Abstract: The present invention relates to a process for preparing polyalkylene glycol di(meth)acrylates by reacting polyalkylene glycol with (meth)acrylic anhydride, wherein the reaction mixture contains at most 0.5% by weight of metal compounds and/or amines, the reaction is carried out in the presence of polymerization inhibitors and the reaction temperature is at least 60° C.

Abstract: An opacifying particle including a certain pigment particle at least partially encapsulated in a polymeric shell having a calculated thickness of from 35 nm to 200 nm, the polymeric shell including at least a first polymer phase and a second polymer phase, wherein the first polymer is substantially in contact with the surface of the pigment particle providing a calculated shell thickness of at least 25 nm and wherein the first polymer has a refractive index of at least 0.03 units less than that of the second polymer is provided. Further provided is a composition including certain pigment particles at least partially encapsulated in a shell of a first polymer having a calculated thickness of from 25 nm to 200 nm, and the encapsulated pigment particles in contact with a second polymer, wherein the first polymer has a refractive index of at least 0.03 units less than that of the second polymer.

Abstract: A motor driving device of the present invention includes: a driver that receives supply of a power supply voltage to apply a plurality of phase voltages to a motor; a voltage-division phase voltage generation portion that divides each of the phase voltages to generate a plurality of voltage-division phase voltages; a neutral point voltage generation portion that combines and divides the phase voltages to generate a neutral point voltage; a selector that outputs any one of the voltage-division phase voltages as a selection voltage-division phase voltage; a comparator that compares the selection voltage-division phase voltage and the neutral point voltage to generate a comparison signal; and a controller that generates a selection control signal of the selector and an energization control signal of the driver according to the comparison signal.

Abstract: A process of pretreatment for selective application of electroless metallization to a surface of a non-conductive material and a solution useful for the pretreatment are provided. The process achieves good coverage in areas to be plated on the surface of non-conductive materials without skip plating or over plating.

Abstract: New photoresist compositions are provided that comprise a component that comprises a radiation-insensitive ionic compound. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a radiation-insensitive ionic compound that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

Abstract: Compositions suitable for temporarily bonding two surfaces, such as a wafer active side and a substrate, are disclosed. Methods of temporarily bonding two surfaces, such as the active side of a wafer and a substrate using the compositions disclosed herein are also provided.

Abstract: A semiconductor device has a first chip and a second chip sealed in a single package. The first chip includes a regulator which generates an internal voltage from a supply voltage, a reset circuit which monitors the supply voltage and the internal voltage to generate a reset signal, and a controlled circuit which operates by being supplied with the supply voltage. The second chip includes a controlling circuit which generates a control signal for the controlled circuit by being supplied with the internal voltage. The reset signal is fed to both the controlling circuit and the controlled circuit.

Abstract: A Schottky barrier diode includes a semiconductor layer having a plurality of trenches formed by digging in from a top surface and having mesa portions formed between adjacent trenches, and a Schottky metal formed to contact the top surface of the semiconductor layer including inner surfaces of the trenches.

Abstract: The semiconductor device has the CSP structure, and may include a plurality of electrode pads formed on a semiconductor integrated circuit in order to input/output signals from/to exterior; solder bumps for making external lead electrodes; and rewiring. The solder bumps may be arranged in two rows along the periphery of the semiconductor device. The electrode pads may be arranged inside the outermost solder bumps so as to be interposed between the two rows of solder bumps. Each trace of the rewiring may be extended from an electrode pad, and may be connected to any one of the outermost solder bumps or any one of the inner solder bumps.

Abstract: New photoresist compositions are provided that comprise a component that comprises a thermal acid generator and a quencher. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and at least one thermal acid generator and at least one quencher that can function to improve line width roughness and photospeed.

Abstract: Compositions useful for improving the adhesion of coating compositions, such as dielectric film-forming compositions, to a substrate are provided. Also provided are methods of improving the adhesion of coating compositions to a substrate.

Abstract: Compositions useful for improving the adhesion of coating compositions, such as dielectric film-forming compositions, include a hydrolyzed poly(alkoxysilane). These compositions are useful in methods of improving the adhesion of coating compositions to a substrate.

