Patents Assigned to Samsung Electonics Co., Ltd.
  • Publication number: 20080072218
    Abstract: Disclosed is an apparatus and method for upgrading software in a portable terminal. The method includes determining if additional installation files for the software upgrade are downloaded, storing the additional installation file in an additional installation region of a memory without discrimination between software modules, and storing the matching information of the additional installation files and the software modules.
    Type: Application
    Filed: September 19, 2007
    Publication date: March 20, 2008
    Applicant: SAMSUNG ELECTONICS CO., LTD.
    Inventor: Hye-Jung KWON
  • Publication number: 20080046719
    Abstract: An access point and a method supporting multiple authentication policies for a WLAN are disclosed. The access point according to the present invention includes an authentication policy detector for detecting an authentication policy of a terminal from a signal transmitted by the terminal, a plurality of authentication modules for performing the authentication procedures corresponding to different authentication policies, and an authentication processor for performing an appropriate authentication procedure by selecting the corresponding authentication module according to the authentication policy detected by the authentication policy detector. The access point and method for supporting multiple authentication policies according to the present invention avoid duplication of network elements for authentication by providing an authentication service for terminals using different authentication policies with a single access point.
    Type: Application
    Filed: March 16, 2007
    Publication date: February 21, 2008
    Applicant: SAMSUNG ELECTONICS CO., LTD.
    Inventors: Sung Jun Kim, Myeon Kee Youn, Seong Kyu Song
  • Publication number: 20070117517
    Abstract: Dynamic frequency selection based on CR is provided. A CR BS detects an interference-free and unused frequency band. When sensing a new BS that has great signal strength and requires the frequency band during communications in the frequency band, the CR BS releases the frequency band and dynamically selects another frequency band to avoid interference.
    Type: Application
    Filed: November 6, 2006
    Publication date: May 24, 2007
    Applicants: SAMSUNG ELECTONICS CO., LTD., Inha-Industry Partnership Institute
    Inventors: Junhong Hui, Duck-Dong Hwang, Jae-Myeong Kim, Sang-Jo Yoo, Kyoung-Jin Cho, Jae-Hak Chung
  • Patent number: 7214993
    Abstract: Provided is a non-planar transistor with a multi-gate structure that includes a germanium channel region, and a method of manufacturing the same. The non-planar transistor includes a silicon body and a channel region that covers exposed surfaces of the silicon body. The channel region is formed of a germanium layer and includes a first channel region and a second channel region. In order to form the germanium channel region, a mesa type active region is formed on the substrate, and a germanium layer is formed to cover two sidewalls and an upper surface of the active region.
    Type: Grant
    Filed: November 23, 2004
    Date of Patent: May 8, 2007
    Assignee: Samsung Electonics Co., Ltd.
    Inventor: Jeong-hwan Yang
  • Patent number: 7215026
    Abstract: In one embodiment, a semiconductor module includes at least one semiconductor chip package, a board having functional pads and dummy pads, and at least one solder joint electrically connecting the semiconductor chip package and one of the functional pads of the board. Furthermore, at least one supporting solder bump is formed on one of the dummy pads and disposed under a portion of the semiconductor chip package. For example, the supporting solder bump may be disposed under a peripheral area of the semiconductor chip package.
    Type: Grant
    Filed: October 11, 2005
    Date of Patent: May 8, 2007
    Assignee: Samsung Electonics Co., Ltd
    Inventors: Chang-Yong Park, Byung-Man Kim, Dong-Chun Lee, Yong-Hyun Kim, Kwang-Seop Kim, Dong-Woo Shin, Kwang-Ho Chun
  • Publication number: 20060126372
    Abstract: A drive circuit of a FRAM (Ferroelectric Random Access Memory) includes an address buffer circuit that buffers an applied external address signal and generates an internal address signal, and detects a transition of the internal address signal and generates address transition detection signals for respective internal address signals. The FRAM includes a composite pulse signal generating circuit which limits a subsequent generation of a composite pulse signal for a delay interval provided after a generation of a previous composite pulse signal, in generating the second composite pulse signal obtained by totaling the respective address transition detection signals. The FRAM includes an internal chip enable buffer circuit which generates an internal chip enable signal to generate an internal control signal, in response to the composite pulse signal.
    Type: Application
    Filed: December 13, 2005
    Publication date: June 15, 2006
    Applicant: Samsung Electonics Co., LTD.
    Inventors: Kang-Woon Lee, Byung-Jun Min, Han-Joo Lee, Byung-Gil Jeon
  • Patent number: 6989664
    Abstract: An RF power sensor for measuring power for an RF signal using capacitance includes a substrate preferably formed of a semiconductor, such as silicon or of a dielectric substance, a fixture part fixed to the substrate and forming a signal line and ground lines that transmit RF signals, and a bridge connected to the ground lines and floating over the signal line, wherein the bridge is driven by an external driving force, and the external driving force induces capacitance between the bridge and the signal line. Accordingly, power for an RF signal can be measured through the capacitance between the signal line and the bridge. The RF power sensor facilitates matchings, reduces insertion loss, and can be used in a wide bandwidth because it is based on transmission lines having characteristic impedance. Further, high power can be measured depending upon bridge designs.
    Type: Grant
    Filed: April 8, 2003
    Date of Patent: January 24, 2006
    Assignee: Samsung Electonics Co., Ltd.
