Abstract: A photovoltaic module and its manufacturing method. The module includes a first support wafer made of sintered silicon and a second layer of single-crystal silicon.

Abstract: The present invention relates to a method for forming a crystallized silicon layer made up of grains having an average size of no less than 20 ?m, including at least the steps that comprise: (1) providing a layer of silicon to be (re)crystallized, the average grain size of which is less than 10 ?m; (2) placing said layer of silicon to be (re)crystallized in contact with a liquid composition at least partially made up of a metal solvent; and (3) exposing the assembly to a thermal treatment suitable for (re)crystallizing said layer of silicon with the expected grain size, characterized in that said thermal treatment includes heating the assembly made up of the layer of silicon in contact with said liquid composition to a temperature that is lower than 1410° C. and at least equal to the eutectic temperature in the solvent-silicon phase diagram.

Abstract: The instant disclosure relates to a device and method for recrystallising a silicon wafer or a wafer comprising at least one silicon layer. The silicon wafer or the at least one silicon layer of the wafer is totally molten.

Abstract: An electronic structure includes a first area having silicon grains having a size smaller than 100 micrometers and a second area superposed to the first area and having silicon grains having a size greater than or equal to 100 micrometers. The first and second areas form a support. At least one layer of an epitaxial semiconductor material is disposed on the second area.

Abstract: The instant disclosure relates to a device and method for recrystallising a silicon wafer or a wafer comprising at least one silicon layer. The silicon wafer or the at least one silicon layer of the wafer is totally molten.

Abstract: A method of forming a material from a source material including the following steps of grinding the source material to get powders if the source material is not already in the form of powders; sintering the powders with at least one compression step and one thermal processing step; and purifying the material with a gas flow, the gas flow passing through the porosity channels of the material.

Abstract: A photovoltaic module and its manufacturing method. The module includes a sintered silicon support including several integrated photovoltaic cells.

Abstract: An electronic structure includes a first area having silicon grains having a size smaller than 100 micrometers and a second area superposed to the first area and having silicon grains having a size greater than or equal to 100 micrometers. The first and second areas form a support. At least one layer of an epitaxial semiconductor material is disposed on the second area.

Abstract: A method of forming a material from a source material including the following steps of grinding the source material to get powders if the source material is not already in the form of powders; sintering the powders with at least one compression step and one thermal processing step; and purifying the material with a gas flow, the gas flow passing through the porosity channels of the material.

Abstract: A method of manufacturing a semiconductor material in the form of bricks or granules, includes a step of sintering powders of at least one material selected from the group consisting of silicon, germanium, gallium arsenide, and the alloys thereof so as to form said granules. The sintering step includes the steps of compacting and thermal processing the powders, and a step of purifying the semiconductor material using a flow of a gas. The gas flow passes through the porosity channels of the material.