Abstract: A semiconductor device according to the present invention includes a semiconductor layer provided with a gate trench, a first conductivity type source region formed to be exposed on a surface side of the semiconductor layer, a second conductivity type channel region formed on a side of the source region closer to a back surface of the semiconductor layer to be in contact with the source region, a first conductivity type drain region formed on a side of the channel region closer to the back surface of the semiconductor layer to be in contact with the channel region, a gate insulating film formed on an inner surface of the gate trench, and a gate electrode embedded inside the gate insulating film in the gate trench, while the channel region includes a channel portion formed along the side surface of the gate trench so that a channel is formed in operation and a projection projecting from an end portion of the channel portion closer to the back surface of the semiconductor layer toward the back surface.

Abstract: The present invention provides continuous methods of making ready to use aqueous soy binders comprising extruding in a twin screw extruder wet non-water soluble soy flour in grind phase mixing and, downstream, including further a polycarboxy emulsion copolymer in distributive phase mixing, wherein in the aqueous binders the amount of soy flour solids ranges from 51 to 95 wt. %, based on the total weight of binder solids. The present invention provides continuous and simple methods for providing aqueous binders wherein the soy flour has a sieve particle size ranging from 5 to 44 ?m. Making soy flours of such a particle size enables soy flour binder compositions useful as binders for non-wovens, such as mineral fiber or glass mats.

Abstract: An analog-switch circuit (1) having: a resistor (R1); a resistor (R2); a CMOS analog switch (S1) in which a first end is connected to an input end (Vin) via the resistor (R1), and a second end is connected to an output end (Vout); and a CMOS analog switch (S2), in which a first end is connected to the first end of the analog switch (S1), and a second end is connected to a ground end via the resistor (R2). The CMOS analog switch (S2) is turned on or off in antiphase to the analog switch (S1).

Abstract: This invention relates to a primerless removable or repositionable pressure sensitive tape or label comprises a porous substrate material, and a pressure sensitive adhesive (PSA) composition comprising (i) 10 to 90 wt. %, based on the combined weight of parts (i) and (ii), of one or more aqueous adhesive (co)polymer, and (ii) 90 to 10 wt. %, based on the combined weight of parts (i) and (ii), of one of more water-dispersed thermoplastic material, wherein the water-dispersed thermoplastic material is incompatible with the aqueous adhesive (co)polymer.

Abstract: A low-side off-detection signal compares the gate signal of a low-side transistor with a predetermined first level to generate a low-side off-detection signal indicating that the low-side transistor is off. The low-side detection transistor is of the same type as the low-side transistor, with the source connected to the ground terminal, and the gate receiving the low-side transistor gate signal. A first resistor is arranged between the drain of the low-side detection transistor and the power supply terminal. A first bypass circuit is arranged in parallel with the first resistor, and is configured to switch to the conduction state when a control signal is a level which instructs the low-side transistor to switch off, and to switch to the cut-off state when the control signal level instructs the low-side transistor to switch on. The drain signal of the low-side detection transistor is output as the low-side off-detection signal.

Abstract: A lighting apparatus of the present invention includes: a light source; a power source unit arranged to power the light source; a detector unit arranged to detect the deterioration of ability of the power source unit to power the light source; and a determination unit arranged to determine the life of the power source unit in response to the detector unit.

Abstract: The present invention provides a method of manufacturing a nitride semiconductor capable of improving the crystallinity and the surface state of the nitride semiconductor crystal formed on top of a high-temperature AlN buffer layer. An AlN buffer layer is formed on top of a growth substrate, and then nitride semiconductor crystals are grown on top of the AlN buffer layer. In a stage of manufacturing the nitride semiconductor, the crystal of the AlN buffer layer is grown at a high temperature of 900° C. or higher. In addition, an Al-source material of the AlN buffer layer is started to be supplied first to a reaction chamber and continues to be supplied without interruption, and then a N-source material is supplied intermittently.

Abstract: A block copolymer composition containing a diblock copolymer blend including a first poly(methyl methacrylate)-b-poly((trimethylsilyl)methyl methacrylate) diblock copolymer; and, a second poly(methyl methacrylate)-b-poly((trimethylsilyl)methyl methacrylate) diblock copolymer. Also provided are substrates treated with the block copolymer composition.