Abstract: A synergistic antimicrobial composition containing flurochloridone and zinc pyrithione is provided. Also provided is a method of inhibiting the growth of or controlling the growth of microorganisms in a building material by adding such a synergistic antimicrobial composition. Also provided is a coating composition containing such a synergistic antimicrobial composition, and a dry film made from such a coating composition.

Abstract: A rotation control apparatus includes: a controller configured to supply test currents to a plurality of different paths of a motor when the motor is stopped; and a stop position detector configured to detect a rotational position of the motor based on an order of current values of the test currents. The controller causes one of the test currents to flow through one of the plurality of different paths, measure time taken until the corresponding detection voltage reaches a reference voltage, and set electrical conduction time of the test currents based on a result of the measurement.

Abstract: A synergistic antimicrobial composition containing chlorotoluron and 3-Iodo-2-propynyl butylcarbamate is provided. Also provided is a method of inhibiting the growth of or controlling the growth of microorganisms in a building material by adding such a synergistic antimicrobial composition. Also provided is a coating composition containing such a synergistic antimicrobial composition, and a dry film made from such a coating composition.

Abstract: A semiconductor device includes a semiconductor chip, and a terminal connected with the semiconductor chip. The terminal has a first surface and a second surface spaced from each other in a thickness direction. The semiconductor device also includes a sealing resin covering the semiconductor chip and the terminal. The sealing resin is so configured that the first surface of the terminal is exposed from the sealing resin. The terminal is formed with an opening to be filled with the sealing resin.

Abstract: An LED lamp includes LED chips, a translucent cover housing the LED chips, a motion sensor unit, a condensing lens, and a power unit. The motion sensor unit includes a light receiving element for light of a predetermined wavelength. The lens condenses light of the predetermined wavelength onto the light receiving element. The power unit controls the state of operation of the LED chips based on an output from the motion sensor unit. The motion sensor unit includes a light shielding member disposed to overlap the light receiving element in an optical axis direction of the condensing lens and also to surround the light receiving element as viewed in the optical axis direction. The light shielding member is made of a material having a lower light transmissivity than that of the condensing lens for a range of wavelengths including the predetermined wavelength.

Abstract: The semiconductor device of the present invention includes a semiconductor substrate provided with semiconductor elements, a lower layer wiring pattern which includes first wiring and second wiring, the first wiring and the second wiring disposed separately so as to be flush with each other, and the first wiring and the second wiring being fixed at a mutually different potential, an uppermost interlayer film disposed on the lower layer wiring pattern, a titanium nitride layer disposed on the uppermost interlayer film so as to cover the first wiring and the second wiring, and the titanium nitride having the thickness of 800 ? or more, and a pad metal disposed on the titanium nitride layer.

Abstract: A method for polymerizing an aromatic multi-functional carbodiimide by contacting the aromatic multi-functional carbodiimide with a carboxylic acid salt at a temperature from 15° C. to 90° C.

Abstract: A semiconductor device includes a substrate that is made of a semiconductor material and has a main surface formed with a recess. The semiconductor device also includes a wiring layer formed on the substrate, an electronic element housed in the recess, and a sealing resin covering at least a part of the electronic element.

Abstract: There is provided a waterborne adhesive composition comprising (a) one or more bromine substituted olefin polymer, (b) one or more halosulfonated olefin polymer, (c) one or more compatibilizer selected from the group consisting of epoxy resins, phenolic resins, chlorinated polyolefin, and mixtures thereof. Also provided is a method of bonding substrates using such an adhesive composition, and an article formed by such a method of bonding substrates.

Abstract: Disclosed herein is a composition comprising a regioregular polyalkylthiophene and/or a regioregular poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene]; and a metallocene; where the metallocene is present in an amount of greater than 75 wt %, based on the total weight of the composition; where the charge mobility is increased by a factor of 3 or more over compositions having 50 wt % of ferrocene or less with the remainder being a regioregular polyalkylthiophene and/or a regioregular poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene].

Abstract: A synergistic antimicrobial composition containing chlorotoluron and 2-n-octyl-4-isothiazolin-3-one is provided. Also provided is a method of inhibiting the growth of or controlling the growth of microorganisms in a building material by adding such a synergistic antimicrobial composition. Also provided is a coating composition containing such a synergistic antimicrobial composition, and a dry film made from such a coating composition.

Abstract: A control circuit for controlling a switching transistor of a switching regulator includes a hysteresis comparator circuit comparing a feedback voltage according to an output signal of the switching regulator with a reference voltage and a threshold voltage and outputting a pulse width modulation signal as an output signal of the hysteresis comparator circuit, where the threshold voltage has a hysteresis according to the pulse width modulation signal. The control circuit further includes a driver driving the switching transistor based on the pulse width modulation signal, a phase comparator generating a phase difference signal based on a phase difference between a reference clock signal and a pulse signal corresponding to the pulse width modulation signal, and a loop filter generating a control voltage by filtering the phase difference signal. The hysteresis comparator circuit is further configured to control a response speed thereof depending on the control voltage.

Abstract: In a first aspect, methods are provided that comprise: (a) applying a curable composition on a substrate; (b) applying a hardmask composition above the curable composition; (c) applying a photoresist composition layer above the hard mask composition, wherein one or more of the compositions are removed in an ash-free process. In a second aspect, methods are provided that comprise (a) applying an organic composition on a substrate; (b) applying a photoresist composition layer above the organic composition, wherein the organic composition comprises a material that produce an alkaline-soluble group upon thermal and/or radiation treatment. Related compositions also are provided.

Abstract: Provided are gap-fill methods.

Abstract: A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 ? or smaller. The interface between the source electrode and the source region is silicidized.

Abstract: A semiconductor device includes a p-type semiconductor layer, n-type column regions formed of columnar thermal donors exhibiting an n-type property, a p-type column region interposed between the n-type column regions, the n-type column regions configured to form a super-junction structure in cooperation with the p-type column region, a channel region formed in the semiconductor layer, a source region formed in the channel region, a gate insulator film formed on the semiconductor layer, and a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film.

Abstract: A plurality of insulating film rings are selectively formed on a front surface of an Si substrate, and surface pads are formed opposite openings of the insulating film rings. Next, by etching the Si substrate from a back surface, through holes that pass through the openings of the insulating film rings and reach the surface pads are formed. Through electrodes that connect electrically with the surface pads are formed by forming a via insulating film (35) on the sides of the through holes and then filling the through holes with electrode material.

Abstract: A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

Abstract: A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

Abstract: A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface; and, an endpoint detection window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: an isocyanate terminated urethane prepolymer having 5.5 to 9.5 wt % unreacted NCO groups, wherein the isocyanate terminated urethane prepolymer is a reaction product of ingredients comprising: an aromatic polyfunctional isocyanate; and, a prepolymer polyol; and, a curative system, comprising: 0 to 90 wt % of a difunctional curative; and, 10 to 100 wt % of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule. Also provide are methods of making and using the chemical mechanical polishing pad.