Abstract: The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer, comprising one or more triaryl aminium radical cations having the structure (S1).

Abstract: Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising one or more condensed polymers having an organic polymer chain having pendently-bound moieties having an acidic proton and a pKa in water from ?5 to 13 and having pendently-bound siloxane moieties are provided.

Abstract: Compositions for forming polymer layers useful in the manufacture of display devices, particularly flexible display, and methods of forming such devices are provided.

Abstract: Disclosed herein is a method of forming vias in electrical laminates comprising laminating a sheet having a layer comprising a crosslinkable polymer composition to a substrate wherein the crosslinkable polymer composition has a viscosity at lamination temperatures in the range of 200 Pa-s to 100,000 Pa-s, forming at least one via in the crosslinkable polymer layer by laser ablation; and after the forming of the at least one via, thermally curing the crosslinkable polymer layer. According to certain embodiments the cross linkable polymer composition has a viscosity at lamination temperature of at least 5000 Pa-s. This method yields good lamination results, good via profiles, and good desmear results when such compositions are used and the via is laser ablated before cure.

Abstract: A press-fit terminal for insertion into a conductive through-hole of a substrate includes an elastic deformation part with an outer and inner surface, the press-fit terminal includes, in sequence, a copper or copper alloy base, nickel or a nickel alloy barrier layer, a tin or tin alloy layer and an indium top layer. The press-fit terminal shows reduced whisker formation.

Abstract: An antireflective coating composition, including a polymer, a photoacid generator having a crosslinkable group, a compound capable of crosslinking the polymer and the photoacid generator, a thermal acid generator, and an organic solvent.

Abstract: Polyarylene resins and compositions containing them are useful as underlayers in semiconductor manufacturing processes.

Abstract: Provided is an optoelectronic device comprising an optoelectronic element and circuitry connected to the optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching the optoelectronic element between a configuration in which the circuitry provides an effective forward bias voltage that causes the optoelectronic element to emit light and a configuration in which the circuitry provides an effective reverse bias voltage that causes the optoelectronic element to be capable of generating a photocurrent when light to which the optoelectronic element is sensitive strikes the optoelectronic element.

Abstract: Provided is a composition comprising a compound having structure (I) wherein each of A1, A2, A3, A4, A5, A6, A7, and A8 is independently CR12 or N; wherein one to four of A1, A2, A3, A4, A5, A6, A7, and A8 are N; wherein J1 is C or Si; wherein J2 is C(R13)n, O, (C(R13)n)2, S, NR13, or Se; wherein n is 1 or 2; wherein each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, and R13 is independently H, deuterium, or an organic group. Also provided is a method of making the composition, a method of making an organic light-emitting diode using the composition, and an organic light-emitting diode made by that method.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: Display substrates having a hard coat layer on a colorless polyimide substrate are formed from hard coat compositions having certain organic solvents that do not substantially impact the optical and mechanical properties of the colorless polyimide substrate.

Abstract: A method of manufacturing a semiconductor device comprising: providing a semiconductor device substrate having a relief image on a surface of the substrate, the relief image having a plurality of gaps to be filled; applying a coating composition to the relief image to provide a coating layer, wherein the coating composition comprises (i) a polyarylene oligomer comprising as polymerized units one or more first monomers having two or more cyclopentadienone moieties and one or more second monomers having an aromatic moiety and two or more alkynyl moieties; wherein the polyarylene oligomer has a Mw of 1000 to 6000 Da, a PDI of 1 to 2, and a molar ratio of total first monomers to total second monomers of 1:>1; and (ii) one or more organic solvents; curing the coating layer to form a polyarylene film; patterning the polyarylene film; and transferring the pattern to the semiconductor device substrate.

Abstract: Disclosed herein is a method comprising disposing upon a substrate a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer; where the additive polymer comprises a reactive moiety that is operative to react with a substrate upon which it is disposed; and where the additive polymer comprises a homopolymer that is the chemically and structurally the same as one of the polymers in the block copolymer or where the additive polymer comprises a random copolymer that has a preferential interaction with one of the blocks of the block copolymers; and a solvent; and annealing the composition.

Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Copper electroplating baths containing primary alcohol alkoxylate block copolymers and ethylene oxide/propylene oxide random copolymers having specific HLB ranges are suitable for filling vias with copper, where such copper deposits are substantially void-free and substantially free of surface defects.

Abstract: A polymer composite comprising quantum dots; said polymer composite comprising: (a) quantum dots; (b) polymerized units of a first compound having at least one readily polymerizable vinyl group, a molecular weight from 300 to 20,000 and at least one continuous acyclic hydrocarbyl chain of at least five carbon atoms; and (c) polymerized units of a second compound having at least one readily polymerizable vinyl group and a molecular weight from 100 to 750; wherein a readily polymerizable vinyl group is part of a (meth)acrylate ester group or is attached directly to an aromatic ring, and the molecular weight of the first compound minus the molecular weight of the second compound is at least 100.

Abstract: Photoresist compositions are provided comprising a radiation sensitive component and at least two distinct novolak resins. In one aspect, photoresists of the invention exhibit notably high dissolution rates, such as in excess of 800 angstroms per second in aqueous developer solution. In another aspect, photoresists of the invention can exhibit good photospeeds, such as 100 mJ/cm2 or less.

Abstract: A patterning process, comprises: (i) forming a radiation-sensitive film on a substrate, wherein the radiation-sensitive film comprises: (a) a resin, (b) a photoacid generator, (c) a first quencher, and (d) a second quencher; (ii) patternwise exposing the radiation-sensitive film to activating radiation; and (iii) contacting the radiation-sensitive film with an alkaline developing solution to form a resist pattern; wherein the resin comprises the following repeat units: wherein: R1 is selected from a hydrogen atom, an alkyl group having from 1 to 4 carbon atoms, a cyano group or a trifluoromethyl group; Z is a non-hydrogen substituent that provides an acid-labile moiety; n is from 40 to 90 mol %; m is from 10 to 60 mol %; and the total combined content of the two repeat units in the resin is 80 mol % or more based on all repeat units of the resin; and the first quencher is selected from benzotriazole or a derivative thereof.

Abstract: Provided is a method of creating an image on an array of optoelectronic elements comprising (a) providing a device comprising an array of optoelectronic elements and circuitry connected to each optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching each optoelectronic element independently between an effective forward bias configuration and a reverse-bias configuration, (b) imposing an effective reverse bias on two or more of the optoelectronic elements, (c) providing circuitry that will detect the onset of photocurrent from an individual effective reverse biased optoelectronic element and that will respond to the photocurrent by changing the bias on the individual optoelectronic element to an effective forward bias.

Abstract: Copper electroplating compositions which include an imidazole compound enables the electroplating of copper having uniform morphology on substrates. The composition and methods of enable copper electroplating of photoresist defined features. Such features include pillars, bond pads and line space features.