Patents Assigned to ROHM
  • Patent number: 8524809
    Abstract: This invention provides stable aqueous compositions including stable coating compositions, and methods of their production. The stable aqueous compositions and stable aqueous coating compositions comprise i) an aqueous dispersion of one or more emulsion-polymerized addition polymer comprising polymerized units of one or more carboxylester monomer, wherein at least one carboxylester monomer is a vinyl ester monomer; ii) one or more carboxylesterase enzyme; iii) one or more mono-alcohol with a formula molecular weight of less than 76; iv) optionally, acetaldehyde; and v) optionally, one or more organic carboxylester with a normal boiling point of less than 150° C.; and wherein the aqueous composition has a headspace volatile organic compound (VOC) content, as measured by headspace gas chromatography-mass spectrometry (GC-MS) at 33° C.
    Type: Grant
    Filed: December 10, 2010
    Date of Patent: September 3, 2013
    Assignee: Rohm and Haas Company
    Inventors: James Bohling, Paul F. Doll, David L. Frattarelli, Kathleen R. Manna, Alvin M. Maurice
  • Patent number: 8523395
    Abstract: A light emitting diode (LED) lamp includes a plurality of LED chips and a heat dissipation member configured to dissipate heat generated from the LED chips. The heat dissipation member includes a tubular unit having a constant cross-section perpendicular to an axial direction, and a plurality of fins, each of which extends outwardly from the tubular unit and extends in the axial direction, having a constant thickness in the axial direction.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: September 3, 2013
    Assignee: Rohm Co., Ltd.
    Inventors: Masaru Igaki, Takao Iemoto, Hirotaka Shimizu
  • Patent number: 8525882
    Abstract: A vehicle-mounted camera includes a camera module mounted on a vehicle such as an automobile, and further includes a mirror occupying at least a part of an imaging range of the camera module. The camera module may be arranged to face a forward vehicle traveling direction. The mirror may occupy a lower part of the vertical direction in the imaging range. The camera module and the mirror may both be disposed in the vehicle.
    Type: Grant
    Filed: June 15, 2010
    Date of Patent: September 3, 2013
    Assignee: Rohm Co., Ltd.
    Inventors: Hiroaki Onishi, Koji Hashimoto, Mikio Ichiura
  • Publication number: 20130221514
    Abstract: Provided is a double-sided cooling structure for a semiconductor device using a low processing temperature and reduced processing time utilizing solid phase diffusion bonding. The fabrication method for this system is provided. The semiconductor device 1 comprising: a mounting substrate 70; a semiconductor chip 10 disposed on the mounting substrate 70 and a semiconductor substrate 26, a source pad electrode SP and a gate pad electrode GP disposed on a surface of the semiconductor substrate 26, and a drain pad electrode 36 disposed on a back side surface of the semiconductor substrate 26 to be contacted with the mounting substrate 70; and a source connector SC disposed on the source pad electrode SP. The mounting substrate 70 and the drain pad electrode 36 are bonded by using solid phase diffusion bonding.
    Type: Application
    Filed: February 23, 2012
    Publication date: August 29, 2013
    Applicants: ROHM CO., LTD., ARKANSAS POWER ELECTRONICS INTERNATIONAL, INC.
    Inventors: Takukazu OTSUKA, Bryon WESTERN, Brandon PASSMORE, Zach COLE
  • Publication number: 20130221376
    Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.
    Type: Application
    Filed: April 12, 2013
    Publication date: August 29, 2013
    Applicant: ROHM CO., LTD.
    Inventor: ROHM CO., LTD.
  • Publication number: 20130221530
    Abstract: There is provided a semiconductor device with which stress can be prevented from locally concentrating on an external connecting terminal on a post and thus damages of the external connecting terminal can be prevented. The semiconductor device includes a semiconductor chip, a sealing resin layer stacked on a surface of the semiconductor chip, and the post which penetrates the sealing resin layer in a stacking direction of the semiconductor chip and the sealing resin layer, protrudes from the sealing resin layer, and has a periphery of the protruding portion opposedly in contact with a surface of the sealing resin layer in the stacking direction.
    Type: Application
    Filed: March 28, 2013
    Publication date: August 29, 2013
    Applicant: ROHM CO., LTD.
    Inventor: ROHM CO., LTD.
  • Patent number: 8520270
    Abstract: An elongate light guide includes a light incident portion provided at an end in the longitudinal direction of the guide, a light reflecting portion extending in the longitudinal direction, a light emitting portion extending in the longitudinal direction for emitting linear light, and a scatterer for scattering the light entering through the light incident portion. For instance, the scatterer is provided as a grained portion formed at least part of the reflecting portion.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: August 27, 2013
    Assignee: Rohm Co., Ltd.
