Patents Assigned to RF Micro Devices, Inc.
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Patent number: 9231528Abstract: In one embodiment, an amplification device has a temperature differential sensing circuit that reduces a local thermal memory effect. The amplification device may include an amplification circuit and biasing circuitry. The amplification device is operable to receive an input signal and generate and amplified output signal. The biasing circuitry generates a biasing signal that sets the quiescent operating level of the amplified output signal. The temperature differential sensing circuit provides a bias level adjustment signal that adjusts the biasing signal to maintain the quiescent operating level of the amplified output signal at a desired level.Type: GrantFiled: March 16, 2011Date of Patent: January 5, 2016Assignee: RF Micro Devices, Inc.Inventors: Marcus Granger-Jones, Wayne Kennan
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Patent number: 9225382Abstract: Front end circuitry for a mobile terminal includes separate receive paths and filtering elements for different portions of each operating band. Accordingly, the filtering elements for each receive path can be designed with a smaller pass-band, thereby reducing the complexity of filtering circuitry in the front end circuitry and improving the efficiency thereof.Type: GrantFiled: May 20, 2014Date of Patent: December 29, 2015Assignee: RF Micro Devices, Inc.Inventor: Nadim Khlat
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Patent number: 9221677Abstract: The present Disclosure provides for fabrication devices and methods for manufacturing a micro-electromechanical system (MEMS) switch on a substrate. The MEMS fabrication device may have a first and second sacrificial layer that form the mold of an actuation member. The actuation member is formed over the first and second sacrificial layers to manufacture a MEMS switch from the MEMS fabrication device.Type: GrantFiled: December 20, 2010Date of Patent: December 29, 2015Assignee: RF Micro Devices, Inc.Inventor: Sangchae Kim
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Patent number: 9225231Abstract: A direct current (DC)-DC converter, which includes an open loop ripple cancellation circuit, a switching supply, and a parallel amplifier, is disclosed. During a calibration mode, the parallel amplifier provides a parallel amplifier output current to regulate a power supply output voltage based on a calibration setpoint. The switching supply drives the parallel amplifier output current toward zero using a switching control signal, such that during the calibration mode, an estimate of a current gain is based on the switching control signal. Further, during the calibration mode, the open loop ripple cancellation circuit is disabled. During a normal operation mode, the open loop ripple cancellation circuit provides a ripple cancellation current, which is based on the estimate of the current gain.Type: GrantFiled: September 16, 2013Date of Patent: December 29, 2015Assignee: RF Micro Devices, Inc.Inventors: Philippe Gorisse, Nadim Khlat, Christopher Truong Ngo
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Patent number: 9219594Abstract: Radio frequency front end circuitry comprises a first antenna port, a second antenna port, antenna switching circuitry, a first diplexer, and a second diplexer. The antenna switching circuitry is coupled to each of the first antenna port and the second antenna port through the first diplexer and the second diplexer, respectively. The antenna switching circuitry is adapted to selectively couple one or more of a plurality of transmit and receive ports to the first antenna port and the second antenna port.Type: GrantFiled: March 28, 2013Date of Patent: December 22, 2015Assignee: RF Micro Devices, Inc.Inventors: Nadim Khlat, Marcus Granger-Jones
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Patent number: 9220067Abstract: A front end radio architecture (FERA) with power management is disclosed. The FERA includes a first power amplifier (PA) block having a first-first PA for amplifying first-first signals and a first-second PA for amplifying first-second signals. Also included is a second PA block having a second-first PA for amplifying second-first signals and a second-second PA for amplifying second-second signals. At least one power supply is adapted to selectively supply power to the first-first PA and the second-second PA through a first path. The power supply is also adapted to selectively supply power to the first-second PA and the second-first PA through a second path. A control system is adapted to selectively enable and disable the first-first PA, the first-second PA, the second-first PA, and the second-second PA.Type: GrantFiled: October 11, 2013Date of Patent: December 22, 2015Assignee: RF Micro Devices, Inc.Inventors: Nadim Khlat, Alexander Wayne Hietala
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Patent number: 9214922Abstract: A tunable series resonant circuit includes a voltage source, a source impedance, a variable capacitor, a series inductor, and a load impedance. The variable capacitor includes a sPAC (series programmable array of capacitors) having desirable characteristics for a tunable series resonant circuit. The sPAC may be a binary weighted sPAC, a thermometer coded sPAC, or some other sPAC.Type: GrantFiled: July 5, 2013Date of Patent: December 15, 2015Assignee: RF Micro Devices, Inc.Inventor: Marcus Granger-Jones
