF communication bands.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: July 12, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Hamhee Jeon, Kevin Wesley Kobayashi
  • Patent number: 9391588
    Abstract: A micro-electrical-mechanical system (MEMS) vibrating structure includes a carrier substrate, a first anchor, a second anchor, a single crystal piezoelectric body, and a conducting layer. The first anchor and the second anchor are provided on the surface of the carrier substrate. The single-crystal piezoelectric body is suspended between the first anchor and the second anchor, and includes a uniform crystalline orientation defined by a set of Euler angles. The single-crystal piezoelectric body includes a first surface parallel to and facing the surface of the carrier substrate on which the first anchor and the second anchor are formed and a second surface opposite the first surface. The conducting layer is inter-digitally dispersed, and is formed on the second surface of the single-crystal piezoelectric body. The first surface of the single-crystal piezoelectric body is left exposed.
    Type: Grant
    Filed: September 19, 2013
    Date of Patent: July 12, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Kushal Bhattacharjee, Sergei Zhgoon
  • Patent number: 9385685
    Abstract: A micro-electrical-mechanical system (MEMS) vibrating structure includes a carrier substrate, a first anchor, a second anchor, a single crystal piezoelectric body, a first conducting layer, and a second conducting layer. The first anchor and the second anchor are provided on the surface of the carrier substrate. The single-crystal piezoelectric body is suspended between the first anchor and the second anchor, and includes a uniform crystalline orientation defined by a set of Euler angles. The single-crystal piezoelectric body includes a first surface parallel to and facing the surface of the carrier substrate on which the first anchor and the second anchor are formed and a second surface opposite the first surface. The first conducting layer is inter-digitally dispersed on the second surface of the single-crystal piezoelectric body. The second conducting layer is inter-digitally dispersed on the first surface of the single-crystal piezoelectric body.
    Type: Grant
    Filed: September 19, 2013
    Date of Patent: July 5, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Kushal Bhattacharjee, Sergei Zhgoon
  • Patent number: 9385687
    Abstract: RF attenuator circuitry includes an RF attenuator and a control system. The RF attenuator is configured to provide an attenuation response between an input node and an output node. The control system is coupled to the RF attenuator and configured to adjust one or more control signals provided to the RF attenuator based on either the temperature of the circuitry or an externally applied test signal provided to the control system. The control signals are provided such that the attenuation response of the RF attenuator is substantially linear-in-dB with respect to either the temperature or the test signal provided to the control system. Because the control system is configured to adjust the control signals based either on a temperature of the circuitry or the test signal, the response of the RF attenuator can be easily and quickly tested to ensure linear-in-dB operation thereof.
    Type: Grant
    Filed: March 16, 2015
    Date of Patent: July 5, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Alan Leon Ellis, Edward Russell Franzwa
  • Patent number: 9377797
    Abstract: This disclosure relates to radio frequency (RF) power converters and methods of operating the same. In one embodiment, an RF power converter includes an RF switching converter, a low-drop out (LDO) regulation circuit, and an RF filter. The RF filter is coupled to receive a pulsed output voltage from the RF switching converter and a supply voltage from the LDO regulation circuit. The RF filter is operable to alternate between a first RF filter topology and a second RF filter topology. In the first RF filter topology, the RF filter is configured to convert the pulsed output voltage from a switching circuit into the supply voltage. The RF filter in the second RF filter topology is configured to filter the supply voltage from the LDO regulation circuit to reduce a ripple variation in a supply voltage level of the supply voltage. As such, the RF filter provides greater versatility.
    Type: Grant
    Filed: May 1, 2015
    Date of Patent: June 28, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Michael R. Kay, Nadim Khlat
  • Patent number: 9379604
    Abstract: Radio frequency (RF) switching circuitry includes support circuitry for maintaining one or more RF switching elements in either an ON or OFF state. The support circuitry includes a negative charge pump adapted to quickly generate a negative voltage during a “boost” mode of operation, and maintain the negative voltage during a normal mode of operation. The negative charge pump includes an oscillator adapted to generate a high frequency oscillating signal for driving the charge pump during the boost mode of operation and a low frequency oscillating signal for driving the charge pump during the normal mode of operation. By generating the high frequency oscillating signal only during a boost mode of operation, spurious noise coupled to the RF switch circuitry is minimized during a normal mode of operation.
    Type: Grant
    Filed: July 19, 2013
    Date of Patent: June 28, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Jinhua Zhong, Daniel Charles Kerr, Kelvin Kai Tuan Yan, Brian Keith White
  • Patent number: 9379670
    Abstract: A parallel amplifier and an offset capacitance voltage control loop are disclosed. The parallel amplifier has a parallel amplifier output, which is coupled to an envelope tracking power supply output via an offset capacitive element. The offset capacitive element has an offset capacitive voltage. The offset capacitance voltage control loop regulates the offset capacitive voltage, which is adjustable on a communications slot-to-communications slot basis.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: June 28, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Nadim Khlat, Michael R. Kay, Manbir Singh Nag
  • Patent number: 9379667
    Abstract: A switch mode power supply converter and a parallel amplifier are disclosed. The switch mode power supply converter is coupled to a modulated power supply output and the parallel amplifier has a parallel amplifier output coupled to the modulated power supply output. Further, the parallel amplifier has a group of output stages, such that each output stage is directly coupled to the parallel amplifier output and each output stage receives a separate supply voltage.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: June 28, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Nadim Khlat, Michael R. Kay, Philippe Gorisse
  • Patent number: 9374005
    Abstract: A DC-DC converter, which provides a converter output voltage using a DC source voltage, is disclosed. The DC-DC converter includes converter control circuitry and a boosting charge pump. The converter control circuitry selects one of a first boost operating mode, a second boost operating mode, and a boost disabled mode based on the DC source voltage. During the boost disabled mode, the boosting charge pump presents a high impedance at a charge pump output of the boosting charge pump. Otherwise, the boosting charge pump provides a charge pump output voltage. During the first boost operating mode, a nominal value of the charge pump output voltage is equal to about one and one-half times the DC source voltage. During the second boost operating mode, a nominal value of the charge pump output voltage is equal to about two times the DC source voltage.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: June 21, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Ashraf Rozek, Michael R. Kay