Abstract: For a multilayer SAW device arranged on a carrier substrate it is proposed to use a specific material for the carrier substrate. If a silicon material having a selected range of Euler angles is used as a material for the carrier substrat improved suppression of disturbing signals is achieved.

Abstract: Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators configured to systematically modify phase characteristics of an antenna reflection coefficient. One example is a wireless communication apparatus for a multi-band system comprising a frequency band filter circuit having a filter passband that includes a first band of the multi-band system. The frequency band filter circuit comprises a plurality of resonators coupled between an antenna port and a signal port and a resonant structure electrically coupled to the plurality of resonators. The resonant structure has a resonance outside of the first band and a second band of the multi-band system, the resonance being closer to the second band than to the first band.

Abstract: Certain aspects of the present disclosure provide a filter. The filter generally includes a series resonator coupled between a first port of the filter and a second port of the filter, and a shunt resonator coupled between a node of the filter and a reference potential node of the filter, the node being coupled between the first port and the second port. The shunt resonator typically includes a first piezoelectric substrate, a first plurality of reflectors disposed above the first piezoelectric substrate, and a first plurality of interdigital transducers (IDTs) disposed above the first piezoelectric substrate and between the first plurality of reflectors, wherein the shunt resonator is configured as a dual mode structure (DMS).

Abstract: An improved SAW (SAWR) resonator having an improved power durability and heat resistance and a protection to prevent device failure is provided. The SAW resonator has a carrier substrate (S) and an electrode structure (ES, EF) on a piezoelectric material (PM, PL). Further, the resonator has a shunt path (PCPP) parallel to the electrode structure and provided to enable an RF signal to bypass the electrode structure. The shunt path has a temperature dependent conductance with negative temperature coefficient of resistance.