Abstract: The present invention discloses a direct current (DC) light emitting device control circuit with dimming function, and a method thereof, wherein the dimming function is provided in a feedback loop for feeding back a feedback signal from an output terminal to a power switch control circuit; the feedback signal relates to an output current supplied to the DC light emitting device. The present invention adjusts the feedback signal according to the desired brightness of the DC light emitting device. The present invention controls a power switch according to the adjusted feedback signal, such that the output current supplied to the DC light emitting device is adjusted, and accordingly the brightness of the DC light emitting device is adjusted below the full brightness.

Abstract: The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a well of a substrate. The high voltage device includes: a field oxide region; a gate, which is formed on a surface of the substrate, and part of the gate is located above the field oxide region; a source and a drain, which are formed at two sides of the gate respectively; and a first low concentration doped region, which is formed beneath the gate and has an impurity concentration which is lower than that of the well surrounded, wherein from top view, the first low concentration doped region has an area within the gate and not larger than an area of the gate, and the first low concentration doped region has a depth which is deeper than that of the source and drain.

Abstract: The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT includes a semiconductor layer, a barrier layer on the semiconductor layer, a piezoelectric layer on the barrier layer, a gate on the piezoelectric layer, and a source and a drain at two sides of the gate respectively, wherein each bandgap of the semiconductor layer, the barrier layer, and the piezoelectric layer partially but not entirely overlaps the other two bandgaps. The gate is formed for receiving a gate voltage. A two dimensional electron gas (2DEG) is formed in a portion of a junction between the semiconductor layer and the barrier layer but not below at least a portion of the piezoelectric layer, wherein the 2DEG is electrically connected to the source and the drain.

Abstract: The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance.

Abstract: The present invention discloses a voltage regulator, and a control circuit and a control method therefor. The method for controlling a voltage regulator comprises: receiving a dynamic voltage identification signal which instructs the voltage regulator to change its output voltage to a target voltage, and generating a compensation signal to shorten an interval for the output voltage of the voltage regulator to reach the target voltage.

Abstract: The present invention discloses a hybrid high voltage device and a manufacturing method thereof. The hybrid high voltage device is formed in a first conductive type substrate, and includes at least one lateral double diffused metal oxide semiconductor (LDMOS) device region and at least one vent device region, wherein the LDMOS device region and the vent device region are connected in a width direction and arranged in an alternating order. Besides, corresponding high voltage wells, sources, drains, body regions, and gates of the LDMOS device region and the vent device region are connected to each other respectively.

Abstract: The present invention discloses a double diffused drain metal oxide semiconductor (DDDMOS) device and a manufacturing method thereof. The DDDMOS device is formed in a substrate, and includes a first well, a gate, a diffusion region, a source, and a drain. A low voltage device is also formed in the substrate, which includes a second well and a lightly doped drain (LDD) region, wherein the first well and the diffusion region are formed by process steps which also form the second well and the LDD region in the low voltage device, respectively.

Abstract: The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance.

Abstract: The present invention discloses a charger circuit. The charger circuit comprises a control circuit and at least two charging paths. The control circuit determines to activate or inactivate each charging path according to a battery feedback signal representing the charging status. Accordingly, the battery is charged by input power in an optimal way so that the charging efficiency is improved and the overheating problem is solved.

Abstract: The present invention discloses a short-circuit detection circuit and a short-circuit detection method. The short-circuit detection circuit detects whether an output node is short-circuited to a first predetermined level. A first switch circuit which is controlled by a control signal is coupled between the output node and a second predetermined level. The short-circuit detection circuit includes: a determination circuit, which is coupled between the output node and the second predetermined level, wherein when the determination circuit is enabled, it generates a determination signal according to whether the output node is short-circuited to the first predetermined level; and a second switch circuit, which generates a short-circuit detection signal according to the determination signal.

Abstract: The present invention discloses a multi-phase switching regulator, a driver circuit of a multi-phase switching regulator, and a control method of a multi-phase switching regulator. The multi-phase switching regulator includes: at least two power stages, switching power transistors in the power stages to convert an input voltage to an output voltage according to pulse width modulation (PWM) signals generated by corresponding PWM controllers respectively; and a current balance circuit, generating a current balance signal according to the current of the corresponding power stage and a phase adjustment signal to averagely distribute current over the active power stages. In the present invention, the gain of the current balance circuit is adjustable, to avoid or reduce output voltage overshoot and undershoot when the phase number changes, while the current balance function is still achieved in normal operation.

