Abstract: A composition comprising polymeric particles having an average particle diameter from 0.5 to 30 ?m and Vicker's scale hardness from 100 to 700 Kgf/mm2. The composition also contains a film-forming polymer having Tg no greater than 80° C. The average refractive index difference measured from 400 nm to 1100 nm between the polymeric particles and the film-forming polymer is no greater than 0.04.

Abstract: The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.

Abstract: The invention is characterized in including interconnect layer formed on surface of a substrate forming desired element region, inter layer dielectric covering surface of said interconnect layer, silicon nitride film formed so as covering whole surface of said inter layer dielectric, metal interconnect layer consisting of gold layer as the uppermost lay metal formed on the upper layer of said silicon nitride film, and planarized dielectric formed on said metal interconnect layer.

Abstract: A method for preparing a Group 1a-1b-3a-6a material using a selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component having a formula selected from RZ—Z?R? and R2—SH, a Group 1b component and a liquid carrier; wherein Z and Z? are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; wherein R? and R2 are selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; and wherein the selenium/Group 1b ink is a stable dispersion.

Abstract: A method for chemical mechanical polishing of a semiconductor wafer containing a nonferrous metal is provided, comprising: providing a chemical mechanical polishing composition comprising 1 to 25 wt % of an oxidizer; 0.01 to 15 wt % of an inhibitor for the nonferrous metal; 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether(meth)acrylate and 1-vinylimidazole; and water; wherein the chemical mechanical polishing composition has an acidic pH; providing a chemical mechanical polishing pad; providing a semiconductor wafer containing the nonferrous metal; creating dynamic contact between the chemical mechanical polishing pad and the semiconductor wafer; and, dispensing the polishing solution at or near the interface between the chemical mechanical polishing pad and the semiconductor wafer.

Abstract: A switching power supply device includes: a positive voltage output circuit connected to a direct-current power supply, the positive voltage output circuit including a first switching element, a voltage boosting inductor, a first rectifying element and a first capacitor; a negative voltage output circuit connected to the power supply, the negative voltage output circuit including a second switching element, a voltage dropping inductor, a second rectifying element and a second capacitor; and an adder circuit configured to add switching currents flowing when the first and the second switching elements are operated. The circuit elements of the positive voltage output circuit are symmetrical with those of the negative voltage output circuit. The first switching current of the positive voltage output circuit and the second switching current of the negative voltage output circuit are generated in mutually opposite directions and are inputted to the adder circuit.

Abstract: An apparatus includes a manifold with a chamber for mixing multiple reactants. Gases are jetted into the manifold by a plurality of inlet injectors. The inlet injectors are arranged such that the gases passing into the manifold impinge on each other at a common point to form a mixture. The mixture passes through a plurality of holes in one side of the manifold into a deposition chamber where the mixture of gases impinges on additional gases at a common point to provide a reaction resulting in deposition of solid materials in the deposition chamber. The solid materials are free-standing.

Abstract: A main processor of mobile phone changes from power saving state to active state for changing display in response to a sub processor for sensors, the main processor returning to the power saving state after changing the display. The main processor changes from power saving state to active state for storing information from the sub processor, the main processor returning to the power saving state after the storing function. The main processor selects the stored display data on the basis of the information from the sub processor to change display. The main processor receives and stores information from the sub processor in the boot up process or before finishing the operation. The sub processor is in the active state so as to control the sensor even in a case where the main processor is in the power saving state.

Abstract: A manufacturing method of laser diode unit of the present invention includes steps: placing a laser diode on top of a solder member formed on a mounting surface of a submount, applying a pressing load to the laser diode and pressing the laser diode against the solder member, next, melting the solder member by heating the solder member at a temperature higher than a melting point of the solder member while the pressing load is being applied, and thereafter, bonding the laser diode to the submount by cooling and solidifying the solder member, thereafter, removing the pressing load, and softening the solidified solder member by heating the solder member at a temperature lower than the melting point of the solder member after the pressing load has been removed, and thereafter cooling and re-solidifying the solder member.

Abstract: The present invention is directed to a new more environmentally friendly method for the recovery of uranium from pregnant liquor solutions that comprise high concentration of sulfate by using an amino phosphonic functionalized resin.

Abstract: Disclosed herein is a device comprising an evaporator; and a heat exchanger; the heat exchanger being in fluid communication with evaporator; evaporator comprising an outer casing; and an inner casing that is disposed within the outer casing; the inner casing contacting a plate; wherein the inner casing encloses a first conduit that is operative to introduce a carrier fluid into evaporator; and a second conduit that is operative to remove carrier fluid entrained with a precursor; wherein the outer casing is detachably attached to the plate; the plate contacting a first precursor conduit that is operative to introduce the precursor into evaporator from the heat exchanger; where the heat exchanger is disposed proximate to evaporator at a distance effective to maintain the precursor in evaporator at a substantially constant temperature when the ambient temperature around the heat exchanger and evaporator fluctuates by an amount of up to about ±35° C.

