Abstract: Described are methods for encapsulating a personal care active, comprising preparing an aqueous phase, comprising partially hydrolyzed polyvinyl alcohol and a cosmetically acceptable non-ionic surfactant, preparing an oil phase, comprising the personal care active and isocyanate or polyisocyanate, homogenizing the aqueous phase and oil phase to form an emulsion with particles less than one micron, and forming a dispersion of polyurea core-shell particles containing the personal care active by contacting the emulsion with an aqueous amine solution.

Abstract: A nitride based semiconductor device includes: a substrate; a first buffer layer disposed on the substrate; a second buffer layer disposed on the first buffer layer; a third buffer layer disposed on the second buffer layer, the third buffer layer including an AlGaN-based nitride semiconductor; a fourth buffer layer disposed on the third buffer layer, the fourth buffer layer including a GaN-based nitride semiconductor; a barrier layer disposed on the fourth buffer layer, the barrier layer including an AlGaN-based nitride semiconductor; and a source electrode and a drain electrode, each disposed on the barrier layer, and a gate electrode disposed between the source electrode and the drain electrode, wherein the third buffer layer is subjected to lattice relaxation. There can be provided a nitride based semiconductor device capable of reducing a leakage current and improving breakdown capability.

Abstract: A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer.

Abstract: The semiconductor device includes a semiconductor substrate, a plurality of source regions formed in a stripe shape on the semiconductor substrate, a plurality of gate electrodes formed in a stripe shape between a plurality of the stripe shaped source regions on the semiconductor substrate, an insulating film for covering the source regions and the gate electrodes, the insulating film including a contact hole for partly exposing the source regions in a part of a predetermined region with respect to a longitudinal direction of the source regions; and a source electrode formed on the insulating film and electrically connected to the source region via the contact hole.

Abstract: A main processor of mobile phone changes from power saving state to active state for changing display in response to a sub processor for sensors, the main processor returning to the power saving state after changing the display. The main processor changes from power saving state to active state for storing information from the sub processor, the main processor returning to the power saving state after the storing function. The main processor selects the stored display data on the basis of the information from the sub processor to change display. The main processor receives and stores information from the sub processor in the boot up process or before finishing the operation. The sub processor is in the active state so as to control the sensor even in a case where the main processor is in the power saving state.

Abstract: An LED module A1 includes an LED chip 1, a lead group 4 including a lead 4A on which the LED chip 1 is mounted and a lead 4B spaced apart from the lead 4A, a resin package 2 covering part of the lead group 4, and mounting terminals 41 and 42 provided by part of the lead group 4 that is exposed from the resin package 2 and spaced apart from each other in direction x. The LED module further includes a mounting terminal 43 spaced apart from the mounting terminal 41 in direction y, and a mounting terminal 44 spaced apart from the mounting terminal 42 in direction y. This arrangement allows the LED module A1 to be mounted at a correct position on a circuit board.

Abstract: Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.

Abstract: A diode includes: a p-type semiconductor substrate; an n-type semiconductor layer; a p-type isolation region formed to surround a predetermined region of the n-type semiconductor layer on the p-type semiconductor substrate; an n-type buried layer formed across the p-type semiconductor layer and the n-type semiconductor layer within the predetermined region; an n-type collector wall formed in the n-type semiconductor layer; a p-type anode region and a plurality of n-type cathode regions formed in a diode formation region; and a p-type guard ring formed to surround the diode formation region in a region between the diode formation region of the surface layer of the n-type semiconductor layer and the p-type isolation region. A transistor for reducing a leakage current is formed by the p-type anode region, the p-type guard ring, and an n-type semiconductor between the p-type anode region and the p-type guard ring.

Abstract: A composition and method for tungsten is provided comprising: a metal oxide abrasive; an oxidizer; a tungsten removal rate enhancing substance according to formula I; and, water; wherein the polishing composition exhibits an enhanced tungsten removal rate and a tungsten removal rate enhancement.

