Abstract: A chemical mechanical polishing pad (104, 400) that includes a polishing layer (108, 420, 500) having a set of primary grooves (124, 408, 516) formed in a polishing surface (110, 428, 520) of the pad. The pad also includes a set of secondary grooves (128, 404, 504) that become selectively active as a function of the wear of the polishing layer from polishing.

Abstract: The present invention provides a method of electrochemical polishing of a workpiece using a polishing pad having a cellular polymeric layer overlying a conductive substrate, the cellular polymeric layer having a thickness less than 1.5 mm; wherein the cellular polymeric layer comprises a plurality of pores that extend through the thickness of the cellular polymeric layer from a polishing surface of the cellular polymeric layer to the conductive substrate; and wherein the plurality of pores exhibit a diameter that is smaller at the polishing surface than at the conductive substrate.

Abstract: An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms; 0 to 15 inhibitor for a nonferrous metal; 0 to 50 abrasive; 0 to 20 complexing agent for a nonferrous metal; and water.

Abstract: The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The aqueous slurry includes by weight percent, 0.01 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 3 polyvinyl pyrrolidone, 0.01 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0.001 to 10 complexing agent formed during polishing and balance water; and the aqueous slurry has a pH of at least 8.

Abstract: A method of manufacturing polymer-coated particles is useful for chemical mechanical polishing magnetic, optical, semiconductor or silicon substrates. First it provides a dispersion of particle cores in a non-aqueous solvent. Then introducing a polymeric precursor into the dispersion to react the polymeric precursor forms a polymer. The polymer coats at least a portion of the surface of the particle cores with the polymer and forms the polymer-coated particles having a solid outer polymeric shell. Substituting the non-aqueous solvent with water forms an aqueous mixture containing the polymer-coated particles. And it forms an aqueous chemical mechanical polishing formulation with the polymer-coated particles without drying the polymer-coated particles.

Abstract: A method of manufacturing a chemical mechanical polishing pad is provided, comprising: providing a polishing layer; providing a chemical mechanical polishing pad manufacturing assembly, comprising: a subpad layer having a top surface, a bottom surface and at least two wrap around tabs; a backing plate having a top side and a bottom side; a sacrificial layer having at least two recessed areas designed to facilitate attachment of the subpad layer to the backing plate; an unset reactive hot melt adhesive applied to the top surface of the subpad layer, wherein the unset reactive hot melt adhesive is applied in a pattern of parallel lines; wherein the subpad layer is disposed on the top side of the backing plate and the sacrificial layer is disposed on the bottom side of the backing plate, and wherein the at least two wrap around tabs extend to the bottom side of the backing plate; stacking the polishing layer and the chemical mechanical polishing pad manufacturing assembly with the unset reactive hot melt adhesiv

Abstract: A chemical mechanical polishing pad manufacturing assembly is provided having a subpad layer having a top surface and a bottom surface; a backing plate having a top side and a bottom side; a sacrificial layer having at least two recessed areas designed to facilitate attachment of a subpad layer to the backing plate; wherein the subpad layer is disposed on the top side of the backing plate and the sacrificial layer is disposed on the bottom side of the backing plate, and wherein the at least two wrap around tabs extend to the bottom side of the backing plate. Also provide is a method of manufacturing a chemical mechanical polishing pad using the chemical mechanical polishing pad manufacturing assembly.

Abstract: Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continuous non-fugitive phase and a substantially co-continuous fugitive phase. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.

Abstract: Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continuous non-fugitive phase and a substantially co-continuous fugitive phase. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.

Abstract: The present invention provides polishing pad for electrochemical mechanical polishing. The pad comprises a cellular polymeric layer overlying a conductive substrate, the cellular polymeric layer having a thickness less than 1.5 mm.

Abstract: Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continuous non-fugitive phase and a substantially co-continuous fugitive phase. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.

Abstract: The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a three-dimensional network of interconnected unit cells (225). The interconnected unit cells (225) are reticulated for allowing fluid flow and removal of polishing debris. A plurality of polishing elements (208) form the three-dimensional network of interconnected unit cells (225). The polishing elements (208) have a mean height (214) to a mean width (222) ratio of at least 3. The polishing surface (200) formed from the plurality of polishing elements (208) remains consistent for multiple polishing operations.

