Abstract: A package that includes a first filter device and a second filter device coupled to the first filter device. The first filter device includes a first substrate comprising a first piezoelectric material, and a first metal layer coupled to a first surface of the first substrate. The second filter device includes a second substrate comprising a second piezoelectric material, and a second metal layer coupled to a first surface of the first substrate. The package includes a first pillar interconnect configured to be electrically coupled to the first metal layer of the first filter device, where the first pillar interconnect extends through the second filter device. The package further includes a second pillar interconnect configured to be electrically coupled to the second metal layer of the second filter device.

Abstract: A radio frequency multiplexer comprises send and receive circuits each including a RF filter circuit. The send and receive circuits are coupled to an antenna port and corresponding send and receive ports. A portion of the send circuit and a portion of the receive circuit are disposed on a single die. The layer stacks of the resonators of the send and receive circuits disposed on the single die can be optimized for the required functionality.

Abstract: An apparatus and method for making an acoustic filter package where the apparatus includes a base layer; a support layer disposed on the base layer; a piezoelectric structure disposed on the support layer; wherein the piezoelectric structure comprises: a piezoelectric layer; a top electrode on a top surface of the piezoelectric layer; a bottom electrode on a bottom surface of the piezoelectric layer; a contact pad coupled to the bottom electrode that extends through an opening in the piezoelectric layer and is coupled to the bottom electrode or the top electrode; and a corrosion resistant pad disposed on the contact pad; and a capping structure disposed on the piezoelectric structure.

Abstract: A layer system especially for forming SAW devices thereon is proposed comprising a monocrystalline sapphire substrate having a first surface and a crystalline piezoelectric layer comprising MN, deposited onto the first surface, and having a second surface. As a first surface a crystallographic R-plane of sapphire is used enabling an orientation of c-axis of the piezoelectric layer parallel to the first and second surfaces.

Abstract: An RF filter (BPF) with an increased bandwidth is provided. The filter comprises a half-lattice topology and a phase shifter (PS) comprising inductively coupled inductance elements in a parallel branch parallel to a first segment (S1) of a signal path (SP) between a first port (P1) and a second port (P2) of the filter.

Abstract: A bulk acoustic wave resonator device comprises bottom and top electrodes (120, 360). A piezoelectric layer (355) sandwiched therebetween has a thickness in the active resonator area different from the thickness in the surrounding area. A method of manufacturing the device comprises a bonding of a piezoelectric wafer to a carrier wafer and splitting a portion of the piezoelectric wafer by an ion-cut technique. Different thicknesses of the piezoelectric layer in the active area and the surrounding area are achieved by implanting ions at different depths.

Abstract: A filter is provided that includes a set of cascaded resonator stages coupled between a filter input and a first filter output, wherein the filter includes a second filter output coupled to an output of a first or an intermediate one of the set of cascaded resonator stages. Another filter includes a set of cascaded resonator stages coupled between a first filter input and a filter output, wherein the filter includes a second filter input coupled to an input of an intermediate or a last one of the set of cascaded resonator stages. Both filters are configured to apply a first filter frequency response to a first signal propagating via the set of cascaded resonator stages, and apply a second filter frequency response to a second signal propagating via a subset of one or more of the set of cascaded resonator stages.

Abstract: A thin film SAW device comprises a carrier substrate (CA), a TCF compensating layer (CL), a piezoelectric layer (PL), and an IDT electrode (EL) on top of the piezoelectric layer. A functional layer (FL) is arranged between piezoelectric layer and TCF compensating layer to further reduce the TCF. The material properties of the functional layer match those of the piezoelectric layer in view of acoustic velocity, density and stiffness such that they do not deviate from each other by more than 10% without having piezoelectric effect. The functional layer my be of the same crystalline constitution as the useful piezoelectric layer but without piezoelectric properties.

Abstract: A wafer level package comprises a functional wafer with a first surface, device structures connected to device pads arranged on the first surface. A cap wafer, having an inner and an outer surface, is bonded with the inner surface to the first surface of the functional wafer. A frame structure surrounding the device structures is arranged between functional wafer and cap wafer. Connection posts are connecting the device pads on the first surface to inner cap pads on the inner surface. Electrically conducting vias are guided through the cap wafer connecting inner cap pads on the inner surface and package pads on the outer surface of the cap wafer.

Abstract: Certain aspects of the present disclosure provide a surface acoustic wave (SAW) resonator with piston mode design and electrostatic discharge (ESD) protections. An example electroacoustic device generally includes a piezoelectric material and a first electrode structure disposed above the piezoelectric material. The first electrode structure comprises first electrode fingers arranged within an active region having a first region and a second region. At least one of the first electrode fingers has at least one of a different width or a different height in the first region than in the second region, and the first electrode fingers comprise a first electrode finger that has a width or height in the second region that is less than a corresponding width or height of the at least one of the first electrode fingers in the second region.