Abstract: The present invention discloses a rail-to-rail comparator. The rail-to-rail comparator includes: a positive voltage rail providing a positive supply voltage, a ground voltage rail providing a ground voltage, an input stage, and an output stage. The input stage includes: a positive and a negative input terminals for receiving a first input signal and a second input signal; a first differential amplifier circuit, which includes a pair of depletion NMOS transistors to generate a first pair of differential currents; and a second differential amplifier circuit, which includes a pair of native NMOS transistors to generate a second pair of differential currents. The output stage is coupled to the first differential amplifier circuit and the second differential amplifier circuit, and generates an output signal related to a difference between the first input signal and the second input signal.

Abstract: A boundary conduction mode (BCM) switching regulator controls a power stage to convert an input voltage to an output voltage or output current. The BCM switching regulator detects whether it is operating in continuous conduction mode (CCM) or discontinuous conduction mode (DCM), and adjusts the On-time, Off-time, or frequency of the power stage accordingly, so that the switching regulator operates in or near BCM.

Abstract: The present invention discloses a constant on-time switching regulator, a control method therefor, and an on-time calculation circuit for calculating an on-time period of a constant on-time switching regulator. The on-time calculation circuit calculates on-time according to practical conditions. It includes: a driver gate receiving a gate signal of a power switch in a switching regulator, the driver gate operating between high and low levels of a first reference voltage and ground; a low pass filter receiving an output from the driver gate and generating a second reference voltage, a ratio between the second reference voltage and the first reference voltage being substantially the same as a duty ratio of the gate signal; and an on-time generator comparing the second reference voltage with a ramp signal to determine an on-time of the power switch.

Abstract: The present invention discloses a method for controlling the impurity density distribution in semiconductor device and a semiconductor device made thereby. The control method includes the steps of: providing a substrate; defining a doped area which includes at least one first region; partially masking the first region by a mask pattern; and doping impurities in the doped area to form one integrated doped region in the first region, whereby the impurity concentration of the first region is lower than a case where the first region is not masked by the mask pattern.

Abstract: The present invention discloses a light emitting device control method for adjusting the brightness of the light emitting device by an AC signal, comprising: receiving a signal having a turn ON angle and converting the signal to a DC signal; obtaining an average of the DC signal level, the average being a function of the turn ON angle; determining a reference voltage of a current source circuit according to the average of the DC signal level; and controlling a current flow through the light emitting device by the current source circuit.

Abstract: The present invention discloses a switching regulator including: a power stage having an upper gate device and a lower gate device coupled with each other, for converting an input voltage to an output voltage and generating a phase voltage at a node between the upper gate device and the lower gate device; and a control circuit including: a switch operation circuit controlling the power stage, the switch operation circuit generating a test signal turning on the upper gate device for a period of time and then turning it off; and a comparator for generating a ready signal indicating that the input voltage is ready according to comparison between the phase voltage and a reference voltage after the upper gate device is turned off.

Abstract: The present invention discloses a manufacturing method of a high voltage device. The high voltage device is formed in a first conductive type substrate. The high-voltage device includes: a second conductive type buried layer; a first conductive type high voltage well; and a second conductive type body. The high voltage well is formed by the same step for forming a first conductive type well or a first conductive type channel stop layer of a low voltage device formed in the same substrate. The body is formed by the same step for forming a second conductive type well of the low voltage device.

Abstract: The present invention discloses a multi-color light emitting device circuit, which includes: multiple light emitting device strings of different colors, a timing control circuit, a power regulator circuit, and preferably a dark feedback circuit. Each light emitting device string has multiple light emitting devices coupled in series. The number of the light emitting devices of each light emitting device string is determined by an operational voltage of the light emitting device, wherein at least two of the light emitting device strings have different numbers of the light emitting devices, such that voltage drops of the two light emitting device strings are closer to each other than in a case wherein the two light emitting device strings have the same number of the light emitting devices, and the response time of the light emitting device strings are increased.

Abstract: The present invention discloses a control circuit for reducing output ripple in a constant on-time switching regulator and a method thereof, for controlling a power stage. The control circuit determines whether a zero current period wherein an output current is zero is longer than a threshold period, and switches the on-time period to a shorter period if it is longer, whereby the power stage operates according to the shorter period while still in the discontinuous conduction mode (DCM).