    Inventors: Dong-ha Shim, In-sang Song, Young-il Kim, Sun-hee Park, Young-tack Hong, Dong-ki Min
  • Publication number: 20040228253
    Abstract: A recording and/or reproducing apparatus for use with an information storage medium that includes a lead-in area, a user data area, and a lead-out area is read by a recording and/or reproducing apparatus. Information about whether the information storage medium is compatible with a drive following an older version of standards is recorded in at least one of the lead-in and lead-out areas. Accordingly, the recording performance thereof is improved, and a drive following an older version of standards can record data on or reproduce data from a newer version of an information storage medium.
    Type: Application
    Filed: February 12, 2004
    Publication date: November 18, 2004
    Applicant: Samsung Electonics, Co., Ltd.
    Inventor: Kyung-geun Lee
  • Publication number: 20040155266
    Abstract: A silicidation blocking layer (SBL) pattern is formed on a substrate including an active region and a field region. The SBL pattern covers the field region and exposes the active region. A silicide layer is formed on the active region by reacting metal with silicon existing in the active region. An insulation layer is formed on the substrate including the silicide layer. An opening exposing the silicide layer is formed by selectively etching the insulation layer under a condition having an etching selectivity between the SBL and the insulation layer. Conductive material is filled up the opening. The field region of a substrate is sufficiently protected by the SBL pattern without any additional process so that the failure of a semiconductor device is effectively prevented because the flow of a leakage current through the field region is blocked.
    Type: Application
    Filed: February 2, 2004
    Publication date: August 12, 2004
    Applicant: Samsung Electonics Co., Ltd.
    Inventor: Hyeon-Cheol Kim
  • Publication number: 20020127004
    Abstract: A recording medium and a recording apparatus store manufacturer information to support specific functions for each manufacturer and a method therefore. A reproducing apparatus reproduces the manufacturer information to support specific functions. When the recording apparatus modifies the contents of the recording medium, the manufacturer's identification code is recorded. The recording apparatus and the reproducing apparatus checks the identification code on the recording medium before using its own manufacture information item for some specific function. Also, a time required to determine whether the manufacturer information items are effective is reduced.
    Type: Application
    Filed: May 14, 2002
    Publication date: September 12, 2002
    Applicant: Samsung Electonics Co., Ltd.
    Inventors: Seong-jin Moon, Young-nam Oh, Tae-yun Chung, Jung-suk Kang, Pan-gie Park
  • Patent number: 6348680
    Abstract: A food amount detector for automatically detecting the amount of a food placed in a cooking chamber of a microwave oven, a microwave oven employing the food amount detector, and control method thereof. Output voltage of a microwave generator is detected while the microwave oven is driven, and the amount of the food placed in the cooking chamber of the microwave oven is determined based on the output voltage such detected. In accordance with the amount of the food such determined, the food is cooked under the appropriate driving conditions of the microwave oven. Accordingly, the user does not need to determine the amount of the food by himself, or set the driving conditions of the microwave oven such as cooking time, level of microwave energy, etc. As a result, the user finds it convenient when using this microwave oven, and the food is cooked under the exact driving conditions set by the microwave oven.
    Type: Grant
    Filed: March 29, 2001
    Date of Patent: February 19, 2002
    Assignee: Samsung Electonics Co., Ltd.
    Inventors: Chul Kim, Tae-soo Park, Kwang-seok Kang, Won-woo Lee
  • Publication number: 20020012326
    Abstract: There is provided a method of transmitting power control information to a BSC (Base Station Controller) in a BTS (Base station Transceiver System) of a mobile communication system. The BTS receives forward power control (FPC) mode information indicating a low power control from the BSC and transmits the FPC mode information to an MS (Mobile Station). Then, the BTS extracts a QIB (Quality Indicator Bit) that is a power control command in a frame period from a reverse pilot channel received from the MS according to the FPC mode information and determines the status of the QIB. The BTS transmits information requesting the BSC to change a threshold for a power control on a forward DCCH (Dedicated Control Channel) based on the determined QIB status to the BSC.
    Type: Application
    Filed: April 26, 2001
    Publication date: January 31, 2002
    Applicant: SAMSUNG ELECTONICS CO. LTD
    Inventor: Yong Chang
  • Publication number: 20020009013
    Abstract: The present invention discloses an interface circuit suitable for a high-speed semiconductor device.
    Type: Application
    Filed: November 30, 2000
    Publication date: January 24, 2002
    Applicant: Samsung Electonics Co., Ltd.
    Inventor: Young-Dae Lee
  • Patent number: 5921773
    Abstract: An improved wafer boat for a vertical furnace has inner upper and lower corners formed as sloped surfaces, and has outer upper and lower corners formed as sloped surfaces. This prevents the formation and collection of particles off of the wafer boat that can generate a protrusion on the wafer boat. By preventing the formation of a protrusion, this improved wafer boat prevents damage to the wafers processed in the wafer boat and improves the reliability of semiconductor devices formed from those wafers. Also, holes are provided for locking pins on both the upper and lower plates of the wafer boat. This means that the wafer boat can be loaded into the furnace in both a rightside-up and upside-down orientation, thus increasing the lifespan of the boat and reducing boat maintenance costs.
    Type: Grant
    Filed: February 21, 1997
    Date of Patent: July 13, 1999
    Assignee: Samsung Electonics Co., Ltd.
    Inventor: Yong-woon Lee