Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula I wherein R1, R2 and R3 are each independently selected from a C1-4 alky group; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein the substance according to formula I included in the chemical mechanical polishing composition provides an enhanced silicon oxide removal rate and an improved polishing defectivity performance; and, wherein at least some of the silicon oxide is removed from the substrate.
Type:
Grant
Filed:
March 31, 2010
Date of Patent:
April 30, 2013
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
Abstract: A chemical mechanical polishing pad having a polishing layer with an integral window and a polishing surface adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate, wherein the formulation of the integral window provides improved defectivity performance during polishing. Also provided is a method of polishing a substrate using the chemical mechanical polishing pad.
Type:
Grant
Filed:
July 31, 2012
Date of Patent:
April 30, 2013
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Abstract: A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.
Type:
Application
Filed:
August 15, 2011
Publication date:
February 21, 2013
Applicant:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Yi Guo, Jerry Lee, Raymond L. Lavoie, JR., Guangyun Zhang
Abstract: A method of manufacturing polishing layers for use in chemical mechanical polishing pads is provided, wherein the formation of density defects in the polishing layers is minimized.
Type:
Application
Filed:
August 16, 2011
Publication date:
February 21, 2013
Applicant:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Kathleen McHugh, James T. Murnane, George H. McClain, Durron A. Hutt, Robert A. Brady, Christopher A. Young
Abstract: The present invention relates to a method of manufacturing a polishing pad with embedded polymeric capsules useful for planarizing a substrate in a CMP process using a polishing composition. The method reduces non-uniformity of the polishing pad due to capsule floating, differential heating and capsule expansion by the use of novel capsule materials. The method also increases the efficiency of the manufacturing process by reducing the number of defective products and reducing waste.
Type:
Grant
Filed:
July 27, 2006
Date of Patent:
January 22, 2013
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Abstract: The invention provides a plurality of polymeric particles embedded with silicate that include gas-filled polymeric microelements. The gas-filled polymeric microelements have a shell and a density of 5 g/liter to 200 g/liter. The shell having an outer surface and a diameter of 5 ?m to 200 ?m with silicate particles embedded in the polymer. The silicate particles have an average particle size of 0.01 to 3 ?m. The silicate-containing regions are spaced to coat less than 50 percent of the outer surface of the polymeric microelements; and less than 0.1 weight percent total of the polymeric microelements is associated with i) silicate particles having a particle size of greater than 5 ?m; ii) silicate-containing regions covering greater than 50 percent of the outer surface of the polymeric microelements; and iii) polymeric micro elements agglomerated with silicate particles to an average cluster size of greater than 120 ?m.
Type:
Grant
Filed:
November 12, 2010
Date of Patent:
January 22, 2013
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Andrew R. Wank, Donna M. Alden, Mark E. Gazze, Robert Gargione, Joseph K. So, David Drop, Mai Tieu Banh, Shawn Riley
Abstract: A chemical mechanical polishing pad having a polishing layer with an integral window and a polishing surface adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate, wherein the formulation of the integral window provides improved defectivity performance during polishing. Also provided is a method of polishing a substrate using the chemical mechanical polishing pad.
Type:
Application
Filed:
July 31, 2012
Publication date:
November 22, 2012
Applicant:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition consisting essentially of, as initial components: water; an abrasive; a material selected from ethylene diamine tetra acetic acid and salts thereof; and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.
Type:
Grant
Filed:
April 28, 2011
Date of Patent:
November 13, 2012
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Jaeseok Lee, Yi Guo, Kancharla-Arun Kumar Reddy, Guangyun Zhang
Abstract: The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed with an isocyanate-terminated reaction product formed from a prepolymer reaction of a prepolymer polyol and a polyfunctional isocyanate. The isocyanate-terminated reaction product has 4.5 to 8.7 weight percent unreacted NCO; and the isocyanate-terminated reaction product is cured with a curative agent selected from the group comprising curative polyamines, curative polyols, curative alcoholamines and mixtures thereof. The polishing pad contains at least 0.1 volume percent filler or porosity.
Type:
Grant
Filed:
June 4, 2008
Date of Patent:
October 16, 2012
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Abstract: A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).
Type:
Application
Filed:
June 12, 2012
Publication date:
October 11, 2012
Applicant:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
Abstract: A method of making shape memory chemical mechanical polishing pads is provided, wherein the shape memory chemical mechanical polishing pads comprise a polishing layer in a densified state. Also provided is a method for using the shape memory chemical mechanical polishing pads to polish substrates.