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Patent number: 9214900Abstract: Radio frequency (RF) power amplifier (PA) circuitry and a PA envelope power supply are disclosed. The RF PA circuitry receives and amplifies an RF input signal to provide an RF output signal using an envelope power supply signal, which is provided by the PA envelope power supply. The RF PA circuitry operates in either a normal RF spectral emissions mode or a reduced RF spectral emissions mode. When reduced RF spectral emissions are required, the RF PA circuitry operates in the reduced RF spectral emissions mode. As such, at a given RF output power, during the reduced RF spectral emissions mode, RF spectral emissions of the RF output signal are less than during the normal RF spectral emissions mode. As a result, the reduced RF spectral emissions mode may be used to reduce interference between RF communications bands.Type: GrantFiled: May 24, 2012Date of Patent: December 15, 2015Assignee: RF Micro Devices, Inc.Inventor: Roman Zbigniew Arkiszewski
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Patent number: 9214337Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.Type: GrantFiled: April 24, 2014Date of Patent: December 15, 2015Assignee: RF Micro Devices, Inc.Inventors: Michael Carroll, Julio Costa, Daniel Charles Kerr, Don Willis, Elizabeth Glass
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Patent number: 9214865Abstract: The present disclosure relates to a flexible direct current (DC)-DC converter, which includes a charge pump buck power supply and a buck power supply. The charge pump buck power supply and the buck power supply are voltage compatible with one another at respective output inductance nodes to provide flexibility. In one embodiment of the DC-DC converter, capacitances at the output inductance nodes are at least partially isolated from one another by using at least an isolating inductive element between the output inductance nodes to increase efficiency. In an alternate embodiment of the DC-DC converter, the output inductance nodes are coupled to one another, such that the charge pump buck power supply and the buck power supply share a first inductive element, thereby eliminating the isolating inductive element, which reduces size and cost but may also reduce efficiency.Type: GrantFiled: September 7, 2011Date of Patent: December 15, 2015Assignee: RF Micro Devices, Inc.Inventors: Chris Levesque, Jean-Christophe Berchtold, Joseph Hubert Colles, Robert Deuchars, William David Southcombe, David Zimlich, David E. Jones, Scott Yoder, Terry J. Stockert
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Patent number: 9207692Abstract: An envelope tracking power supply and an offset capacitive element are disclosed. The offset capacitive element is coupled between a switching output and an analog output of the envelope tracking power supply, which operates in one of an envelope tracking mode, a transition mode, and an average power tracking mode. During the envelope tracking mode, the envelope tracking power supply provides an envelope power supply signal using both the switching output and the analog output. During the transition mode, the envelope tracking power supply drives a voltage across the offset capacitive element from a first voltage to a second voltage, such that during a transition from the envelope tracking mode to the transition mode, the offset capacitive element has the first voltage, and during a transition from the transition mode to the average power tracking mode, the offset capacitive element has the second voltage.Type: GrantFiled: October 17, 2013Date of Patent: December 8, 2015Assignee: RF Micro Devices, Inc.Inventors: Nadim Khlat, Michael R. Kay, Mohammad Ahsanul Adeeb
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Patent number: 9209784Abstract: Switchable capacitive elements are disclosed, along with programmable capacitor arrays (PCAs). One embodiment of the switchable capacitive element includes a field effect transistor (FET) device stack, a first capacitor, and a second capacitor. The FET device stack is operable in an open state and in a closed state and has a plurality of FET devices coupled in series to form the FET device stack. The first capacitor and the second capacitor are both coupled in series with the FET device stack. However, the first capacitor is coupled to a first end of the FET device stack while the second capacitor is coupled to a second end opposite the first end of the FET device stack. In this manner, the switchable capacitive element can be operated without a negative charge pump, with decreased bias swings, and with a better power performance.Type: GrantFiled: June 20, 2013Date of Patent: December 8, 2015Assignee: RF Micro Devices, Inc.Inventors: Christian Rye Iversen, Marcus Granger-Jones
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Patent number: 9203596Abstract: A tunable diplexer includes a high pass filter, a low pass filter, a high band port, a low band port, and an antenna port. The high pass filter is adapted to pass high band signals falling within a high pass band between the high band port and the antenna port, while attenuating signals outside of the high pass band. The low pass filter is adapted to pass low band signals falling within a low pass band between the low band port and the antenna port, while attenuating signals outside of the low pass band. The low pass filter includes a low stop band zero, which is adapted to attenuate signals within a low stop band. The low stop band zero is tunable, such that the low stop band can be adjusted to selectively attenuate signals within a given frequency band in the low pass band.Type: GrantFiled: March 28, 2013Date of Patent: December 1, 2015Assignee: RF Micro Devices, Inc.Inventor: Marcus Granger-Jones
