Patents Assigned to Rovec Acquisitions Ltd., LLC
  • Laterally diffused MOS transistor having N+ source contact to N-doped substrate
    Patent number: RE42403
    Abstract: Reduced source resistance is realized in a laterally diffused MOS transistor by fabricating the transistor in a P-doped epitaxial layer on an N-doped semiconductor substrate and using a trench contact for ohmically connecting the N-doped source region to the N-doped substrate.
    Type: Grant
    Filed: June 13, 2008
    Date of Patent: May 31, 2011
    Assignee: Rovec Acquisitions Ltd., LLC
    Inventors: Jeff Babcock, Johan Agus Darmawan, John Mason