Abstract: The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type made of SiC, a body region of a second conductivity type formed on a surface layer portion of the semiconductor layer, a gate trench dug down from a surface of the semiconductor layer with a bottom surface formed on a portion of the semiconductor layer under the body region, source regions of the first conductivity type formed on a surface layer portion of the body region adjacently to side surfaces of the gate trench, a gate insulating film formed on the bottom surface and the side surfaces of the gate trench so that the thickness of a portion on the bottom surface is greater than the thickness of portions on the side surfaces, a gate electrode embedded in the gate trench through the gate insulating film, and an implantation layer formed on a portion of the semiconductor layer extending from the bottom surface of the gate trench to an intermediate portion of the semiconductor layer in the t

Abstract: A semiconductor device according to the present invention includes: a semiconductor substrate; a source region formed in a top layer portion of the semiconductor substrate; a drain region formed in the top layer portion of the semiconductor substrate and spaced apart from the source region; a gate electrode formed on the semiconductor substrate and opposing to an interval between the source region and the drain region; a wiring formed on the semiconductor substrate and connected to the source region, the drain region, or the gate electrode; and a MEMS sensor disposed on the semiconductor substrate. The MEMS sensor includes: a thin film first electrode made of the same material as the gate electrode and formed in the same layer as the gate electrode; and a second electrode made of the same material as the wiring, formed in the same layer as the wiring, and spaced apart from the first electrode at a side opposite to the semiconductor substrate side of the first electrode.

Abstract: A two-component urethane system. The first component is a hydroxy-terminated polyester polyol containing polymerized residues of phthalic acid and an aliphatic diol having Mn from 60 to 150, and having no more than 15 wt % polymerized residues of aliphatic acids. The second component is an isocyanate-terminated prepolymer containing polymerized residues of diphenyl methane diisocyanate and/or toluene diisocyanate and a glycol or polyol having Mn from 90 to 1000.

Abstract: A switch driving circuit has: a switch signal generator adapted to generate switch signals to complementarily turn on and off switches connected in parallel between a node to which an input voltage is applied and a node to which a ground voltage is applied; drivers adapted to generate gate signals in response to the switch signals; and a dead time setter adapted to set dead times during which the switches are both kept off. At least one of the drivers includes a slew rate setter adapted to vary the slew rate of the gate signals according to a slew rate setting signal. The dead time setter controls to vary at least one of the dead times according to at least one of the slew rate setting signal and the input voltage.

Abstract: There is provided solution testing equipment which can detect an output variation of a THz oscillation device using a THz wave (h?) by contacting a liquid or cells on an RTD oscillation device, and can reduce the size and weight thereof. The solution testing equipment includes: a THz oscillation device configured to radiate the THz wave Is; a THz detection device configured to receive the THz wave Is; and a solution as a test object disposed on the THz oscillation device, in which the solution is tested on the basis of output characteristics of the terahertz wave varying in response to a relative permittivity of the solution.

Abstract: A semiconductor device of the present invention includes a resin package, a semiconductor chip sealed in the resin package, and having first and second pads on a front surface, a lead integrated island sealed in the resin package, to one surface of which a back surface of the semiconductor chip is bonded, and the other surface of an opposite side to the one surface of which is partially exposed from a bottom surface of the resin package as a first pad connecting terminal for electrical connection between the first pad and outside and a back connecting terminal for electrical connection between the back surface of the semiconductor chip and outside separately from each other, and a lead formed separately from the lead integrated island, sealed in the resin package, one surface of which is connected with the second pad by a wire, and the other surface of an opposite side to the one surface of which is exposed from a bottom surface of the resin package as a second pad connecting terminal for electrical connectio

Abstract: A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film.

Abstract: A BEMF detection circuit generates a rotation detection signal indicating a comparison result between electromotive force voltages VU through VW which occur at a terminal of respective multiple coils and an intermediate-point voltage VCOM. A rotor position detection circuit generates a rotor position detection signal indicating a stopped rotor position An internal start-up synchronization signal generating unit generates a predetermined-frequency forced synchronization signal. Upon receiving a fan motor start-up instruction, a driving signal synthesizing circuit generates a driving control signal based upon the rotor position detection signal. Thus, (1) when back electromotive force voltage occurs, a sensorless driving operation is started based upon the rotation detection signal; (2) when it does not occur, the driving control signal is generated based upon the forced synchronization signal. Subsequently, when it occurs, the sensorless driving operation is started based upon the rotation detection signal.

Abstract: A pulse modulator generates a first pulse signal having a duty ratio which is adjusted such that a detection voltage which indicates the electrical state of an LED string to be driven matches a predetermined reference voltage. A first pulse signal is applied to a primary coil of a pulse transformer. A DC/DC converter includes a switching element the ON/OFF operation of which is controlled according to a signal that originates at a secondary coil of the pulse transformer. The DC/DC converter stabilizes an input voltage Vdc, and supplies the input voltage Vdc thus stabilized to the anode of the LED string.