    Inventors: Hideki Sawada, Yasuhiro Nagao
  • Patent number: 8521239
    Abstract: A mobile telephone includes a cartilage conduction unit for making contact with the ear cartilage. The cartilage conduction unit is provided to at least one of two corner parts at an upper side of the mobile telephone. The mobile telephone can include a surface of an outer wall and a cartilage conduction vibration source arranged inward from the surface of the outer wall, the vibration of the cartilage conduction vibration source being transmitted to the surface of the outer wall, wherein when the surface of the outer wall is brought into contact with at least a part of the ear cartilage around the entrance part to the external auditory meatus without making contact with the auricular helix, the sound pressure inside the external auditory meatus at about 1 cm from the entrance part of the external auditory meatus has an at least 10 dB increase compared to the non-contact state.
    Type: Grant
    Filed: June 6, 2012
    Date of Patent: August 27, 2013
    Assignees: Rohm Co., Ltd.
    Inventors: Hiroshi Hosoi, Yoji Hosoi, Masashi Morimoto, Masahide Tanaka
  • Patent number: 8519680
    Abstract: A load driving device disclosed in the specification includes a power supply circuit for supplying to a load an output voltage converted from an input voltage, a detection voltage generation circuit for generating a detection voltage which varies depending on a magnitude of a voltage drop which across the load, and a control circuit for controlling the power supply circuit so that it performs output feedback control of the output voltage, on the basis of the detection voltage.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: August 27, 2013
    Assignee: Rohm Co., Ltd.
    Inventor: Sadakazu Murakami
  • Patent number: 8519782
    Abstract: A current source generates a reference current. A first transistor is a depletion-type MOSFET arranged such that one terminal thereof is connected to the current source and its gate is connected to its source. A second transistor is an enhancement-type MOSFET arranged such that one terminal thereof is connected to the other terminal of the first transistor, the other terminal thereof is connected to a fixed voltage terminal, and its gate and drain are connected. A third MOSFET is an enhancement-type P-channel MOSFET arranged such that one terminal thereof is connected to the current source, the other terminal thereof is connected to the fixed voltage terminal, and its gate is connected to a connection node connecting the first and second transistors. A constant voltage circuit outputs at least a voltage that corresponds to the gate voltage of the third transistor or a voltage that corresponds to the gate voltage thereof.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: August 27, 2013
    Assignee: Rohm Co., Ltd.
    Inventor: Manabu Oyama
  • Patent number: 8520346
    Abstract: An abnormality detection circuit monitors the sink current Irnf of a H-bridge circuit and determines the presence of an abnormal state if the sink current is not detected for a predetermined time. The abnormality detection circuit includes a clock pulse generator, a counter and a NMOS transistor. The abnormality detection circuit includes a clock pulse generator arranged to generate a clock pulse of a predetermined frequency, and a counter arranged so that a count value is incremented every time the clock pulse is provided to the counter and arranged so that the count value is reset when the sink current is detected. The counter generates a first abnormality detection signal that changes from a normal logic level to an abnormal logic level when the count value reaches a predetermined value without being reset.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: August 27, 2013
    Assignee: Rohm Co., Ltd.
    Inventor: Motohiro Ando
  • Patent number: 8518230
    Abstract: A method of reducing tin whisker formation including steps of a) providing a tin or tin-alloy bath containing one or more sources of tin and one or more crystal plane orientation enhancing compounds selected from imides, imines, amides, polyamides, amines, polyamines, polyols, dibutyl thiourea, allyl thiourea, amino thiazole, rhodanine, sulfosalicylic acid and sulfamides; and b) electrodepositing a layer of tin or tin-alloy on a substrate, the tin or tin-alloy layer is free of crystal planes or equivalent planes thereof forming an angle of 5° to 22° with an adjacent crystal plane or an equivalent plane.
    Type: Grant
    Filed: July 13, 2005
    Date of Patent: August 27, 2013
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventor: André Egli
  • Publication number: 20130215728
    Abstract: A rotation control apparatus includes: a controller configured to supply test currents to a plurality of different paths of a motor when the motor is stopped; and a stop position detector configured to detect a rotational position of the motor based on an order of current values of the test currents. The controller causes one of the test currents to flow through one of the plurality of different paths, measure time taken until the corresponding detection voltage reaches a reference voltage, and set electrical conduction time of the test currents based on a result of the measurement.
    Type: Application
    Filed: February 22, 2013
    Publication date: August 22, 2013
    Applicant: ROHM CO., LTD.
    Inventor: ROHM CO., LTD.