Abstract: An output monitoring comparator outputs an ON signal when an output voltage becomes lower than a reference voltage. A pulse modulator generates a pulse signal at a predetermined level, an ON time-period from when the ON signal is outputted. A driver circuit alternately turns ON, after a dead time, a switching transistor and a synchronous rectification transistor, based on the pulse signal. A light load mode detector compares a switching voltage at a connection point of the switching transistor and the synchronous rectification transistor, and ground potential, and at timing at which the ON signal is outputted from the output monitoring comparator, when the switching voltage is higher than the ground potential, nullifies the ON signal.

Abstract: An organic electroluminescent device includes an anode electrode layer; a cathode electrode layer opposed to the anode electrode layer; a hole injection layer provided adjacent to the anode electrode layer an organic structure including at least one light-emissive layer or at least one light-emissive unit having at least one light-emissive layer; between the anode electrode layer and the cathode electrode layer. At least one of the anode electrode layer and the cathode electrode layer is transparent. The hole injection layer includes a mixed layer of a metal oxide and an organic compound. The mixed layer is formed upon co-deposition of the metal oxide and the organic compound.

Abstract: Provided is a lighting device having high luminance in-plane uniformity without a dark part occurring at a connecting part between surface light source panels. The lighting device (1) is provided with a plurality of surface light source panel (2), and a plurality of light diffusion passive reflectors (3) disposed at the light-emitting side of the surface light source panel (2). In the light diffusion passive reflector (3), a rectangular-shaped bottom surface is disposed on a light emitting region of the surface light source panel (2), and a light-emitting surface (3a) has substantially the same size as a planar outline of the surface light source panel (2), and a side surface (3c) is formed to incline diagonally outward towards the light-emitting surface (3a) from the bottom surface. The light diffusion passive reflectors (3) which are mutually adjoining are disposed to contact with each other without a gap in between, and are disposed so that the light-emitting surface (3a) is continuously arranged.

Abstract: A driving device comprises a first transistor (B13), a second transistor (B14), and a resistance element. The first transistor (B13) has one terminal receiving a pulsed current and a control terminal connected to the one terminal. The second transistor (B14) has one terminal connected to at least one load, the other terminal connected to a reference potential together with the other terminal of the first transistor (B13), and a control terminal connected to the control terminal of the first transistor (B13). The resistance element is connected between the control terminal of the first transistor (B13) and the other terminal of the first transistor (B13).

Abstract: A signal transmission circuit is provided, which includes a level shifting circuit performing level shifting on an input signal and then outputting the input signal, but which can inhibit the output of an erroneous signal caused by the voltage change of the power source. The level shifting circuit, for individually performing level shifting on a first input signal and a second input signal, and outputting the first input signal and the second input signal as a first shifted signal and a second shifted signal respectively, comprises a first series circuit having a switching element switched according to the first input signal and a resistor, a second series circuit having a switching element switched according to the second input signal and a resistor, and a counter-current preventing portion for preventing a reverse current from flowing from the ground terminal toward the first series circuit and the second series circuit.

Abstract: A microchip including a fluid circuit therein and a specimen inlet for introducing a specimen containing a first component and a second component different in specific gravity from each other into the fluid circuit is provided, in which the fluid circuit includes a specimen measurement unit connected to the specimen inlet and having a prescribed volume for measuring the specimen introduced through the specimen inlet and a separation unit which is a site connected to the specimen measurement unit and having a capacity capable of storing the total amount of the measured specimen, for storing the total amount of the measured specimen and separating the first component and the second component in the stored specimen from each other.

Abstract: Metal electroplating processes are used in pH sensitive applications to plate metal layers on semiconductors. The semiconductors may be used in the manufacture of photovoltaic devices and solar cells.

Abstract: An ink jet print head includes a substrate in which a pressure chamber is formed, a vibration film configured to define the pressure chamber and deformed to change a volume of the pressure chamber, a lower electrode formed on the vibration film, a piezoelectric film formed on the lower electrode, and an upper electrode formed on the piezoelectric film and having a periphery receding inwardly relative to a periphery of the piezoelectric film.

Abstract: A method of making a heterogeneous catalyst, the catalyst produced therefrom, and the use of the catalyst, comprising mixing a dried ion exchange resin with a solution of a ketone and a metal, swelling the ion exchange resin, distributing the metal in the resin, and transforming without reducing agents the metal to zero valent at a temperature below 120° C.