Abstract: A microchip to be used for measuring a plurality of types of objects to be measured. The microchip includes at least a reagent retaining portion and a detecting portion. The test reagent retaining portion includes a plurality of types of test reagents corresponding respectively to the plurality of types of objects to be measured. A plurality of time courses for a change in detected value at the detecting portion caused by a reaction between the test reagents and the objects to be measured corresponding respectively thereto are all different from each other.

Abstract: A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member.

Abstract: An image sensor module includes: a sensor IC having light receivers arranged in a main scanning direction; a lens unit configured to form an image on the sensor IC with light transferred from a read target; a first light source unit having a first output surface extending along the main scanning direction and outputting a first linear light extending along the main scanning direction from the first output surface toward the read target, the first output surface being placed at a position spaced apart from the lens unit in a sub-scanning direction; and a second light source unit having a second output surface extending along the main scanning direction and outputting a second linear light extending along the main scanning direction from the second output surface toward the read target, the second output surface being placed between the lens unit and the first output surface in the sub-scanning direction.

Abstract: A semiconductor light emitting device which can control of current density and can optimize current density and in which a rise in luminosity is possible, and a fabrication method of the semiconductor light emitting device are provided.

Abstract: A control circuit of a switching converter includes a current detection comparator for comparing a detection voltage corresponding to a voltage drop of a detection resistor with a reference voltage and generating a peak current detection signal asserted when the detection voltage reaches the reference voltage, a driving logic unit for generating a pulse signal indicating a turn-on/off operation of a switching transistor and changing the pulse signal to an OFF level indicating the turn-off operation of the switching transistor when the peak current detection signal is asserted, a driver for driving the switching transistor based on the pulse signal, and a reference voltage setting unit for measuring time (TRECT) for which a current flows through a secondary coil and a switching period (T) of the switching transistor and adjusting the reference voltage (VREF) according to an equation: VREF=K×T/TRECT where K is a coefficient.

Abstract: The present invention relates to a process comprising contacting methyl methacrylate or styrene; a C1-C10-alkyl acrylate; and a polymerizable carboxylic acid monomer with a stable aqueous dispersion of first polymer particles, under emulsion polymerization conditions, to form a stable aqueous dispersion of second polymer particles. The first polymer particles have a Tg in the range of from ?30° C. to 30° C., and the monomers have a calculated Tg in the range of 50° C. to 120° C. The present invention also relates to the dispersion of second polymer particles, which is useful as a binder to improve freeze-thaw stability in a coatings formulation.

Abstract: Compositions useful for improving the adhesion of coating compositions, such as dielectric film-forming compositions, include a hydrolyzed poly(alkoxysilane). These compositions are useful in methods of improving the adhesion of coating compositions to a substrate.

Abstract: A high luminance semiconductor light emitting device including a metallic reflecting layer formed using a non-transparent semiconductor substrate is provided. The device includes a GaAs substrate; a metal layer disposed on the GaAs substrate; and a light emitting diode structure. The light emitting diode structure includes a patterned metal contact layer and a patterned insulating layer disposed on the metal layer, a p type cladding layer disposed on the patterned metal contact layer and the patterned insulating layer, a multi-quantum well layer disposed on the p type cladding layer, an n type cladding layer disposed on the multi-quantum well layer, and a window layer disposed on the n type cladding layer. The GaAs substrate and the light emitting diode structure are bonded by using the metal layer.

Abstract: Emulsion polymer particles comprising from 25 to 45 wt % polymerized residues of at least one C3-C6 carboxylic acid monomer and from 0.1 to 2 wt % polymerized residues of at least one crosslinker, wherein the particles have a Tg which occurs over a range of at least 60° C.

Abstract: An LED power supply device disclosed in the present specification includes a DC dimmer circuit that performs dimming control of an LED such that the higher a reference voltage variably controlled according to a dimmer signal is, the smaller a current flowing in the LED is. This configuration makes it possible to achieve fine dimming control.

Abstract: Compositions containing an adhesive material and a release additive are suitable for temporarily bonding two surfaces, such as a wafer active side and a substrate. These compositions are useful in the manufacture of electronic devices where a component, such as an active wafer, is temporarily bonded to a substrate, followed by further processing of the active wafer.