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Patent number: 9203353Abstract: A radio frequency (RF) power amplifier (PA) and an envelope tracking power supply are disclosed. The RF PA receives and amplifies an RF input signal to provide an RF transmit signal using an envelope power supply voltage. The envelope tracking power supply provides the envelope power supply voltage based on a setpoint, which has been constrained so as to limit a noise conversion gain (NCG) of the RF PA to not exceed a target NCG.Type: GrantFiled: March 14, 2014Date of Patent: December 1, 2015Assignee: RF Micro Devices, Inc.Inventor: Jean-Frederic Chiron
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Patent number: 9202874Abstract: A gallium nitride (GaN) device with leakage current-based over-voltage protection is disclosed. The GaN device includes a drain and a source disposed on a semiconductor substrate. The GaN device also includes a first channel region within the semiconductor substrate and between the drain and the source. The GaN device further includes a second channel region within the semiconductor substrate and between the drain and the source. The second channel region has an enhanced drain induced barrier lowering (DIBL) that is greater than the DIBL of the first channel region. As a result, a drain voltage will be safely clamped below a destructive breakdown voltage once a substantial drain current begins to flow through the second channel region.Type: GrantFiled: August 2, 2013Date of Patent: December 1, 2015Assignee: RF Micro Devices, Inc.Inventor: Andrew P. Ritenour
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Patent number: 9197162Abstract: A radio frequency (RF) system includes an RF power amplifier (PA), which uses an envelope tracking power supply voltage to provide an RF transmit signal, which has an RF envelope; and further includes an envelope tracking power supply, which provides the envelope tracking power supply voltage based on a setpoint. RF transceiver circuitry, which includes envelope control circuitry and an RF modulator is disclosed. The envelope control circuitry provides the setpoint, such that the envelope tracking power supply voltage is clipped to form clipped regions and substantially tracks the RF envelope between the clipped regions, wherein a dynamic range of the envelope tracking power supply voltage is limited. The RF modulator provides an RF input signal to the RF PA, which receives and amplifies the RF input signal to provide the RF transmit signal.Type: GrantFiled: March 14, 2014Date of Patent: November 24, 2015Assignee: RF Micro Devices, Inc.Inventors: Jean-Frederic Chiron, Nadim Khlat
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Patent number: 9196945Abstract: The disclosure describes a dual hybrid duplexer including two hybrid couplers, two intra-filters, a tunable isolation load, and a phase shifter. The phase shifter may be located at the isolation port. The phase shifter may be located at the antenna port. In one embodiment, a dual hybrid duplexer includes two hybrid couplers, two intra-filters, a tunable isolation load, a first phase shifter located at the isolation port, and a second phase shifter located at the antenna port. The first and second phase shifters have a difference of 90 degrees (plus or minus 10 degrees).Type: GrantFiled: May 29, 2013Date of Patent: November 24, 2015Assignee: RF Micro Devices, Inc.Inventors: Nadim Khlat, Marcus Granger-Jones, Ruediger Bauder
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Patent number: 9197256Abstract: A radio frequency (RF) power amplifier (PA) and an envelope tracking power supply are disclosed. The RF PA receives and amplifies an RF input signal to provide an RF transmit signal using an envelope power supply signal, which at least partially envelope tracks the RF transmit signal, such that the RF input signal has an RF mixer-based artifact. The envelope tracking power supply provides the envelope power supply signal, which includes mixer-based artifact pre-distortion to at least partially remove effects of the RF mixer-based artifact from the RF transmit signal.Type: GrantFiled: October 8, 2013Date of Patent: November 24, 2015Assignee: RF Micro Devices, Inc.Inventor: Nadim Khlat
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Patent number: 9197165Abstract: Embodiments disclosed in the detailed description relate to a pseudo-envelope follower power management system used to manage the power delivered to a linear RF power amplifier.Type: GrantFiled: July 23, 2013Date of Patent: November 24, 2015Assignee: RF Micro Devices, Inc.Inventors: Nadim Khlat, Michael R. Kay
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Patent number: 9197182Abstract: The present disclosure relates to envelope power supply calibration of a multi-mode RF power amplifier (PA) to ensure adequate headroom when operating using one of multiple communications modes. The communications modes may include multiple modulation modes, a half-duplex mode, a full-duplex mode, or any combination thereof. As such, each communications mode may have specific peak-to-average power and linearity requirements for the multi-mode RF PA. As a result, each communications mode may have corresponding envelope power supply headroom requirements. The calibration may include determining a saturation operating constraint based on calibration data obtained during saturated operation of the multi-mode RF PA. During operation of the multi-mode RF PA, the envelope power supply may be restricted to provide a minimum allowable magnitude based on an RF signal level of the multi-mode RF PA, the communications mode, and the saturation operating constraint to provide adequate headroom.Type: GrantFiled: August 27, 2013Date of Patent: November 24, 2015Assignee: RF Micro Devices, Inc.Inventors: Brian Baxter, Jason Millard, Roman Zbigniew Arkiszewski, Steven Selby