Abstract: Photoacid generators comprising a moiety of formula (1): wherein: Ar1 is a substituted or unsubstituted aryl group; R1 is an alkyl or aryl group, each of which may be substituted or unsubstituted, wherein Ar1 and R1 are optionally connected together by a single bond or a divalent linking group to form a ring; Y is a single bond or a divalent group; and * is the point of attachment of the moiety to another atom of the photoacid generator. The photoacid generator compounds find particular use in photoresist compositions that can be used to form lithographic patterns for the formation of electronic devices.

Abstract: Compounds having three or more alkynyl moieties substituted with an aromatic moiety having one or more of certain substituents are useful in forming underlayers useful in semiconductor manufacturing processes.

Abstract: A photoresist composition comprising a polymer, a photoacid generator, an additive comprising a tertiary carbon atom as a ring-forming atom of a lactone ring, and a solvent.

Abstract: There is disclosed an optically clear shear thickening fluid and a protection assembly comprising the optically clear shear thickening fluid. It further relates to uses of the optically clear shear thickening fluid in electronic devices, particularly in optical display devices. The optically clear shear thickening fluid includes: (a) a solid nanoparticle having an average particle size equal to or less than 100 nm; (b) at least one polymer; and (c) a liquid medium. The at least one polymer is substantially soluble in the liquid medium.

Abstract: Coating compositions comprise: a curable compound comprising: a core chosen from a C6 carbocyclic aromatic ring, a C2-5 heterocyclic aromatic ring, a C9-30 fused carbocyclic aromatic ring system, a C4-30 fused heterocyclic aromatic ring system, C1-20 aliphatic, and C3-20 cycloaliphatic, and three or more substituents of formula (1) wherein at least two substituents of formula (1) are attached to the aromatic core; provided that no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; a polymer; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition.

Abstract: Photoresist topcoat compositions comprise: a matrix polymer and a surface active polymer, wherein the surface active polymer comprises polymerized units of the following general formula (I): wherein: R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group, or a C1-C4 haloalkyl group; R2 independently represents a hydrogen atom or an optionally substituted alkyl group, wherein at least one R2 is not a hydrogen atom, wherein the R2 groups taken together optionally form a cyclic structure, and wherein the total number of carbon atoms for the R2 groups taken together is from 2 to 20; R3 represents an optionally substituted C1-C4 alkylene group, wherein an R2 group optionally forms a cyclic structure with R3; and R4 independently represents C1-C4 fluoroalkyl groups; wherein the total polymerized units of general formula (I) are present in the surface active polymer in an amount of 95 wt % or more based on total polymerized units of the surface active polymer; and wherein the surface active polymer i

Abstract: Disclosed herein is a pattern formation method, comprising (a) applying a layer of a photoresist composition over a semiconductor substrate, (b) pattern-wise exposing the photoresist composition layer to i-line radiation; and (c) developing the exposed photoresist composition layer to provide a resist relief image; wherein the photoresist composition comprises a non-ionic photoacid generator; a solvent; a first polymer and a second polymer; and wherein the first polymer comprises a polymeric dye.

Abstract: New monomer and polymer materials that comprise one or more Te atoms. In one aspect, tellurium-containing monomers and polymers are provided that are useful for Extreme Ultraviolet Lithography.

Abstract: There is provided a dielectric composite material comprising (a) 20-50 weight % total solids of at least one thermosetting resin and other resin components; and (b) 50-70 weight % total solids of at least one inorganic particulate filler; where the at least one inorganic particulate filler is surface modified with one or more acrylic-based silane coupling agents.

Abstract: Gas sensors are provided. The gas sensors comprise: a substrate; a plurality of electrodes on the substrate; and a polymeric sensing layer on the substrate for adsorbing a gas-phase analyte. The adsorption of the analyte is effective to change a property of the gas sensor that results in a change in an output signal from the gas sensor. The polymeric sensing layer comprises a polymer chosen from substituted or unsubstituted polyarylenes comprising the reaction product of monomers comprising a first monomer comprising an aromatic acetylene group and a second monomer comprising two or more cyclopentadienone groups, or a cured product of the reaction product. The gas sensors and methods of using such sensors find particular applicability in the sensing of gas-phase organic analytes.

Abstract: New Te-salt compounds, including photoactive tellurium compounds useful for Extreme Ultraviolet Lithography.

Abstract: Disclosed herein is a method comprising forming a radiation-sensitive film on a substrate; wherein the radiation-sensitive film comprises a radiation-sensitive composition comprising a photoacid generator; a quencher; an acid labile polymer formed from monomers comprising a vinyl aromatic monomer and a monomer comprising an acid decomposable group; and a solvent; patternwise exposing the radiation-sensitive film to activating radiation; and contacting the radiation-sensitive film with an alkaline developing solution to form a resist pattern.

Abstract: Disclosed herein is a copolymer comprising first polymerized units of the formula (1); wherein: R1 is H or a substituted or unsubstituted C1-C6 alkyl group; and R2 is a substituted or unsubstituted C3-C20 alkyl group that optionally includes one or more of —O—, —S—, —N—, —C(O)—, or —C(O)O—, —N—C(O)—, —C(O)—NR—; wherein R is H or a substituted or unsubstituted C1-C6 alkyl group; and second polymerized units of the formula (2): wherein: R3 is a substituted or unsubstituted C1-C6 alkyl group that optionally includes one or more of —O—, —N—, —S—, —C(O)—, or —C(O)O—; wherein the first polymerized units and the second polymerized units are chemically different, and the copolymer is free of fluorine.

Abstract: A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1): wherein Z? is an organic anion; Ar1 is substituted or unsubstituted C4-60 heteroaryl group comprising a furan heterocycle; and R1 is substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Ar1 and R1 are optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Ar1 or substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through R1 or substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Z? as a pendant group to a polymer; and a solvent.

Abstract: Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a solvent system that comprises 1) a first organic solvent represented by formula (I), wherein R1 and R2 are alkyl groups of 3-8 carbons and the total number of carbons of R1 and R2 is greater than 6; and 2) a second organic solvent that is a C4 to C10 monovalent alcohol.

Abstract: New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

Abstract: Coating compositions comprise: a B-staged reaction product of one or more compounds comprising: a core chosen from C6-50 carbocyclic aromatic, C2-50 heterocyclic aromatic, C1-20 aliphatic, C1-20 heteroaliphatic, C3-20 cycloaliphatic, and C2-20 heterocycloaliphatic, each of which may be substituted or unsubstituted; and two or more substituents of formula (1) attached to the core: wherein: Ar1 is an aromatic group independently chosen from C6-50 carbocyclic aromatic and C2-50 heteroaromatic, each of which may be substituted or unsubstituted; Z is a substituent independently chosen from OR1, protected hydroxyl, carboxyl, protected carboxyl, SR1, protected thiol, —O—C(?O)—C1-6 alkyl, halogen, and NHR2; wherein each R1 is independently chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, and C5-30 aryl; each R2 is independently chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, C5-30 aryl, C(?O)—R1, and S(?O)2—R1; x is an integer from 1 to the total number of available aromatic ring atoms in Ar1

Abstract: A photoresist composition comprises a first polymer formed by free radical polymerization. The first polymer comprises polymerized units formed from a monomer that comprises an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1): and a solvent.

Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract: A UV curable silicone composition has exceptional curability by ultraviolet irradiation.