Abstract: Of the various technological features disclosed in the present specification, a structure according to the one technological feature is as follows. A lighting apparatus changeable between an illuminating state and a non-illuminating state comprising: a non-contact motion sensor arranged to sense a movement of a hand near the lighting apparatus; and a controller arranged to control the lighting apparatus in the non-illuminating state to change from the non-illuminating state to the illuminating state in response to the movement of hand sensed by the non-contact motion sensor, and to control the lighting apparatus in the illuminating state to cause a change in illumination with the illuminating state kept in response to the same movement of hand sensed by the non-contact motion sensor.

Abstract: Provided is a semiconductor device in which on-resistance is largely reduced. In a region (2a) of an N type epitaxial layer (2) of the semiconductor device 20, each region between neighboring trenches (3) is blocked with a depletion layer (14) formed around a trench (3) so that a current passage (12) is interrupted, while a part of the depletion layer (14) formed around the trench (3) is deleted so that the current passage (12) is opened. In a region (2b), a junction portion (8) between the N type epitaxial layer (2) and a P+ type diffusion region (7) makes a Zener diode (8).

Abstract: Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line.

Abstract: A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1): 3 ? ? 4 ? ? n + 0.30 × ( ? 4 ? ? n ) ? T ? 3 ? ? 4 ? ? n + 0.45 × ( ? 4 ? ? n ) ( 1 ) wherein ? is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.

Abstract: A semiconductor device capable of decreasing a reverse leakage current and a forward voltage is provided. In the semiconductor device, an anode electrode undergoes Schottky junction by being connected to a surface of an SiC epitaxial layer that has the surface, a back surface, and trapezoidal trenches formed on the side of the surface each having side walls and a bottom wall. Furthermore, an edge portion of the bottom wall of each of the trapezoidal trenches is formed to be in the shape bent towards the outside of the trapezoidal trench in the manner that a radius of curvature R satisfies 0.01 L<R<10 L (1) (in the expression (1), L represents the straight-line distance between the edge portions opposite to each other in a width direction of the trench).

Abstract: An organic device, including an organic compound having charge-transporting ability (i.e., transporting holes and/or electrons) and/or including organic light emissive molecules capable of emitting at least one of fluorescent light or phosphorescent light, has a charge transfer complex-contained layer including a charge transfer complex formed upon contact of an organic hole-transporting compound and molybdenum trioxide via a manner of lamination or mixing thereof, so that the organic hole-transporting compound is in a state of radical cation (i.e., positively charged species) in the charge transfer complex-contained layer.

Abstract: A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating film (9) including the followings formed sequentially from the silicon carbide substrate (1): a) a first oxide silicon film (O) (10), b) an SiN film (N) (11), and c) an SiN thermally-oxidized film (O) (12, 12a, 12b). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) (10) and in a vicinity of the silicon carbide substrate (1), and ii) in an interface between the silicon carbide substrate (1) and the first oxide silicon film (O) (10).

Abstract: Disclosed are a semiconductor device wherein warping of a semiconductor chip due to a sudden temperature change can be prevented without increasing the thickness, and a semiconductor device assembly. The semiconductor device comprises a semiconductor chip, a front side resin layer formed on the front surface of the semiconductor chip by using a first resin material, and a back side resin layer formed on the back surface of the semiconductor chip by using a second resin material having a higher thermal expansion coefficient than the first resin material. The back side resin layer is formed thinner than the front side resin layer.

Abstract: An automatic dishwashing detergent composition having at least two components. The first component is a polymer containing polymerized residues of at least one C3-C6 carboxylic acid monomer and a hydroxy end group. The second component is a biodegradable builder selected from among nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, glycine-N,N-diacetic acid, methylglycine-N,N-diacetic acid, 2-hydroxyethyliminodiacetic acid, glutamic acid-N,N-diacetic acid, 3-hydroxy-2,2?-iminodisuccinate, S,S-ethylenediaminedisuccinate aspartic acid-diacetic acid, N,N?-ethylenediamine disuccinic acid, iminodisuccinic acid, aspartic acid, aspartic acid-N,N-diacetate, beta-alaninediacetic acid, polyaspartic acid, salts thereof and combinations thereof.

Abstract: The invention relates to compositions for producing polymethacrylimide foams having reduced pore size. The inventive method allows production of a microporous foam with an especially homogeneous pore size distribution without having to use insoluble nucleation agents.

Abstract: Provided is a practical plug-in hybrid vehicle or an electric vehicle as well as a charge system, a fuel consumption measurement system, and an environment protection system for the vehicles. The charge system includes an electric power source charging a vehicle having a battery, a power supply unit for supplying electric power from the electric power source to the vehicle, and a power cable communication unit for performing power cable communication concerning the vehicle and the charging via the power supply unit. The vehicle includes a fuel tank for receiving oil from outside, a storage unit for storing oil supply information, a power source which consumes the fuel in the fuel tank and provides a travel power, a travel distance information acquisition unit, and a control unit which automatically calculates the fuel consumption according to the oil supply information in the storage unit and the travel distance information in the travel distance acquisition unit.