Type:
Application
Filed:
June 12, 2012
Publication date:
October 4, 2012
Applicant:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Richard D. Hreha, Ravichandra V. Palaparthi, Benjamin John Vining
Abstract: A method for polishing a substrate using a pad comprising, a polymeric matrix having microspheres dispersed therein, the polymeric matrix being formed of a water-based polymer or blends thereof, wherein the polymeric matrix is applied on a permeable substrate, and wherein the polishing pad exhibits reduced defectivity and improved polishing performance are provided.
Type:
Grant
Filed:
April 23, 2008
Date of Patent:
September 25, 2012
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Abstract: A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; a water soluble cellulose; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive.
Type:
Application
Filed:
March 3, 2011
Publication date:
September 6, 2012
Applicant:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Hamed Lakrout, Jinjie Shi, Joseph Letizia, Xu Li, Thomas H. Kalantar, Francis Kelley, J. Keith Harris, Christopher J. Tucker
Abstract: A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive.
Type:
Application
Filed:
March 3, 2011
Publication date:
September 6, 2012
Applicant:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Hamed Lakrout, Jinjie Shi, Joseph Letizia, Xu Li, Thomas H. Kalantar, Francis Kelley, J. Keith Harris, Christopher J. Tucker
Abstract: A chemical mechanical polishing pad having a polishing layer with an integral window and a polishing surface adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate, wherein the formulation of the integral window provides improved defectivity performance during polishing. Also provided is a method of polishing a substrate using the chemical mechanical polishing pad.
Type:
Grant
Filed:
June 10, 2009
Date of Patent:
September 4, 2012
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Abstract: Shape memory chemical mechanical polishing methods are provided that use shape memory chemical mechanical polishing pads having a polishing layer in a densified state, wherein the polishing pad thickness and/or groove depth is monitored and the polishing layer is selectively exposed to an activating stimulus causing a transition from the densified state to a recovered state.
Type:
Grant
Filed:
April 15, 2008
Date of Patent:
September 4, 2012
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Gregory P. Muldowney, Ravichandra V. Palaparthi
Abstract: A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a light stable polymeric endpoint detection window, comprising: a polyurethane reaction product of an aromatic polyamine containing amine moieties and an isocyanate terminated prepolymer polyol containing unreacted —NCO moieties; and, a light stabilizer component comprising at least one of a UV absorber and a hindered amine light stabilizer; wherein the aromatic polyamine and the isocyanate terminated prepolymer polyol are provided at an amine moiety to unreacted —NCO moiety stoichiometric ratio of <95%; wherein the light stable polymeric endpoint detection window exhibits a time dependent strain of ?0.02% when measured with a constant axial tensile load of 1 kPa at a constant temperature of 60° C. at 100 minutes and an optical double pass transmission of ?15% at a wavelength of 380 nm for a window thickness of 1.
Type:
Grant
Filed:
September 29, 2010
Date of Patent:
September 4, 2012
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Adam Loyack, Alan Nakatani, Mary Jo Kulp, David G. Kelly
Abstract: The invention provides a polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. It includes a polymeric matrix having a polishing surface. Polymeric microelements are distributed within the polymeric matrix and at the polishing surface of the polymeric matrix. Silicate-containing regions distributed within each of the polymeric microelements coat less than 50 percent of the outer surface of the polymeric microelements. Less than 0.1 weight percent total of the polymeric microelements are associated with i) silicate particles having a particle size of greater than 5 ?m; ii) silicate-containing regions covering greater than 50 percent of the outer surface of the polymeric microelements; and iii) polymeric microelements agglomerated with silicate particles to an average cluster size of greater than 120 ?m.
Type:
Grant
Filed:
November 12, 2010
Date of Patent:
September 4, 2012
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Andrew R. Wank, Donna M. Alden, Joseph K. So, Robert Gargione, Mark E. Gazze, David Drop, Colin F. Cameron, Jr., Mai Tieu Banh, Shawn Riley
Abstract: A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 40 wt % abrasive having an average particle size of 5 to 150 nm; 0.001 to 1 wt % of an adamantyl substance according to formula (II); 0 to 1 wt % diquaternary substance according to formula (I); and, 0 to 1 wt % of a quaternary ammonium compound. Also, provided is a method for chemical mechanical polishing using the chemical mechanical polishing composition.
Type:
Grant
Filed:
June 15, 2010
Date of Patent:
July 31, 2012
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Yi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
Abstract: Shape memory chemical mechanical polishing pads are provided, wherein the shape memory chemical mechanical polishing pads comprise a polishing layer in a densified state. Also provided are methods of making the shape memory chemical mechanical polishing pads and for using them to polish substrates.
Type:
Grant
Filed:
April 15, 2008
Date of Patent:
July 17, 2012
Assignee:
Rohm and Haas Electronic Materials CMP Holdings, Inc.
Inventors:
Richard D. Hreha, Ravichandra V. Palaparthi, Benjamin John Vining