Abstract: A polishing pad made of polymeric material has an improved surface layer which is provided by treating a surface of the polishing pad with a chemical solvent. Solubility parameter is used to select a suitable chemical solvent. The treated polishing pad can be conditioned in substantially less time than an untreated pad.

Abstract: A polishing pad for use with a polishing fluid has, a polishing layer, a window in an opening through the polishing layer, and a fluid impermeable layer spanning across the polishing layer and the window and the opening to provide an uninterrupted continuous barrier to leakage of polishing fluid, the fluid impermeable layer having thereon an adhesive forming bond seals with the polishing layer and the window.

Abstract: This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and are sufficiently thin to generally improve predictability and polishing performance.

Abstract: A fixed abrasive, chemical-mechanical polishing system which is particularly well suited for use in the manufacture of semiconductor devices, memory disks or the like.

Abstract: A composition is provided in the present invention for polishing a composite composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an abrasive, an oxidant, an organic polymer that attenuates removal of the oxide film having a degree of polymerization of at least 5 and having a plurality of moieties having affinity to surface groups contained on silicon dioxide surfaces. The composition may optionally comprise a complexing agent and/or a dispersant.

Abstract: This invention describes methods of polishing with pads useful in the manufacture of semiconductor devices or the like. These pads have an advantageous hydrophilic polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance. These pads provide exceptional performance when used for polishing in conjunction with a slurry in which the abrasive particles are stabilized by use of an amino alcohol. They are also useful when used with slurries comprising an organic polymer.

Abstract: A polishing pad having a uniform, continuously interconnected porous surface. The pad is produced by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer. The sintering process is conducted at a pressure in excess of 100 psi and in a mold having the desired final pad dimensions. In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other.

Abstract: A photochemical polishing apparatus is disclosed in which the electromagnetic waves are provided by a waveguide in close proximity to the surface of a silicon wafer electrode.

Abstract: A method of manufacturing semiconductor devices or precursors to semiconductor devices by hydrophobically modifying a device layer to thereby decrease the rate of polishing of the layer by at least 15%. The hydrophobically modified layer can be used as a stop layer to thereby allow for improved planarization of at least one layer of the device.

Abstract: This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The polishing pads of the present invention are formed by sintering or a combination of sintering and molding (including reaction injection molding). The polishing pads of the present invention are made of an advantageous hydrophilic polishing material and have a surface topography and texture which improves their polishing performance.

Abstract: Polishing pads are provided having a polishing surface formed from a hydrophilic material. The polishing surface has a topography produced by a thermoforming process. The topography consists of large and small features that facilitate the flow of polishing fluid and facilitate smoothing and planarizing.

Abstract: A polishing pad for semiconductor wafers having a polishing surface surrounding at least one wafer non-contact region and a method for disengaging a wafer with the polishing pad is disclosed. The wafer non-contact region(s) are located and dimensioned to provide a location for positioning the wafer prior to disengagement, thereby reducing the cohesion force of the slurry resisting the force used for lifting the wafer from the plane of the polishing pad surface. The invention provides safe disengagement of the wafer with the polishing pad, and is especially useful for polishing apparatus employing vacuum retaining means for holding the wafer.

Abstract: A method is provided for the fabrication of a porous polymeric material by electrophoretic deposition. The porous polymeric material is particularly well suited as a polishing surface for the planarization of semiconductor wafers.

Abstract: An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10% which contact the wafer surface in combination with a reactive liquid solution.

Abstract: A dry particulate solids composition is provided which may be reconstituted into a chemical-mechanical polishing slurry.

Abstract: A polishing pad having a uniform, continuously interconnected porous surface. The pad is produced by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer. The sintering process is conducted at a pressure in excess of 100 psi and in a mold having the desired final pad dimensions. In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other.

Abstract: This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance.

Abstract: A method is provided for polishing a composite comprised of silica and silicon nitride wherein a polishing composition is used comprising: an aqueous medium, abrasive particles, a surfactant, an organic polymer viscosity modifier which increases the viscosity of the composition, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: An innovative method of manufacturing polishing pads using photo-curing polymers and photolithography. The photolithography enables the creation of useful surface patterns not possible with conventional machining techniques and enables the use of pad materials otherwise too soft to pattern by conventional machining techniques.

Abstract: An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10% which contact the wafer surface in combination with a reactive liquid solution.