Abstract: The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has an ultimate tensile strength of at least 3,000 psi (20.7 MPa) and polymeric matrix containing closed cell pores. The closed cell pores have an average diameter of 1 to 50 ?m and represent 1 to 40 volume percent of the polishing pad. The pad texture has an exponential decay constant, ?, of 1 to 10 ?m as a result of the natural porosity of the polymeric matrix and a surface texture developed by implementing periodic or continuous conditioning with an abrasive. The surface texture has a characteristic half height half width, W1/2 that is less than or equal to the value of ?.

Abstract: The present invention provides an apparatus for forming a chemical mechanical polishing pad, comprising a tank with polymeric materials, a storage silo with microspheres, a isocyanate storage tank with isocyanates and a premix prep tank for forming a pre-mixture of the polymeric materials and the microspheres. The invention further provides a premix run tank for storing the pre-mixture, a mixer for forming a mixture of the pre-mixture and the isocyanates, a closed mold for reaction-injection molding the mixture and a vacuum for degassing at least one of the tank, isocyanate storage tank or the mold.

Abstract: Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising a polishing texture that exhibits a dimensionless roughness, R, is between 0.01 and 0.75. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.

Abstract: A chemical mechanical polishing pad having an annular polishing track and a concentric center O. The polishing pad includes a polishing layer having a plurality of pad grooves formed therein. The polishing pad is designed for use with a carrier, e.g., a wafer carrier, that includes a polishing ring having a plurality of carrier grooves. Each of the plurality of pad grooves has a carrier-compatible groove shape configured to enhance the transport of a polishing medium beneath the carrier ring on the leading edge of the carrier ring during polishing.

Abstract: A chemical mechanical polishing pad having an annular polishing track and a concentric center O. The polishing pad includes a polishing layer having a plurality of pad grooves formed therein. The polishing pad is designed for use with a carrier, e.g., a wafer carrier, that includes a polishing ring having a plurality of carrier grooves. Each of the plurality of pad grooves has a carrier-compatible groove shape configured to enhance the transport of a polishing medium beneath the carrier ring on the leading edge of the carrier ring during polishing.

Abstract: The polishing pad (104) is useful for polishing at least one of a magnetic, optical and semiconductor substrate (112) in the presence of a polishing medium (120). The polishing pad 104 includes multiple layers of polishing filaments (200, 300, 400, 500) stacked on a base layer (204, 404, 504) of polishing filaments, the multiple layers of polishing filaments (200, 300, 400, 500) having a sequential stacked formation with each layer of the polishing filaments being above and attached to a lower polishing filament, the multiple layers of polishing filaments (200, 300, 400, 500) being parallel to a polishing surface of the polishing pad (104) and wherein individual polishing filaments (202, 302, 402) of the multiple layers of polishing filaments (200, 300, 400, 500) are above an average of at least three polishing filaments (202, 302, 402), to form the polishing pad having an open lattice structure of interconnected polishing filaments (210, 310, 410, 510, 610).

Abstract: The present invention provides a method of manufacturing a porous chemical mechanical polishing pad comprising focusing a laser beam from a laser into a sintering nozzle and injecting the fluidized thermoplastic particles into the sintering nozzle via an injection port. The method further provides sintering the thermoplastic particles with the laser beam and selectively depositing the sintered thermoplastic particles onto a table to form the polishing pad.

Abstract: The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a three-dimensional network of interconnected unit cells (225). The interconnected unit cells (225) are reticulated for allowing fluid flow and removal of polishing debris. A plurality of polishing elements (208, 308 and 408) form the three-dimensional network of interconnected unit cells (225). The polishing elements (208, 308 and 408) have a first end connected to a first adjacent polishing element at a first junction (209, 309 and 409) and a second end connected to a second adjacent polishing element at a second junction (209, 309 and 409) and having a cross-sectional area (222, 322 and 422) that remains within 30% between the first and the second junctions (209, 309 and 409).