Abstract: Electro-acoustic resonator and method for manufacturing the same An electro-acoustic resonator comprises an acoustic mirror (120) disposed on a carrier substrate (110), a bottom electrode (130) and a piezoelectric layer (140). A structured silicon dioxide flap layer (150) is disposed on the piezoelectric layer (140), both layers having a common contact surface. Direct disposal of the silicon dioxide (150) on the piezoelectric layer (140) increases the quality factor of the resonator and leads to enhanced RF filter performance.

Abstract: Certain aspects of the present disclosure can be implemented in an electroacoustic device. The electroacoustic device generally includes: a substrate; a bottom electrode layer disposed above the substrate; an acoustic mirror stack having a dielectric layer disposed above the bottom electrode layer and a conductive layer disposed above the dielectric layer; a piezoelectric layer disposed above the acoustic mirror stack; and one or more vias disposed between the bottom electrode layer and the conductive layer, the one or more vias electrically coupling the bottom electrode layer and the conductive layer.

Abstract: Certain aspects of the present disclosure provide a filter circuit and techniques for filtering using the filter circuit. The filter circuit generally includes a first filter stage having a first acoustic wave resonator coupled in a series path between a first port of the filter circuit and a second port of the filter circuit, a first inductor-capacitor (LC) tank circuit, a first capacitor coupled between a first terminal of the first acoustic wave resonator and the first LC tank circuit, the first LC tank circuit being coupled between the first capacitor and a reference potential node, and a second capacitor coupled between a second terminal of the first acoustic wave resonator and the first LC tank circuit. In some aspects, the filter circuit includes one or more other filter stages coupled to the first filter stage.

Abstract: In certain aspects, a chip includes a pad, and a first passivation layer, wherein a first portion of the first passivation layer extends over a first portion of the pad. The chip also includes a first metal layer between the first portion of the pad and the first portion of the first passivation layer. The chip further includes an under bump metallization (UBM) electrically coupled to a second portion of the pad.

Abstract: An improved electro acoustic RF filter (FC) is provided. The RF filter comprises an electro acoustic resonator (EAR) connected between an input port and an output port, an impedance element and a damping and/or dissipation element (DE) in mechanical contact to the impedance element. The damping and/or dissipation element is provided and configured to remove acoustic energy from the impedance element which has a similar construction as the resonator on the same substrate. With such a construction an acoustically inactive impedance element (AIIE) is obtained.

Abstract: An electro acoustic resonator is provided. The resonator has a gap short structure (GSS) to electrically short at least an area of the transversal gap to suppress transversal gap mode excitations. The gap short structure may be provided by a conductive stripe in the gap and parallel to or inclined with respect to the bus bar (BB) shorting adjacent IDT fingers. Additional connectors between the stripe and the bus bar may be provided. The connectors may have different pitch or metallization ratio with respect to the ID fingers. The connectors may be offset from the position of the fingers and my be inclined with respect to the bus bars. Multiple parallel stripes in the gap may provide a transversal reflector. By using a gap short structure a further improved transversal mode suppression of piston mode designs can be achieved.

Abstract: A package for an electric device is proposed based on a substrate (SU, SU1, SU2) that comprises at least a piezoelectric layer. Device structures are enclosed in a cavity of an integrally formed package layer structure (PK) of a thin film package applied on the first surface (SI). A first contact pad (PI) is arranged on the first surface of the substrate and electrically connected to the device structures. A second contact pad (P2) is arranged on a second surface (S2) of the substrate opposite to the first surface (SI). A via (V) is guided through the substrate and interconnects first and second contact pads electrically. Packages may be stacked on one another and connected via two pads of different kind. The first substrate (SU1) is connected via its second pad (P2) on the second surface thereof to the first pad of a second substrate (SU2) by means of connection means (CM).

Abstract: Systems and methods for packaging an acoustic device in an integrated circuit (IC) include walls formed on a wiring substrate. The walls have a height which is just shorter than an expected height of a solder bump on the acoustic device after solder reflow. The walls are positioned on either side of the acoustic device and a small portion lies underneath an exterior edge of the acoustic device such that a relatively small gap is formed between an upper surface of the wall and the lower surface of the acoustic device. By providing a small gap between wall and acoustic device, encroachment by an encapsulating material into a keep out zone of the acoustic device is minimized.

Abstract: An electro-acoustic resonator comprises a piezoelectric substrate on which an electrode structure is disposed. The electrode structure comprises a metal layer of aluminum and copper, a barrier layer forming a barrier against the diffusion of copper and another metal layer disposed on the barrier layer comprising aluminum. An AlCu intermetallic phase formed after an anneal is restricted to the portion beneath the barrier layer so that Galvano-corrosion of the electrode structure is avoided.

Abstract: For a multilayer SAW device arranged on a carrier substrate it is proposed to use a specific material for the carrier substrate. If a silicon material having a selected range of Euler angles is used as a material for the carrier substrat improved suppression of disturbing signals is achieved.