  • Publication number: 20130215200
    Abstract: According to the present disclosure, a manufacturing method of a fine wiring pattern is disclosed. The manufacturing method includes preparing a support member, forming a first layer on the support member by thick-film printing, and forming a second layer including Ag on the first layer by the thick-film printing. The method also includes forming a predetermined fine wiring pattern by performing an etching process upon the first layer and the second layer.
    Type: Application
    Filed: January 23, 2013
    Publication date: August 22, 2013
    Applicant: ROHM CO., LTD.
    Inventor: ROHM CO., LTD.
  • Publication number: 20130214351
    Abstract: A method of manufacturing a semiconductor device having a VDMOSFET (Vertical Double-diffused Metal Oxide Semiconductor Field-Effect Transistor) and a planar gate MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), including forming a semiconductor layer of a first conductivity type by epitaxy, forming a body region recess for forming a body region of the VDMOSFET on the semiconductor layer, and embedding a semiconductor material of a second conductivity type in the body region recess by epitaxy or CVD (Chemical Vapor Deposition).
    Type: Application
    Filed: March 18, 2013
    Publication date: August 22, 2013
    Applicant: ROHM CO., LTD.
    Inventor: ROHM CO., LTD.
  • Publication number: 20130217230
    Abstract: A method for chemical mechanical polishing of a semiconductor wafer containing a nonferrous metal is provided, comprising: providing a chemical mechanical polishing composition comprising 1 to 25 wt % of an oxidizer; 0.01 to 15 wt % of an inhibitor for the nonferrous metal; 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether(meth)acrylate and 1-vinylimidazole; and water; wherein the chemical mechanical polishing composition has an acidic pH; providing a chemical mechanical polishing pad; providing a semiconductor wafer containing the nonferrous metal; creating dynamic contact between the chemical mechanical polishing pad and the semiconductor wafer; and, dispensing the polishing solution at or near the interface between the chemical mechanical polishing pad and the semiconductor wafer.
    Type: Application
    Filed: April 1, 2013
    Publication date: August 22, 2013
    Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Rohm and Haas Electronic Materials CMP Holdings, Inc.
  • Publication number: 20130216718
    Abstract: Catalysts include nanoparticles of catalytic metal and cellulose or cellulose derivatives. The catalysts are used in electroless metal plating. The catalysts are free of tin.
    Type: Application
    Filed: August 17, 2012
    Publication date: August 22, 2013
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Feng LIU, Maria Anna RZEZNIK
  • Publication number: 20130214343
    Abstract: A semiconductor device includes a gate insulating film formed on the semiconductor substrate; a floating gate formed on the gate insulating film; a control gate formed on the floating gate and has a side coplanar with a side of the floating gate; a tunnel diffusion layer facing a portion of the floating gate; and a tunnel window formed in a portion of the gate insulating film between the floating gate and the tunnel diffusion layer, the tunnel window being formed to be thinner than a remaining peripheral portion of the gate insulating film.
    Type: Application
    Filed: February 15, 2013
    Publication date: August 22, 2013
    Applicant: ROHM CO., LTD.
    Inventor: ROHM CO., LTD.
  • Publication number: 20130213475
    Abstract: There is provided a dye-sensitized photovoltaic device, which can achieve low-resistivity of an optical transparent electrode film composing first and second electrodes and can improve photovoltaic power generation characteristics, includes: a first substrate; a first electrode disposed on the first substrate; a catalyst layer formed on the first electrode and having a catalytic activity for a redox electrolyte; an electrolysis solution contacted with the catalyst layer and dissolving a redox electrolyte in a solvent; a porous semiconductor layer contacted with the electrolysis solution and including semiconductor fine particles and dye molecules; a second electrode disposed on the porous semiconductor layer; a second substrate disposed on the second electrode; and a sealant disposed between the first and second substrates, and sealing the electrolysis solution. The first and second electrodes are composed of an annealed layer of an ITO fine particles contained film coated on the first and second substrates.
    Type: Application
    Filed: February 20, 2013
    Publication date: August 22, 2013
    Applicant: ROHM CO., LTD.
    Inventor: Rohm Co., Ltd.
  • Publication number: 20130219416
    Abstract: A load drive device (100) includes: a first terminal (LDOF) and a second terminal (LDOR) to which a load is connected; and a driver (103) which controls the terminal voltages of the first terminal (LDOF) and the second terminal (LDOR) according to an input signal (LDIN), where the driver (103) switches, based on an operation mode switching signal (MODE), between a first operation mode for driving the load by passing an output current between the first terminal (LDOF) and the second terminal (LDOR) and a second operation mode for driving the load by passing the output current both from the first terminal (LDOF) and from the second terminal (LDOR).
    Type: Application
    Filed: October 28, 2011
    Publication date: August 22, 2013
    Applicant: ROHM CO., LTD.
    Inventor: Takashi Yoshiya