Abstract: A polishing pad is formed as a one-piece article having a region which is transparent and an adjacent region which is opaque. The article is formed by solidifying a flowable polymeric material which at least initially has a uniform composition. The flowable polymeric material is processed during a molding operation to provide the transparent region and the adjacent opaque region. Types of polymeric material suitable for making the polishing pad include a single thermoplastic material, a blend of thermoplastic materials, and a reactive thermosetting polymer.

Abstract: The present invention provides a chemical mechanical polishing method for the planarization of shallow trench isolation structure and other integrated circuit structures. The method of the invention comprises the steps of providing a substrate having a plurality of patterned regions and polishing the substrate with a chemical mechanical polishing slurry comprising small abrasive particles having a mean diameter of between about 2 and 30 nm and large abrasive particles having a mean diameter of between 2 and 10 times larger than the mean diameter of the small abrasive particles. The chemical mechanical polishing slurries can also include viscosity additives and etchants for use in the invention.

Abstract: A composition is provided for polishing a composite comprised of silica and silicon nitride comprising: an aqueous medium, abrasive particles, a surfactant, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: A polishing pad having a substantially uniform, continuously interconnected porous surface. The pad can be produced by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer. The sintering process is conducted in a mold at a pressure in excess of 100 psi (0.07 MPa). In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other.

Abstract: A chemical-mechanical polishing system which is particularly well suited for use in the manufacture of semiconductor devices or the like. The invention is directed to a self-dressing, polishing pad comprising a high modulus phase and a low modulus phase. The multi-phase polishing pads are very efficient and effective in providing high performance polishing along an entire polishing surface interface.

Abstract: A polishing pad for polishing hard surfaces such as glass and silicon wafers and a method of polishing using such a polishing pad.

Abstract: The present invention provides a polishing pad fabricated from both polyester and polyether polyurethanes. Methods for manufacturing the pads and methods for use of the pads for polishing are also provided.

Abstract: Water based polishing slurries, comprising oxide polishing particles. The polishing slurries comprise an innovative (multi-modal) particle distribution for improved polishing performance.

Abstract: A method is provided for photochemical polishing of a silicon wafer using electromagnetic waves within the spectrum of 150 to 2000 nanometers wavelength. A photochemical polishing apparatus is also disclosed in which the electromagnetic waves are provided by a waveguide in close proximity to the surface of a silicon wafer electrode.

Abstract: A polishing pad is provided comprising an upper surface and a lower surface, substantially parallel to one another, wherein the pad has enhanced flexibility produced by scoring of either or both surfaces. The pad thickness is generally greater than 500.mu.. The scoring creates slits having a depth of less than 90% of the thickness.

Abstract: A fixed abrasive, chemical-mechanical polishing system which is particularly well suited for use in the manufacture of semiconductor devices, memory disks or the like.

Abstract: A composition is provided for polishing a composite comprised of silica and silicon nitride comprising: an aqueous medium, abrasive particles, a surfactant, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance.

Abstract: This invention provides polishing pad tiles which, by virtue of their geometry and surface features, can be arranged to form mosaic pads having channels at the seams which facilitate the flow of polishing fluid during polishing of a workpiece.